CN213242534U - AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of power device - Google Patents
AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of power device Download PDFInfo
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- CN213242534U CN213242534U CN202022825897.5U CN202022825897U CN213242534U CN 213242534 U CN213242534 U CN 213242534U CN 202022825897 U CN202022825897 U CN 202022825897U CN 213242534 U CN213242534 U CN 213242534U
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- heat dissipation
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- oxide film
- power device
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Abstract
本实用新型提供一种用于功率器件散热封装的AlSiC散热绝缘一体化基板，其包括AlSiC散热基板，所述AlSiC基板的表面设有氧化膜绝缘层，所述氧化膜绝缘层的表面设有导电膜，所述氧化膜绝缘层材质为AlSiC的氧化物。传统散热封装结构为金属基散热基板与绝缘陶瓷覆铜板焊接而成的多材料种类的多层结构，采用本实用新型的技术方案，减少了材料种类，也就减小了热失配，解决了传统封装结构中材料种类多和界面多的问题，减小材料热阻和界面热阻，提高整体结构散热能力，减少焊接工序，降低了生产成本，工艺流程简单，易于实现自动化生产。
The utility model provides an AlSiC heat dissipation and insulation integrated substrate for power device heat dissipation package, which comprises an AlSiC heat dissipation substrate, the surface of the AlSiC substrate is provided with an oxide film insulating layer, and the surface of the oxide film insulating layer is provided with a conductive layer The oxide film insulating layer is made of AlSiC oxide. The traditional heat dissipation package structure is a multi-material type multi-layer structure formed by welding a metal base heat dissipation substrate and an insulating ceramic copper clad plate. The technical scheme of the present utility model reduces the material types, and also reduces the thermal mismatch, and solves the problem. In the traditional packaging structure, there are many types of materials and many interfaces, which reduces the thermal resistance of materials and interfaces, improves the heat dissipation capacity of the overall structure, reduces the welding process, and reduces the production cost. The process flow is simple, and it is easy to realize automatic production.
Description
Technical Field
The utility model relates to an electron heat dissipation base plate technical field especially relates to an AlSiC heat dissipation insulating integration base plate for power device heat dissipation encapsulation.
Background
With the rapid development of modern microelectronic technology, electronic systems and electronic devices are developing toward high integration, miniaturization, high energy, high efficiency and high reliability. The high integration of electronic systems inevitably brings high power density, which causes electronic devices to generate high heat, and the excessive working temperature can seriously affect the electrical performance, mechanical performance, thermal stability, thermal cycle reliability and other performances of electronic components, so that the solution of the heat dissipation problem is an important link for the continued forward development of electronic packaging. The heat dissipation function in the packaging structure is mostly born by the insulating ceramic copper-clad plate and the metal-based heat dissipation substrate. In a traditional power chip packaging structure, an insulating ceramic copper-clad plate and a metal heat dissipation substrate are often connected through brazing, so that obvious material thermal resistance and interface thermal resistance caused by multiple layers of materials exist in the packaging structure, and the whole structure is difficult to dissipate heat; meanwhile, because the difference between the Coefficient of Thermal Expansion (CTE) of the insulating ceramic copper-clad plate and the metal-based heat dissipation substrate is large, the connection or material fracture is easily caused by thermal mismatch stress, and the thermal cycle reliability of the packaging structure is obviously reduced.
SUMMERY OF THE UTILITY MODEL
To the technical problem, the utility model discloses an AlSiC heat dissipation insulating integration base plate for power device heat dissipation encapsulation has improved packaging structure's heat dispersion.
To this end, the technical scheme of the utility model is that:
an AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of a power device comprises an AlSiC substrate, wherein an oxide film insulation layer is arranged on the surface of the AlSiC substrate, and a conductive film is printed on the surface of the oxide film insulation layer; the material of the oxide film insulating layer is AlSiC oxide. Further, the composition of the oxide of AlSiC contains Al2O3And SiO2。
By adopting the technical scheme, in the whole integrated substrate, the oxide film insulating layer is a common oxidation product of Al and SiC in the AlSiC substrate, and the oxide film insulating layer not only has good insulating property, but also has better bonding property with the AlSiC substrate. The integrated substrate has few types of materials and few interfaces, reduces the types of materials, and also reduces the thermal stress caused by thermal mismatch.
As a further improvement of the utility model, the oxide film insulating layer is obtained by adopting the micro-arc oxidation treatment on the surface of the AlSiC substrate, namely the oxide film insulating layer is a micro-arc oxide film.
As a further improvement of the present invention, the conductive film is obtained by using a thick film process.
As a further improvement of the present invention, the conductive film is a conductive metal layer obtained by a thick film method.
As a further improvement of the utility model, the conductive film is a conductive silver film.
Compared with the prior art, the beneficial effects of the utility model are that:
by adopting the technical scheme of the utility model, the material types are reduced, and the thermal stress caused by thermal mismatch is reduced; the problems of multiple material types and multiple interfaces in the traditional packaging structure are solved, the thermal resistance of the material and the thermal resistance of the interface are reduced, and the heat dissipation capability of the whole structure is improved; the welding procedures are reduced, the production cost is reduced, the process flow is simple, and the automatic production is easy to realize.
Drawings
Fig. 1 is a schematic top view of an AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of a power device according to an embodiment of the present invention.
Fig. 2 is a schematic side view of an AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of a power device according to an embodiment of the present invention.
The reference numerals include:
1-AlSiC heat dissipation substrate, 2-oxide film insulation layer, 3-conductive film.
Detailed Description
Preferred embodiments of the present invention will be described in further detail with reference to the accompanying drawings.
As shown in fig. 1 and fig. 2, an AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of a power device comprises an AlSiC substrate 1, wherein an oxide film insulation layer 2 is arranged on the surface of the AlSiC substrate 1, and a conductive film 3 is arranged on the surface of the oxide film insulation layer 2. The oxide film insulating layer 2 is obtained by performing micro-arc oxidation treatment on the surface of the AlSiC substrate 1, namely a micro-arc oxide film. The conductive film 3 is a thick film coating obtained by a thick film process.
Further, the thickness of the AlSiC substrate 1 is preferably 5mm, the thickness of the oxide film insulating layer is 20 μm, and the conductive film 3 is a conductive silver film prepared by a thick film method.
The above-mentioned embodiments are the preferred embodiments of the present invention, and the scope of the present invention is not limited to the above-mentioned embodiments, and the scope of the present invention includes and is not limited to the above-mentioned embodiments, and all equivalent changes made according to the shape and structure of the present invention are within the protection scope of the present invention.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022825897.5U CN213242534U (en) | 2020-11-30 | 2020-11-30 | AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022825897.5U CN213242534U (en) | 2020-11-30 | 2020-11-30 | AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of power device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213242534U true CN213242534U (en) | 2021-05-18 |
Family
ID=75883273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202022825897.5U Expired - Fee Related CN213242534U (en) | 2020-11-30 | 2020-11-30 | AlSiC heat dissipation and insulation integrated substrate for heat dissipation packaging of power device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN213242534U (en) |
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2020
- 2020-11-30 CN CN202022825897.5U patent/CN213242534U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210518 |