CN1140917C - 制作包含与硅的金属氧化物界面的半导体结构的方法 - Google Patents

制作包含与硅的金属氧化物界面的半导体结构的方法 Download PDF

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Publication number
CN1140917C
CN1140917C CNB001202545A CN00120254A CN1140917C CN 1140917 C CN1140917 C CN 1140917C CN B001202545 A CNB001202545 A CN B001202545A CN 00120254 A CN00120254 A CN 00120254A CN 1140917 C CN1140917 C CN 1140917C
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China
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seed layer
forming
semiconductor structure
fabricating
silicon
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Expired - Fee Related
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CNB001202545A
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Chinese (zh)
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CN1281245A (zh
Inventor
贾马·兰达尼
3
拉万德兰那斯·德鲁帕德
于致忆
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NXP USA Inc
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Motorola Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/693—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing hafnium, e.g. HfSiOx or HfSiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/6934—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing zirconium, e.g. ZrSiOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2

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  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
CNB001202545A 1999-07-15 2000-07-14 制作包含与硅的金属氧化物界面的半导体结构的方法 Expired - Fee Related CN1140917C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/354,522 1999-07-15
US09/354,522 US6319730B1 (en) 1999-07-15 1999-07-15 Method of fabricating a semiconductor structure including a metal oxide interface

Publications (2)

Publication Number Publication Date
CN1281245A CN1281245A (zh) 2001-01-24
CN1140917C true CN1140917C (zh) 2004-03-03

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Country Status (8)

Country Link
US (1) US6319730B1 (fr)
EP (1) EP1069605B1 (fr)
JP (1) JP2001068467A (fr)
KR (1) KR100633754B1 (fr)
CN (1) CN1140917C (fr)
DE (1) DE60026909T2 (fr)
SG (1) SG85710A1 (fr)
TW (1) TW468211B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100633754B1 (ko) 1999-07-15 2006-10-16 프리스케일 세미컨덕터, 인크. 실리콘과의 금속 산화물 경계면을 포함하는 반도체 구조를제작하는 방법

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2785897B1 (fr) * 1998-11-16 2000-12-08 Commissariat Energie Atomique Couche mince d'oxyde d'hafnium et procede de depot
JP2001077108A (ja) * 1999-08-31 2001-03-23 Nec Corp 半導体装置及び複合酸化物薄膜の製造方法
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6693033B2 (en) * 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
JP2001257344A (ja) * 2000-03-10 2001-09-21 Toshiba Corp 半導体装置及び半導体装置の製造方法
KR20030011083A (ko) 2000-05-31 2003-02-06 모토로라 인코포레이티드 반도체 디바이스 및 이를 제조하기 위한 방법
EP1301941A2 (fr) * 2000-07-20 2003-04-16 North Carolina State University Silicates metalliques a constante dielectrique elevee formes par reactions metal-surface maitrisees
WO2002009187A2 (fr) 2000-07-24 2002-01-31 Motorola, Inc. Diodes a heterojonction tunnel et processus de fabrication de celles-ci
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
WO2002082551A1 (fr) 2001-04-02 2002-10-17 Motorola, Inc. Structure de semi-conducteur a courant de fuite attenue
US6709989B2 (en) * 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US6562491B1 (en) 2001-10-15 2003-05-13 Advanced Micro Devices, Inc. Preparation of composite high-K dielectrics
US6559014B1 (en) 2001-10-15 2003-05-06 Advanced Micro Devices, Inc. Preparation of composite high-K / standard-K dielectrics for semiconductor devices
US20030071327A1 (en) * 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6790755B2 (en) * 2001-12-27 2004-09-14 Advanced Micro Devices, Inc. Preparation of stack high-K gate dielectrics with nitrided layer
US6645882B1 (en) 2002-01-17 2003-11-11 Advanced Micro Devices, Inc. Preparation of composite high-K/standard-K dielectrics for semiconductor devices
US6586349B1 (en) 2002-02-21 2003-07-01 Advanced Micro Devices, Inc. Integrated process for fabrication of graded composite dielectric material layers for semiconductor devices
US6806095B2 (en) 2002-03-06 2004-10-19 Padmapani C. Nallan Method of plasma etching of high-K dielectric materials with high selectivity to underlying layers
US20060252265A1 (en) * 2002-03-06 2006-11-09 Guangxiang Jin Etching high-kappa dielectric materials with good high-kappa foot control and silicon recess control
US6703277B1 (en) * 2002-04-08 2004-03-09 Advanced Micro Devices, Inc. Reducing agent for high-K gate dielectric parasitic interfacial layer
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7094704B2 (en) * 2002-05-09 2006-08-22 Applied Materials, Inc. Method of plasma etching of high-K dielectric materials
US6902681B2 (en) * 2002-06-26 2005-06-07 Applied Materials Inc Method for plasma etching of high-K dielectric materials
US20040007561A1 (en) * 2002-07-12 2004-01-15 Applied Materials, Inc. Method for plasma etching of high-K dielectric materials
US6855643B2 (en) * 2002-07-12 2005-02-15 Padmapani C. Nallan Method for fabricating a gate structure
US7425493B2 (en) * 2002-08-17 2008-09-16 Samsung Electronics Co., Ltd. Methods of forming dielectric structures and capacitors
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US7357836B2 (en) * 2003-03-06 2008-04-15 University Of Massachusetts Crystalline membranes
JP4734823B2 (ja) * 2003-06-11 2011-07-27 富士通株式会社 膜多層構造体及びこれを用いるアクチュエータ素子、容量素子、フィルタ素子
US20060102197A1 (en) * 2004-11-16 2006-05-18 Kang-Lie Chiang Post-etch treatment to remove residues
US7368394B2 (en) * 2006-02-27 2008-05-06 Applied Materials, Inc. Etch methods to form anisotropic features for high aspect ratio applications
US20070202700A1 (en) * 2006-02-27 2007-08-30 Applied Materials, Inc. Etch methods to form anisotropic features for high aspect ratio applications
US7846845B2 (en) * 2006-10-26 2010-12-07 Applied Materials, Inc. Integrated method for removal of halogen residues from etched substrates in a processing system
US7655571B2 (en) * 2006-10-26 2010-02-02 Applied Materials, Inc. Integrated method and apparatus for efficient removal of halogen residues from etched substrates
US7946759B2 (en) * 2007-02-16 2011-05-24 Applied Materials, Inc. Substrate temperature measurement by infrared transmission
US20080203056A1 (en) * 2007-02-26 2008-08-28 Judy Wang Methods for etching high aspect ratio features
JP2009021584A (ja) * 2007-06-27 2009-01-29 Applied Materials Inc 高ｋ材料ゲート構造の高温エッチング方法
US20100330805A1 (en) * 2007-11-02 2010-12-30 Kenny Linh Doan Methods for forming high aspect ratio features on a substrate
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
WO2012148568A1 (fr) 2011-03-01 2012-11-01 Applied Materials, Inc. Procédé et appareil de transfert de substrat et confinement radical
US8992689B2 (en) 2011-03-01 2015-03-31 Applied Materials, Inc. Method for removing halogen-containing residues from substrate
KR101895307B1 (ko) 2011-03-01 2018-10-04 어플라이드 머티어리얼스, 인코포레이티드 듀얼 로드락 구성의 저감 및 스트립 프로세스 챔버
US8845816B2 (en) 2011-03-01 2014-09-30 Applied Materials, Inc. Method extending the service interval of a gas distribution plate
US9533332B2 (en) 2011-10-06 2017-01-03 Applied Materials, Inc. Methods for in-situ chamber clean utilized in an etching processing chamber
JP6545460B2 (ja) 2012-02-29 2019-07-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ロードロック構成内の除害・剥離処理チャンバ
US8932947B1 (en) 2013-07-23 2015-01-13 Applied Materials, Inc. Methods for forming a round bottom silicon trench recess for semiconductor applications
US9214377B2 (en) 2013-10-31 2015-12-15 Applied Materials, Inc. Methods for silicon recess structures in a substrate by utilizing a doping layer
US9960052B2 (en) 2014-04-02 2018-05-01 Applied Materials, Inc. Methods for etching a metal layer to form an interconnection structure for semiconductor applications
US9653320B2 (en) 2014-09-12 2017-05-16 Applied Materials, Inc. Methods for etching a hardmask layer for an interconnection structure for semiconductor applications
US9359679B2 (en) 2014-10-03 2016-06-07 Applied Materials, Inc. Methods for cyclically etching a metal layer for an interconnection structure for semiconductor applications

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5225031A (en) * 1991-04-10 1993-07-06 Martin Marietta Energy Systems, Inc. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
US5482003A (en) * 1991-04-10 1996-01-09 Martin Marietta Energy Systems, Inc. Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process
JP3095944B2 (ja) * 1994-06-21 2000-10-10 シャープ株式会社 酸化物結晶薄膜の製造方法及び薄膜素子
JP2852497B2 (ja) * 1995-03-16 1999-02-03 モレックス インコーポレーテッド 電気コネクタ
KR100199095B1 (ko) * 1995-12-27 1999-06-15 구본준 반도체 메모리 셀의 캐패시터 구조 및 그 제조방법
KR0175053B1 (ko) * 1996-05-04 1999-04-01 김광호 반도체장치의 다층 절연막 형성방법
US5767543A (en) * 1996-09-16 1998-06-16 Motorola, Inc. Ferroelectric semiconductor device having a layered ferroelectric structure
JPH11135774A (ja) * 1997-07-24 1999-05-21 Texas Instr Inc <Ti> 高誘電率シリケート・ゲート誘電体
KR100269320B1 (ko) * 1997-12-30 2000-10-16 윤종용 유전체막의형성방법및이를이용한캐패시터의제조방법
JP2000068466A (ja) * 1999-07-01 2000-03-03 Seiko Epson Corp 半導体記憶装置
US6319730B1 (en) * 1999-07-15 2001-11-20 Motorola, Inc. Method of fabricating a semiconductor structure including a metal oxide interface

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100633754B1 (ko) 1999-07-15 2006-10-16 프리스케일 세미컨덕터, 인크. 실리콘과의 금속 산화물 경계면을 포함하는 반도체 구조를제작하는 방법

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KR100633754B1 (ko) 2006-10-16
EP1069605A3 (fr) 2004-03-10
CN1281245A (zh) 2001-01-24
US6319730B1 (en) 2001-11-20
EP1069605B1 (fr) 2006-03-29
EP1069605A2 (fr) 2001-01-17
KR20010029897A (ko) 2001-04-16
SG85710A1 (en) 2002-01-15
DE60026909T2 (de) 2006-08-17
TW468211B (en) 2001-12-11
JP2001068467A (ja) 2001-03-16
DE60026909D1 (de) 2006-05-18

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