CS274827B2 - Method of hydrogenated silicon carbide's inorganic amorphous thin layer production - Google Patents

Method of hydrogenated silicon carbide's inorganic amorphous thin layer production

Info

Publication number
CS274827B2
CS274827B2 CS471688A CS471688A CS274827B2 CS 274827 B2 CS274827 B2 CS 274827B2 CS 471688 A CS471688 A CS 471688A CS 471688 A CS471688 A CS 471688A CS 274827 B2 CS274827 B2 CS 274827B2
Authority
CS
Czechoslovakia
Prior art keywords
silicon carbide
thin layer
amorphous thin
hydrogenated silicon
layer production
Prior art date
Application number
CS471688A
Other languages
Czech (cs)
Other versions
CS8804716A1 (en
Inventor
Jiri Ing Stuchlik
Jan Rndr Csc Kocka
Milan Rndr Csc Vanecek
Oldrich Stika
Milos Rndr Nesladek
Original Assignee
Fyzikalni Ustav Csav
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fyzikalni Ustav Csav filed Critical Fyzikalni Ustav Csav
Priority to CS471688A priority Critical patent/CS274827B2/en
Publication of CS8804716A1 publication Critical patent/CS8804716A1/en
Publication of CS274827B2 publication Critical patent/CS274827B2/en

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Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Carbon And Carbon Compounds (AREA)

Abstract

The invention solves the production of thin layers of silicon carbide utilisable as protection insulation passivating layer using the method consisting in plasma-chemical sedimentation in high-frequency glow discharge of distributed gasses on substrates at the temperature of 50 to 500 degrees Celsius, in the pressure of 1 to 500 Pa at surface density of the power supplied to plasma in range of 1 000 to 10 000 W/m<2> and at gas flow relating to electrode surface in range of 1 to 10 (Pam<3>/s)m<2>. The starting substance is the monomethylsilane gas with chemical formula SiH3-CH3.
CS471688A 1988-06-30 1988-06-30 Method of hydrogenated silicon carbide's inorganic amorphous thin layer production CS274827B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CS471688A CS274827B2 (en) 1988-06-30 1988-06-30 Method of hydrogenated silicon carbide's inorganic amorphous thin layer production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CS471688A CS274827B2 (en) 1988-06-30 1988-06-30 Method of hydrogenated silicon carbide's inorganic amorphous thin layer production

Publications (2)

Publication Number Publication Date
CS8804716A1 CS8804716A1 (en) 1990-10-12
CS274827B2 true CS274827B2 (en) 1991-11-12

Family

ID=5390550

Family Applications (1)

Application Number Title Priority Date Filing Date
CS471688A CS274827B2 (en) 1988-06-30 1988-06-30 Method of hydrogenated silicon carbide's inorganic amorphous thin layer production

Country Status (1)

Country Link
CS (1) CS274827B2 (en)

Also Published As

Publication number Publication date
CS8804716A1 (en) 1990-10-12

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