CN1952667A - 探针片粘贴架、探针卡、半导体检测装置及其制造方法 - Google Patents

探针片粘贴架、探针卡、半导体检测装置及其制造方法 Download PDF

Info

Publication number: CN1952667A
Authority: CN; China
Prior art keywords: mentioned; probe; contact terminal; wafer; electrode
Prior art date: 2005-10-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

CNA2006101595607A

Other languages

English (en)

Chinese (zh)

Inventor

春日部进

庄司照雄

长谷部昭男

出口善宣

成康则

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Renesas Technology Corp

Original Assignee

Renesas Technology Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2005-10-05

Filing date

2006-09-27

Publication date

2007-04-25

2006-09-27 Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp

2007-04-25 Publication of CN1952667A publication Critical patent/CN1952667A/zh

Status Pending legal-status Critical Current

Links

239000000523 sample Substances 0.000 title claims abstract description 357
239000004065 semiconductor Substances 0.000 title claims description 195
239000000853 adhesive Substances 0.000 title claims description 81
230000001070 adhesive effect Effects 0.000 title claims description 81
238000004519 manufacturing process Methods 0.000 title claims description 68
238000000034 method Methods 0.000 title claims description 57
238000007689 inspection Methods 0.000 title description 12
239000000758 substrate Substances 0.000 claims abstract description 56
229910052751 metal Inorganic materials 0.000 claims description 34
239000002184 metal Substances 0.000 claims description 34
238000005530 etching Methods 0.000 claims description 32
229910045601 alloy Inorganic materials 0.000 claims description 10
239000000956 alloy Substances 0.000 claims description 10
238000003825 pressing Methods 0.000 abstract description 7
238000001514 detection method Methods 0.000 description 42
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 40
239000000463 material Substances 0.000 description 39
230000015572 biosynthetic process Effects 0.000 description 36
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
229910052710 silicon Inorganic materials 0.000 description 28
239000010703 silicon Substances 0.000 description 28
229920001721 polyimide Polymers 0.000 description 27
229920002120 photoresistant polymer Polymers 0.000 description 25
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 24
239000000377 silicon dioxide Substances 0.000 description 20
235000012239 silicon dioxide Nutrition 0.000 description 20
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 19
229910052802 copper Inorganic materials 0.000 description 19
239000010949 copper Substances 0.000 description 19
238000007747 plating Methods 0.000 description 17
230000008569 process Effects 0.000 description 17
238000005516 engineering process Methods 0.000 description 16
239000011347 resin Substances 0.000 description 15
229920005989 resin Polymers 0.000 description 15
238000012360 testing method Methods 0.000 description 15
229910052804 chromium Inorganic materials 0.000 description 14
239000011651 chromium Substances 0.000 description 14
229910052759 nickel Inorganic materials 0.000 description 12
239000000047 product Substances 0.000 description 12
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 10
230000032683 aging Effects 0.000 description 10
238000005520 cutting process Methods 0.000 description 10
KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
238000000151 deposition Methods 0.000 description 8
238000004544 sputter deposition Methods 0.000 description 8
DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 7
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 7
229960002050 hydrofluoric acid Drugs 0.000 description 7
239000002585 base Substances 0.000 description 6
238000012545 processing Methods 0.000 description 6
239000004593 Epoxy Substances 0.000 description 5
239000004411 aluminium Substances 0.000 description 5
229910052782 aluminium Inorganic materials 0.000 description 5
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
BCAARMUWIRURQS-UHFFFAOYSA-N dicalcium;oxocalcium;silicate Chemical compound [Ca+2].[Ca+2].[Ca]=O.[O-][Si]([O-])([O-])[O-] BCAARMUWIRURQS-UHFFFAOYSA-N 0.000 description 5
238000001312 dry etching Methods 0.000 description 5
239000012467 final product Substances 0.000 description 5
229910001374 Invar Inorganic materials 0.000 description 4
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
229910000990 Ni alloy Inorganic materials 0.000 description 4
150000001844 chromium Chemical class 0.000 description 4
239000011248 coating agent Substances 0.000 description 4
238000000576 coating method Methods 0.000 description 4
238000005553 drilling Methods 0.000 description 4
229910052703 rhodium Inorganic materials 0.000 description 4
239000010948 rhodium Substances 0.000 description 4
MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 4
239000004642 Polyimide Substances 0.000 description 3
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
239000003513 alkali Substances 0.000 description 3
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
239000013068 control sample Substances 0.000 description 3
238000000280 densification Methods 0.000 description 3
238000010586 diagram Methods 0.000 description 3
230000000694 effects Effects 0.000 description 3
239000007772 electrode material Substances 0.000 description 3
238000009434 installation Methods 0.000 description 3
229910052760 oxygen Inorganic materials 0.000 description 3
239000001301 oxygen Substances 0.000 description 3
239000012858 resilient material Substances 0.000 description 3
XEEYBQQBJWHFJM-NJFSPNSNSA-N Iron-58 Chemical compound [58Fe] XEEYBQQBJWHFJM-NJFSPNSNSA-N 0.000 description 2
230000008878 coupling Effects 0.000 description 2
238000010168 coupling process Methods 0.000 description 2
238000005859 coupling reaction Methods 0.000 description 2
238000013461 design Methods 0.000 description 2
239000011521 glass Substances 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
239000004615 ingredient Substances 0.000 description 2
229910052742 iron Inorganic materials 0.000 description 2
238000000608 laser ablation Methods 0.000 description 2
230000007246 mechanism Effects 0.000 description 2
239000000203 mixture Substances 0.000 description 2
238000007789 sealing Methods 0.000 description 2
229920002379 silicone rubber Polymers 0.000 description 2
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
229910052721 tungsten Inorganic materials 0.000 description 2
239000010937 tungsten Substances 0.000 description 2
229940095676 wafer product Drugs 0.000 description 2
239000011324 bead Substances 0.000 description 1
230000008901 benefit Effects 0.000 description 1
239000004020 conductor Substances 0.000 description 1
239000000470 constituent Substances 0.000 description 1
238000010276 construction Methods 0.000 description 1
238000001816 cooling Methods 0.000 description 1
230000002950 deficient Effects 0.000 description 1
238000011161 development Methods 0.000 description 1
230000018109 developmental process Effects 0.000 description 1
238000006073 displacement reaction Methods 0.000 description 1
238000005538 encapsulation Methods 0.000 description 1
229960002089 ferrous chloride Drugs 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000010931 gold Substances 0.000 description 1
239000012535 impurity Substances 0.000 description 1
230000005764 inhibitory process Effects 0.000 description 1
230000010354 integration Effects 0.000 description 1
NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 1
239000007788 liquid Substances 0.000 description 1
238000012423 maintenance Methods 0.000 description 1
239000012528 membrane Substances 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000004806 packaging method and process Methods 0.000 description 1
238000010422 painting Methods 0.000 description 1
238000011056 performance test Methods 0.000 description 1
229920001296 polysiloxane Polymers 0.000 description 1
229920002635 polyurethane Polymers 0.000 description 1
239000004814 polyurethane Substances 0.000 description 1
239000012286 potassium permanganate Substances 0.000 description 1
238000004080 punching Methods 0.000 description 1
238000004904 shortening Methods 0.000 description 1
229910000679 solder Inorganic materials 0.000 description 1
239000007921 spray Substances 0.000 description 1
230000006641 stabilisation Effects 0.000 description 1
238000011105 stabilization Methods 0.000 description 1
239000010935 stainless steel Substances 0.000 description 1
229910001220 stainless steel Inorganic materials 0.000 description 1
230000035882 stress Effects 0.000 description 1

Images

Classifications

- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/0735—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card arranged on a flexible frame or film
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Testing Or Measuring Of Semiconductors Or The Like (AREA)
Measuring Leads Or Probes (AREA)
Testing Of Individual Semiconductor Devices (AREA)

CNA2006101595607A 2005-10-05 2006-09-27 探针片粘贴架、探针卡、半导体检测装置及其制造方法 Pending CN1952667A (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP291886/2005		2005-10-05
JP2005291886A JP2007101373A (ja)	2005-10-05	2005-10-05	プローブシート接着ホルダ、プローブカード、半導体検査装置および半導体装置の製造方法

Publications (1)

Publication Number	Publication Date
CN1952667A true CN1952667A (zh)	2007-04-25

Family

ID=38003119

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CNA2006101595607A Pending CN1952667A (zh)	2005-10-05	2006-09-27	探针片粘贴架、探针卡、半导体检测装置及其制造方法

Country Status (5)

Country	Link
US (1)	US7423439B2 (2)
JP (1)	JP2007101373A (2)
KR (1)	KR100838434B1 (2)
CN (1)	CN1952667A (2)
TW (1)	TW200730828A (2)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN100498344C (zh) *	2006-10-20	2009-06-10	台湾积体电路制造股份有限公司	用于测试不同的半导体装置的通用系统
CN103901240A (zh) *	2014-03-24	2014-07-02	上海华力微电子有限公司	探针卡识别芯片安装方法
TWI510788B (zh) *	2014-01-13	2015-12-01	Taiwan Elite Nano Technology Corp	探針結構及其製造方法
CN110720044A (zh) *	2017-06-02	2020-01-21	精炼金属股份有限公司	用于对构件进行电性触碰接触的接触模块和接触系统
CN110832960A (zh) *	2017-07-04	2020-02-21	株式会社富士	元件安装装置
CN116897289A (zh) *	2021-08-31	2023-10-17	信越工程株式会社	通电检查装置及通电检查方法

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2005136246A (ja) *	2003-10-31	2005-05-26	Renesas Technology Corp	半導体集積回路装置の製造方法
JP5005195B2 (ja) *	2005-07-13	2012-08-22	東京エレクトロン株式会社	プローブカード製造方法
JP2007101373A (ja) *	2005-10-05	2007-04-19	Renesas Technology Corp	プローブシート接着ホルダ、プローブカード、半導体検査装置および半導体装置の製造方法
JP4800007B2 (ja)	2005-11-11	2011-10-26	ルネサスエレクトロニクス株式会社	半導体集積回路装置の製造方法およびプローブカード
TWI276806B (en) *	2005-11-15	2007-03-21	Wintek Corp	Thin-film probe card
JP2008151573A (ja) *	2006-12-15	2008-07-03	Micronics Japan Co Ltd	電気的接続装置およびその製造方法
JP5065674B2 (ja) *	2006-12-28	2012-11-07	ルネサスエレクトロニクス株式会社	半導体集積回路装置の製造方法
JP2009204393A (ja) *	2008-02-27	2009-09-10	Renesas Technology Corp	プローブカード、プローブカードの製造方法、半導体検査装置および半導体装置の製造方法
KR101232691B1 (ko) *	2008-02-29	2013-02-13	니혼 하츠쵸 가부시키가이샤	배선기판 및 프로브 카드
JP5503189B2 (ja) *	2009-05-14	2014-05-28	東京エレクトロン株式会社	プローブカード
DE202009007039U1 (de)	2009-05-15	2010-10-14	Stabilo International Gmbh	Verschlusskappe
JP5381609B2 (ja) *	2009-10-20	2014-01-08	日本電産リード株式会社	検査用治具及び接触子
DE202010006061U1 (de) *	2010-04-23	2010-07-22	Helmut Fischer GmbH Institut für Elektronik und Messtechnik	Messsonde zur zerstörungsfreien Messung der Dicke dünner Schichten
TWI435083B (zh) *	2010-07-27	2014-04-21	Mpi Corp	Combination probe head for vertical probe card and its assembly alignment method
US8814601B1 (en)	2011-06-06	2014-08-26	Nuvotronics, Llc	Batch fabricated microconnectors
JP6040530B2 (ja) *	2012-01-17	2016-12-07	セイコーエプソン株式会社	ハンドラーおよび検査装置
US9685717B2 (en) *	2012-03-14	2017-06-20	R+D Sockets, Inc.	Apparatus and method for a conductive elastomer on a coaxial cable or a microcable to improve signal integrity probing
WO2015109208A2 (en)	2014-01-17	2015-07-23	Nuvotronics, Llc	Wafer scale test interface unit: low loss and high isolation devices and methods for high speed and high density mixed signal interconnects and contactors
US10003149B2 (en)	2014-10-25	2018-06-19	ComponentZee, LLC	Fluid pressure activated electrical contact devices and methods
US9577358B2 (en) *	2014-10-25	2017-02-21	ComponentZee, LLC	Fluid pressure activated electrical contact devices and methods
JP6626254B2 (ja) *	2015-02-03	2019-12-25	株式会社テセック	半導体デバイス測定方法
KR101726399B1 (ko) *	2016-03-17	2017-04-13	주식회사 오킨스전자	바텀 메탈 플레이트 범프를 포함하는 테스트 소켓 및 그 제조 방법
NL2021552B1 (en) *	2018-09-03	2020-04-30	Besi Netherlands Bv	Method and device for selective separating electronic components from a frame with electronic components
KR102062471B1 (ko) *	2018-12-26	2020-01-03	고기돈	Ｒｆ 칩 테스트를 위한 버티컬 프루브를 구비한 필름 타입 프루브 카드
JP1666045S (2)	2019-01-25	2020-08-17
WO2020191295A1 (en) *	2019-03-20	2020-09-24	Celadon Systems, Inc.	Portable probe card assembly
CN112649711B (zh) *	2019-10-12	2022-04-15	成都辰显光电有限公司	微发光二极管的检测装置及方法
US12052830B2 (en)	2021-12-06	2024-07-30	Advantest America, Inc.	Method and process for creating high-performance coax sockets
US20250237697A1 (en) *	2024-01-22	2025-07-24	Essai, Inc.	Systems and methods for tool-less, quick change elastomeric contact interfaces for integrated circuit testing

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4774462A (en) *	1984-06-11	1988-09-27	Black Thomas J	Automatic test system
US4696849A (en) *	1985-09-16	1987-09-29	The Dow Chemical Company	Process for preparing polyurethane-backed textiles
JP2539453B2 (ja)	1987-09-11	1996-10-02	株式会社日立製作所	半導体素子検査装置
US5012187A (en) *	1989-11-03	1991-04-30	Motorola, Inc.	Method for parallel testing of semiconductor devices
JP2966671B2 (ja)	1991-11-18	1999-10-25	東京エレクトロン株式会社	プローブカード
JP3502874B2 (ja)	1994-06-03	2004-03-02	株式会社ルネサステクノロジ	接続装置およびその製造方法
EP0707214A3 (en) *	1994-10-14	1997-04-16	Hughes Aircraft Co	Multiport membrane probe to test complete semiconductor plates
TW300954B (en) *	1995-07-14	1997-03-21	Tokyo Electron Co Ltd	The probe card used in prober
US5642054A (en) *	1995-08-08	1997-06-24	Hughes Aircraft Company	Active circuit multi-port membrane probe for full wafer testing
US5818246A (en) *	1996-05-07	1998-10-06	Zhong; George Guozhen	Automatic multi-probe PWB tester
JPH1038924A (ja)	1996-07-25	1998-02-13	Advantest Corp	プローブカード
JP3315339B2 (ja)	1997-05-09	2002-08-19	株式会社日立製作所	半導体素子の製造方法並びに半導体素子へのプロービング方法およびその装置
JPH11160356A (ja) *	1997-11-25	1999-06-18	Matsushita Electric Ind Co Ltd	ウェハ一括型測定検査用プローブカードおよびセラミック多層配線基板ならびにそれらの製造方法
JP2000150594A (ja) *	1998-11-05	2000-05-30	Hitachi Ltd	接続装置および押さえ部材付配線フィルムの製造方法並びに検査システムおよび半導体素子の製造方法
US6586955B2 (en) *	2000-03-13	2003-07-01	Tessera, Inc.	Methods and structures for electronic probing arrays
DE10039336C2 (de) *	2000-08-04	2003-12-11	Infineon Technologies Ag	Verfahren zum Testen von Halbleiterschaltungen und Testvorrichtung zur Durchführung des Verfahrens
US6690184B1 (en) *	2000-08-31	2004-02-10	Micron Technology, Inc.	Air socket for testing integrated circuits
TWI236723B (en) *	2002-10-02	2005-07-21	Renesas Tech Corp	Probe sheet, probe card, semiconductor inspection device, and manufacturing method for semiconductor device
JP4465995B2 (ja)	2003-07-02	2010-05-26	株式会社日立製作所	プローブシート、プローブカード、半導体検査装置および半導体装置の製造方法
JP2007101373A (ja) *	2005-10-05	2007-04-19	Renesas Technology Corp	プローブシート接着ホルダ、プローブカード、半導体検査装置および半導体装置の製造方法

2005
- 2005-10-05 JP JP2005291886A patent/JP2007101373A/ja not_active Withdrawn
2006
- 2006-09-25 TW TW095135413A patent/TW200730828A/zh not_active IP Right Cessation
- 2006-09-27 CN CNA2006101595607A patent/CN1952667A/zh active Pending
- 2006-09-28 KR KR1020060094797A patent/KR100838434B1/ko not_active Expired - Fee Related
- 2006-10-05 US US11/543,021 patent/US7423439B2/en not_active Expired - Fee Related

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN100498344C (zh) *	2006-10-20	2009-06-10	台湾积体电路制造股份有限公司	用于测试不同的半导体装置的通用系统
TWI510788B (zh) *	2014-01-13	2015-12-01	Taiwan Elite Nano Technology Corp	探針結構及其製造方法
CN103901240A (zh) *	2014-03-24	2014-07-02	上海华力微电子有限公司	探针卡识别芯片安装方法
CN103901240B (zh) *	2014-03-24	2017-05-24	上海华力微电子有限公司	探针卡识别芯片安装方法
CN110720044A (zh) *	2017-06-02	2020-01-21	精炼金属股份有限公司	用于对构件进行电性触碰接触的接触模块和接触系统
CN110832960A (zh) *	2017-07-04	2020-02-21	株式会社富士	元件安装装置
CN116897289A (zh) *	2021-08-31	2023-10-17	信越工程株式会社	通电检查装置及通电检查方法

Also Published As

Publication number	Publication date
TWI313752B (2)	2009-08-21
TW200730828A (en)	2007-08-16
JP2007101373A (ja)	2007-04-19
KR100838434B1 (ko)	2008-06-16
US20070103178A1 (en)	2007-05-10
KR20070038410A (ko)	2007-04-10
US7423439B2 (en)	2008-09-09

Legal Events

Date	Code	Title	Description
2007-04-25	C06	Publication
2007-04-25	PB01	Publication
2007-06-13	C10	Entry into substantive examination
2007-06-13	SE01	Entry into force of request for substantive examination
2011-01-26	C02	Deemed withdrawal of patent application after publication (patent law 2001)
2011-01-26	WD01	Invention patent application deemed withdrawn after publication	Open date: 20070425

Publication	Publication Date	Title
CN1952667A (zh)	2007-04-25	探针片粘贴架、探针卡、半导体检测装置及其制造方法
US7420380B2 (en)	2008-09-02	Probe card and semiconductor testing device using probe sheet or probe card semiconductor device producing method
KR100623544B1 (ko)	2006-09-18	프로우브 카드, 반도체 검사 장치 및 반도체 장치의 제조 방법
US5811982A (en)	1998-09-22	High density cantilevered probe for electronic devices
US6329827B1 (en)	2001-12-11	High density cantilevered probe for electronic devices
EP1097617B1 (en)	2005-07-20	Interconnect assembly for printed circuit boards and method of fabrication
US6722032B2 (en)	2004-04-20	Method of forming a structure for electronic devices contact locations
CN101069277B (zh)	2010-05-12	包括检测探针的探针卡制造方法
JPH04233480A (ja)	1992-08-21	電子デバイスの試験装置
KR100374732B1 (ko)	2003-05-12	반도체웨이퍼접촉시스템및반도체웨이퍼접촉방법
JP2006032593A (ja)	2006-02-02	プローブカセット、半導体検査装置および半導体装置の製造方法
JP2008504559A (ja)	2008-02-14	パターン化された導電層を有する基板
KR20000047438A (ko)	2000-07-25	반도체 시험 방법 및 반도체 시험 장치
CN102483438A (zh)	2012-05-30	基板检查装置以及基板检查装置中的对位方法
US20050179456A1 (en)	2005-08-18	High density cantilevered probe for electronic devices
KR100393452B1 (ko)	2003-08-02	반도체소자검사용 기판의 제조방법
KR20010021167A (ko)	2001-03-15	콘택터용 픽킹 및 배치 기구
JP2004144742A (ja)	2004-05-20	プローブシート、プローブカード、半導体検査装置および半導体装置の製造方法
JP2009098153A (ja)	2009-05-07	薄膜プローブの製造方法
US20030094962A1 (en)	2003-05-22	Dual plane probe card assembly and method of manufacture
JPH09115971A (ja)	1997-05-02	半導体装置の検査方法
KR20120110290A (ko)	2012-10-10	일체형 프로브 블록의 제조 방법 및 그 프로브 블록을 포함하는 전기신호 검사 장치
KR100815494B1 (ko)	2008-03-20	프로브 카드 및 그 제조 방법, 및 프로브 카드의 리페어방법
JP3057999B2 (ja)	2000-07-04	半導体チップ試験装置
KR20040105035A (ko)	2004-12-14	전자소자 검사용 전기적 접촉체