JPS55123124A - Method of and device for ionizing particle flow and forming high speed layer - Google Patents
Method of and device for ionizing particle flow and forming high speed layerInfo
- Publication number
- JPS55123124A JPS55123124A JP16364879A JP16364879A JPS55123124A JP S55123124 A JPS55123124 A JP S55123124A JP 16364879 A JP16364879 A JP 16364879A JP 16364879 A JP16364879 A JP 16364879A JP S55123124 A JPS55123124 A JP S55123124A
- Authority
- JP
- Japan
- Prior art keywords
- high speed
- particle flow
- forming high
- speed layer
- ionizing particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002245 particle Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
- C23C8/38—Treatment of ferrous surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/38—Guiding or centering of electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
- H05H1/40—Details, e.g. electrodes, nozzles using applied magnetic fields, e.g. for focusing or rotating the arc
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder or liquid
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Thiazole And Isothizaole Compounds (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD20984678A DD141932B1 (de) | 1978-12-18 | 1978-12-18 | Verfahren und vorrichtung zur teilchenstromionisierung und hochratebeschichtung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55123124A true JPS55123124A (en) | 1980-09-22 |
Family
ID=5515900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16364879A Pending JPS55123124A (en) | 1978-12-18 | 1979-12-18 | Method of and device for ionizing particle flow and forming high speed layer |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS55123124A (cs) |
| CS (1) | CS231558B1 (cs) |
| DD (1) | DD141932B1 (cs) |
| DE (1) | DE2949121A1 (cs) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9136794B2 (en) | 2011-06-22 | 2015-09-15 | Research Triangle Institute, International | Bipolar microelectronic device |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4407712A (en) * | 1982-06-01 | 1983-10-04 | The United States Of America As Represented By The Secretary Of The Army | Hollow cathode discharge source of metal vapor |
| JPS59179152A (ja) * | 1983-03-31 | 1984-10-11 | Agency Of Ind Science & Technol | アモルファスシリコン半導体薄膜の製造方法 |
| IT1211938B (it) * | 1987-11-27 | 1989-11-08 | Siv Soc Italiana Vetro | Apparecchiatura e procedimento per la deposizione di uno strato sottile su un substrato trasparente, particolarmente per la realizzazione di vetrature |
| DE10111515A1 (de) * | 2001-02-19 | 2002-08-14 | Fraunhofer Ges Forschung | Plasma-Beschichtungsanlage, Plasma-Beschichtungsverfahren und Verwendung des Verfahrens |
| DE20210882U1 (de) | 2002-07-12 | 2002-10-10 | Siemens AG, 80333 München | Abstützvorrichtung zur Abstützung von zumindest einer Wicklung |
| JP7102045B1 (ja) * | 2022-02-16 | 2022-07-19 | 株式会社金星 | プラズマトーチ、プラズマ溶射装置、およびプラズマトーチの制御方法 |
-
1978
- 1978-12-18 DD DD20984678A patent/DD141932B1/de not_active IP Right Cessation
-
1979
- 1979-12-06 DE DE19792949121 patent/DE2949121A1/de not_active Withdrawn
- 1979-12-06 CS CS850579A patent/CS231558B1/cs unknown
- 1979-12-18 JP JP16364879A patent/JPS55123124A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9136794B2 (en) | 2011-06-22 | 2015-09-15 | Research Triangle Institute, International | Bipolar microelectronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| CS231558B1 (en) | 1984-12-14 |
| DD141932B1 (de) | 1982-06-30 |
| DD141932A1 (de) | 1980-05-28 |
| DE2949121A1 (de) | 1980-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS54125900A (en) | Method of and device for counting point of pseudooshooting | |
| JPS5763855A (en) | Semiconductor device and method of producing same | |
| JPS55108752A (en) | Semiconductor device and method of fabricating same | |
| JPS5533089A (en) | Method of and device for sealing article part | |
| JPS5567172A (en) | Method of fabricating semiconductor and semiconductor device | |
| JPS54158881A (en) | Field effect device and method of fabricating same | |
| JPS558296A (en) | Method of and device for controlling train speed | |
| JPS54158896A (en) | Piezooelectric device and method of fabricating same | |
| JPS54158190A (en) | Semiconductor device and method of fabricating same | |
| JPS57117420A (en) | Method of forming deposit and device for executing said method | |
| JPS578609A (en) | Method of packing film and device for said method | |
| ZA79997B (en) | Method of and apparatus for reducing back corona effects | |
| JPS5511082A (en) | Method and device for reducing luster of surface | |
| JPS5567135A (en) | Method of forming metallic film of semiconductor device | |
| JPS5795670A (en) | Semiconductor device and method of producing same | |
| JPS5568670A (en) | Semiconductor device and method of forming electrode on partial range of semiconductor surface | |
| JPS5539289A (en) | Method of removing floating particle and its device | |
| JPS57164572A (en) | Field effect transistor device and method of producing same | |
| JPS55144260A (en) | Method and device for corona charging of moving surface | |
| JPS55123124A (en) | Method of and device for ionizing particle flow and forming high speed layer | |
| JPS5784172A (en) | Semiconductor device and method of producing same | |
| JPS5756975A (en) | V-mos field effect semiconductor device and method of producing same | |
| JPS5332089A (en) | Method of and apparatus for determining distribution of particle size | |
| JPS54140872A (en) | Semiconductor device and method of fabricating same | |
| JPS5738220A (en) | Method and device for carrying material, quantity thereof is adjusted |