CN118695453B - A three-dimensional topological insulator spin plasma detection device - Google Patents
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- H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
- H05H1/0012—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry
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Abstract
本发明提供了一种三维拓扑绝缘体自旋等离子体探测设备，其包括：S1、在待检测样品表面制备耦合光栅；S2、通过太赫兹光持续照射耦合光栅，将探测偏振激光照射所述反射区后，得到携带反射区震荡信息的探测偏振激光；S3、对得到携带反射区震荡信息的探测偏振激光偏振分束后，测量各分离光束的光信号强度，当各分离光束的光信号强度不同时，待检测样品表面发生自旋波震荡。本发明使用太赫兹光激发特殊材料表面等离子体，并使用激光探测该等离子体振荡的自旋波特性的方法实现了基于磁光克尔效应的自旋波探测过程，此技术有效地形成传播型狄拉克等离激元，弥补了当前自旋波探测手段的空白，对于自旋等离激元的产生和利用具有重要意义。
The present invention provides a three-dimensional topological insulator spin plasma detection device, which includes: S1, preparing a coupling grating on the surface of a sample to be detected; S2, continuously irradiating the coupling grating with terahertz light, irradiating the reflection area with a detection polarized laser, and obtaining a detection polarized laser carrying the oscillation information of the reflection area; S3, after polarization beam splitting the detection polarized laser carrying the oscillation information of the reflection area, measuring the light signal intensity of each separated light beam, when the light signal intensity of each separated light beam is different, spin wave oscillation occurs on the surface of the sample to be detected. The present invention uses terahertz light to excite surface plasma of special materials, and uses a method of laser to detect the spin wave characteristics of the plasma oscillation to realize a spin wave detection process based on the magneto-optical Kerr effect. This technology effectively forms a propagation-type Dirac plasmon, fills the gap in the current spin wave detection means, and is of great significance for the generation and utilization of spin plasmons.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a three-dimensional topological insulator spin plasma detection device.
Background
Spin-plasmas (spin-plasmas) have received considerable attention in recent years as a collective oscillation phenomenon involving electron spin, its unique physical properties and potential application value. The generation of the phenomenon is caused by the collective motion of electron spins under the excitation of an external electromagnetic field, so that plasma fluctuation is caused, and the organic combination of the plasma oscillation and spin waves is realized. In the advanced technical fields of spin electron devices, quantum computation and the like, spin plasma has great application prospect.
In a plurality of material systems, graphene, topological insulator surface state and other materials become ideal platforms for researching spin plasmas due to special electronic structures and spin characteristics. There have been a number of literature reports on the spin plasma phenomena successfully observed in these material systems, as well as preliminary exploration of their potential applications. However, the current spin plasma observation technology has a certain limitation, and mainly shows the defects of dependence on excitation of localized shock waves and observation in situ by using absorption spectra.
Specifically, the existing spin plasma observation is mainly limited by exciting a limited shock wave, and the shock wave is limited in propagation in space, so that the application range of the spin plasma is limited. In addition, since spin waves decay rapidly in a non-excited region, the in-situ absorption spectroscopy observation method is difficult to capture the complete spin plasma signal, which clearly increases the difficulty of observation. More importantly, the non-propagation nature of spin shock waves makes its detection and utilization in practical applications a great challenge, which has greatly limited the development of spin plasma technology.
Disclosure of Invention
Therefore, the technical problem to be solved by the invention is to overcome the problem that spin plasma is difficult to observe due to limited propagation of shock waves in space in the prior art, and provide the three-dimensional topological insulator spin plasma detection equipment.
In order to solve the technical problems, the invention provides three-dimensional topological insulator spin plasma detection equipment, which comprises a bearing mechanism, a detection device and a detection device, wherein a sample to be detected is arranged in the bearing mechanism, the sample to be detected comprises a body, a grating area and a reflection area, the grating area and the reflection area are respectively arranged on the surface of the body, and the grating area is arranged as a coupling grating; the laser detection device comprises a laser emitter and a second beam splitter, wherein the second beam splitter divides a light source of the laser emitter into at least two light paths, an excitation mechanism is arranged between a sample to be detected and the laser source and comprises a terahertz emitter, one light path in the laser source reaches the coupling grating through the terahertz emitter, a detection mechanism comprises a polarizing plate, a first beam splitter, a polarizing beam splitter and a balance detector, the other light path in the laser source irradiates the reflecting area after passing through the polarizing plate, detection polarized laser carrying vibration information of the reflecting area is respectively input into two detection ends of the balance detector after passing through the polarizing beam splitter, the detection process comprises a step S1 of dividing a grating area and the reflecting area on the surface of the sample to be detected, preparing the coupling grating in the grating area, a step S2 of continuously irradiating the coupling grating through terahertz light, simultaneously irradiating the detection polarized laser to the reflecting area to obtain detection polarized light carrying vibration information, a step S3 of measuring the intensity of each polarized laser beam carrying vibration information, and respectively measuring the intensity of each polarized laser signal after the polarized light beams carrying vibration information are respectively separated, and when the optical signal intensities of the separated light beams are different, the spin wave oscillation is considered to occur on the surface of the sample to be detected.
In one embodiment of the present invention, in step S1, the sample to be detected is a three-dimensional topological insulator Bi 2Se3 thin film, the thickness of the thin film is not less than 300nm, the grating area is the same as the reflection area, and the period of the coupling grating is 400-700 nm.
In one embodiment of the invention, the step S1 is specifically to grow a three-dimensional topological insulator Bi 2Se3 film by molecular beam epitaxy, and then manufacture a coupling grating on the grating region by electron beam etching and electron beam evaporation.
In one embodiment of the invention, in the step S2, the terahertz light is guided to the coupling grating, dirac plasmons are excited to the grating region to form spin waves, and when the sample to be detected is subjected to spin wave oscillation, the spin waves are transferred to the reflection region by the grating region.
In one embodiment of the present invention, in step S2, the detection polarized laser is a pulsed laser with a wavelength of 750-800 nm, a pulse duration of less than 100 femtoseconds, and a repetition frequency of 75-85 mhz.
In one embodiment of the present invention, in step S2, the detection polarized laser light is sequentially subjected to fixed frequency modulation and noise filtering before being split.
In one embodiment of the present invention, the method further includes step S4 of generating a time delay between the terahertz light and the detection polarized laser by making an optical path difference between the terahertz light and the detection polarized laser, and calculating a time-varying relationship of the spin wave by the time delay when the sample to be detected is subjected to spin wave oscillation.
In one embodiment of the present invention, the detection mechanism further includes an optical chopper and a lock-in amplifier, wherein the optical chopper is disposed on a transmission light path between the second beam splitter and the polarizer, and the lock-in amplifier is disposed at an output end of the balance detector and is in signal connection with the optical chopper.
In one embodiment of the invention, the excitation mechanism further comprises at least one spherical mirror, and the detection mechanism further comprises a moving reflective assembly and at least one fixed mirror, the moving reflective assembly moving relative to at least one of the fixed mirrors.
In one embodiment of the present invention, the moving reflection assembly includes a sliding rail, a driver, and a moving mirror, and the moving mirror is connected to one end of the sliding rail to drive the moving mirror to move along the sliding rail.
In one embodiment of the present invention, the device further comprises a central control system, and the detection mechanism is connected with the central control system.
Compared with the prior art, the technical scheme of the invention has the following advantages:
The three-dimensional topological insulator spin plasma detection equipment adopts terahertz light to excite special material surface plasma, adopts laser to detect the spin wave characteristics of the plasma oscillation to realize the spin wave detection process based on magneto-optical Kerr effect, the technology of the invention can effectively excite electrons in the surface state of the material to be detected to form propagation type dirac plasmons, and detect spin oscillation waves correspondingly generated, thereby making up the blank of the current spin wave detection means and having important implications and guiding significance for the generation and utilization of spin plasmons.
Drawings
In order that the invention may be more readily understood, a more particular description of the invention will be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings.
FIG. 1 is a schematic diagram of the structure of a sample to be tested in a preferred embodiment of the present invention;
FIG. 2 is a schematic diagram of a three-dimensional topological insulator spin plasma detection apparatus in accordance with a preferred embodiment of the present invention;
FIG. 3 is a schematic diagram of the movable reflective component and fixed reflective mirror of FIG. 2.
The reference numerals of the specification are 100, a bearing mechanism, 110, a sample stage, 120, a sample to be detected, 121, a body, 122, a grating area, 123, a reflection area, 200, a laser emitting mechanism, 210, a laser emitter, 220, a first beam splitter, 300, an excitation mechanism, 310, a terahertz emitter, 320, a spherical reflector, 400, a detection mechanism, 410, a fixed reflector, 420, a movable reflecting component, 421, a sliding rail, 422, a driver, 423, a movable reflector, 430, an optical chopper, 440, a polaroid, 450, a second beam splitter, 460, a polarizing beam splitter, 470, a balance detector, 480, a lock-in amplifier, 490 and a computer.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific examples, which are not intended to be limiting, so that those skilled in the art will better understand the invention and practice it.
Examples
Referring to fig. 1 and 2, the present embodiment provides a three-dimensional topological insulator spin plasma detection apparatus for spin plasma detection of a three-dimensional topological insulator Bi 2Se3 film, comprising:
The sample to be detected 120 comprises a body 121, a grating area 122 and a reflection area 123, wherein the grating area 122 and the reflection area 123 are respectively arranged on the surface of the body 121, and the grating area 122 is arranged as a coupling grating;
The excitation mechanism 300 is arranged between the sample 120 to be detected and the laser light source, and comprises a terahertz transmitter 310, and one beam of light path in the laser light source reaches the coupling grating through the terahertz transmitter 310;
The detection mechanism 400 includes a polarizer 440, a first beam splitter 220, a polarizing beam splitter 460 and a balance detector 470, and after the other beam path of the laser source passes through the polarizer 440, the first beam splitter 220 irradiates the reflection area 123, so that the detection polarized laser carrying the oscillation information of the reflection area is split by the polarizing beam splitter 460 and then is respectively input to two detection ends of the balance detector 470.
The three-dimensional topological insulator spin plasma detection equipment disclosed by the embodiment uses terahertz light to excite the plasma on the surface of the Bi 2Se3 film of the three-dimensional topological insulator, and uses the laser to detect the spin wave characteristic of the plasma oscillation to realize the spin wave detection process based on the magneto-optical Kerr effect.
In this embodiment, the carrying mechanism 100 further includes a sample stage 110, and a three-dimensional topological insulator Bi2Se3 thin film is placed on the sample stage 110, specifically, the sample stage 110 in this embodiment is preferably a liquid helium cooling stage, which can be used to accommodate a sample to be tested with a size of 1cm×1cm, and other low-temperature sample stages 110 can be selected in other embodiments, which is not particularly limited in the present application. Further, the light-transmitting window of the sample stage 110 in this embodiment needs to be capable of transmitting 3-5THz (60-100 um) and 780nm short-wave infrared laser at the same time, so as to adapt to the subsequent detection process.
Referring to fig. 1, a sample 120 to be detected in this embodiment is obtained by molecular beam epitaxy, in order to ensure detection quality, the thickness of the sample needs to reach 300nm or more, further, in this embodiment, a grating region 122 and a reflection region 123 are disposed on the same surface of a body 121, where a coupling grating is fabricated on the grating region 122 by a method of combining electron beam etching (E-beam slit) and electron beam evaporation (E-beam evaporation), so as to provide a platform for exciting a propagating dirac plasmon with a specific oscillation period, and further, the period of the coupling grating in this embodiment is 400-700nm, where the width of any metal grating and the width of a gap each occupy half of the period, thereby generating a relatively uniform optical response and further improving the service stability thereof. At the same time, the uniform distribution of the metal grating and the voids helps to enhance the coupling of the electromagnetic field at the grating surface, thereby improving the efficiency of the optical device.
Referring to fig. 2, the present embodiment further includes a laser emission mechanism 200, where the laser emission mechanism 200 includes a laser emitter 210 and a second beam splitter 450, and the second beam splitter 450 splits the light source of the laser emitter 210 into at least two light paths, one of which is an excitation light path passing through the excitation mechanism 300, and the other of which is a detection light path passing through the excitation mechanism 300. Specifically, the laser transmitter 210 in the present embodiment is capable of generating a pulse laser having a wavelength of 780nm, a pulse duration of less than 100 femtoseconds, and a repetition rate of 80 MHz.
In this embodiment, the excitation mechanism 300 further includes two spherical mirrors 320, and the excitation light path passing through the terahertz transmitter 310 guides the light path transmission direction thereof through the two spherical mirrors 320, specifically, in this embodiment, one femtosecond pulse laser beam generated by the laser transmitter 210 enters the terahertz transmitter 310 to generate terahertz pulse radiation emitted in parallel, and then reaches the coupling grating in the sample 120 to be detected under the guiding action of the spherical mirrors 320, so as to realize the excitation of dirac plasmons in the surface state of the topological insulator. Specifically, the terahertz transmitter 310 in this embodiment operates on the principle that irradiation of a high-speed pulse laser generates electron-hole pairs in a semiconductor crystal (GaAs or InGaAs material grown at low temperature) inside thereof, and then these photoexcited carriers are accelerated by an applied external electric field, and physical separation of electrons and holes forms a macroscopic field opposite to the bias electric field. The rapid rise and decay of the electric field produces a transient current, thereby producing a pulse of electromagnetic radiation at the same or similar frequency in the terahertz frequency range.
Further, in this embodiment, when the terahertz pulse radiation reaches the coupling grating in the sample 120 to be detected, a specific electron self-selection arrangement is generated on the grating region 122 of the sample 120 to be detected, and the polarization state and intensity of the light reflected from the surface of the material with the specific electron spin arrangement are changed, so that the spin wave state of the surface of the material can be intuitively estimated by detecting the change through the magneto-optical kerr effect MOKE.
Referring to fig. 2, the detected polarized laser passing through the first beam splitter 220 is transmitted to the polarized beam splitter 460 and reaches the reflection area 123, at this time, the polarization state and intensity of the detected polarized laser are changed, so that it can be verified that spin waves exist on the surface of the material to be detected, then the detected polarized laser carrying the oscillation information of the reflection area reaches the polarized beam splitter 460, and different optical signals are separated by the polarized beam splitter 460, so that whether spin oscillation exists on the surface of the sample 120 to be detected and the relative intensity of the self-selected oscillation can be known by comparing the optical signal intensities of the separated optical beams.
Further, the detection mechanism 400 further comprises a movable reflective component 420 and at least one fixed mirror 410, wherein the movable reflective component 420 moves relative to the at least one fixed mirror 410. In this embodiment, based on the setting of the moving reflection assembly 420, the present application can reflect the information of the spin wave intensity, phase, etc. of the sample 120 to be detected by comparing the beam state changes under different positions and different excitation-detection time delay conditions. Specifically, referring to fig. 3, in this embodiment, the movable reflection assembly 420 includes a sliding rail 421, a driver 422, and a movable mirror 423, where the movable mirror 423 is connected to one end of the sliding rail 421 to drive the movable mirror 423 to move along the sliding rail 421, and in the transmission process of the detection light path, the micrometer control of the light path of the entire detection light path can be achieved through the displacement direction and the size of the movable reflection assembly 420. Further, in this embodiment, with the movement of the movable mirror 423, an optical path difference between the detection optical path and the excitation optical path can be generated in a micrometer-millimeter level, so as to generate a time delay in a femtosecond level. It should be noted that, during the actual operation, the actual position of the fixed mirror 410 for receiving the light reflected by the moving mirror 423 is adjusted accordingly with the moving mirror 423, so as to ensure that the subsequent light path is not affected.
Referring to fig. 2, the detecting mechanism 400 in this embodiment further includes an optical chopper 430 and a phase-locked amplifier 480, wherein the optical chopper 430 is disposed on a transmission optical path between the second beam splitter 450 and the polarizer 440, and the phase-locked amplifier 480 is disposed at an output end of the balance detector 470 and is in signal connection with the optical chopper 430. The optical chopper 430 generates a frequency modulation for the detection light path laser by periodically masking the light source, and the modulation frequency is synchronously input into the phase-locked amplifier 480. Further, after passing through the surface of the material, the detection laser is divided into two beams of light with perpendicular polarization states by the polarization beam splitter 460, and is simultaneously guided to two ends of the balance detector 470, the balance detector 470 can output a signal difference value of the two beams of light with orthogonal polarization, and the signal generated by the balance detector 470 is guided to the lock-in amplifier 480, so that noise is minimized in the process of extracting signal information of the modulation frequency of the optical chopper 430. Further, the present application further includes a central control system 490, the detection mechanism 400 is connected to the central control system 490, and the modulation signal generated by the optical chopper 430 is input to the central control system 490 from the phase-locked amplifier 480, and the optical signal reading is implemented, so as to complete a complete detection process. Wherein the driver 422 is also connected to the central control system 490 for adaptive adjustment of the reflective movement assembly, in particular the central control system 490 is preferably a computer.
The specific detection process of the embodiment comprises the following steps:
In the embodiment, the sample 120 to be detected is a three-dimensional topological insulator Bi 2Se3 film, the thickness of the Bi 2Se3 film is not less than 300nm, the areas of the grating area 122 and the reflection area 123 are the same, and the coupling grating period is 400-700 nm. Further, in the above process, a three-dimensional topological insulator Bi 2Se3 film is grown by molecular beam epitaxy, and then a coupling grating is fabricated on the grating region 122 by electron beam etching and electron beam evaporation.
And S2, continuously irradiating the coupling grating through terahertz light, and simultaneously irradiating the reflection area with detection polarized laser to obtain detection polarized laser carrying oscillation information of the reflection area, wherein in the embodiment, the detection polarized laser is pulse laser with the wavelength of 750-800 nm, the pulse duration is less than 100 femtoseconds, and the repetition frequency is 75-85 MHz. Specifically, the terahertz light is guided to the coupling grating, dirac plasmons are excited to the grating region 122 to form spin waves, and when the sample 120 to be detected is oscillated by the spin waves, the grating region 122 transmits the spin waves to the reflection region 123. Further, in step S2, before the beam splitting of the polarized detection laser, the polarized detection laser is sequentially subjected to fixed frequency modulation and noise filtering.
Step S3, after the mixed light beam is polarized and split, the optical signal intensity of each split light beam is measured respectively,
When the optical signal intensities of the separated light beams are the same, the surface of the sample 120 to be detected is considered to have no spin wave oscillation;
when the optical signal intensities of the separated light beams are different, the surface of the sample 120 to be detected is considered to generate spin wave oscillation;
the embodiment further includes step S4, by manufacturing an optical path difference between the terahertz light and the detection polarized laser, generating a time delay between the terahertz light and the detection polarized laser, and calculating a time-varying relationship of the spin wave according to the time delay when the sample 120 to be detected is subjected to spin-wave oscillation. In addition, the irradiation site of the probe beam can be controlled by moving the reflecting member 420, thereby generating an intensity map of the spin wave under a specific time delay state.
In summary, the three-dimensional topological insulator spin plasma detection device of the invention uses terahertz light to excite special material surface plasma, and uses laser to detect the spin wave characteristics of the plasma oscillation to realize the spin wave detection process based on magneto-optical Kerr effect, the technology of the invention can effectively excite electrons in the surface state of the material to be detected to form propagation type dirac plasmons, and detect spin oscillation waves correspondingly generated, thereby making up the blank of the current spin wave detection means and having important implications and guiding significance for the generation and utilization of spin plasmons.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations and modifications of the present invention will be apparent to those of ordinary skill in the art in light of the foregoing description. It is not necessary here nor is it exhaustive of all embodiments. And obvious variations or modifications thereof are contemplated as falling within the scope of the present invention.
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| CN114624194B (en) * | 2022-01-30 | 2025-04-11 | 首都师范大学 | Terahertz imaging method and imaging system based on gas plasma dynamic aperture |
| CN115839929B (en) * | 2022-11-01 | 2025-12-19 | 中国人民解放军国防科技大学 | Magneto-optical polarization imaging measurement system with high space-time resolution |
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| CN118089932A (en) * | 2024-04-02 | 2024-05-28 | 中国工程物理研究院电子工程研究所 | Ultra-wideband terahertz pulse detector and detection system |
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| CN101776575A (en) * | 2010-02-03 | 2010-07-14 | 中国科学院半导体研究所 | System for measuring linear and non-linear magneto-optical Kerr rotation |
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