DD141932B1 - Verfahren und vorrichtung zur teilchenstromionisierung und hochratebeschichtung - Google Patents

Verfahren und vorrichtung zur teilchenstromionisierung und hochratebeschichtung Download PDF

Info

Publication number: DD141932B1
Authority: DD; German Democratic Republic
Prior art keywords: item; hollow cathode; particle; gas; discharge
Prior art date: 1978-12-18

Application number

DD20984678A

Other languages

German (de)

English (en)

Other versions

DD141932A1 (de

Inventor

Guenter Reisse

Manfred Rost

Hans-Joerg Erler

Friedrich Henny

Jochen Klemm

Original Assignee

Guenter Reisse

Manfred Rost

Erler Hans Joerg

Friedrich Henny

Jochen Klemm

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-12-18

Filing date

1978-12-18

Publication date

1982-06-30

1978-12-18 Application filed by Guenter Reisse, Manfred Rost, Erler Hans Joerg, Friedrich Henny, Jochen Klemm filed Critical Guenter Reisse

1978-12-18 Priority to DD20984678A priority Critical patent/DD141932B1/de

1979-12-06 Priority to DE19792949121 priority patent/DE2949121A1/de

1979-12-06 Priority to CS850579A priority patent/CS231558B1/cs

1979-12-18 Priority to JP16364879A priority patent/JPS55123124A/ja

1980-05-28 Publication of DD141932A1 publication Critical patent/DD141932A1/de

1982-06-30 Publication of DD141932B1 publication Critical patent/DD141932B1/de

Links

239000002245 particle Substances 0.000 title claims description 51
238000000034 method Methods 0.000 title claims description 17
239000011248 coating agent Substances 0.000 title claims description 12
238000000576 coating method Methods 0.000 title claims description 12
239000000463 material Substances 0.000 claims description 17
239000007789 gas Substances 0.000 claims description 15
239000000758 substrate Substances 0.000 claims description 15
230000001133 acceleration Effects 0.000 claims description 10
238000000605 extraction Methods 0.000 claims description 10
230000007935 neutral effect Effects 0.000 claims description 7
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
239000000956 alloy Substances 0.000 claims description 3
229910045601 alloy Inorganic materials 0.000 claims description 3
239000010406 cathode material Substances 0.000 claims description 3
229910052786 argon Inorganic materials 0.000 claims description 2
229910052799 carbon Inorganic materials 0.000 claims description 2
238000010894 electron beam technology Methods 0.000 claims description 2
230000004907 flux Effects 0.000 claims description 2
239000000203 mixture Substances 0.000 claims description 2
229910052756 noble gas Inorganic materials 0.000 claims description 2
-1 polycyclic hydrocarbons Chemical class 0.000 claims description 2
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
229930195733 hydrocarbon Natural products 0.000 claims 1
229910000077 silane Inorganic materials 0.000 claims 1
229910052710 silicon Inorganic materials 0.000 claims 1
239000010703 silicon Substances 0.000 claims 1
150000002500 ions Chemical class 0.000 description 31
238000000151 deposition Methods 0.000 description 7
238000010884 ion-beam technique Methods 0.000 description 7
238000000889 atomisation Methods 0.000 description 6
230000008021 deposition Effects 0.000 description 6
238000007733 ion plating Methods 0.000 description 6
230000015572 biosynthetic process Effects 0.000 description 5
150000001875 compounds Chemical class 0.000 description 4
238000007737 ion beam deposition Methods 0.000 description 3
238000005121 nitriding Methods 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
238000004544 sputter deposition Methods 0.000 description 3
206010035148 Plague Diseases 0.000 description 2
241000607479 Yersinia pestis Species 0.000 description 2
238000005275 alloying Methods 0.000 description 2
239000002800 charge carrier Substances 0.000 description 2
238000010276 construction Methods 0.000 description 2
230000005684 electric field Effects 0.000 description 2
238000010849 ion bombardment Methods 0.000 description 2
229910052757 nitrogen Inorganic materials 0.000 description 2
239000007787 solid Substances 0.000 description 2
229910052729 chemical element Inorganic materials 0.000 description 1
230000007797 corrosion Effects 0.000 description 1
238000005260 corrosion Methods 0.000 description 1
230000007547 defect Effects 0.000 description 1
230000007812 deficiency Effects 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
238000006073 displacement reaction Methods 0.000 description 1
238000009826 distribution Methods 0.000 description 1
239000000428 dust Substances 0.000 description 1
238000010410 dusting Methods 0.000 description 1
238000010893 electron trap Methods 0.000 description 1
238000001125 extrusion Methods 0.000 description 1
229910002804 graphite Inorganic materials 0.000 description 1
239000010439 graphite Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
239000006115 industrial coating Substances 0.000 description 1
238000001659 ion-beam spectroscopy Methods 0.000 description 1
238000001755 magnetron sputter deposition Methods 0.000 description 1
238000012423 maintenance Methods 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
238000004377 microelectronic Methods 0.000 description 1
230000005693 optoelectronics Effects 0.000 description 1
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238000007493 shaping process Methods 0.000 description 1
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239000013077 target material Substances 0.000 description 1
239000010409 thin film Substances 0.000 description 1
230000001960 triggered effect Effects 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
- C23C8/38—Treatment of ferrous surfaces
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/38—Guiding or centering of electrodes
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/40—Details, e.g. electrodes, nozzles using applied magnetic fields, e.g. for focusing or rotating the arc
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder or liquid

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Plasma & Fusion (AREA)
Physics & Mathematics (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Spectroscopy & Molecular Physics (AREA)
Analytical Chemistry (AREA)
Physical Vapour Deposition (AREA)
Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Thiazole And Isothizaole Compounds (AREA)

DD20984678A 1978-12-18 1978-12-18 Verfahren und vorrichtung zur teilchenstromionisierung und hochratebeschichtung DD141932B1 (de)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
DD20984678A DD141932B1 (de)	1978-12-18	1978-12-18	Verfahren und vorrichtung zur teilchenstromionisierung und hochratebeschichtung
DE19792949121 DE2949121A1 (de)	1978-12-18	1979-12-06	Verfahren und vorrichtung zur teilchenstromionisierung und hochratebeschichtung
CS850579A CS231558B1 (en)	1978-12-18	1979-12-06	Method of ionisation of stream of particles and device to perform the method
JP16364879A JPS55123124A (en)	1978-12-18	1979-12-18	Method of and device for ionizing particle flow and forming high speed layer

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DD20984678A DD141932B1 (de)	1978-12-18	1978-12-18	Verfahren und vorrichtung zur teilchenstromionisierung und hochratebeschichtung

Publications (2)

Publication Number	Publication Date
DD141932A1 DD141932A1 (de)	1980-05-28
DD141932B1 true DD141932B1 (de)	1982-06-30

Family

ID=5515900

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DD20984678A DD141932B1 (de)	1978-12-18	1978-12-18	Verfahren und vorrichtung zur teilchenstromionisierung und hochratebeschichtung

Country Status (4)

Country	Link
JP (1)	JPS55123124A (cs)
CS (1)	CS231558B1 (cs)
DD (1)	DD141932B1 (cs)
DE (1)	DE2949121A1 (cs)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4407712A (en) *	1982-06-01	1983-10-04	The United States Of America As Represented By The Secretary Of The Army	Hollow cathode discharge source of metal vapor
JPS59179152A (ja) *	1983-03-31	1984-10-11	Agency Of Ind Science & Technol	アモルファスシリコン半導体薄膜の製造方法
IT1211938B (it) *	1987-11-27	1989-11-08	Siv Soc Italiana Vetro	Apparecchiatura e procedimento per la deposizione di uno strato sottile su un substrato trasparente, particolarmente per la realizzazione di vetrature
DE10111515A1 (de) *	2001-02-19	2002-08-14	Fraunhofer Ges Forschung	Plasma-Beschichtungsanlage, Plasma-Beschichtungsverfahren und Verwendung des Verfahrens
DE20210882U1 (de)	2002-07-12	2002-10-10	Siemens AG, 80333 München	Abstützvorrichtung zur Abstützung von zumindest einer Wicklung
WO2012177900A1 (en)	2011-06-22	2012-12-27	Research Triangle Institute, International	Bipolar microelectronic device
JP7102045B1 (ja) *	2022-02-16	2022-07-19	株式会社金星	プラズマトーチ、プラズマ溶射装置、およびプラズマトーチの制御方法

1978
- 1978-12-18 DD DD20984678A patent/DD141932B1/de not_active IP Right Cessation
1979
- 1979-12-06 DE DE19792949121 patent/DE2949121A1/de not_active Withdrawn
- 1979-12-06 CS CS850579A patent/CS231558B1/cs unknown
- 1979-12-18 JP JP16364879A patent/JPS55123124A/ja active Pending

Also Published As

Publication number	Publication date
JPS55123124A (en)	1980-09-22
DE2949121A1 (de)	1980-06-26
CS231558B1 (en)	1984-12-14
DD141932A1 (de)	1980-05-28

Legal Events

Date	Code	Title	Description
1996-09-26	ENJ	Ceased due to non-payment of renewal fee

Publication	Publication Date	Title
DE4412906C1 (de)	1995-07-13	Verfahren und Einrichtung für die ionengestützte Vakuumbeschichtung
DE4029268C2 (de)	1995-07-06	Verfahren zur gleichspannungs-bogenentladungs-unterstützten, reaktiven Behandlung von Gut und Vakuumbehandlungsanlage zur Durchführung
DE3708717C2 (cs)	1990-12-20
DE3543316C2 (cs)	1988-01-28
DE2823876A1 (de)	1979-01-04	Verfahren zum verdampfen von material in einer vakuumaufdampfanlage
DE3206882A1 (de)	1982-10-14	Verfahren und vorrichtung zum verdampfen von material unter vakuum
DE19505268A1 (de)	1996-08-22	Verfahren und Vorrichtung zur Behandlung von Substratoberflächen
DE19902146A1 (de)	2000-08-03	Verfahren und Einrichtung zur gepulsten Plasmaaktivierung
CH687111A5 (de)	1996-09-13	Verfahren zum Erzeugen einer Niederspannungsentladung, Vakuumbehandlungsanlage hierfuer sowie Anwendung des Verfahrens.
EP1110234B1 (de)	2006-12-06	Vorrichtung und verfahren zur beschichtung von substraten im vakuum
DE19546827C2 (de)	1999-03-25	Einrichtung zur Erzeugung dichter Plasmen in Vakuumprozessen
DE19506513C2 (de)	1996-12-05	Einrichtung zur reaktiven Beschichtung
DE4228499C1 (de)	1993-10-07	Verfahren und Einrichtung zur plasmagestützten Beschichtung von Substraten
EP0438627A1 (de)	1991-07-31	Bogenentladungsverdampfer mit mehreren Verdampfertiegeln
DE3880275T2 (de)	1993-10-21	Anlage und Verfahren zur Ablagerung einer dünnen Schicht auf ein durchsichtiges Substrat, insbesondere zur Herstellung von Glasscheiben.
DD141932A1 (de)	1980-05-28	Verfahren und vorrichtung zur teilchenstromionisierung und hochratebeschichtung
DE102016116762A1 (de)	2018-03-08	Verfahren zum Abscheiden einer Schicht mittels einer Magnetronsputtereinrichtung
EP0867036A1 (de)	1998-09-30	Verfahren und einrichtung zur vorbehandlung von substraten
EP0308680A1 (de)	1989-03-29	Vorrichtung zum Kathodenzerstäuben
DE68919671T2 (de)	1995-04-06	Universelle Kaltkathoden-Ionenerzeugungs- und -beschleunigungsvorrichtung.
DE4336680C2 (de)	1998-05-14	Verfahren zum Elektronenstrahlverdampfen
DE102015104433B3 (de)	2016-09-29	Verfahren zum Betreiben einer Kaltkathoden-Elektronenstrahlquelle
EP2087503A1 (de)	2009-08-12	Vorrichtung zum vorbehandeln von substraten
CH636647A5 (de)	1983-06-15	Vakuumbedampfungsanlage.
DE3030454C2 (de)	1987-04-02	Vorrichtung zur großflächigen Abscheidung von haftfesten, insbesondere harten Kohlenstoffschichten