CS259290B1 - Sublimer for vacuum device for layers preparation - Google Patents

Sublimer for vacuum device for layers preparation Download PDF

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Publication number
CS259290B1
CS259290B1 CS8610314A CS1031486A CS259290B1 CS 259290 B1 CS259290 B1 CS 259290B1 CS 8610314 A CS8610314 A CS 8610314A CS 1031486 A CS1031486 A CS 1031486A CS 259290 B1 CS259290 B1 CS 259290B1
Authority
CS
Czechoslovakia
Prior art keywords
vacuum
chamber
layers
sublimer
vacuum device
Prior art date
Application number
CS8610314A
Other languages
Czech (cs)
Slovak (sk)
Other versions
CS1031486A1 (en
Inventor
Milan Ferdinandy
Dusan Liska
Jozef Kral
Ivon Pecar
Original Assignee
Milan Ferdinandy
Dusan Liska
Jozef Kral
Ivon Pecar
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Milan Ferdinandy, Dusan Liska, Jozef Kral, Ivon Pecar filed Critical Milan Ferdinandy
Priority to CS8610314A priority Critical patent/CS259290B1/en
Priority to DD31076887A priority patent/DD289656A7/en
Priority to DE19873743342 priority patent/DE3743342A1/en
Priority to CH502187A priority patent/CH674809A5/de
Priority to HU608587A priority patent/HUT48826A/en
Publication of CS1031486A1 publication Critical patent/CS1031486A1/en
Publication of CS259290B1 publication Critical patent/CS259290B1/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

Vynález sa týká sublimátoru pře vákuové zariadenie na přípravu vrstiev a pre vákuové zariadenie na úpravu povrchov iónovými zvazkami.The invention relates to a sublimator for a vacuum device for preparing layers and for a vacuum device for treating surfaces with ionic bands.

V súčasnom období je poměrně málo rozšířené použitie prchavých a sublimujúcich látok pri priamom nanášaní vrstiev vo vákuu a pri úpravách povrchu pevných látok iónovými zvazkami. V případe použitia prchavých látok pre nanášanie vrstiev vo vákuu sú realizované zariadenia, kde zo zás-obníka prchávej, alebo sublimujúcej látky je látka unášaná tzv. nosným plynom a do vákuovej komory je; napúšťaná napúšťacím ventilom.At present, the use of volatile and sublimating substances in the direct deposition of vacuum coatings and in the treatment of solid surfaces with ionic bands is relatively low. In the case of the use of volatile substances for the deposition of layers in a vacuum, devices are realized where the substance of the volatile or sublimating substance is carried by the so-called. the carrier gas and the vacuum chamber is; impregnated with inlet valve.

Nevýhoda týchto princípov spočívá v tom, že do priestoru vákuovej komory sa spolu s prchavou, alebo sublimujúcou látkou dostává aj nosný plyn, ktorý vo váčšine prípadov z hladiska přípravy vrstiev nie je potřebný a v mnohých prfpadoch znečišťuje připravované vrstvy a vákuovú komoru. V případech, kde sú použité pre přípravu vrstiev látky, ktoré majú už pri nízkých teplotách vysoký tlak nasýtených pár, jedná sa predovšetkým o organokovové látky a karbonyly kovov, tieto sú zvyčajne do odparovačav vo vakuových komorách vkládané priamú. V ťakýčhto * prípáďóčh “ďóčháďzá к ich odparovaniu už počas čerpania vákuovej komory, čím sa znovu znečisťuje povrch podložiek a vákuová komora, a to1 před začiatkom technologického procesu.The disadvantage of these principles is that a carrier gas enters the vacuum chamber space together with the volatile or sublimating substance, which in most cases is unnecessary from the viewpoint of layer preparation and in many cases contaminates the prepared layers and the vacuum chamber. Where materials having high saturated vapor pressure already at low temperatures are used for the preparation of layers, in particular organometallic substances and metal carbonyls, these are usually introduced directly into the evaporators in vacuum chambers. In this case, they evaporate as soon as the vacuum chamber is pumped, again polluting the surface of the pads and the vacuum chamber 1 before the start of the process.

Uvedené nedostatky odstraňuje zariadenie podťa vynálezu, ktorého podstata spočívá v tom, že na komoru 1 vákuového zariadenia na přípravu vrstiev sa připojí sublimačná komora 3 cez vákuový škrtiaci ventil 4 pomocou příruby 2, pričom v spodnej časti sublimačnej komory 3 je umiestnený ohrievač 5 so zdrojom subllmátu, pričom sublimačná komora 3 je spojená s vákuovým čerpacím systémem 7 cez vákuový ventil 6.The above-mentioned drawbacks are eliminated by a device according to the invention, characterized in that a sublimation chamber 3 is connected to the chamber 1 of the vacuum preparation device 3 via a vacuum throttle 4 by means of a flange 2, the heater 5 with a sublime source. wherein the sublimation chamber 3 is connected to the vacuum pumping system 7 via the vacuum valve 6.

Činnost zariadenia podl'a vynálezu je následovná: Nezávisle na vákpovom systéme s vákuovou komorou 1 pre přípravu'vrstiev s uzatvoreným škrtiacim vákuovým ventilom 4, je možné doplnenie, alebo záměna látky v zdroji sublimátu. Komora sublimátora 3 je potom odčerpaná vákuovým čerpacím systémem 7 cez ventil 6 na tlak totožný, alebo váčší ako je vo vákuovej komoře 1 pre přípravu vrstiev. Pri samotnom nanášaní vrstiev v komoře 1, například metodou reaktívneho naparovania, igónového· plátovania, alebo plazmovými metodami CVD, je podl'a potřeby otvorený vákuový škrtiaci ventil 4 a v závislosti na použitej látke je uvedený do činnosti a regulovaný ohrievač so zdrojom látky 5.The operation of the device according to the invention is as follows: Irrespective of the vacuum system with the vacuum chamber 1 for the preparation of the layers with the closed choke vacuum valve 4, the addition or replacement of the substance in the sublimate source is possible. The chamber of the sublimator 3 is then pumped by the vacuum pumping system 7 through a pressure valve 6 to the same pressure or greater than that in the vacuum chamber 1 for preparing the layers. During the deposition of the layers in the chamber 1, for example by reactive vapor deposition, ion-plating, or plasma CVD methods, a vacuum throttle valve 4 is opened as required and, depending on the substance used, a controlled heater with the source of substance 5.

Zariadenie podlá vynálezu rozšiřuje možnosti přípravy vrstiev metodami reaktívneho naparovania, iónovélio plátovania plazmatických metod CVD, ako aj možnosti pri vnášaní látky do iónových zdrojov pri úpravách povrchu iónovými zvazkami.The device according to the invention extends the possibilities of the preparation of layers by the methods of reactive vapor deposition, ion-ion cladding of plasma CVD methods, as well as the possibilities of introducing the substance into ion sources for surface treatment by ion beams.

Claims (1)

Sublimátor pre vákuové zariadenie na přípravu vrstiev, ktorý je připojený na vákuovú komoru vyznačený tým, že sublimačná komora (3) je cez vákuový škrtiaci ventil [4] pomocou příruby (2) připojená na komoru (1) vákuového zariadenia, pričom vA sublimator for a vacuum preparation device which is connected to a vacuum chamber, characterized in that the sublimation chamber (3) is connected to the vacuum device chamber (1) via a vacuum throttle valve [4] by means of a flange (2). VYNÁLEZU spodnej časti sublimačnej komory (3) je umiestnený ohrievač (5) so zdrojom sublimátu, pričom sublimačná komora (3) je spojená s vákuovým čerpadlom (7) cez vákuový ventil (6).BACKGROUND OF THE INVENTION In the lower part of the sublimation chamber (3), a heater (5) is provided with a source of sublimate, the sublimation chamber (3) being connected to the vacuum pump (7) via a vacuum valve (6).
CS8610314A 1986-12-31 1986-12-31 Sublimer for vacuum device for layers preparation CS259290B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CS8610314A CS259290B1 (en) 1986-12-31 1986-12-31 Sublimer for vacuum device for layers preparation
DD31076887A DD289656A7 (en) 1986-12-31 1987-12-18 SUBLIMATION PLANT FOR A VACUUM PLANT FOR THE PRODUCTION OF LAYERS
DE19873743342 DE3743342A1 (en) 1986-12-31 1987-12-21 Sublimator of a vacuum installation
CH502187A CH674809A5 (en) 1986-12-31 1987-12-23
HU608587A HUT48826A (en) 1986-12-31 1987-12-29 Sublimating device for vacuum apparatus preparing layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CS8610314A CS259290B1 (en) 1986-12-31 1986-12-31 Sublimer for vacuum device for layers preparation

Publications (2)

Publication Number Publication Date
CS1031486A1 CS1031486A1 (en) 1988-02-15
CS259290B1 true CS259290B1 (en) 1988-10-14

Family

ID=5448609

Family Applications (1)

Application Number Title Priority Date Filing Date
CS8610314A CS259290B1 (en) 1986-12-31 1986-12-31 Sublimer for vacuum device for layers preparation

Country Status (5)

Country Link
CH (1) CH674809A5 (en)
CS (1) CS259290B1 (en)
DD (1) DD289656A7 (en)
DE (1) DE3743342A1 (en)
HU (1) HUT48826A (en)

Also Published As

Publication number Publication date
HUT48826A (en) 1989-07-28
CH674809A5 (en) 1990-07-31
CS1031486A1 (en) 1988-02-15
DD289656A7 (en) 1991-05-08
DE3743342A1 (en) 1988-07-14

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