CN114242583A - Etching method of AlGaN material and application thereof - Google Patents
Etching method of AlGaN material and application thereof Download PDFInfo
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- CN114242583A CN114242583A CN202111576471.3A CN202111576471A CN114242583A CN 114242583 A CN114242583 A CN 114242583A CN 202111576471 A CN202111576471 A CN 202111576471A CN 114242583 A CN114242583 A CN 114242583A
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Abstract
本发明公开了一种AlGaN材料的刻蚀方法及其应用。所述AlGaN材料的刻蚀方法包括：将AlGaN材料置于刻蚀设备的刻蚀腔室内；向所述刻蚀腔室内通入包含HBr、O2和SF6的刻蚀气体，且以等离子体功率源将所述刻蚀气体转化为等离子体，再使所述等离子体与AlGaN材料表面的选定区域接触。本发明实施例提供的一种AlGaN材料的刻蚀方法，通过以特定比例的O2和SF6作为辅助刻蚀气体与主刻蚀气体配合作用，不仅能够防止刻蚀残余物的形成及去除刻蚀残余物，形成平坦的刻蚀表面，也不会影响刻蚀的速率，并且，在刻蚀过程中，不使用含Cl的刻蚀气体，从而不会形成难以去除的AlGaClx凸起残余物，进而提高刻蚀的质量。
The invention discloses an etching method of AlGaN material and its application. The etching method of the AlGaN material includes: placing the AlGaN material in an etching chamber of an etching device; feeding an etching gas containing HBr, O 2 and SF 6 into the etching chamber, and using a plasma A power source converts the etching gas into a plasma, which is then brought into contact with selected regions of the surface of the AlGaN material. An AlGaN material etching method provided by the embodiment of the present invention can not only prevent the formation of etching residues and remove etching by using a specific proportion of O 2 and SF 6 as auxiliary etching gases to cooperate with the main etching gas Etching residues, forming a flat etching surface, will not affect the rate of etching, and, during the etching process, no Cl-containing etching gas is used, so that difficult-to-remove AlGaCl x raised residues will not be formed , thereby improving the quality of etching.
Description
Technical Field
The invention relates to an etching method of an AlGaN material, in particular to an etching method of an AlGaN material and application thereof, belonging to the technical field of semiconductors.
Background
With the attention of GaN system materials becoming more and more extensive, light emitting devices and power devices of GaN system have also been receiving wide attention from scientific research institutions and enterprises, AlGaN materials are used in laser, LED, HEMT, mini LED and micro LED structures embodied in GaN, and layer structures of devices are etched in a device forming process, an Inductively Coupled Plasma (ICP) dry etching process is a common etching process, chlorine-containing gases are generally used for etching AlGaN materials, chlorine-containing gases are generally selected from chlorine, boron trichloride and the like, and chlorine-containing gases have a small amount of chlorine ions to react with AlGaN during etching AlGaN to form AlGaClx substances which are difficult to remove during etching and form cross-shaped protruding structures, as shown in fig. 1, the formed uneven protruding structures have a great influence on the flatness of etched surfaces, the uneven surface has great influence on the formation of other layers of the device and the migration of carriers of the device, and can directly cause serious influence on the device performance. Therefore, it is still a technical problem to be solved by the industry to provide an etching method for replacing chloride ions and achieve rapid etching of AlGaN materials to form a flat surface.
Disclosure of Invention
The invention mainly aims to provide an etching method of an AlGaN material and application thereof, so as to overcome the defects in the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides an AlGaN material etching method, which comprises the following steps: will contain HBr, O2And SF6Is converted into a plasma and the plasma is brought into contact with the AlGaN material.
The embodiment of the invention provides an AlGaN material etching method, which comprises the following steps:
placing the AlGaN material in an etching chamber of etching equipment;
introducing HBr and O into the etching chamber2And SF6And converting the etching gas into plasma by a plasma power source, and then contacting the plasma with a selected region on the surface of the AlGaN material.
The embodiment of the invention provides a manufacturing method of an AlGaN device, which comprises the step of carrying out dry etching on an AlGaN layer in the AlGaN device by using the etching method of the AlGaN material.
Compared with the prior art, the etching method of the AlGaN material provided by the embodiment of the invention is realized by using O in a specific proportion2And SF6The auxiliary etching gas and the main etching gas cooperate to prevent the formation of etching residues and remove the etching residues, form a flat etching surface, and not influence the etching rate, and in the etching process, the Cl-containing etching gas is not used, so that AlGaCl which is difficult to remove is not formedxAnd residues are raised, so that the etching quality is improved.
Drawings
FIG. 1 is a SEM image of a prior art etched AlGaN material with a chlorine-containing gas;
fig. 2 is a schematic flow chart illustrating a method for etching an AlGaN material according to an exemplary embodiment of the present invention;
fig. 3 is an SEM image of the AlGaN material after etching in inventive example 6.
Detailed Description
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
The embodiment of the invention provides an AlGaN material etching method, which comprises the following steps: will contain HBr, O2And SF6Is converted into a plasma and the plasma is brought into contact with the AlGaN material.
In some more specific embodiments, O is pre-mixed2And SF6Mixing to form mixed gas, and taking the mixed gas and HBr gas as etching gas.
In some more specific embodiments, the mixed gas contains O2And SF6In a molar ratio of (1.5-2):1, said HBr gas with O2And SF6The molar ratio of the formed mixed gas is (6-25): (1-4).
In some more specific embodiments, the method for etching an AlGaN material includes: and converting the etching gas into plasma by adopting a plasma power source with the power of 500-800W.
The embodiment of the invention provides an AlGaN material etching method, which comprises the following steps:
placing the AlGaN material in an etching chamber of etching equipment;
introducing HBr and O into the etching chamber2And SF6And converting the etching gas into plasma by a plasma power source, and then contacting the plasma with a selected region on the surface of the AlGaN material.
In some more specific embodiments, the method for etching an AlGaN material specifically includes: firstly, O is added2And SF6Mixed to form a mixed gas, and then mixed with the O2And SF6And introducing the formed mixed gas and HBr gas into the etching chamber.
In some more specific embodiments, the method for etching an AlGaN material specifically includes:
introducing the etching gas into the etching chamber, controlling the flow of HBr gas to be 80-200sccm and using O2And SF6The flow rate of the formed mixed gas is 10-40sccm, the flow rate of the carrier gas is 80-400sccm,
and controlling the pressure in the etching chamber to be 20-80mtorr, converting the etching gas into plasma by using a plasma power source with the power of 500-.
In some more specific embodiments, the mixed gas contains O2And SF6In a molar ratio of (1.5-2):1, said HBr gas with O2And SF6The molar ratio of the formed mixed gas is (6-25): (1-4).
In some more specific embodiments, the method for etching an AlGaN material further includes: the method comprises the steps of placing an AlGaN material in an etching chamber of etching equipment, raising the temperature in the etching chamber to 500-600 ℃, then blowing nitrogen on the surface of the AlGaN material to finish surface cleaning treatment of the AlGaN material, and then etching the AlGaN material.
The embodiment of the invention provides a manufacturing method of an AlGaN device, which comprises the step of carrying out dry etching on an AlGaN layer in the AlGaN device by using the etching method of the AlGaN material; of course, the method for manufacturing the AlGaN device further includes the step of manufacturing other structures before and after etching the AlGaN layer, wherein the step of manufacturing other structures is determined according to different types of specific devices, and is not specifically limited herein.
As will be described in further detail with reference to the accompanying drawings, unless otherwise specified, the manufacturing processes of the structural layers such as the AlGaN layer and the stress buffer layer in the embodiment of the present invention are all known to those skilled in the art, or a commercially available AlGaN epitaxial wafer may be directly used, which is not specifically limited herein, it should be understood that the embodiment of the present invention mainly explains and describes the etching method of the AlGaN material provided by the present invention, and the etching apparatus and the growth apparatus used therein are all known to those skilled in the art, and are not specifically limited herein.
Referring to fig. 1, an etching method of an AlGaN material includes the following steps:
1) providing a substrate, and forming an AlGaN layer on the substrate;
the substrate may be a sapphire substrate, a silicon carbide substrate, or a gallium nitride substrate; in order to improve the crystal quality of the AlGaN layer, when sapphire or silicon carbide is selected as a substrate, a stress buffer layer can be formed on the substrate, and then the AlGaN layer is formed on the stress buffer layer, wherein the stress buffer layer can be made of aluminum nitride;
it should be understood that, according to different types of devices to be manufactured and different positions and thicknesses of functional layers of different devices of an AlGaN layer, the Al content of the AlGaN layer is different, and the thickness of the AlGaN layer is different, the present invention mainly studies on an etching process for AlGaN, and therefore, the Al content and the thickness of the AlGaN layer are not specifically limited;
in addition, since the deposition and formation of the AlGaN layer are usually performed in an MOCVD apparatus, and the etching is performed in an ICP apparatus, after the deposition and formation of the AlGaN layer, the AlGaN material to be etched needs to be taken out and then transported to the ICP apparatus, and although there is a requirement for a transportation environment during transportation, the AlGaN layer inevitably contacts the external environment, so that when the AlGaN material is transported to the ICP apparatus, the AlGaN layer needs to be cleaned first, and the cleaning process includes: firstly, heating the temperature in the etching chamber to 500-600 ℃, and then purging the surface of the AlGaN layer by using nitrogen, wherein the water vapor possibly adsorbed on the surface of the AlGaN layer can be removed in the temperature environment of 500-600 ℃, and the impurity substances possibly adhered to the surface of the AlGaN layer can be removed by purging the nitrogen, so that the impurity substances adhered to the surface of the AlGaN layer are prevented from being difficult to remove in the etching process;
naturally, the AlGaN layer can be etched in different thicknesses and different sizes according to different types of devices to be manufactured and different etching targets, the main explanation of the present invention is that the etching of the surface of the AlGaN layer does not require the size and the etching depth of a target region, and the AlGaN layer can be etched regionally according to the etching method of the present invention;
2) after or without performing surface cleaning treatment on the surface of the AlGaN layer, etching the AlGaN layer by using an inductively coupled plasma etching (ICP) apparatus, specifically including:
placing AlGaN material in an etching chamber of inductively coupled plasma etching (ICP) etching equipment, and introducing HBr gas and O gas into the etching chamber2And SF6The mixed gas is used as etching gas, the HBr flow rate is controlled to be 80-200sccm, the carrier gas flow rate is controlled to be 80-400sccm, and O is used as etching gas2And SF6The flow rate of the formed mixed gas is 10-40sccm, wherein HBr is the main etching gas，O2And SF6As the auxiliary etching gas, the carrier gas is an inert gas, such as He gas or Ar gas,
and controlling the pressure in the etching chamber to be 20-80mtorr, converting the etching gas into plasma by using a plasma power source with the power of 500-.
It is noted that O is introduced into the etch chamber prior to the introduction of the O into the etch chamber2And SF6Mixing according to the molar ratio of (1.5-2):1 to form mixed gas, and then adding O2And SF6The mixed gas is introduced into the etching chamber according to the flow rate of 10-40sccm, and the HBr gas are mixed with O2And SF6The molar ratio of the formed mixed gas is (6-25): (1-4).
In the etching method for the AlGaN material provided by the embodiment of the present invention, in the etching process, HBr is used as a main etching gas, and since the chemical activity of Br radicals is much lower than that of radicals of other halogen elements, the electronegativity of the halogen elements is as follows: f (3.98)>Cl(3.16)>Br (2.96), the electronegativity of Br ion is lower, AlGaBr substance can not be formed by reaction with AlGaN in the etching process of AlGaN material, the etching is milder, large etching damage can not be caused to the side wall of an AlGaN material etching area or a formed etching structure (such as a groove and the like), the surface of the etched area is flatter, and meanwhile, O is used as the material in the embodiment of the invention2And SF6The gas is used as auxiliary etching gas, and the introduced amount is less; due to O2Has strong oxidizing property, O2The existence of the HBr can prevent the formation and accumulation of residues in the etching process, oxidize a damaged area generated in the etching process, etch and remove the oxidized area by virtue of HBr gas, and contribute to forming a flat appearance; and SF6Can be increased, but if SF is used alone, the etching rate is faster6Etching is carried out, although the etching rate is faster because the electronegativity of F is highest, the etching process can be carried out on the silicon nitride layerThe bottom and the side wall of the etching structure (such as the etching groove) are damaged, which is not beneficial to forming a flat groove shape; thus, in the auxiliary etching gas, O2More than SF6So that O can be used while accelerating the etching2The side wall of the etching area is oxidized and repaired, thereby being beneficial to accelerating the etching speed and forming the appearance with smooth surface, therefore, O in the invention2And SF6The molar ratio of (1.5-2) to (1).
The technical solution, the implementation process and the principle thereof will be further explained with reference to the specific embodiments as follows.
In the following embodiments, different etching gases are selected to perform dry etching on the same AlGaN material, and the etching depth and the etching morphology of the etching region in each embodiment are observed.
The carrier gas used in the following embodiments is Ar gas, the flow rate of the carrier gas is kept consistent, namely 80-400sccm, and the etching time in the following embodiments is controlled to be the same, it should be noted that the models and specifications of the inductively coupled plasma etching (ICP) etching apparatuses used in the following embodiments are the same, where the same AlGaN material refers to the same AlGaN material manufacturing process, the same size specification, and the like.
Example 1
An etching method of AlGaN material comprises the following steps:
placing an AlGaN material in an etching chamber of inductively coupled plasma etching (ICP) etching equipment, introducing HBr serving as etching gas into the etching chamber, controlling the flow of the HBr to be 150sccm, controlling the pressure in the etching chamber to be 60mtorr, converting the etching gas into plasma by using a plasma power source with the power of 550W, applying a bias voltage of 250V on the AlGaN material, and enabling the plasma to be in contact with a selected region on the surface of the AlGaN material, so that the etching of the selected region of the AlGaN material is realized, wherein the etching time is 30S, and the etched AlGaN material is marked as a sample 1; in this embodiment, the etching parameters and the surface roughness of the etched AlGaN material are shown in table 1.
Example 2
An etching method of AlGaN material comprises the following steps:
placing AlGaN material in an etching chamber of inductively coupled plasma etching (ICP) etching equipment, and introducing SF into the etching chamber6As an etching gas and controlling the SF6The flow rate of the etching gas is 150sccm, the pressure in the etching chamber is controlled to be 60mtorr, the etching gas is converted into plasma by a plasma power source with the power of 550W, 250V bias voltage is applied to the AlGaN material, and the plasma is made to contact with a selected area on the surface of the AlGaN material, so that the etching of the selected area of the AlGaN material is realized, the etching time is 30S, and the etched AlGaN material is marked as a sample 2; in this embodiment, the etching parameters and the surface roughness of the etched AlGaN material are shown in table 1.
Example 3
An etching method of AlGaN material comprises the following steps:
placing AlGaN material in an etching chamber of inductively coupled plasma etching (ICP) etching equipment, and introducing HBr and SF into the etching chamber6As etching gas, wherein HBr is main etching gas, SF6For assisting the etching gas, and controlling the flow rate of HBr to be 150sccm, SF6The flow rate of the etching gas is 25sccm, the pressure in the etching chamber is controlled to be 60mtorr, the etching gas is converted into plasma by a plasma power source with the power of 550W, 250V bias voltage is applied to the AlGaN material, and the plasma is made to contact with a selected area on the surface of the AlGaN material, so that the etching of the selected area of the AlGaN material is realized, the etching time is 30S, and the etched AlGaN material is marked as a sample 3; in this embodiment, the etching parameters and the surface roughness of the etched AlGaN material are shown in table 1.
Example 4
An etching method of AlGaN material comprises the following steps:
placing the AlGaN material in an etching chamber of inductively coupled plasma etching (ICP) etching equipment, and etching towards the etching chamberIntroducing HBr and O into the etching chamber2As etching gas, wherein HBr is main etching gas, O2For assisting the etching gas, and controlling the flow rate of HBr to be 150sccm, O2The flow rate of the etching gas is 25sccm, the pressure in the etching chamber is controlled to be 60mtorr, the etching gas is converted into plasma by a plasma power source with the power of 550W, 250V bias voltage is applied to the AlGaN material, and the plasma is made to contact with a selected area on the surface of the AlGaN material, so that the etching of the selected area of the AlGaN material is realized, the etching time is 30S, and the etched AlGaN material is marked as a sample 4; in this embodiment, the etching parameters and the surface roughness of the etched AlGaN material are shown in table 1.
Example 5
An etching method of AlGaN material comprises the following steps:
placing AlGaN material in an etching chamber of inductively coupled plasma etching (ICP) etching equipment, and introducing SF into the etching chamber6And O2As an etching gas, wherein the SF6As a main etching gas, O2To assist the etching gas and control the SF6At a flow rate of 150sccm, O2The flow rate of the etching gas is 25sccm, the pressure in the etching chamber is controlled to be 60mtorr, the etching gas is converted into plasma by a plasma power source with the power of 550W, 250V bias voltage is applied to the AlGaN material, and the plasma is made to contact with a selected area on the surface of the AlGaN material, so that the etching of the selected area of the AlGaN material is realized, the etching time is 30S, and the etched AlGaN material is marked as a sample 5; in this embodiment, the etching parameters and the surface roughness of the etched AlGaN material are shown in table 1.
Example 6
An etching method of AlGaN material comprises the following steps:
placing AlGaN material in an etching chamber of inductively coupled plasma etching (ICP) etching equipment, and introducing HBr and O into the etching chamber2And SF6As etching gas, wherein HBr is main etching gas, O2And SF6To assist the etching gas, the flow rate of HBr in the etching gas is controlled to be 150sccm, O2And SF6The flow rate of the mixed gas is 25sccm, the pressure in the etching chamber is controlled to be 60mtorr, the etching gas is converted into plasma by a plasma power source with the power of 550W, 250V bias voltage is applied to the AlGaN material, and the plasma is made to contact with a selected area on the surface of the AlGaN material, so that the etching of the selected area of the AlGaN material is realized, the etching time is 30S, and the etched AlGaN material is marked as a sample 6; in this embodiment, the etching parameters and the surface roughness of the etched AlGaN material are shown in table 1 and fig. 3, and it can be seen from fig. 3 that the surface of the etched AlGaN material in this embodiment is flat.
It should be noted that, in the embodiment, the auxiliary etching gas is O first2And SF6And mixing the mixed gas according to the molar ratio of 1.5:1 to form mixed gas, and introducing the mixed gas and HBr gas into the etching cavity to be used as etching gas together.
Example 7
An etching method of AlGaN material comprises the following steps:
placing AlGaN material in an etching chamber of inductively coupled plasma etching (ICP) etching equipment, and introducing HBr and O into the etching chamber2And SF6As etching gas, wherein HBr is main etching gas, O2And SF6To assist the etching gas, the flow rate of HBr in the etching gas is controlled to be 150sccm, O2And SF6The flow rate of the mixed gas is 25sccm, the pressure in the etching chamber is controlled to be 60mtorr, the etching gas is converted into plasma by a plasma power source with the power of 550W, 250V bias voltage is applied to the AlGaN material, and the plasma is made to contact with a selected area on the surface of the AlGaN material, so that the etching of the selected area of the AlGaN material is realized, and the etching time is 30S; the etched AlGaN material was denoted as sample 7; in this embodiment, the etching parameters and the surface roughness of the etched AlGaN material are shown in table 1.
It should be noted that, in the present embodiment, the descriptionThe auxiliary etching gas is first O2And SF6And mixing the mixed gas according to the molar ratio of 1.8:1 to form mixed gas, and introducing the mixed gas and HBr gas into the etching cavity to be used as etching gas together.
Example 8
An etching method of AlGaN material comprises the following steps:
placing AlGaN material in an etching chamber of inductively coupled plasma etching (ICP) etching equipment, and introducing HBr and O into the etching chamber2And SF6As etching gas, wherein HBr is main etching gas, O2And SF6To assist the etching gas, the flow rate of HBr in the etching gas is controlled to be 150sccm, O2And SF6The flow rate of the mixed gas is 25sccm, the pressure in the etching chamber is controlled to be 60mtorr, the etching gas is converted into plasma by a plasma power source with the power of 550W, 250V bias voltage is applied to the AlGaN material, and the plasma is made to contact with a selected area on the surface of the AlGaN material, so that the etching of the selected area of the AlGaN material is realized, and the etching time is 30S; marking the etched AlGaN material as a sample 8; in this embodiment, the etching parameters and the surface roughness of the etched AlGaN material are shown in table 1.
It should be noted that, in the embodiment, the auxiliary etching gas is O first2And SF6And mixing the mixed gas and HBr gas according to a molar ratio of 2:1 to form mixed gas, and introducing the mixed gas and the HBr gas into the etching cavity to be used as etching gas together.
Example 9
An etching method of AlGaN material comprises the following steps:
placing AlGaN material in an etching chamber of inductively coupled plasma etching (ICP) etching equipment, and introducing HBr and O into the etching chamber2And SF6As etching gas, wherein HBr is main etching gas, O2And SF6To assist the etching gas, the flow rate of HBr in the etching gas is controlled to be 220sccm, O2And SF6The flow rate of the mixed gas is 25sccm, and controlling the etching chamberThe internal pressure is 60mtorr, a plasma power source with the power of 550W is used for converting the etching gas into plasma, 250V bias voltage is applied to the AlGaN material, and the plasma is made to be in contact with a selected area on the surface of the AlGaN material, so that the etching of the selected area of the AlGaN material is realized, and the etching time is 30S; the etched AlGaN material was denoted as sample 9; in this embodiment, the etching parameters and the surface roughness of the etched AlGaN material are shown in table 1.
It should be noted that, in the embodiment, the auxiliary etching gas is O first2And SF6And mixing the mixed gas according to the molar ratio of 1.8:1 to form mixed gas, and introducing the mixed gas and HBr gas into the etching cavity to be used as etching gas together.
Example 10
An etching method of AlGaN material comprises the following steps:
placing AlGaN material in an etching chamber of inductively coupled plasma etching (ICP) etching equipment, and introducing HBr and O into the etching chamber2And SF6As etching gas, wherein HBr is main etching gas, O2And SF6To assist the etching gas, the flow rate of HBr in the etching gas is controlled to be 70sccm, O2And SF6The flow rate of the mixed gas is 25sccm, the pressure in the etching chamber is controlled to be 60mtorr, the etching gas is converted into plasma by a plasma power source with the power of 550W, 250V bias voltage is applied to the AlGaN material, and the plasma is made to contact with a selected area on the surface of the AlGaN material, so that the etching of the selected area of the AlGaN material is realized; the etched AlGaN material was denoted as sample 10; in this embodiment, the etching parameters and the surface roughness of the etched AlGaN material are shown in table 1.
It should be noted that, in the embodiment, the auxiliary etching gas is O first2And SF6And mixing the mixed gas according to the molar ratio of 1.8:1 to form mixed gas, and introducing the mixed gas and HBr gas into the etching cavity to be used as etching gas together.
Example 11
An etching method of AlGaN material comprises the following steps:
placing AlGaN material in an etching chamber of inductively coupled plasma etching (ICP) etching equipment, and introducing HBr and O into the etching chamber2And SF6As etching gas, wherein HBr is main etching gas, O2And SF6To assist the etching gas, the flow rate of HBr in the etching gas is controlled to be 150sccm, O2And SF6The flow rate of the mixed gas is 25sccm, the pressure in the etching chamber is controlled to be 60mtorr, the etching gas is converted into plasma by a plasma power source with the power of 550W, 250V bias voltage is applied to the AlGaN material, the plasma is made to contact with a selected area on the surface of the AlGaN material, and therefore the etching of the selected area of the AlGaN material is achieved, and the etched AlGaN material is marked as a sample 11; in this embodiment, the etching parameters and the surface roughness of the etched AlGaN material are shown in table 1.
It should be noted that, in the embodiment, the auxiliary etching gas is O first2And SF6And mixing the materials according to the molar ratio of 1:2 to form mixed gas, and then introducing the mixed gas into the etching chamber.
Example 12
An etching method of AlGaN material comprises the following steps:
placing AlGaN material in an etching chamber of inductively coupled plasma etching (ICP) etching equipment, and introducing HBr and O into the etching chamber2And SF6Mixed gas formed by mixing according to a molar ratio of 20:1.8:1 is used as etching gas, the flow rate of the mixed gas is controlled to be 150sccm, the pressure in the etching chamber is controlled to be 60mtorr, the etching gas is converted into plasma by a plasma power source with the power of 550W, 250V bias voltage is applied to the AlGaN material, the plasma is made to be in contact with a selected region on the surface of the AlGaN material, etching of the selected region of the AlGaN material is achieved, the etching time is 30S, and the etched AlGaN material is marked as a sample 12; in this embodiment, the etching parameters and the surface roughness of the etched AlGaN material are shown in table 1.
By observing the SEM surfaces of different samples obtained in examples 1-12 and measuring the roughness of the surface features, for comparison, the average value of the roughness of the sample 1 is selected to be 1, all other samples are compared with the roughness of the sample 1, and the relationship between the features and the roughness after etching can be visually reflected according to the ratio of the roughness.
Table 1 shows the main etching parameters for dry etching of AlGaN materials and the characterization of the morphology after etching in examples 1 to 12
As can be seen from the comparative experiment results shown in Table 1, comparative samples 1 and 2 are shown to have SF as the etching time6The etching speed of the etching gas is higher than that of HBr, but SF6When etching is carried out, the surface roughness of an AlGaN material etching area is increased, and the side wall of the etching area is damaged to form a rough surface; as can be seen by comparing sample 1 with sample 4, and sample 2 with sample 5, O2The addition of the AlGaN material can reduce the roughness of an AlGaN material etching area to a certain extent and improve the smoothness of the sidewall appearance of the etching area; comparing sample 1 and sample 3, it can be seen that SF is used6The etching speed can be improved, but the surface roughness of the AlGaN material etching area is increased.
Comparison of samples 4 and 6 shows that although no SF is used6The AlGaN material of sample 4 had the smallest roughness and the smoothest surface, but the etching speed was slow, and the etching speed (etching depth) in example 6 was 1.68 times that in example 4 in the same time.
Example 7 increased O compared to example 62Thus, the etching depth of sample 7 was increased, and etching was performedIs reduced because of O2The addition of the silicon nitride can improve the oxidation performance, improve the etching rate and improve the surface flatness; in contrast, in comparative example 8, O was further increased2Does not further increase the etching rate because of excessive O2Dilute SF6，SF6The contact probability with the AlGaN material is reduced, and the etching rate is further reduced.
Comparing example 9 with example 10, the roughness of sample 9 was significantly improved by increasing the HBr flow rate (sample 9) and decreasing the HBr flow rate (sample 10), and changing the main etch gas flow rate, without simply increasing or decreasing the etch rate, and also affecting the roughness of the etched surface, whereas the roughness of sample 10 in example 10 was much less than that of sample 7 in example 7, but the etch rate was significantly reduced.
Comparing examples 6-8 with example 11, SF in etching gas of example 116The higher content, but example 11 did not significantly increase the etching rate, but the roughness of sample 11 in example 11 was greatly increased because of SF6The content increases and O2When the content is reduced, SF is reduced due to the reduced surface oxidation6Etching increases roughness, but due to O2The oxidation is reduced and the etch rate is not substantially increased much.
Comparing example 12 with examples 6-11, HBr, O2And SF6After mixing, the etching gas is introduced into the etching apparatus together as the etching gas, and the etching gas is formed into plasma for etching, in comparison with example 7, the etching rate and the etching roughness are reduced in example 12 because the main etching gas and the auxiliary etching gas are introduced into the ICP etching apparatus together after being mixed in advance, since SF is used6Relative molecular weights of HBr and O2Much more, although the gases are mixed prior to being introduced into the etch chamber, the relatively large molecular weight of the SF gas6Will sink down and enter the etching chamber to be thick, SF6Under the mixed gas and is rotatedWhen the plasma is formed, the plasma is formed in a delayed way compared with the other two gases, so that the etching rate is slowed down, the etching rate is not favorably improved, and the SF is respectively used6And O2When the mixed gas and HBr are introduced, SF is generated6The introduced pipeline is different from the pipeline of the main etching gas, when the gas is formed into plasma in the etching chamber, the gas of each pipeline is introduced into the etching chamber, the plasma can be quickly formed without SF6The sinking phenomenon does not affect the etching rate.
In summary, O is combined with the etch rate and the flatness of the etched surface2And SF6The mixed gas is formed by mixing according to the molar ratio of 1.8:1 and then is introduced into the etching chamber, and the etching effect is best.
According to the etching method of the AlGaN material, provided by the embodiment of the invention, the AlGaN is etched by adopting the etching gas without chlorine element, different etching samples are comprehensively compared, HBr is used as the main etching gas, and O is used as the main etching gas2And SF6As the auxiliary etching gas, the etching speed and the etching surface smoothness can be considered, and the etching speed and the etching quality of the AlGaN material are further improved.
It should be noted that, because different substances (such as substances of silicon or germanium or arsenic system) use different etching chambers, different etching conditions and different byproducts generated during etching, the embodiment of the present invention is proposed to improve the defect that AlGaN substances have specific byproducts during ICP etching, unlike etching of other material systems.
According to the etching method of the AlGaN material provided by the embodiment of the invention, O in a specific proportion is used2And SF6The auxiliary etching gas and the main etching gas cooperate to prevent the formation of etching residues and remove the etching residues, form a flat etching surface, and not influence the etching rate, and in the etching process, the Cl-containing etching gas is not used, so that AlGaCl which is difficult to remove is not formedxAnd the residues are raised, so that the etching quality is improved.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
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