CN114242580B - A method for monitoring the etching process of APD epitaxial material InGaAs/InAlAs - Google Patents
A method for monitoring the etching process of APD epitaxial material InGaAs/InAlAs Download PDFInfo
- Publication number
- CN114242580B CN114242580B CN202111523078.8A CN202111523078A CN114242580B CN 114242580 B CN114242580 B CN 114242580B CN 202111523078 A CN202111523078 A CN 202111523078A CN 114242580 B CN114242580 B CN 114242580B
- Authority
- CN
- China
- Prior art keywords
- apd
- etching
- ingaas
- inalas
- monitoring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
- H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
- H10P50/646—Chemical etching of Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Weting (AREA)
Abstract
本发明公开了一种便于监控刻蚀过程的APD。本发明公开了一种监控APD外延结构刻蚀进度的方法，包括如下步骤：将上述便于监控刻蚀过程的APD进行光刻形成掩膜图形，然后浸泡在刻蚀液中进行刻蚀，接着观察APD表面，根据APD表面情况判断刻蚀进度，具体如下：当观察到APD表面出现“毛玻璃”现象时，则表明刻蚀液刻蚀到InGaAsP材料与InGaAs/InAlAs材料的界面处；当观察到APD表面“毛玻璃”现象开始褪去时，则表明刻蚀液开始刻蚀到InGaAs/InAlAs材料与InP材料界面处；当观察到APD表面重新变得光滑均匀时，则表明InGaAs/InAlAs材料已经完全被刻蚀完毕。
The present invention discloses an APD that is convenient for monitoring an etching process. The present invention discloses a method for monitoring the etching progress of an APD epitaxial structure, comprising the following steps: performing photolithography on the APD that is convenient for monitoring an etching process to form a mask pattern, then immersing the APD in an etching solution for etching, then observing the APD surface, and judging the etching progress according to the APD surface conditions, specifically as follows: when a "ground glass" phenomenon is observed on the APD surface, it indicates that the etching solution etches to the interface between the InGaAsP material and the InGaAs/InAlAs material; when the "ground glass" phenomenon on the APD surface begins to fade, it indicates that the etching solution begins to etch to the interface between the InGaAs/InAlAs material and the InP material; when the APD surface is observed to become smooth and uniform again, it indicates that the InGaAs/InAlAs material has been completely etched.
Description
Technical Field
The invention relates to the technical field of wafer etching, in particular to an APD (avalanche photo diode) convenient for monitoring an etching process and a method for monitoring the etching progress of an APD epitaxial structure.
Background
APD (avalanche photodiode) epitaxial structures typically grow InGaAs/inaias material on InP substrates. In the preparation process of the APD chip, different patterns such as grooves, table tops, contact holes and the like are needed to be etched on the epitaxial material, so that the depth and time for etching the epitaxial material are needed to be strictly controlled, and chemical solutions with high selectivity on InGaAs/InAlAs and InP materials are generally adopted for carrying out, but when the solutions are etched to the interface of the two materials, no change is observed by naked eyes, and therefore whether the InGaAs/InAlAs materials are etched to the bottom is difficult to intuitively judge. At present, whether the InGaAs/InAlAs layer material is etched to the bottom can only be judged by etching for a plurality of times and then measuring the depth change after each etching by using a step instrument.
However, the conventional etching scheme has the following disadvantages:
1. The change of the etching process cannot be intuitively observed;
2. Under etching or over etching can cause product rejection;
3. and the mode of etching for multiple times and measuring depth for multiple times increases the working procedure time and has low efficiency.
Through long-term operation, the inventor hopes that the etching process of InGaAs/InAlAs materials of the APD epitaxial structure can be visually observed in a certain way, and particularly, when etching liquid is etched to the interface of InGaAs/InAlAs and InP, the change can be visually displayed.
Disclosure of Invention
The invention aims to solve the defects in the prior art, and provides an APD (avalanche photo diode) convenient for monitoring an etching process and a method for monitoring the etching progress of an APD epitaxial structure.
An APD which is convenient for monitoring etching process takes InP material as a substrate, inGaAs/InAlAs material is covered on the surface of the InP material, and InGaAsP material is covered on the surface of the InGaAs/InAlAs material.
Preferably of InGaAsP materialWhen InGaAsP thickness is atThe following monitoring effect can be achieved, and the thicker InGaAsP can meet the requirements, but the epitaxial growth and the etching time of the material can be prolonged, and the cost is increased.
Preferably, a layer of InGaAsP material is grown on the surface of the InGaAs/InAlAs material by a Metal Organic Chemical Vapor Deposition (MOCVD) process.
Specifically, the InGaAsP material is formed by adopting organic compounds of indium and gallium, arsine, phosphane and the like to perform chemical reaction and deposition in a special closed cavity at a certain temperature and pressure.
The method for monitoring the etching progress of the APD epitaxial structure comprises the steps of photoetching the APD which is convenient to monitor the etching process to form a mask pattern, immersing the mask pattern in etching liquid to etch, observing the surface of the APD, and judging the etching progress according to the surface condition of the APD, wherein the method comprises the following specific steps of:
When the phenomenon of glass frosting appears on the surface of the APD, the etching liquid is etched to the interface of the InGaAsP material and the InGaAs/InAlAs material;
When the phenomenon of glass frosting on the surface of the APD is observed to start to fade, the etching solution is indicated to start to etch to the interface of the InGaAs/InAlAs material and the InP material;
when the APD surface is observed to be again smooth and uniform, it is shown that the InGaAs/inaias material has been completely etched.
Preferably, the etching liquid is an InGaAs/InAlAs etching liquid. Conventional InGaAs/InAlAs etchants also have an etching effect on InGaAsP, but at a much lower etching rate than on InGaAs/InAlAs.
Preferably, the "ground glass" phenomenon is that the APD surface appears off-white.
According to the invention, a thin layer of InGaAsP is added on the epitaxial surface of an APD, a wafer is soaked in etching liquid, firstly, the etching liquid contacts the thin layer of InGaAsP material to start slow etching, when the solution is etched to the interface of InGaAsP and InGaAs/InAlAs material, a layer of grey-white phenomenon like frosted glass appears on the surface of the wafer, and when the etching liquid is etched to the interface of InGaAs/InAlAs and InP material, the frosted glass phenomenon on the surface of the wafer gradually fades, and the surface becomes smooth and uniform again, so that the InGaAs/InAlAs material is completely etched.
The glass wool phenomenon can be visually observed in the process of etching InGaAs/InAlAs, when the glass wool phenomenon is removed, the InGaAs/InAlAs material is completely etched, the change of the etching process of the InGaAs/InAlAs is visually observed, underetching or excessive etching is effectively avoided, the target can be achieved by one-time etching, the time spent in the working procedure is shortened, and the production efficiency is improved.
Drawings
Fig. 1 is a photograph of an anomaly on the wafer surface when the InGaAs/inaias material is not etched and the InP material is etched completely.
Fig. 2 is a graph of normal etching when the etching degree is checked under a metallographic microscope.
Fig. 3 is a graph of overetching when checking the degree of etching under a metallographic microscope.
Fig. 4 is a photograph of a real object when the grey-white phenomenon similar to the "frosted glass" appears on the surface of the wafer, wherein the grey-white region is the "frosted glass" region (note: a phenomenon which is very obvious to the naked eye in actual operation, but the effect is poor after the camera shoots and converts into a gray image).
Fig. 5 is a photograph of a "frosted glass" region of a wafer surface under a metallographic microscope.
Fig. 6 is a photograph of the wafer surface under a metallographic microscope after the "frosted glass" phenomenon has completely faded.
Detailed Description
The invention is further illustrated below in connection with specific embodiments.
The existing method for monitoring the etching progress of the APD epitaxial structure adopts high-selectivity etching liquid for etching, but when the etching is carried out on the interface of two materials of InGaAs/InAlAs and InP, no change is observed by naked eyes, and at the moment, 3 conditions of underetching, normal etching and overetching can occur:
1. it is difficult for the naked eye to distinguish the underetched condition of the InGaAs/inaias material, but the underetched region of the InGaAs/inaias material may show anomalies when the next layer of material is etched. As shown in fig. 1, when the InGaAs/inaias material is not etched completely and InP material is etched again, uneven black block-shaped anomalies appear on the surface.
2. The over-etch is identified by a special monitor pattern placed on the wafer surface, as shown in fig. 2 and 3. Fig. 2 is a graph of normal etching when the etching degree is checked under a metallographic microscope, the monitoring graph is complete, and fig. 3 is a situation of excessive etching when the etching degree is checked under the metallographic microscope, and the monitoring graph is damaged and falls off.
It should be noted that whether excessive etching cannot be directly observed by naked eyes in the etching process can only be checked and confirmed under a metallographic microscope after the etching is finished, and once excessive etching occurs, the product is scrapped.
The invention provides a method for monitoring etching progress of an APD epitaxial structure, which comprises the following steps:
Depositing a layer of InGaAs/InAlAs material on the surface of the APD epitaxial structure (with InP material as substrate and InGaAs/InAlAs material covered on the surface of InP material) with a thickness of InGaAsP material of (a);
Photoetching the APD epitaxial structure deposited with the InGaAsP material to form a mask pattern, then soaking the mask pattern in an InGaAs/InAlAs etching solution for etching, then observing the surface of a wafer, and judging the etching progress according to the surface condition of the wafer, wherein the method comprises the following specific steps of:
When the off-white phenomenon similar to "frosted glass" is observed on the wafer surface, as shown in fig. 4, it is indicated that the etching liquid etches the interface of the InGaAsP material and the InGaAs/inaias material, where the InGaAs/inaias material has not been etched cleanly. At this time, the frosted glass region (200×) on the wafer surface was observed by a metallographic microscope, and as shown in fig. 5, roughness and unevenness were found.
This phenomenon is not observed during the InGaAs/InAlA etching process if no InGaAsP material is deposited on the APD epitaxial structure surface.
When the phenomenon of glass wool on the surface of the wafer starts to fade, the etching solution starts to etch to the interface of the InGaAs/InAlAs material and the InP material;
when the phenomenon of 'frosted glass' on the surface of the wafer is completely removed, the phenomenon shows that the InGaAs/InAlAs material is completely etched, the rough surface becomes smooth and even, and the surface of the wafer becomes smooth and even again. At this time, the wafer surface was observed with a metallographic microscope (200×), and as shown in fig. 6, it was found that the rough surface became smooth and flat.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should make equivalent substitutions or modifications according to the technical scheme of the present invention and the inventive concept thereof, and should be covered by the scope of the present invention.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111523078.8A CN114242580B (en) | 2021-12-13 | 2021-12-13 | A method for monitoring the etching process of APD epitaxial material InGaAs/InAlAs |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111523078.8A CN114242580B (en) | 2021-12-13 | 2021-12-13 | A method for monitoring the etching process of APD epitaxial material InGaAs/InAlAs |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114242580A CN114242580A (en) | 2022-03-25 |
| CN114242580B true CN114242580B (en) | 2025-04-18 |
Family
ID=80755550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111523078.8A Active CN114242580B (en) | 2021-12-13 | 2021-12-13 | A method for monitoring the etching process of APD epitaxial material InGaAs/InAlAs |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114242580B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1595616A (en) * | 2004-07-01 | 2005-03-16 | 武汉电信器件有限公司 | Chemical corrosion method for 40Gb/s waveguide type PIN photo-detector tube core table |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3135185B2 (en) * | 1993-03-19 | 2001-02-13 | 三菱電機株式会社 | Semiconductor etching solution, semiconductor etching method, and method for determining GaAs surface |
| US6376272B1 (en) * | 2000-06-06 | 2002-04-23 | Lucent Technologies, Inc. | InA1As etch stop layer for precise semiconductor waveguide fabrication |
| JP2017016788A (en) * | 2015-06-29 | 2017-01-19 | 住友電気工業株式会社 | Redox flow battery cell, redox flow battery cell stack, and redox flow battery |
| CN215070065U (en) * | 2020-12-10 | 2021-12-07 | 国雄氢能科技(河南)有限公司 | A membrane electrode multilayer sealing frame structure |
| CN216354315U (en) * | 2021-09-30 | 2022-04-19 | 纬景储能科技有限公司 | Self-positioning embedded electrode plate frame structure of flow battery |
| CN115172797B (en) * | 2022-02-22 | 2024-08-23 | 中国科学院长春应用化学研究所 | Fuel cell membrane electrode sealing structure and preparation method thereof |
-
2021
- 2021-12-13 CN CN202111523078.8A patent/CN114242580B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1595616A (en) * | 2004-07-01 | 2005-03-16 | 武汉电信器件有限公司 | Chemical corrosion method for 40Gb/s waveguide type PIN photo-detector tube core table |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114242580A (en) | 2022-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI389334B (en) | Method of manufacturing and separating semiconductor devices | |
| JP4869967B2 (en) | Method for roughening silicon substrate and method for producing photovoltaic device | |
| US20100029034A1 (en) | Method of manufacturing solar cell | |
| EP3659183B1 (en) | Indium phosphide (inp) wafer having pits of olive-shape on the back side, method and etching solution for manufacturing the same | |
| JP5881865B2 (en) | Semiconductor surface roughening method | |
| CN103531672A (en) | Epitaxial structure with pores and growth method thereof | |
| EP1087427B1 (en) | Selective growth process for group III-nitride-based semiconductors | |
| CN103887371A (en) | Technology method for evenly etching InP cardinal plane array device | |
| CN114242580B (en) | A method for monitoring the etching process of APD epitaxial material InGaAs/InAlAs | |
| CN110808533A (en) | High-temperature ICP (inductively coupled plasma) etching method for aluminum-containing material in high-speed DFB (distributed feed Back) chip | |
| CN102268740B (en) | Textured single crystal | |
| CN104134733B (en) | Manufacturing method of patterned substrate used for growing semi-conductor film | |
| CN101807649A (en) | High-brightness AlGaInP-based light-emitting diode with introduced roughened layer and manufacturing method thereof | |
| CN103426981B (en) | A kind of GaN semiconductor LED chip manufacture method | |
| FR2977710A1 (en) | PROCESS FOR DETERMINING THE CRYSTALLINE QUALITY OF A III-V SEMICONDUCTOR LAYER | |
| US4256520A (en) | Etching of gallium stains in liquid phase epitoxy | |
| TW201528541A (en) | A method for producing light-emitting diode | |
| CN107403860B (en) | Sacrificial layer structure and method for stripping material layer using the same | |
| JP5004885B2 (en) | Semiconductor structure processing method | |
| JP6364933B2 (en) | Method for manufacturing a semiconductor optical device | |
| FR2772290A1 (en) | Removal of bromine containing polymer from plasma etched semiconductor wafer | |
| KR100567346B1 (en) | Al epispheric epitaxial etchant and method of manufacturing semiconductor device using same | |
| US10763100B2 (en) | Method for manufacturing restored substrate and method for manufacturing light emitting element | |
| Sun et al. | Selective wet etching of Al0. 7Ga0. 3As layer in concentrated HCl solution for peeling off GaAs microtips | |
| CN206697513U (en) | Sapphire Substrate with nano-micrometre compound pattern |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |