TW383487B - Manufacturing method for semiconductor device - Google Patents
Manufacturing method for semiconductor device Download PDFInfo
- Publication number
- TW383487B TW383487B TW087107785A TW87107785A TW383487B TW 383487 B TW383487 B TW 383487B TW 087107785 A TW087107785 A TW 087107785A TW 87107785 A TW87107785 A TW 87107785A TW 383487 B TW383487 B TW 383487B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- manufacturing
- dielectric layer
- amorphous
- scope
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28571597A JP3979711B2 (ja) | 1997-10-17 | 1997-10-17 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW383487B true TW383487B (en) | 2000-03-01 |
Family
ID=17695096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087107785A TW383487B (en) | 1997-10-17 | 1998-05-20 | Manufacturing method for semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5940677A (2) |
| JP (1) | JP3979711B2 (2) |
| KR (1) | KR100326910B1 (2) |
| CN (1) | CN1146982C (2) |
| TW (1) | TW383487B (2) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6258655B1 (en) * | 1999-03-01 | 2001-07-10 | Micron Technology, Inc. | Method for improving the resistance degradation of thin film capacitors |
| US20050191765A1 (en) * | 2000-08-04 | 2005-09-01 | Cem Basceri | Thin film capacitor with substantially homogenous stoichiometry |
| US6617266B2 (en) | 2001-04-12 | 2003-09-09 | Applied Materials, Inc. | Barium strontium titanate annealing process |
| US6593181B2 (en) * | 2001-04-20 | 2003-07-15 | International Business Machines Corporation | Tailored insulator properties for devices |
| KR20030013123A (ko) * | 2001-08-07 | 2003-02-14 | 삼성전자주식회사 | 커패시터를 갖는 반도체 장치 및 그의 제조 방법 |
| KR20030057204A (ko) * | 2001-12-28 | 2003-07-04 | 동부전자 주식회사 | 절연막의 습식식각 또는 화학적 건식식각을 이용한 반도체커패시터 제조방법 |
| JP3621695B2 (ja) | 2002-07-29 | 2005-02-16 | 株式会社東芝 | 半導体装置及び素子形成用基板 |
| US6734057B2 (en) * | 2002-09-27 | 2004-05-11 | Infineon Technologies Ag | Method of patterning capacitors and capacitors made thereby |
| US6784478B2 (en) * | 2002-09-30 | 2004-08-31 | Agere Systems Inc. | Junction capacitor structure and fabrication method therefor in a dual damascene process |
| US7553755B2 (en) * | 2006-01-18 | 2009-06-30 | Macronix International Co., Ltd. | Method for symmetric deposition of metal layer |
| CN102403227B (zh) * | 2010-09-17 | 2013-10-23 | 中芯国际集成电路制造(北京)有限公司 | 台阶状硅锗源/漏结构的制造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0516031A1 (en) * | 1991-05-29 | 1992-12-02 | Ramtron International Corporation | Stacked ferroelectric memory cell and method |
| JPH0750395A (ja) * | 1993-08-06 | 1995-02-21 | Hitachi Ltd | 半導体記憶装置およびその製造方法 |
| US5555486A (en) * | 1994-12-29 | 1996-09-10 | North Carolina State University | Hybrid metal/metal oxide electrodes for ferroelectric capacitors |
-
1997
- 1997-10-17 JP JP28571597A patent/JP3979711B2/ja not_active Expired - Fee Related
-
1998
- 1998-05-19 US US09/081,562 patent/US5940677A/en not_active Expired - Lifetime
- 1998-05-20 TW TW087107785A patent/TW383487B/zh not_active IP Right Cessation
- 1998-07-31 CN CNB981167616A patent/CN1146982C/zh not_active Expired - Fee Related
- 1998-10-12 KR KR1019980042539A patent/KR100326910B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3979711B2 (ja) | 2007-09-19 |
| JPH11121695A (ja) | 1999-04-30 |
| CN1215228A (zh) | 1999-04-28 |
| KR100326910B1 (ko) | 2002-09-05 |
| US5940677A (en) | 1999-08-17 |
| KR19990037030A (ko) | 1999-05-25 |
| CN1146982C (zh) | 2004-04-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |