CN114709295B - Method and device for reducing attenuation of perc battery piece - Google Patents
Method and device for reducing attenuation of perc battery piece Download PDFInfo
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- CN114709295B CN114709295B CN202210627572.7A CN202210627572A CN114709295B CN 114709295 B CN114709295 B CN 114709295B CN 202210627572 A CN202210627572 A CN 202210627572A CN 114709295 B CN114709295 B CN 114709295B
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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- H10F71/121—The active layers comprising only Group IV materials
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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- H10F71/128—Annealing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
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- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
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Abstract
本发明涉及一种降低perc电池片衰减的方法及装置，步骤如下：将硅基体置于放电等离子反应器电离出口下方，硅基体放置于密封腔体中，利用等离子羽辉在1000w‑2000w的功率下将硅基体表面温度升高第一表面温度；向等离子反应器中通入甲烷和硅烷，并在2500w‑3500w的功率下控制在时间t1内将硅基体表面升温至第二表面温度，甲烷和硅烷的气体通入速率v=Q*h/t1;当腔体内压力至达到0.1mbar时，停止通入甲烷和硅烷气体，并将功率调至1000w‑2000w，反应时间3‑5min后，抽真空；向等离子反应器中通入氨气，并控制在5s内使得腔体压力再次达到0.1mbar时，停止通气，并在功率1000w‑2000w下，反应时间3‑5min，恢复常压，将硅基体取出。本发明优化了硅基体的镀膜工艺，从而形成了耐衰减的perc电池片结构，且整体良品率好，效果增加。The invention relates to a method and a device for reducing the attenuation of perc cells. The steps are as follows: placing a silicon substrate under the ionization outlet of a discharge plasma reactor, placing the silicon substrate in a sealed cavity, and utilizing the plasma plume at a power of 1000w-2000w The surface temperature of the silicon substrate is raised to the first surface temperature; methane and silane are fed into the plasma reactor, and the silicon substrate surface is heated to the second surface temperature within the time t1 under the power of 2500w-3500w, methane and The gas feeding rate of silane is v=Q*h/t1; when the pressure in the cavity reaches 0.1mbar, stop feeding methane and silane gas, and adjust the power to 1000w-2000w, and vacuumize after the reaction time is 3-5min ; Pour ammonia gas into the plasma reactor, and control it to make the cavity pressure reach 0.1mbar again within 5s, stop the ventilation, and under the power of 1000w-2000w, the reaction time is 3-5min, return to normal pressure, and the silicon matrix take out. The invention optimizes the coating process of the silicon substrate, thereby forming a decay-resistant perc cell structure, with good overall yield and increased effect.
Description
Technical Field
The invention relates to the technical field of perc batteries, in particular to a method and a device for reducing attenuation of a perc battery piece.
Background
Although perc cells have a higher conversion efficiency, perc cells have a higher attenuation than other crystalline silicon cells, and processes and devices for suppressing attenuation for mono-poly perc cells have also been successively introduced for this purpose. It is considered that attenuation can be suppressed by using low-temperature slurry and by using a means such as gettering, high-temperature annealing, and laser rapid annealing. Factors leading to degradation are still under investigation and, in addition to the conventional B-O pair, there are still unknown factors under investigation that may be associated with higher metal impurity levels in polysilicon.
The invention adopts a new method and a new device to prepare the perc battery with better anti-attenuation effect.
Disclosure of Invention
The present invention is directed to a method for reducing attenuation of perc cells to solve the above problems.
To achieve the above object, in one aspect, the present invention provides a method for reducing attenuation of a perc cell, comprising the steps of:
(1) placing a silicon substrate with an aluminum oxide film deposited on the back surface below an ionization outlet of a discharge plasma reactor, placing the silicon substrate in a sealed cavity, and raising the surface temperature of the silicon substrate to a first surface temperature by using plasma plume under the power of 1000-2000 w;
(2) introducing methane and silane into the plasma reactor, and heating the surface of the silicon substrate to a second surface temperature within time t1 under the power of 2500w-3500w, wherein the gas introduction rate v = Q x h/t1 x D of the methane and the silane is the heating power, and h is a correlation coefficient; t1 is less than or equal to 20s, and D is the caliber of the outlet;
(3) when the pressure in the cavity reaches 0.1mbar, stopping introducing methane and silane gas, adjusting the power to 1000w-2000w, reacting for 3-5min, and vacuumizing;
(4) and (3) introducing ammonia gas into the plasma reactor, controlling the pressure of the cavity within 5s to reach 0.1mbar again, stopping introducing the gas, reacting for 3-5min under the power of 1000w-2000w, recovering the normal pressure, and taking out the silicon substrate.
The method ionizes the introduced gas into active plasma by using a plasma reactor, and simultaneously heats the surface of the silicon substrate by using the temperature of plasma plume to reach a proper reaction condition; the invention establishes a relational expression by the gas speed, the power, the heating time and the outlet caliber, so that the reaction temperature and the reaction time are kept at the optimal conditions, and the conditions of low yield and unstable product performance caused by uncertain factors in the reaction are avoided.
In a preferred embodiment of the present invention, the silicon substrate is taken out and left standing for 30min at a third surface temperature, and then is placed in a room temperature environment, wherein the third surface temperature is 1/2 of the second surface temperature.
And (3) slowly cooling the silicon substrate after being taken out for 30min instead of directly and rapidly cooling the silicon substrate, wherein the cooling temperature is half of the highest temperature so as to stabilize the performance of the silicon substrate after reaction.
In a preferred embodiment of the invention, the discharge is pulsed at a frequency of 30 Hz.
Because the temperature at the outlet of the reactor is higher and can reach 2000 ℃ at most, the continuous discharge can not only increase the temperature too fast and be unfavorable for producing active particles, but also can influence the service life of the electrode, and the pulse discharge can be adopted to prevent the phenomenon. The high-efficiency active particle generation rate is realized through 30Hz, and overhigh temperature is avoided.
In a preferred embodiment of the present invention, the ratio of the introduced contents of the methane gas and the silane gas is in the range of 15 to 20: 1.
The thickness of the silicon nitride is adjusted by the ratio of the introduced mixed gas, wherein the ratio of the introduced contents of the methane gas and the silane gas is in a range of 15-20:1, which is a preferable ratio.
In a preferred embodiment of the present invention, the first surface temperature is 600-700 ℃, and the second surface temperature is 900-1100 ℃.
In a preferred embodiment of the present invention, the outlet of the plasma reactor has a ceramic tubular structure.
The ceramic has good high temperature resistance, and the outlet of the ceramic is made of ceramic materials, so that the effective working time of the reactor can be prolonged, and the efficiency is improved.
In a preferred embodiment of the present invention, the outlet of the reactor is located at a distance of 10cm to 20cm from the surface of the silicon substrate.
The outlet distance of the reactor is controlled in a reasonable range, so that heat can be quickly transferred, and good reaction of active particles can be ensured.
In a preferred embodiment of the present invention, the distance between the outlet of the reactor and the surface of the silicon substrate is adjustable by a motor, and the motor is configured to ensure that the temperature of the surface of the silicon substrate is kept constant after reaching a specified value under a fixed power condition according to the temperature value and the gas content in the cavity.
Due to the changes of reaction voltage, current and gas content, which inevitably affect the stability of reaction conditions, the distance is adaptively adjusted according to the temperature value and the gas content by controlling the motor to maintain the reaction temperature at the optimal temperature in real time.
In another aspect of the invention, the invention provides a device for reducing attenuation of perc battery pieces, which comprises a cavity, a plasma reactor, a gas supply unit and a controller;
the outlet of the plasma reactor is communicated with the cavity;
the gas supply unit is communicated with the inlet of the plasma reactor;
the cavity is also provided with a backflow port capable of controlling flow, and the backflow port is communicated with an inlet pipeline of the plasma reactor;
a temperature sensor, a gas concentration sensor and a silicon substrate opposite to the outlet of the reactor are arranged in the cavity;
the controller is electrically connected with the plasma reactor, the gas supply unit and the temperature sensor so as to control the power of the reactor and the gas inflow and backflow rates of the gas supply unit according to the temperature value and the gas content.
The device can automatically control parameters of the reactor, gas supply flow, circulating gas flow and power through the controller, and realizes accurate control of reaction conditions.
Wherein through the design of backward flow mouth make between reactor and the cavity constitute the air current circulation, let in the secondary ionization in the reactor again at unreacted active particle to promote the effective active ingredient in the cavity fast, improve reaction efficiency.
In a preferred embodiment of the present invention, the outlet of the reactor is a telescopic structure, and the telescopic structure is driven by a motor;
the controller is also configured to control the motor to drive the outlet to stretch under the condition of fixed power according to the temperature value and the gas content, and the temperature of the surface of the silicon substrate is guaranteed to be constant after reaching a specified value.
The reaction temperature is maintained at the optimum temperature in real time by controlling the motor to adaptively adjust the distance according to the temperature value and the gas content.
Compared with the prior art, the invention has the beneficial effects that:
1. the method ionizes the introduced gas into active plasma by using a plasma reactor, and simultaneously heats the surface of the silicon substrate by using the temperature of plasma plume to reach a proper reaction condition; the method establishes a relational expression by the gas speed, the power and the heating time so as to keep the reaction temperature and the reaction time at the optimal conditions, and avoids the conditions of low yield and unstable product performance caused by uncertain factors in the reaction.
2. Because the temperature at the outlet of the reactor is higher and can reach 2000 ℃ at most, the continuous discharge can not only increase the temperature too fast and be unfavorable for producing active particles, but also can influence the service life of the electrode, and the pulse discharge can be adopted to prevent the phenomenon. The high-efficiency active particle generation rate is realized through 30Hz, and the overhigh temperature is avoided.
3. The reaction temperature is maintained at the optimum temperature in real time by controlling the motor to adaptively adjust the distance according to the temperature value and the gas content.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1:
a method of reducing attenuation in a perc cell, comprising the steps of:
(1) placing a silicon substrate with an aluminum oxide film deposited on the back surface below an ionization outlet of a discharge plasma reactor, placing the silicon substrate in a sealed cavity, and raising the surface temperature of the silicon substrate to a first surface temperature by using plasma plume under the power of 1000-2000 w;
(2) introducing methane and silane into the plasma reactor, and heating the surface of the silicon substrate to a second surface temperature within time t1 under the power of 2500w-3500w, wherein the gas introduction rate v = Q x h/t1 x D of the methane and the silane is the heating power, and h is a correlation coefficient; t1 is less than or equal to 20s, and D is the caliber of the outlet;
(3) when the pressure in the cavity reaches 0.1mbar, stopping introducing methane and silane gas, adjusting the power to 1000w-2000w, reacting for 3-5min, and vacuumizing;
(4) and (3) introducing ammonia gas into the plasma reactor, controlling the pressure of the cavity within 5s to reach 0.1mbar again, stopping introducing the gas, reacting for 3-5min under the power of 1000w-2000w, recovering the normal pressure, and taking out the silicon substrate.
Specifically, the value of the coefficient h is 15 to 20.
The method ionizes the introduced gas into active plasma by using a plasma reactor, and simultaneously heats the surface of the silicon substrate by using the temperature of plasma plume to reach a proper reaction condition; the method establishes a relational expression by the gas speed, the power and the heating time so as to keep the reaction temperature and the reaction time at the optimal conditions, and avoids the conditions of low yield and unstable product performance caused by uncertain factors in the reaction.
In a preferred embodiment of the present invention, the silicon substrate is taken out and left standing for 30min at a third surface temperature, and then is placed in a room temperature environment, wherein the third surface temperature is 1/2 of the second surface temperature.
And (3) slowly cooling the silicon substrate taken out for 30min instead of directly and rapidly cooling the silicon substrate, wherein the cooling temperature is half of the highest temperature so as to stabilize the performance of the silicon substrate after reaction.
In a preferred embodiment of the invention, the discharge is pulsed at a frequency of 30 Hz.
Because the temperature at the outlet of the reactor is high, up to 2000 ℃, the continuous discharge can heat up too fast, which is not beneficial to producing active particles, and can influence the service life of the electrode, and the pulse discharge can be adopted to prevent the phenomenon. The high-efficiency active particle generation rate is realized through 30Hz, and the overhigh temperature is avoided.
In a preferred embodiment of the present invention, the ratio of the introduced methane gas to the introduced silane gas is in the range of 15 to 20: 1.
The thickness of the silicon nitride is adjusted by the ratio of the introduced mixed gas, wherein the ratio of the introduced contents of the methane gas and the silane gas is in a range of 15-20:1, which is a preferable ratio.
In a preferred embodiment of the present invention, the first surface temperature is 600-700 ℃, and the second surface temperature is 900-1100 ℃.
In a preferred embodiment of the present invention, the outlet of the plasma reactor has a ceramic tubular structure.
The ceramic has good high temperature resistance, and the outlet of the ceramic is made of ceramic materials, so that the effective working time of the reactor can be prolonged, and the efficiency is improved.
In a preferred embodiment of the present invention, the outlet of the reactor is located at a distance of 10cm to 20cm from the surface of the silicon substrate.
The outlet distance of the reactor is controlled in a reasonable range, so that heat can be quickly transferred, and good reaction of active particles can be ensured.
In a preferred embodiment of the present invention, the distance between the outlet of the reactor and the surface of the silicon substrate is adjustable by a motor, and the motor is configured to ensure that the temperature of the surface of the silicon substrate is kept constant after reaching a specified value under a fixed power condition according to the temperature value and the gas content in the cavity.
Due to the changes of reaction voltage, current and gas content, which inevitably affect the stability of reaction conditions, the distance is adaptively adjusted according to the temperature value and the gas content by controlling the motor to maintain the reaction temperature at the optimal temperature in real time.
Example 2
The invention provides a device for reducing attenuation of a perc cell, which comprises a cavity, a plasma reactor, an air supply unit and a controller, wherein the cavity is provided with a plurality of air holes;
the outlet of the plasma reactor is communicated with the cavity;
the gas supply unit is communicated with the inlet of the plasma reactor;
the cavity is also provided with a backflow port capable of controlling flow, and the backflow port is communicated with an inlet pipeline of the plasma reactor;
a temperature sensor, a gas concentration sensor and a silicon substrate opposite to the outlet of the reactor are arranged in the cavity;
the controller is electrically connected with the plasma reactor, the gas supply unit and the temperature sensor so as to control the power of the reactor, the gas inflow of the gas supply unit and the flow of the reflux port according to the temperature value and the gas content.
The device can automatically control parameters of the reactor, gas supply flow, circulating gas flow and power through the controller, and realizes accurate control of reaction conditions.
Wherein through the design of backward flow mouth make between reactor and the cavity constitute the air current circulation, let in the secondary ionization in the reactor again at unreacted active particle to promote the effective active ingredient in the cavity fast, improve reaction efficiency.
In a preferred embodiment of the present invention, the outlet of the reactor is a telescopic structure, and the telescopic structure is driven by a motor;
the controller is also configured to control the motor to drive the outlet to stretch under the condition of fixed power according to the temperature value and the gas content, and the temperature of the surface of the silicon substrate is guaranteed to be constant after reaching a specified value.
The reaction temperature is maintained at the optimum temperature in real time by controlling the motor to adaptively adjust the distance according to the temperature value and the gas content.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and the preferred embodiments of the present invention are described in the above embodiments and the description, and are not intended to limit the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (8)
1. A method of reducing attenuation in a perc cell, comprising the steps of:
(1) placing a silicon substrate with an aluminum oxide film deposited on the back surface below an ionization outlet of a discharge plasma reactor, placing the silicon substrate in a sealed cavity, and raising the surface temperature of the silicon substrate to a first surface temperature by using plasma plume under the power of 1000-2000 w; the discharge adopts a pulse form, and the pulse frequency is 30 Hz; the distance between the outlet of the reactor and the surface of the silicon substrate is adjustable through a motor, and the motor is configured to ensure that the temperature of the surface of the silicon substrate is kept constant after reaching a specified value under the condition of fixed power according to the temperature value and the gas content in the cavity;
(2) introducing methane and silane into the plasma reactor, and heating the surface of the silicon substrate to a second surface temperature within time t1 under the power of 2500w-3500w, wherein the gas introduction rate v = Q h/t 1D of the methane and the silane is v = Q h/t 1D, wherein Q is the heating power, h is a correlation coefficient, and the value of h is 15-20; t1 is less than or equal to 20s, and D is the caliber of the outlet;
(3) when the pressure in the cavity reaches 0.1mbar, stopping introducing methane and silane gas, adjusting the power to 1000w-2000w, reacting for 3-5min, and vacuumizing;
(4) and (3) introducing ammonia gas into the plasma reactor, controlling the pressure of the cavity to reach 0.1mbar within 5s, stopping introducing the gas, reacting for 3-5min under the power of 1000w-2000w, recovering the normal pressure, and taking out the silicon substrate.
2. The method of claim 1, wherein the silicon substrate is removed and allowed to stand at a third surface temperature for 30min and then placed in a room temperature environment, wherein the third surface temperature is 1/2 degrees f the second surface temperature.
3. The method of reducing attenuation in perc cells of claim 1, wherein the methane and silane gases are introduced at a ratio in the range of 15-20: 1.
4. The method of claim 1, wherein the first surface temperature is 600-700 ℃ and the second surface temperature is 900-1100 ℃.
5. The method of reducing attenuation in perc cells of claim 1, wherein the outlet of the plasma reactor is a ceramic tubular structure.
6. The method of reducing attenuation in perc cells of claim 5, wherein the outlet of the reactor is located from 10cm to 20cm from the surface of the silicon substrate.
7. A device for reducing attenuation of perc cells, for use in a method according to any of claims 1 to 6, comprising a chamber, a plasma reactor, a gas supply unit and a controller;
the outlet of the plasma reactor is communicated with the cavity;
the gas supply unit is communicated with the inlet of the plasma reactor;
the cavity is also provided with a backflow port capable of controlling flow, and the backflow port is communicated with an inlet pipeline of the plasma reactor;
a temperature sensor, a gas concentration sensor and a silicon substrate opposite to the outlet of the reactor are arranged in the cavity;
the controller is electrically connected with the plasma reactor, the gas supply unit and the temperature sensor so as to control the power of the reactor and the gas inflow and backflow rates of the gas supply unit according to the temperature value and the gas content.
8. The apparatus for reducing attenuation in perc cells of claim 7, wherein the outlet of said reactor is a telescoping structure, said telescoping structure being driven by a motor;
the controller is also configured to control the motor to drive the outlet to stretch under the condition of fixed power according to the temperature value and the gas content, and the temperature of the surface of the silicon substrate is kept constant after reaching a specified value.
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| CN202210627572.7A CN114709295B (en) | 2022-06-06 | 2022-06-06 | Method and device for reducing attenuation of perc battery piece |
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Address after: No. 43 Bailing South Road, Quzhou City, Zhejiang Province 324022 Patentee after: Yidao New Energy Technology Co.,Ltd. Address before: 324022 room 604, building 3, Donggang Third Road, green industry cluster, Qujiang District, Quzhou City, Zhejiang Province Patentee before: A New Energy Technology (Quzhou) Co.,Ltd. |
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