CS199432B1 - Způsob temperování monokrystalu. molybdenanu ' olovnatého - Google Patents

Způsob temperování monokrystalu. molybdenanu ' olovnatého Download PDF

Info

Publication number
CS199432B1
CS199432B1 CS267078A CS267078A CS199432B1 CS 199432 B1 CS199432 B1 CS 199432B1 CS 267078 A CS267078 A CS 267078A CS 267078 A CS267078 A CS 267078A CS 199432 B1 CS199432 B1 CS 199432B1
Authority
CS
Czechoslovakia
Prior art keywords
tempering
lead molybdate
crystal
single crystal
crystals
Prior art date
Application number
CS267078A
Other languages
Czech (cs)
English (en)
Inventor
Walter Bollmann
Original Assignee
Walter Bollmann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Walter Bollmann filed Critical Walter Bollmann
Publication of CS199432B1 publication Critical patent/CS199432B1/cs

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
CS267078A 1977-04-27 1978-04-25 Způsob temperování monokrystalu. molybdenanu ' olovnatého CS199432B1 (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD19861277A DD134423A3 (de) 1977-04-27 1977-04-27 Verfahren zur herstellung farbloser bleimolybdat-einkristalle

Publications (1)

Publication Number Publication Date
CS199432B1 true CS199432B1 (cs) 1980-07-31

Family

ID=5508150

Family Applications (1)

Application Number Title Priority Date Filing Date
CS267078A CS199432B1 (cs) 1977-04-27 1978-04-25 Způsob temperování monokrystalu. molybdenanu ' olovnatého

Country Status (3)

Country Link
CS (1) CS199432B1 (de)
DD (1) DD134423A3 (de)
SU (1) SU1081244A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232995A (ja) * 1983-06-10 1984-12-27 Sumitomo Electric Ind Ltd 引上単結晶の冷却方法

Also Published As

Publication number Publication date
SU1081244A1 (ru) 1984-03-23
DD134423A3 (de) 1979-02-28

Similar Documents

Publication Publication Date Title
DE69611189T2 (de) Planarer Wellenleiter und Verfahren zu seiner Herstellung
EP0241614B1 (de) Verfahren zur Fluoreszenzverbesserung von Ti:Al2O3 Laserkristallen durch Kontrolle von Kristallzüchtung-Atmosphären
DE69414652T2 (de) Verbessertes Verfahren zur Bildung von Siliconkristallen
Erdei et al. Growth studies of YVO4 crystals (II). Changes in Y V O‐stoichiometry
US6056817A (en) Process for producing semi-insulating InP single crystal and semi-insulating InP single crystal substrate
CS199432B1 (cs) Způsob temperování monokrystalu. molybdenanu ' olovnatého
DE2857640C2 (de) Verfahren zum Dotieren eines Halbleiters
EP0328073B1 (de) Verfahren zur Fluoreszenzverbesserung von Ti:Al2O3-Laser-Kristallen
US4587035A (en) Process for enhancing Ti:Al2 O3 tunable laser crystal fluorescence by annealing
EP1219724B1 (de) Aufdampfmaterial zur Herstellung hochbrechender optischer Schichten
EP0374880B1 (de) Verfahren zur Fluoreszenzverbesserung von Titandotierten Oxid-Kristallen für abstimmbaren Laser
CN113151899A (zh) 一种光功能晶体硼酸钙氧钬及其生长方法与应用
CS209657B1 (en) Method of making the colourless monocrystals of the plumbate molybdate
CN121451296B (zh) 一种钼铬酸锂单晶、其制备方法及滤光片
JPS63210100A (ja) 単分域タンタル酸リチウム単結晶の製造方法
US20040089024A1 (en) Preparation of high purity, low water content fused silica glass
JPH07101800A (ja) 1−lll−VI2 族化合物単結晶の製造方法
CZ306642B6 (cs) Způsob zvýšení luminiscenční účinnosti titanem dopovaného oxidového krystalu
JP2588632B2 (ja) シリコン単結晶の酸素析出方法
Zhang et al. The origin of radiation instability in yttrium-ion-doped lead tungstate crystals
CN117947514A (zh) 一种去除紫外吸收的K3Ba3Li2Al4B6O20F非线性光学晶体生长方法及紫外四倍频器件
CN119038874A (zh) 低羟基光学玻璃的制备方法
JP3617128B2 (ja) 化合物半導体単結晶の熱処理方法
JPH0214900A (ja) 熱処理方法
DE102005043398A1 (de) Verfahren zur Herstellung eines Titan-Saphir-Laserkristalls