CN1280708A - 利用喷墨印刷技术制造有机半导体器件的方法及器件和利用该器件的系统 - Google Patents

利用喷墨印刷技术制造有机半导体器件的方法及器件和利用该器件的系统 Download PDF

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CN1280708A
CN1280708A CN98811747A CN98811747A CN1280708A CN 1280708 A CN1280708 A CN 1280708A CN 98811747 A CN98811747 A CN 98811747A CN 98811747 A CN98811747 A CN 98811747A CN 1280708 A CN1280708 A CN 1280708A
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conjugated organic
electrode
buffer layer
conjugated
deposit
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Pending
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CN98811747A
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Chinese (zh)
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杨洋
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University of California, San Diego
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University of California, San Diego
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/098—Applying pastes or inks, e.g. screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/221—Static displays, e.g. displaying permanent logos
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
    • H10K85/6565—Oxadiazole compounds

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
CN98811747A 1997-10-17 1998-10-14 利用喷墨印刷技术制造有机半导体器件的方法及器件和利用该器件的系统 Pending CN1280708A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US6229497P 1997-10-17 1997-10-17
US7270998P 1998-01-27 1998-01-27
US60/072,709 1998-01-27
US60/062,294 1998-01-27

Publications (1)

Publication Number Publication Date
CN1280708A true CN1280708A (zh) 2001-01-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN98811747A Pending CN1280708A (zh) 1997-10-17 1998-10-14 利用喷墨印刷技术制造有机半导体器件的方法及器件和利用该器件的系统

Country Status (7)

Country Link
EP (1) EP1029369A4 (fr)
JP (1) JP2001521269A (fr)
KR (1) KR20010031169A (fr)
CN (1) CN1280708A (fr)
AU (1) AU725148B2 (fr)
CA (1) CA2306948C (fr)
WO (1) WO1999021233A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100533812C (zh) * 2002-08-06 2009-08-26 默克专利股份公司 有机发光二极管及其制造方法
CN115843206A (zh) * 2022-12-13 2023-03-24 北京中科纳通电子技术有限公司 一种钙钛矿基光电探测器阵列及全印刷制备方法

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TW512543B (en) 1999-06-28 2002-12-01 Semiconductor Energy Lab Method of manufacturing an electro-optical device
DE19937724C1 (de) * 1999-08-10 2000-12-07 Bosch Gmbh Robert Lichtemittierende Matrixanzeige sowie Verfahren zur Herstellung einer lichtemittierenden Matrixanzeige
TW480722B (en) 1999-10-12 2002-03-21 Semiconductor Energy Lab Manufacturing method of electro-optical device
TW468283B (en) 1999-10-12 2001-12-11 Semiconductor Energy Lab EL display device and a method of manufacturing the same
TW471011B (en) * 1999-10-13 2002-01-01 Semiconductor Energy Lab Thin film forming apparatus
US6294398B1 (en) * 1999-11-23 2001-09-25 The Trustees Of Princeton University Method for patterning devices
JP4827294B2 (ja) * 1999-11-29 2011-11-30 株式会社半導体エネルギー研究所 成膜装置及び発光装置の作製方法
BR0016661B1 (pt) 1999-12-21 2013-11-26 Métodos para formação de um dispositivo eletrônico, dispositivo eletrônico e dispositivo de exibição
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DE10151440C1 (de) 2001-10-18 2003-02-06 Siemens Ag Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung
DE10160732A1 (de) 2001-12-11 2003-06-26 Siemens Ag Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu
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DE50306683D1 (de) 2002-08-23 2007-04-12 Polyic Gmbh & Co Kg Organisches bauelement zum überspannungsschutz und dazugehörige schaltung
US7098060B2 (en) 2002-09-06 2006-08-29 E.I. Du Pont De Nemours And Company Methods for producing full-color organic electroluminescent devices
DE10253154A1 (de) 2002-11-14 2004-05-27 Siemens Ag Messgerät zur Bestimmung eines Analyten in einer Flüssigkeitsprobe
US7442954B2 (en) 2002-11-19 2008-10-28 Polyic Gmbh & Co. Kg Organic electronic component comprising a patterned, semi-conducting functional layer and a method for producing said component
DE10302149A1 (de) 2003-01-21 2005-08-25 Siemens Ag Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik
US7297621B2 (en) 2003-04-15 2007-11-20 California Institute Of Technology Flexible carbon-based ohmic contacts for organic transistors
CN1791656A (zh) 2003-05-21 2006-06-21 陶氏环球技术公司 粘度调节剂和发光化合物的共混物
DE10323889A1 (de) * 2003-05-27 2004-12-16 Ehrfeld Mikrotechnik Ag Wälzlager mit Polymerelektronik
DE10339036A1 (de) 2003-08-25 2005-03-31 Siemens Ag Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu
DE10340644B4 (de) 2003-09-03 2010-10-07 Polyic Gmbh & Co. Kg Mechanische Steuerelemente für organische Polymerelektronik
JP2007505487A (ja) 2003-09-09 2007-03-08 シーエスジー ソーラー アクチェンゲゼルシャフト 有機樹脂材料に開口部を形成する方法の改良
JP2007505486A (ja) 2003-09-09 2007-03-08 シーエスジー ソーラー アクチェンゲゼルシャフト リフローによるマスクの調整
US7446051B2 (en) 2003-09-09 2008-11-04 Csg Solar Ag Method of etching silicon
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KR101320808B1 (ko) * 2006-02-12 2013-10-21 박순영 시프트 레지스터로 제어되는 선형 디스플레이 모듈
KR100858223B1 (ko) * 2007-05-21 2008-09-10 연세대학교 산학협력단 자가정렬된 반도체 나노와이어 박막 트랜지스터 및 그 제조 방법
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Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN100533812C (zh) * 2002-08-06 2009-08-26 默克专利股份公司 有机发光二极管及其制造方法
CN115843206A (zh) * 2022-12-13 2023-03-24 北京中科纳通电子技术有限公司 一种钙钛矿基光电探测器阵列及全印刷制备方法

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CA2306948C (fr) 2004-09-07
AU1084699A (en) 1999-05-10
CA2306948A1 (fr) 1999-04-29
EP1029369A1 (fr) 2000-08-23
KR20010031169A (ko) 2001-04-16
WO1999021233A1 (fr) 1999-04-29
JP2001521269A (ja) 2001-11-06
AU725148B2 (en) 2000-10-05
EP1029369A4 (fr) 2002-04-03

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