CS274946B2 - Method of high-duty semi-conductor structures' multi-layer contact etching - Google Patents
Method of high-duty semi-conductor structures' multi-layer contact etchingInfo
- Publication number
- CS274946B2 CS274946B2 CS176888A CS176888A CS274946B2 CS 274946 B2 CS274946 B2 CS 274946B2 CS 176888 A CS176888 A CS 176888A CS 176888 A CS176888 A CS 176888A CS 274946 B2 CS274946 B2 CS 274946B2
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- layer contact
- etched
- conductor structures
- temperature
- degrees celsius
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical class O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- QQMBHAVGDGCSGY-UHFFFAOYSA-N [Ti].[Ni].[Ag] Chemical compound [Ti].[Ni].[Ag] QQMBHAVGDGCSGY-UHFFFAOYSA-N 0.000 abstract 1
- 239000002365 multiple layer Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- MZFIXCCGFYSQSS-UHFFFAOYSA-N silver titanium Chemical compound [Ti].[Ag] MZFIXCCGFYSQSS-UHFFFAOYSA-N 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Landscapes
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The goal of the solution is to etch the multiple-layer contact of the power semiconductor structures composed of titanium - silver or titanium - nickel - silver. At first, the contact layers that contain mixed orthophosphoric and nitric acids in the ratio from 25:1 to 5:1 at the temperature from 20 to 100 degrees Celsius are etched, whereupon the contact layers that contain nickel in nitric acid, containing from 1 to 5 percent by weight of hydrochloric acid, at the temperature from 20 to 40 degrees Celsius, are etched. At last, the contact layers containing titanium in hydrochloric acid at the temperature from 20 to 40 degrees Celsius are etched.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS176888A CS274946B2 (en) | 1988-03-18 | 1988-03-18 | Method of high-duty semi-conductor structures' multi-layer contact etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CS176888A CS274946B2 (en) | 1988-03-18 | 1988-03-18 | Method of high-duty semi-conductor structures' multi-layer contact etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CS8801768A1 CS8801768A1 (en) | 1990-11-14 |
| CS274946B2 true CS274946B2 (en) | 1991-12-17 |
Family
ID=5352912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS176888A CS274946B2 (en) | 1988-03-18 | 1988-03-18 | Method of high-duty semi-conductor structures' multi-layer contact etching |
Country Status (1)
| Country | Link |
|---|---|
| CS (1) | CS274946B2 (en) |
-
1988
- 1988-03-18 CS CS176888A patent/CS274946B2/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CS8801768A1 (en) | 1990-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW353237B (en) | Method to produce a semiconductor body that can send and/or receive light | |
| JPS6456364A (en) | Production of graphite | |
| DE3574144D1 (en) | Method for the single step preparation of glycosyl fluorides | |
| JPS5343481A (en) | Mirror surface etching method of sapphire substrate crystal | |
| JPS521203A (en) | Manufacturing method of rotor material of rotor unit | |
| JPS5352354A (en) | Semiconductor local heating method | |
| Daioh et al. | Identity Period of Graphite Intercalation Compound with Sulfuric Acid | |
| SU1544111A1 (en) | METHOD OF DETERMINATION OF THICKNESSES OF GaAs AND GaAlAs IN MULTILAYER STRUCTURES | |
| JPS5456763A (en) | Resistivity measuring method for semiconductor silicon single-crystal | |
| JPS57172738A (en) | Etching method of semiconductor element | |
| JPS55134173A (en) | Etching method for aluminum or aluminum base alloy | |
| JPS57135800A (en) | Surface treatment of crystal of gallium and arsenic compound | |
| EP0225519A3 (en) | High definition anodized sublayer boundary | |
| JPS56147439A (en) | Etching method | |
| JPS53126869A (en) | Etching treatment method of semiconductors | |
| EP0292940A3 (en) | Superconductor | |
| JPS57183326A (en) | Dry etching method | |
| JPS57120658A (en) | Manufacture of superconductive compound wire rod | |
| JPS5335476A (en) | Production of semiconductor unit | |
| Wu et al. | Theory of the critical temperature for superconductors with small lambda(I). | |
| Ram | Should mild hypertension be treated? Choosing the middle course | |
| VASQUEZ | Oxidation of semiconductors and superconductors(Patent Application) | |
| CW Jr | Theoretical transition probabilities between the lowest 2 S, 2 P and 2 D states of Na, K, Rb, and Cs | |
| Baranova et al. | Chemical polishing and etching of a Y-Ba-Cu-O system high-temperature superconductor | |
| Kokorin et al. | Effect of Heating Under Pressure on the Structural State of the Heusler Alloy Cu sub 2 MnAl |