CN114242580A - Method for monitoring etching process of InGaAs/InAlAs epitaxial material of APD - Google Patents

Method for monitoring etching process of InGaAs/InAlAs epitaxial material of APD Download PDF

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CN114242580A
CN114242580A CN202111523078.8A CN202111523078A CN114242580A CN 114242580 A CN114242580 A CN 114242580A CN 202111523078 A CN202111523078 A CN 202111523078A CN 114242580 A CN114242580 A CN 114242580A
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apd
etching
ingaas
inalas
monitoring
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CN114242580B (en
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石峰
叶瑾琳
龚正致
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Zhejiang Guangte Technology Co ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

本发明公开了一种便于监控刻蚀过程的APD。本发明公开了一种监控APD外延结构刻蚀进度的方法，包括如下步骤：将上述便于监控刻蚀过程的APD进行光刻形成掩膜图形，然后浸泡在刻蚀液中进行刻蚀，接着观察APD表面，根据APD表面情况判断刻蚀进度，具体如下：当观察到APD表面出现“毛玻璃”现象时，则表明刻蚀液刻蚀到InGaAsP材料与InGaAs/InAlAs材料的界面处；当观察到APD表面“毛玻璃”现象开始褪去时，则表明刻蚀液开始刻蚀到InGaAs/InAlAs材料与InP材料界面处；当观察到APD表面重新变得光滑均匀时，则表明InGaAs/InAlAs材料已经完全被刻蚀完毕。

Figure 202111523078

The invention discloses an APD which is convenient for monitoring the etching process. The invention discloses a method for monitoring the etching progress of an APD epitaxial structure. On the APD surface, the etching progress is judged according to the APD surface conditions, as follows: when the "ground glass" phenomenon is observed on the APD surface, it indicates that the etching solution is etched to the interface between the InGaAsP material and the InGaAs/InAlAs material; when the APD is observed When the "ground glass" phenomenon on the surface begins to fade, it indicates that the etching solution begins to etch to the interface between the InGaAs/InAlAs material and the InP material; when it is observed that the APD surface becomes smooth and uniform again, it indicates that the InGaAs/InAlAs material has been completely etched Erosion is complete.

Figure 202111523078

Description

Method for monitoring etching process of InGaAs/InAlAs epitaxial material of APD
Technical Field
The invention relates to the technical field of wafer etching, in particular to an APD convenient for monitoring an etching process and a method for monitoring the etching progress of an APD epitaxial structure.
Background
An APD (avalanche photodiode) epitaxial structure is usually formed by growing InGaAs/InAlAs material on an InP substrate. In the preparation process of the APD chip, different patterns such as a groove, a table top, a contact hole and the like need to be etched on the epitaxial material; therefore, the depth and time for etching the epitaxial material need to be strictly controlled, and the etching is generally performed by using a chemical solution with high selectivity for the InGaAs/InAlAs and the InP material, but when the solution is etched to the interface of the two materials, no change is observed by naked eyes, so that it is difficult to intuitively judge whether the InGaAs/InAlAs material is etched to the bottom. At present, whether the InGaAs/InAlAs layer material is etched to the bottom can be judged only by etching for multiple times and then measuring the depth change after each etching by using a step instrument.
However, the above conventional etching scheme has the following disadvantages:
1. the change of the etching process cannot be observed visually;
2. the product is scrapped due to underetching or over etching;
3. and the mode of multiple times of etching and multiple times of depth measurement increases the working procedure time and has low efficiency.
The inventors have long worked and hoped that in some way the InGaAs/InAlAs material etch process of APD epitaxial structures can be visually observed, especially as the etch solution etches to the InGaAs/InAlAs-InP interface.
Disclosure of Invention
The invention aims to solve the defects in the prior art, and provides an APD convenient for monitoring an etching process and a method for monitoring the etching progress of an APD epitaxial structure.
An APD convenient for monitoring an etching process takes an InP material as a substrate, the surface of the InP material is covered with an InGaAs/InAlAs material, and the surface of the InGaAs/InAlAs material is covered with an InGaAsP material.
Preferably of InGaAsP material
Figure BDA0003408480620000021
When the thickness of InGaAsP is in
Figure BDA0003408480620000022
The following monitoring effect can be achieved, and the thicker InGaAsP can also meet the requirement, but the epitaxial growth and the material etching time are prolonged, and the cost is increased.
Preferably, a layer of InGaAsP material is grown on the surface of the InGaAs/InAlAs material by Metal-organic Chemical Vapor Deposition (MOCVD).
Specifically, the InGaAsP material is formed by depositing an organic compound of indium and gallium, arsine, phosphine, and the like in a special closed cavity under a certain temperature and pressure through chemical reaction.
A method for monitoring the etching progress of an APD epitaxial structure comprises the steps of photoetching the APD which is convenient to monitor the etching process to form a mask graph, soaking the mask graph in etching liquid to etch, observing the surface of the APD, and judging the etching progress according to the surface condition of the APD, wherein the method specifically comprises the following steps:
when the phenomenon of 'frosted glass' on the surface of the APD is observed, the etching liquid is etched to the interface of the InGaAsP material and the InGaAs/InAlAs material;
when the phenomenon of 'frosted glass' on the surface of the APD begins to fade, the etching liquid is indicated to begin to etch the interface between the InGaAs/InAlAs material and the InP material;
when the APD surface is observed to become smoother and more uniform again, this indicates that the InGaAs/InAlAs material has been completely etched.
Preferably, the etching liquid is InGaAs/InAlAs etching liquid. The conventional InGaAs/InAlAs etching solution also has an etching effect on InGaAsP, but the etching rate of the etching solution is far lower than that of the InGaAs/InAlAs etching solution.
Preferably, the "frosted glass" phenomenon is the appearance of a grayish white color on the APD surface.
According to the method, a thin InGaAsP layer is added on the epitaxial surface of the APD, the wafer is soaked in etching liquid, the etching liquid is firstly contacted with the thin InGaAsP layer to start slow etching, and when the solution is etched to the interface of the InGaAsP and the InGaAs/InAlAs material, the phenomenon that a layer of grey glass appears on the surface of the wafer is observed; with the increase of the etching time, when the etching liquid is etched to the interface of the InGaAs/InAlAs and the InP material, the phenomenon of 'frosted glass' on the surface of the wafer is gradually faded, and the surface becomes smooth and uniform again, which indicates that the InGaAs/InAlAs material is completely etched.
The phenomenon of 'ground glass' can be visually observed by naked eyes in the process of etching the InGaAs/InAlAs, when the phenomenon of 'ground glass' is faded away, the InGaAs/InAlAs material is completely etched, the change of the etching process of the InGaAs/InAlAs is visually observed, underetching or excessive etching is effectively avoided, the target can be reached by one-time etching, the time spent in the process is shortened, and the production efficiency is improved.
Drawings
FIG. 1 is a photograph showing the surface anomaly of a wafer when InP material is etched after InGaAs/InAlAs material is not completely etched.
FIG. 2 is a graph of normal etching when the etching degree is examined under a metallographic microscope.
Fig. 3 is a graph of over-etching when the etching degree is checked under a metallographic microscope.
Fig. 4 is a photograph of an object when the surface of the wafer appears grayish white similar to the phenomenon of "frosted glass", wherein the grayish white area is the "frosted glass" area (note: a very obvious phenomenon can be observed by naked eyes in actual operation, but the effect is not good after the image is shot by a camera and converted into a grayscale image).
Fig. 5 is a photograph of the "ground glass" area of the wafer surface under a metallographic microscope.
FIG. 6 is a photograph of the surface of a wafer under a metallographic microscope after the "frosted glass" phenomenon has completely faded away.
Detailed Description
The present invention will be further illustrated with reference to the following specific examples.
In the existing method for monitoring the etching progress of the APD epitaxial structure, high-selectivity etching liquid is adopted for etching, when the etching liquid is etched to the interface of InGaAs/InAlAs and InP, no change can be observed by naked eyes, and at the moment, 3 conditions of underetching, normal etching and over-etching can occur:
1. under-etching of the InGaAs/InAlAs material is difficult to distinguish by naked eyes, but when the next layer of material is etched, the under-etched area of the InGaAs/InAlAs material shows abnormity. As shown in FIG. 1, when the InGaAs/InAlAs material is not completely etched and then the InP material is etched, the surface of the InP material has uneven black block-shaped abnormality.
2. Over-etching is identified by a special monitoring pattern placed on the wafer surface, as shown in fig. 2 and 3. FIG. 2 is a diagram of normal etching when the etching degree is examined under a metallographic microscope, and the monitored graph is complete; FIG. 3 shows the excessive etching condition in the metallographic microscope for inspecting the etching degree, and the monitoring pattern is damaged or peeled off.
It should be noted that, whether the over-etching cannot be directly observed by naked eyes during the etching process, but only can be checked and confirmed under a metallographic microscope after the etching process is finished, and once the over-etching occurs, the product is discarded.
The invention provides a method for monitoring the etching progress of an APD epitaxial structure, which comprises the following steps:
depositing a layer of thickness of InP material on the surface of an APD epitaxial structure (the InP material is used as a substrate, and the surface of the InP material is covered with InGaAs/InAlAs material)
Figure BDA0003408480620000051
InGaAsP material of (a);
photoetching the APD epitaxial structure deposited with the InGaAsP material to form a mask pattern, then soaking the mask pattern in InGaAs/InAlAs etching liquid for etching, observing the surface of the wafer, and judging the etching progress according to the surface condition of the wafer, wherein the steps are as follows:
when the gray-white phenomenon similar to "frosted glass" on the wafer surface is observed, as shown in fig. 4, it indicates that the etching solution etches to the interface of the InGaAsP material and the InGaAs/InAlAs material, where the InGaAs/InAlAs material is not yet etched clean. At this time, the rough glass region (200 ×) on the wafer surface was observed by a metallographic microscope, and as shown in fig. 5, the surface was rough and uneven.
This phenomenon is not observed during InGaAs/InAlA etching if InGaAsP material is not deposited on the APD epitaxial structure surface.
When the phenomenon of 'frosted glass' on the surface of the wafer is observed to be faded, the etching liquid is indicated to be etched to the interface of the InGaAs/InAlAs material and the InP material;
when the phenomenon of 'frosted glass' on the surface of the wafer is observed to be completely faded, the situation shows that the InGaAs/InAlAs material is completely etched, the rough surface becomes smooth and flat, and the surface of the wafer becomes smooth and uniform again. At this time, the wafer surface was observed by a metallographic microscope (200 ×), and as shown in fig. 6, it was found that the rough surface became smooth and flat.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.

Claims (5)

1. An APD convenient for monitoring an etching process takes an InP material as a substrate, and the surface of the InP material is covered with an InGaAs/InAlAs material.
2. The APD for facilitating monitoring of an etch process of claim 1,
Figure FDA0003408480610000011
3. a method for monitoring the etching progress of an APD epitaxial structure is characterized by comprising the following steps: the method for monitoring the etching process of the APD according to claim 1 or 2 comprises the following steps of photoetching the APD which is convenient to monitor the etching process to form a mask pattern, then soaking the mask pattern in etching liquid to etch, observing the surface of the APD, and judging the etching progress according to the surface condition of the APD, wherein the specific steps are as follows:
when the phenomenon of 'frosted glass' on the surface of the APD is observed, the etching liquid is etched to the interface of the InGaAsP material and the InGaAs/InAlAs material;
when the phenomenon of 'frosted glass' on the surface of the APD begins to fade, the etching liquid is indicated to begin to etch the interface between the InGaAs/InAlAs material and the InP material;
when the APD surface is observed to become smoother and more uniform again, this indicates that the InGaAs/InAlAs material has been completely etched.
4. The method of monitoring the progress of etching an APD epitaxial structure of claim 3 wherein the etching solution is an InGaAs/InAlAs etching solution.
5. The method of monitoring the progress of etching an APD epitaxial structure according to claim 3 wherein the "frosted glass" phenomenon is the appearance of a grayish white color on the APD surface.
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH077004A (en) * 1993-03-19 1995-01-10 Mitsubishi Electric Corp Semiconductor etching solution, semiconductor etching method, and GaAs surface determination method
US6376272B1 (en) * 2000-06-06 2002-04-23 Lucent Technologies, Inc. InA1As etch stop layer for precise semiconductor waveguide fabrication
CN1595616A (en) * 2004-07-01 2005-03-16 武汉电信器件有限公司 Chemical corrosion method for 40Gb/s waveguide type PIN photo-detector tube core table
JP2017016788A (en) * 2015-06-29 2017-01-19 住友電気工業株式会社 Redox flow battery cell, redox flow battery cell stack, and redox flow battery
CN215070065U (en) * 2020-12-10 2021-12-07 国雄氢能科技(河南)有限公司 A membrane electrode multilayer sealing frame structure
CN216354315U (en) * 2021-09-30 2022-04-19 纬景储能科技有限公司 Self-positioning embedded electrode plate frame structure of flow battery
CN115172797A (en) * 2022-02-22 2022-10-11 中国科学院长春应用化学研究所 Fuel cell membrane electrode sealing structure and preparation method thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH077004A (en) * 1993-03-19 1995-01-10 Mitsubishi Electric Corp Semiconductor etching solution, semiconductor etching method, and GaAs surface determination method
US6376272B1 (en) * 2000-06-06 2002-04-23 Lucent Technologies, Inc. InA1As etch stop layer for precise semiconductor waveguide fabrication
CN1595616A (en) * 2004-07-01 2005-03-16 武汉电信器件有限公司 Chemical corrosion method for 40Gb/s waveguide type PIN photo-detector tube core table
JP2017016788A (en) * 2015-06-29 2017-01-19 住友電気工業株式会社 Redox flow battery cell, redox flow battery cell stack, and redox flow battery
CN215070065U (en) * 2020-12-10 2021-12-07 国雄氢能科技(河南)有限公司 A membrane electrode multilayer sealing frame structure
CN216354315U (en) * 2021-09-30 2022-04-19 纬景储能科技有限公司 Self-positioning embedded electrode plate frame structure of flow battery
CN115172797A (en) * 2022-02-22 2022-10-11 中国科学院长春应用化学研究所 Fuel cell membrane electrode sealing structure and preparation method thereof

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