CN1908738A - 有源矩阵式液晶电光器件以及具备该器件的摄象机 - Google Patents

有源矩阵式液晶电光器件以及具备该器件的摄象机 Download PDF

Info

Publication number: CN1908738A
Authority: CN; China
Prior art keywords: tft; liquid crystal; forms; region; interlayer dielectric
Prior art date: 1991-08-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

CNA2006100934473A

Other languages

English (en)

Chinese (zh)

Inventor

山崎舜平

间濑晃

广木正明

竹村保彦

张宏勇

鱼地秀贵

根本英树

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Semiconductor Energy Laboratory Co Ltd

Original Assignee

Semiconductor Energy Laboratory Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-08-23

Filing date

1992-08-22

Publication date

2007-02-07

Family has litigation

First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17010420&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN1908738(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

1992-08-22 Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd

2007-02-07 Publication of CN1908738A publication Critical patent/CN1908738A/zh

Status Pending legal-status Critical Current

Links

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Images

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

Landscapes

Liquid Crystal (AREA)
Thin Film Transistor (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

CNA2006100934473A 1991-08-23 1992-08-22 有源矩阵式液晶电光器件以及具备该器件的摄象机 Pending CN1908738A (zh)

Applications Claiming Priority (6)

Application Number	Priority Date	Filing Date	Title
JP23710091		1991-08-23
JP237100/1991		1991-08-23
JP340336/1991		1991-11-29
JP34194/1992		1992-01-24
JP38637/1992		1992-01-29
JP54322/1992		1992-02-05

Related Parent Applications (1)

Application Number	Title	Priority Date	Filing Date
CN200410088064.8A Division CN1603924B (zh)	1991-08-23	1992-08-22	有源矩阵式液晶电光器件以及具备该器件的摄象机

Publications (1)

Publication Number	Publication Date
CN1908738A true CN1908738A (zh)	2007-02-07

Family

ID=17010420

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CNA2006100934473A Pending CN1908738A (zh)	1991-08-23	1992-08-22	有源矩阵式液晶电光器件以及具备该器件的摄象机

Country Status (2)

Country	Link
JP (3)	JPH05267666A (ja)
CN (1)	CN1908738A (ja)

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EP0499979A3 (en)	1991-02-16	1993-06-09	Semiconductor Energy Laboratory Co., Ltd.	Electro-optical device
JP2540688B2 (ja) *	1991-08-23	1996-10-09	株式会社半導体エネルギー研究所	半導体装置とその作製方法
JP2794678B2 (ja)	1991-08-26	1998-09-10	株式会社半導体エネルギー研究所	絶縁ゲイト型半導体装置およびその作製方法
JP2845303B2 (ja)	1991-08-23	1999-01-13	株式会社半導体エネルギー研究所	半導体装置とその作製方法
US5485019A (en)	1992-02-05	1996-01-16	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for forming the same
JP3587537B2 (ja)	1992-12-09	2004-11-10	株式会社半導体エネルギー研究所	半導体装置
US6544825B1 (en)	1992-12-26	2003-04-08	Semiconductor Energy Laboratory Co., Ltd.	Method of fabricating a MIS transistor
DE4435461C2 (de) *	1993-10-06	2001-09-20	Micron Technology Inc N D Ges	Dünnfilmtransistor und dessen Herstellverfahren
KR100291971B1 (ko)	1993-10-26	2001-10-24	야마자끼 순페이	기판처리장치및방법과박막반도체디바이스제조방법
US7081938B1 (en)	1993-12-03	2006-07-25	Semiconductor Energy Laboratory Co., Ltd.	Electro-optical device and method for manufacturing the same
JP2873660B2 (ja)	1994-01-08	1999-03-24	株式会社半導体エネルギー研究所	半導体集積回路の作製方法
JP3312083B2 (ja)	1994-06-13	2002-08-05	株式会社半導体エネルギー研究所	表示装置
TW344901B (en) *	1995-02-15	1998-11-11	Handotai Energy Kenkyusho Kk	Active matrix display device
TW345654B (en)	1995-02-15	1998-11-21	Handotai Energy Kenkyusho Kk	Active matrix display device
US5757456A (en)	1995-03-10	1998-05-26	Semiconductor Energy Laboratory Co., Ltd.	Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
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- 1992-08-22 CN CNA2006100934473A patent/CN1908738A/zh active Pending
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JP2585158B2 (ja)	1997-02-26
JPH11163369A (ja)	1999-06-18
JP3109051B2 (ja)	2000-11-13
JPH05267666A (ja)	1993-10-15
JPH05267667A (ja)	1993-10-15

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DE102013022607B4 (de)	2024-05-08	Anzeigevorrichtung
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US8088652B2 (en)	2012-01-03	Electron device using oxide semiconductor and method of manufacturing the same
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CN1908738A - 有源矩阵式液晶电光器件以及具备该器件的摄象机 - Google Patents

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