CN1226747C - 包含显现强磁性隧道效应的存储元件的磁性存储装置 - Google Patents

包含显现强磁性隧道效应的存储元件的磁性存储装置 Download PDF

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Publication number
CN1226747C
CN1226747C CNB011378751A CN01137875A CN1226747C CN 1226747 C CN1226747 C CN 1226747C CN B011378751 A CNB011378751 A CN B011378751A CN 01137875 A CN01137875 A CN 01137875A CN 1226747 C CN1226747 C CN 1226747C
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China
Prior art keywords
bit line
magnetosphere
memory element
storage device
magnetic storage
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB011378751A
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English (en)
Chinese (zh)
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CN1353422A (zh
Inventor
山田光一
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Publication date
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Publication of CN1353422A publication Critical patent/CN1353422A/zh
Application granted granted Critical
Publication of CN1226747C publication Critical patent/CN1226747C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
CNB011378751A 2000-11-09 2001-11-09 包含显现强磁性隧道效应的存储元件的磁性存储装置 Expired - Fee Related CN1226747C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP341489/00 2000-11-09
JP2000341489 2000-11-09
JP2000399990 2000-12-28
JP399990/00 2000-12-28

Publications (2)

Publication Number Publication Date
CN1353422A CN1353422A (zh) 2002-06-12
CN1226747C true CN1226747C (zh) 2005-11-09

Family

ID=26603635

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB011378751A Expired - Fee Related CN1226747C (zh) 2000-11-09 2001-11-09 包含显现强磁性隧道效应的存储元件的磁性存储装置

Country Status (5)

Country Link
US (1) US6549455B2 (fr)
EP (1) EP1205937A3 (fr)
KR (1) KR100447769B1 (fr)
CN (1) CN1226747C (fr)
TW (1) TW584976B (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100451096B1 (ko) * 2000-09-19 2004-10-02 엔이씨 일렉트로닉스 가부시키가이샤 자기메모리셀어레이를 갖는 비휘발성 반도체메모리장치
JP4731041B2 (ja) 2001-05-16 2011-07-20 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP2003151260A (ja) * 2001-11-13 2003-05-23 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6795336B2 (en) * 2001-12-07 2004-09-21 Hynix Semiconductor Inc. Magnetic random access memory
JP3778100B2 (ja) * 2002-02-08 2006-05-24 ソニー株式会社 強磁性トンネル接合素子を用いた磁気記憶装置
JP4047615B2 (ja) * 2002-04-03 2008-02-13 株式会社ルネサステクノロジ 磁気記憶装置
JP2003303942A (ja) * 2002-04-12 2003-10-24 Mitsubishi Electric Corp 半導体記憶装置
KR100505104B1 (ko) * 2002-04-30 2005-07-29 삼성전자주식회사 자기 램 셀들, 그 구조체들 및 그 구동방법
JP2004013961A (ja) * 2002-06-04 2004-01-15 Mitsubishi Electric Corp 薄膜磁性体記憶装置
US6801451B2 (en) * 2002-09-03 2004-10-05 Hewlett-Packard Development Company, L.P. Magnetic memory devices having multiple bits per memory cell
JP4399211B2 (ja) * 2002-12-21 2010-01-13 株式会社ハイニックスセミコンダクター バイオセンサー
JP4294307B2 (ja) * 2002-12-26 2009-07-08 株式会社ルネサステクノロジ 不揮発性記憶装置
US6714442B1 (en) * 2003-01-17 2004-03-30 Motorola, Inc. MRAM architecture with a grounded write bit line and electrically isolated read bit line
JP4283011B2 (ja) * 2003-03-13 2009-06-24 Ｔｄｋ株式会社 磁気メモリデバイスおよびその読出方法
JP4365604B2 (ja) 2003-03-24 2009-11-18 Ｔｄｋ株式会社 磁気メモリデバイスおよびセンスアンプ回路、ならびに磁気メモリデバイスの読出方法
US6888771B2 (en) * 2003-05-09 2005-05-03 Micron Technology, Inc. Skewed sense AMP for variable resistance memory sensing
JP4646636B2 (ja) * 2004-02-20 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
JP2006031795A (ja) * 2004-07-14 2006-02-02 Renesas Technology Corp 不揮発性半導体記憶装置
US7339813B2 (en) * 2004-09-30 2008-03-04 Sharp Laboratories Of America, Inc. Complementary output resistive memory cell
US7292467B2 (en) * 2005-04-22 2007-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic random access memory device
US7474569B2 (en) * 2006-05-25 2009-01-06 Honeywell International Inc. Two-element magnetic memory cell
JP2010177624A (ja) * 2009-02-02 2010-08-12 Toshiba Corp 半導体記憶装置
US8547736B2 (en) 2010-08-03 2013-10-01 Qualcomm Incorporated Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
US9299410B2 (en) * 2013-09-04 2016-03-29 Shintaro SAKAI Reading magnetic memory based on regions within a cell array
JP6628053B2 (ja) * 2015-03-27 2020-01-08 パナソニックＩｐマネジメント株式会社 半導体記憶装置の書き換え方法
JP2019164848A (ja) * 2018-03-19 2019-09-26 東芝メモリ株式会社 磁気記憶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2060835A1 (fr) * 1991-02-11 1992-08-12 Romney R. Katti Memoire vive analogique rapide remanente en circuit integre
US5343422A (en) * 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect
JPH0863962A (ja) 1994-08-29 1996-03-08 Sanyo Electric Co Ltd 記憶装置及び半導体記憶装置
JPH09293387A (ja) 1996-02-29 1997-11-11 Sanyo Electric Co Ltd 半導体メモリ
US5946227A (en) * 1998-07-20 1999-08-31 Motorola, Inc. Magnetoresistive random access memory with shared word and digit lines
US6111781A (en) * 1998-08-03 2000-08-29 Motorola, Inc. Magnetic random access memory array divided into a plurality of memory banks

Also Published As

Publication number Publication date
EP1205937A3 (fr) 2003-04-09
KR20020042754A (ko) 2002-06-07
EP1205937A2 (fr) 2002-05-15
US20020054500A1 (en) 2002-05-09
CN1353422A (zh) 2002-06-12
KR100447769B1 (ko) 2004-09-08
TW584976B (en) 2004-04-21
US6549455B2 (en) 2003-04-15

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Granted publication date: 20051109

Termination date: 20091209