CN1162913C - 半导体存储器及其制造方法和驱动方法 - Google Patents

半导体存储器及其制造方法和驱动方法 Download PDF

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Publication number
CN1162913C
CN1162913C CNB011378654A CN01137865A CN1162913C CN 1162913 C CN1162913 C CN 1162913C CN B011378654 A CNB011378654 A CN B011378654A CN 01137865 A CN01137865 A CN 01137865A CN 1162913 C CN1162913 C CN 1162913C
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China
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source
male member
semiconductor memory
drain region
film
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Expired - Fee Related
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CNB011378654A
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English (en)
Chinese (zh)
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CN1363956A (zh
Inventor
三井田高
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INNOTECH CORP
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INNOTECH CORP
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Publication date
Priority claimed from JP2001114291A external-priority patent/JP3283872B1/ja
Priority claimed from JP2001123213A external-priority patent/JP3249811B1/ja
Priority claimed from JP2001143920A external-priority patent/JP3249812B1/ja
Application filed by INNOTECH CORP filed Critical INNOTECH CORP
Publication of CN1363956A publication Critical patent/CN1363956A/zh
Application granted granted Critical
Publication of CN1162913C publication Critical patent/CN1162913C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CNB011378654A 2000-11-09 2001-11-09 半导体存储器及其制造方法和驱动方法 Expired - Fee Related CN1162913C (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP342616/2000 2000-11-09
JP2000342616 2000-11-09
JP2001114291A JP3283872B1 (ja) 2001-04-12 2001-04-12 半導体記憶装置、その製造方法及び半導体記憶装置の駆動方法
JP114291/2001 2001-04-12
JP123213/2001 2001-04-20
JP2001123213A JP3249811B1 (ja) 2000-11-09 2001-04-20 半導体記憶装置、その製造方法及び半導体記憶装置の駆動方法
JP2001143920A JP3249812B1 (ja) 2001-05-14 2001-05-14 半導体記憶装置及びその製造方法
JP143920/2001 2001-05-14

Publications (2)

Publication Number Publication Date
CN1363956A CN1363956A (zh) 2002-08-14
CN1162913C true CN1162913C (zh) 2004-08-18

Family

ID=27481764

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB011378654A Expired - Fee Related CN1162913C (zh) 2000-11-09 2001-11-09 半导体存储器及其制造方法和驱动方法

Country Status (6)

Country Link
US (1) US6538925B2 (de)
EP (1) EP1205978B1 (de)
KR (1) KR100441788B1 (de)
CN (1) CN1162913C (de)
DE (1) DE60141670D1 (de)
TW (1) TW511280B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4191975B2 (ja) * 2001-11-01 2008-12-03 イノテック株式会社 トランジスタとそれを用いた半導体メモリ、およびトランジスタの製造方法
JP2004072060A (ja) 2001-11-22 2004-03-04 Innotech Corp トランジスタとそれを用いた半導体メモリ、およびトランジスタの駆動方法
US6795342B1 (en) * 2002-12-02 2004-09-21 Advanced Micro Devices, Inc. System for programming a non-volatile memory cell
JP2004214495A (ja) * 2003-01-07 2004-07-29 Innotech Corp トランジスタとそれを用いた半導体メモリ、および半導体メモリの製造方法
JP4557678B2 (ja) * 2004-02-13 2010-10-06 イノテック株式会社 半導体記憶装置
KR100598049B1 (ko) * 2004-10-28 2006-07-07 삼성전자주식회사 멀티 비트 비휘발성 메모리 셀을 포함하는 반도체 소자 및그 제조 방법
US7193900B2 (en) * 2005-01-18 2007-03-20 Mammen Thomas CACT-TG (CATT) low voltage NVM cells
TWI277205B (en) * 2005-10-05 2007-03-21 Promos Technologies Inc Flash memory structure and method for fabricating the same
KR100724560B1 (ko) * 2005-11-18 2007-06-04 삼성전자주식회사 결정질 반도체층을 갖는 반도체소자, 그의 제조방법 및그의 구동방법
US9159568B2 (en) 2006-02-04 2015-10-13 Cypress Semiconductor Corporation Method for fabricating memory cells having split charge storage nodes
WO2007089949A2 (en) * 2006-02-04 2007-08-09 Spansion Llc Memory cells having split charge storage nodes and methods for fabricating memory cells having split charge storage nodes
US8742486B2 (en) * 2006-02-04 2014-06-03 Spansion, Llc Flash memory cells having trenched storage elements
US7394702B2 (en) 2006-04-05 2008-07-01 Spansion Llc Methods for erasing and programming memory devices
US20070247924A1 (en) * 2006-04-06 2007-10-25 Wei Zheng Methods for erasing memory devices and multi-level programming memory device
CN103794610B (zh) * 2014-01-28 2016-08-17 北京芯盈速腾电子科技有限责任公司 非挥发性内存单元及其制造方法
CN106952925B (zh) * 2014-02-25 2020-03-17 北京芯盈速腾电子科技有限责任公司 一种低电场源极抹除非挥发性内存单元的制造方法
US20170345834A1 (en) * 2016-05-25 2017-11-30 Globalfoundries Inc. Soi memory device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4380057A (en) * 1980-10-27 1983-04-12 International Business Machines Corporation Electrically alterable double dense memory
EP0590319B1 (de) * 1992-10-02 1998-01-14 Matsushita Electric Industrial Co., Ltd. Nichtflüchtige Speicherzelle
DE19612676C2 (de) * 1996-03-29 2002-06-06 Infineon Technologies Ag Anordnung von Halbleiter-Speicherzellen mit zwei Floating-Gates in einem Zellenfeld und Verfahren zum Betrieb einer nichtflüchtigen Halbleiter-Speicherzelle
JP3253552B2 (ja) * 1996-05-31 2002-02-04 三洋電機株式会社 半導体装置の製造方法
US5949711A (en) 1996-09-26 1999-09-07 Waferscale Integration, Inc. Dual bit memory cell
US5780341A (en) * 1996-12-06 1998-07-14 Halo Lsi Design & Device Technology, Inc. Low voltage EEPROM/NVRAM transistors and making method
JP3070531B2 (ja) * 1997-06-27 2000-07-31 日本電気株式会社 不揮発性半導体記憶装置
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping

Also Published As

Publication number Publication date
TW511280B (en) 2002-11-21
KR100441788B1 (ko) 2004-07-27
KR20020036731A (ko) 2002-05-16
US20020054512A1 (en) 2002-05-09
CN1363956A (zh) 2002-08-14
US6538925B2 (en) 2003-03-25
DE60141670D1 (de) 2010-05-12
EP1205978A3 (de) 2003-06-25
EP1205978B1 (de) 2010-03-31
EP1205978A2 (de) 2002-05-15

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Granted publication date: 20040818

Termination date: 20121109