CN116242523B - A piezoresistive high-interference-resistant shock wave pressure capture method and device - Google Patents
A piezoresistive high-interference-resistant shock wave pressure capture method and deviceInfo
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- CN116242523B CN116242523B CN202310286509.6A CN202310286509A CN116242523B CN 116242523 B CN116242523 B CN 116242523B CN 202310286509 A CN202310286509 A CN 202310286509A CN 116242523 B CN116242523 B CN 116242523B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
- G01L5/14—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring the force of explosions; for measuring the energy of projectiles
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Abstract
本发明公开了一种压阻式高抗干扰冲击波压力捕获方法及其装置，由传感器封装本体、信号放大模块、信号处理模块及电源模块组成。所述传感器封装壳体内布置两组由压敏电阻、硅膜片组成的冲击波捕获装置，所述其中一侧内完全填充硬度材料，另一侧内为空腔。关键在于一组压敏电阻桥路电极接线需要正接，另一组电极需反接，由于电磁波传播速度远快于冲击波传播速度，因此其在启爆的同时就到达了传感器的安装点，并在传感器传输电缆上通过电磁感应途径在传感器的信号输出线上直接叠加上它的信号。基于此，压敏电阻阻值微变化引起的输出电压经信号处理模块处理后正反相抵，从而达到消除因输出压力曲线震荡而影响最终实测压力值准确性的目的。
The present invention discloses a piezoresistive high-interference-resistant shock wave pressure capture method and device, which consists of a sensor package body, a signal amplification module, a signal processing module and a power supply module. Two groups of shock wave capture devices composed of piezoresistors and silicon diaphragms are arranged in the sensor package shell, one side of which is completely filled with hardness material, and the other side is a cavity. The key is that one group of piezoresistive bridge electrodes needs to be connected in the positive direction, and the other group of electrodes needs to be connected in the reverse direction. Since the propagation speed of electromagnetic waves is much faster than the propagation speed of shock waves, they reach the installation point of the sensor at the same time as the detonation, and directly superimpose their signals on the signal output line of the sensor through the electromagnetic induction path on the sensor transmission cable. Based on this, the output voltage caused by the slight change in the resistance value of the piezoresistor is processed by the signal processing module and the positive and negative phases are offset, thereby achieving the purpose of eliminating the influence of the output pressure curve oscillation on the accuracy of the final measured pressure value.
Description
Technical Field
The invention belongs to the field of shock wave pressure testing, and particularly relates to a piezoresistive high-anti-interference shock wave pressure capturing method and device.
Background
The overpressure of shock waves is an important measurement content of an antiknock experiment of a protection engineering structure. Currently, in the shock wave pressure test, the pressure sensors commonly used are divided into two types, namely a piezoelectric pressure sensor and a piezoresistive pressure sensor. However, in the pressure measuring process, the two sensors are greatly influenced by light radiation, electromagnetic radiation and the like generated by explosion, and finally the reliability of the overpressure value of the shock wave is influenced.
The piezoresistive sensor has the advantages of very high sensitivity, high resolution, high frequency response, insignificant influence of vibration generated during explosion and the like, and particularly has very high natural frequency and very wide dynamic response range, so that the piezoresistive sensor has the incomparable advantage of the piezoelectric sensor, and becomes an important technical means for measuring the overpressure of shock waves of an explosion field. Unlike piezoelectric sensors, most of the sensitive parts of the conventional piezoresistive sensors are silicon diaphragms, and the piezoresistive sensors have strong sensitivity to light radiation, electromagnetic radiation and thermal shock in the infrared to visible light range and are easily interfered by the electromagnetic radiation, the optical radiation and the thermal shock generated by explosion.
In addition to shock waves generated in the explosive explosion, gas explosion and other processes, interference factors such as electromagnetic radiation, optical radiation, vibration impact and the like are generated in the detonation process. The light radiation and the electromagnetic radiation generated by explosion decay rapidly along with the increase of the distance, so that the electromagnetic wave and the light radiation can be attenuated to a great extent when the sensor is arranged and installed in a well-protected middle-far field arrangement, and the impact wave measurement signal is generally not influenced. However, under the condition of near-field arrangement of the pressure sensor, electromagnetic waves and optical radiation signals can be superimposed on the shock wave signals, so that serious interference is generated on measurement of shock wave pressure, especially when chemical explosion shock wave overpressure measurement of fuel gas and the like with long acting time is performed, the radiation effects of light, heat and the like are larger, therefore, the initial signal output by the sensor generates high-frequency oscillation, errors and even distortion are caused to the final measured pressure value, and the use scene of the piezoresistive pressure sensor is greatly limited.
The Chinese patent 200510037982.2 discloses a device composition and principle of a piezoresistive high-frequency dynamic high-pressure sensor, which mainly comprises a piezoresistive sensitive component, a sensor base, a switching circuit and a lead-out cable, solves the problem of direct flush packaging of a stress surface of a pressure sensitive membrane, and meets the requirements of high dynamic frequency response and extremely small rise time of the sensor during dynamic high-pressure measurement. The device composition and principle of the Chinese patent 200510038458.7 piezoresistive high-frequency dynamic low-pressure sensor consist of a piezoresistive sensitive component, a sensor base, a switching circuit and an outgoing cable, are high-frequency dynamic piezoresistive low-pressure sensors based on MEMS (Micro Electro MECHANICAL SYSTEM) silicon micromachining technology, are particularly suitable for dynamic pressure measurement of aerodynamic tests (commonly called wind tunnel tests), hydraulic engineering, aerospace, weapon tests, ships and the like, and have good dynamic frequency response performance.
The above two devices and methods weaken the interference and influence of electromagnetic wave and optical radiation effects to a certain extent, but still cannot eliminate the influence of the interference on the voltage signal (such as the curve in the square frame of fig. 1) before the explosion shock wave overpressure reaches the piezoresistive sensitive element under the condition of a near field arrangement sensor, and for this reason, a method is generally adopted, in which the overpressure wave starting point of the baseline drop change caused by the negative pulse residue is considered, and the calculation of the overpressure wave obviously has a certain error. The measured shock wave pressure curve of the pressure sensor is shown in figure 1.
In order to weaken the influence of electromagnetic waves and the like on the output signal of a sensor, the main stream practice is divided into two main ways, namely, a protective film is added to the sensor, the method can cause the frequency response loss and the dynamic performance reduction of the sensor, and the other method is to smear vaseline, silicone oil and the like on the surface of a force sensitive area of the sensor, but the method can influence the measurement accuracy of the sensor.
Disclosure of Invention
In order to solve the technical problems mentioned in the background art, the invention provides a piezoresistive high-anti-interference shock wave pressure capturing method and a piezoresistive high-anti-interference shock wave pressure capturing device.
In order to achieve the technical purpose, the technical scheme of the invention is as follows:
The utility model provides a high anti-interference shock wave pressure capture device of piezoresistance, includes sensor encapsulation casing, signal amplification module, signal processing module and power module, and wherein sensor encapsulation casing surface is equipped with shock wave capture device, and shock wave capture device's output passes sensor encapsulation casing and signal amplification module's input is connected, shock capture device gathers electromagnetic wave signal, optical radiation signal, thermal shock signal and shock wave signal and transmits respectively for signal amplification module, and wherein shock wave capture device offsets electromagnetic wave signal, optical radiation signal and thermal shock signal that gathers through the mode that is directly connected with signal amplification module in opposite directions, shock wave capture device's output passes the inside part of sensor encapsulation casing and suppresses the output of partial shock wave signal through filling hardness material, signal amplification module's output access signal processing module's input, process shock wave signal after the shock wave signal is amplified and output actual shock wave pressure curve through signal processing module, power module supplies power for signal amplification module and signal processing and output module.
Preferably, the piezoresistive high anti-interference shock wave pressure capturing device further comprises a silicon diaphragm, the silicon diaphragm is fixed on the surface of the sensor packaging shell, the shock wave capturing device is embedded in the silicon diaphragm, and leads of two poles of the shock capturing device penetrate through the sensor packaging shell and are connected with the signal amplifying module.
Preferably, the shock wave capturing device comprises two piezoresistors distributed in a mirror image mode, the first piezoresistor is connected with the signal amplifying module in a reverse mode, the second piezoresistor is connected with the signal amplifying module in a forward mode, and output ends of the first signal amplifier and the second signal amplifier are connected with input ends of the signal processing module respectively.
Further, the piezoresistor comprises a first resistor R1, a second resistor R2, a third resistor R3 and a fourth resistor R4 which are connected into a Wheatstone bridge in a diamond connection mode, wherein the positive electrode of the power module is connected with the public end of the first resistor R1 and the public end of the fourth resistor R4, the negative electrode of the power module is connected with the public end of the second resistor R2 and the public end of the third resistor R3, and the public end of the first resistor R1 and the public end of the second resistor R2 and the public end of the third resistor R3 and the public end of the fourth resistor R4 are used as the input end of the amplifying module of the signal amplifier.
Further, the part of the sensor package housing, through which the lead wires of the output ends of the first piezoresistors connected by the signal amplification module pass, is filled with a hardness material.
A shock wave pressure capturing method based on a piezoresistive high anti-interference shock wave pressure capturing device comprises the following steps of
S1, a piezoresistive high anti-interference shock wave pressure capturing device collects electromagnetic waves, optical radiation, thermal shock forward voltage signals and reverse voltage signals generated by explosion and a forward voltage signal of shock waves;
S2, the piezoresistive high anti-interference impact wave pressure capturing device amplifies forward voltage signals and reverse voltage signals of the collected electromagnetic waves, optical radiation and thermal shock signals, and counteracts the amplified electromagnetic waves, optical radiation and thermal shock voltage signals;
s3, the piezoresistive high-anti-interference shock wave pressure capturing device amplifies and outputs a forward voltage signal of the shock wave.
Preferably, the first piezoresistor in the piezoresistor type high anti-interference shock wave pressure capturing device is filled with a hardness material, and no signal is output when the voltage signal of the positive pressure shock wave is acquired.
The beneficial effects brought by adopting the technical scheme are that:
The invention uses two groups of piezoresistors at the same time by ingenious design, and the key point is that the inner side of one sensor is completely filled with a hardness material to prevent the resistance value change caused by downward deformation of the piezoresistors after the piezoresistors are contacted with impact waves, but the resistance value change caused by upward deformation of the piezoresistors caused by electromagnetic waves and negative pressure is not influenced, and the other sensor is internally provided with a cavity for normally receiving shock wave signals. The key is that the connection of one group of piezoresistor bridge circuit electrode needs to be forward connected, and the other group of electrodes needs to be reverse connected, because the propagation speed of electromagnetic wave is far faster than that of shock wave front, the piezoresistor bridge circuit electrode reaches the mounting point of the sensor when being almost exploded, and the signal of the piezoresistor bridge circuit electrode is directly overlapped on the signal output line of the sensor through an electromagnetic induction way on the sensor transmission cable. Based on the above, the output voltage caused by the micro-variation of the resistance value of the piezoresistor is processed by the signal processing module and then is balanced against each other, so that the aim of eliminating the influence on the accuracy of the final measured pressure value caused by the oscillation of the output pressure curve is fulfilled.
Drawings
FIG. 1 is a graph of a measured shock wave pressure signal of a conventional pressure sensor;
FIG. 2 is a schematic diagram of the internal construction of a split charging housing of a piezoresistive high anti-interference shock wave pressure capture device;
FIG. 3 is a schematic diagram of a varistor circuit;
FIG. 4 is a block diagram of a piezoresistive high-immunity shock wave pressure capture device;
FIG. 5 is a graph of measured shock wave pressure signals for a piezoresistive high anti-interference shock wave pressure capture device;
FIG. 6 is a flow chart of the signal processing of the piezoresistive high anti-interference shock wave pressure capture device.
Detailed Description
The technical scheme of the present invention will be described in detail below with reference to the accompanying drawings.
The invention discloses a piezoresistive high-anti-interference shock wave pressure capturing method and a piezoresistive high-anti-interference shock wave pressure capturing device.
Taking a 2kg TNT explosion as an example, the pressure of the ground shock wave at a position 3m away from the detonation point is measured by using a piezoresistive high anti-interference shock wave pressure capturing device, and the sensor parameters are shown in table 1.
1. Detonating the explosive from a detonation point;
2. the explosive detonating produces initial electromagnetic wave, optical radiation, thermal shock and the like to act on the force sensitive area of the sensor, wherein the force sensitive area is shown as a piezoresistor 1 and a piezoresistor 2 in figure 2, and the piezoresistor 1. Under the condition of no external force effect, the Wheatstone bridge circuits of the piezoresistor 1 and the piezoresistor 2 are in a balanced state, as shown in figure 3, no voltage signal is output at the moment, and after electromagnetic wave signals generated by explosion act on the piezoresistor, the resistance values of the resistors forming the Wheatstone bridge circuits change, and the piezoresistor 1 and the piezoresistor 2 bridge circuits lose balance to output voltage signals;
3. The signal amplifier amplifies the received forward and reverse voltage signals in the step 2, as shown in fig. 4, the signal amplifier is connected with the outgoing line of the sensor packaging shell, as shown in fig. 2, the inside of the sensor packaging shell is filled with a hardness material, and no strain is generated when the pressure sensitive resistor 1 receives positive pressure, so that the strain is generated when the pressure sensitive resistor 1 receives negative pressure, and the bridge circuit loses balance to output voltage signals;
4. After the negative pressure caused by electromagnetic waves, optical radiation, thermal shock and the like generated by explosion acts on the piezoresistor 1 and the piezoresistor 2, the two resistors generate the same resistance change, but the positive and negative voltage signals amplified by the step 3 counteract the strong negative pressure signals through the processing of the processor because the positive and negative voltage signals are positive and negative, so that only a micro-vibration curve is output at the stage, and the pressure curve is expressed as no negative pressure signal before the wave front of the actual shock wave reaches the surface of the sensor, as shown in fig. 5;
5. the explosion shock wave reaches the force sensitive areas of the two groups of sensors;
6. The sensor 1 is filled with hard materials, so that no strain is generated after the piezoresistor 1 receives an explosion shock wave signal, namely no resistance change can be generated, and no voltage signal is output;
7. the signal amplifier amplifies the voltage signal output by the sensor 2 in the step 6;
8. the signal processor processes and outputs the voltage signal in the step 7;
9. The signal processor outputs the actual pressure curve of the explosion shock wave, the pressure peak value of the free field shock wave is 308KPa, and when the impact wave peak value is finished, the output pressure signal value shows a zero-returning trend as shown in figure 5. The whole action process is shown in fig. 6;
Table 1 piezoresistive shock wave pressure sensor parameters
| Measuring range | 0~15MPa |
| Accuracy grade | 0.5%FS |
| Signal output | 0~5V |
| Power supply mode | ±12VDC |
| Compensating temperature range | 0°C~60°C |
| Use temperature range | -40°C~120°C |
| Zero temperature coefficient | 5×104/°C.FS |
| Temperature coefficient of sensitivity | 5×10—4/°C.FS |
Comparative example:
the ground shock wave pressure at 3m from the initiation point was measured with a 2kg TNT explosion using a conventional piezoresistive pressure sensor that was not subjected to parallel processing. The sensor parameters are shown in table 1.
1. Detonating the explosive from a detonation point;
2. the initial electromagnetic wave, optical radiation, thermal shock and the like generated by explosive detonation act on the force-sensitive area of the sensor, so that the piezoresistor is changed, and a voltage signal is output;
3. The signal amplifier amplifies the received forward and reverse voltage signals in the step 2;
4. the amplified voltage signal in step 3 shows a pressure curve as a distinct negative pressure signal before the actual shock wave front reaches the sensor surface, as shown in fig. 1;
5. the explosion shock wave reaches the force sensitive areas of the two groups of sensors;
6. the sensor receives the explosion shock wave signal, the piezoresistor generates strain, the resistance value is changed, and a voltage signal is output;
7. the signal amplifier amplifies the voltage signal output by the sensor in the step 6;
8. the signal processor processes and outputs the voltage signal in the step 7;
9. the signal processor outputs the actual pressure curve of the explosion shock wave, the pressure peak value of the free field shock wave is measured to be 290KPa, and as shown in figure 1, when the action of the shock wave peak value is finished, the output pressure signal value still shows that negative pressure exists.
It will be appreciated by those skilled in the art that embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. While preferred embodiments of the present application have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the application.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104406728A (en) * | 2014-11-25 | 2015-03-11 | 北京理工大学 | Manganin pressure sensor and device for measuring underwater explosion near-field impact wave pressure |
| CN107453754A (en) * | 2017-06-30 | 2017-12-08 | 南京理工大学 | Positive pressure of shock wave signal condition system |
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| NZ551819A (en) * | 2006-12-04 | 2009-03-31 | Zephyr Technology Ltd | Impact detection system |
| CN109163837B (en) * | 2018-09-19 | 2020-01-14 | 西安交通大学 | Micro-scale flexible composite type ultrahigh pressure sensor and manufacturing method thereof |
| RU207389U1 (en) * | 2021-08-12 | 2021-10-26 | Общество с ограниченной ответственностью "Специальная и медицинская техника" (ООО "Спецмедтехника") | Ballistic torso simulator for determining the impact resistance of body armor |
| CN115265884B (en) * | 2022-06-29 | 2026-02-17 | 南京理工大学 | Underwater explosion shock wave testing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104406728A (en) * | 2014-11-25 | 2015-03-11 | 北京理工大学 | Manganin pressure sensor and device for measuring underwater explosion near-field impact wave pressure |
| CN107453754A (en) * | 2017-06-30 | 2017-12-08 | 南京理工大学 | Positive pressure of shock wave signal condition system |
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