CN1146982C - 半导体器件的制造方法 - Google Patents

半导体器件的制造方法 Download PDF

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Publication number
CN1146982C
CN1146982C CNB981167616A CN98116761A CN1146982C CN 1146982 C CN1146982 C CN 1146982C CN B981167616 A CNB981167616 A CN B981167616A CN 98116761 A CN98116761 A CN 98116761A CN 1146982 C CN1146982 C CN 1146982C
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CN
China
Prior art keywords
film
mentioned
amorphous
dielectric film
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB981167616A
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English (en)
Chinese (zh)
Other versions
CN1215228A (zh
Inventor
������ɽ����
山内智
竹广忍
吉丸正树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Publication of CN1215228A publication Critical patent/CN1215228A/zh
Application granted granted Critical
Publication of CN1146982C publication Critical patent/CN1146982C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNB981167616A 1997-10-17 1998-07-31 半导体器件的制造方法 Expired - Fee Related CN1146982C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP285715/1997 1997-10-17
JP285715/97 1997-10-17
JP28571597A JP3979711B2 (ja) 1997-10-17 1997-10-17 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN1215228A CN1215228A (zh) 1999-04-28
CN1146982C true CN1146982C (zh) 2004-04-21

Family

ID=17695096

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB981167616A Expired - Fee Related CN1146982C (zh) 1997-10-17 1998-07-31 半导体器件的制造方法

Country Status (5)

Country Link
US (1) US5940677A (2)
JP (1) JP3979711B2 (2)
KR (1) KR100326910B1 (2)
CN (1) CN1146982C (2)
TW (1) TW383487B (2)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258655B1 (en) * 1999-03-01 2001-07-10 Micron Technology, Inc. Method for improving the resistance degradation of thin film capacitors
US20050191765A1 (en) * 2000-08-04 2005-09-01 Cem Basceri Thin film capacitor with substantially homogenous stoichiometry
US6617266B2 (en) 2001-04-12 2003-09-09 Applied Materials, Inc. Barium strontium titanate annealing process
US6593181B2 (en) * 2001-04-20 2003-07-15 International Business Machines Corporation Tailored insulator properties for devices
KR20030013123A (ko) * 2001-08-07 2003-02-14 삼성전자주식회사 커패시터를 갖는 반도체 장치 및 그의 제조 방법
KR20030057204A (ko) * 2001-12-28 2003-07-04 동부전자 주식회사 절연막의 습식식각 또는 화학적 건식식각을 이용한 반도체커패시터 제조방법
JP3621695B2 (ja) 2002-07-29 2005-02-16 株式会社東芝 半導体装置及び素子形成用基板
US6734057B2 (en) * 2002-09-27 2004-05-11 Infineon Technologies Ag Method of patterning capacitors and capacitors made thereby
US6784478B2 (en) * 2002-09-30 2004-08-31 Agere Systems Inc. Junction capacitor structure and fabrication method therefor in a dual damascene process
US7553755B2 (en) * 2006-01-18 2009-06-30 Macronix International Co., Ltd. Method for symmetric deposition of metal layer
CN102403227B (zh) * 2010-09-17 2013-10-23 中芯国际集成电路制造(北京)有限公司 台阶状硅锗源/漏结构的制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0516031A1 (en) * 1991-05-29 1992-12-02 Ramtron International Corporation Stacked ferroelectric memory cell and method
JPH0750395A (ja) * 1993-08-06 1995-02-21 Hitachi Ltd 半導体記憶装置およびその製造方法
US5555486A (en) * 1994-12-29 1996-09-10 North Carolina State University Hybrid metal/metal oxide electrodes for ferroelectric capacitors

Also Published As

Publication number Publication date
JP3979711B2 (ja) 2007-09-19
JPH11121695A (ja) 1999-04-30
TW383487B (en) 2000-03-01
CN1215228A (zh) 1999-04-28
KR100326910B1 (ko) 2002-09-05
US5940677A (en) 1999-08-17
KR19990037030A (ko) 1999-05-25

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CF01 Termination of patent right due to non-payment of annual fee