CS274946B2 - Method of high-duty semi-conductor structures' multi-layer contact etching - Google Patents

Method of high-duty semi-conductor structures' multi-layer contact etching

Info

Publication number: CS274946B2
Authority: CS; Czechoslovakia
Prior art keywords: layer contact; etched; conductor structures; temperature; degrees celsius
Prior art date: 1988-03-18

Application number

CS176888A

Other languages

English (en)

Other versions

CS8801768A1 (en

Inventor

Daniela Ing Ricarova

Jaromir Rndr Louda

Jaroslav Rndr Csc Homola

Original Assignee

Ckd Polovodice

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-03-18

Filing date

1988-03-18

Publication date

1991-12-17

1988-03-18 Application filed by Ckd Polovodice filed Critical Ckd Polovodice

1988-03-18 Priority to CS176888A priority Critical patent/CS274946B2/cs

1990-11-14 Publication of CS8801768A1 publication Critical patent/CS8801768A1/cs

1991-12-17 Publication of CS274946B2 publication Critical patent/CS274946B2/cs

Links

239000004065 semiconductor Substances 0.000 title abstract 2
238000005530 etching Methods 0.000 title 1
238000000034 method Methods 0.000 title 1
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 4
239000010410 layer Substances 0.000 abstract 3
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical class O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 2
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
QQMBHAVGDGCSGY-UHFFFAOYSA-N [Ti].[Ni].[Ag] Chemical compound [Ti].[Ni].[Ag] QQMBHAVGDGCSGY-UHFFFAOYSA-N 0.000 abstract 1
239000002365 multiple layer Substances 0.000 abstract 1
229910052759 nickel Inorganic materials 0.000 abstract 1
229910017604 nitric acid Inorganic materials 0.000 abstract 1
MZFIXCCGFYSQSS-UHFFFAOYSA-N silver titanium Chemical compound [Ti].[Ag] MZFIXCCGFYSQSS-UHFFFAOYSA-N 0.000 abstract 1
239000010936 titanium Substances 0.000 abstract 1
229910052719 titanium Inorganic materials 0.000 abstract 1

Landscapes

Weting (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

CS176888A 1988-03-18 1988-03-18 Method of high-duty semi-conductor structures' multi-layer contact etching CS274946B2 (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CS176888A CS274946B2 (en)	1988-03-18	1988-03-18	Method of high-duty semi-conductor structures' multi-layer contact etching

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CS176888A CS274946B2 (en)	1988-03-18	1988-03-18	Method of high-duty semi-conductor structures' multi-layer contact etching

Publications (2)

Publication Number	Publication Date
CS8801768A1 CS8801768A1 (en)	1990-11-14
CS274946B2 true CS274946B2 (en)	1991-12-17

Family

ID=5352912

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CS176888A CS274946B2 (en)	1988-03-18	1988-03-18	Method of high-duty semi-conductor structures' multi-layer contact etching

Country Status (1)

Country	Link
CS (1)	CS274946B2 (cs)

1988
- 1988-03-18 CS CS176888A patent/CS274946B2/cs unknown

Also Published As

Publication number	Publication date
CS8801768A1 (en)	1990-11-14

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