DD143127A1 - DEVICE FOR CARRYING OVER THERMAL WORK PROCESSES, ESPECIALLY IN THE SEMICONDUCTOR INDUSTRY - Google Patents

Abstract

The invention relates to a device for carrying out mainly thermal work processes, in particular the wafer processes in the semiconductor industry and the refining process in optics with high demands on - the purity of the atmosphere in the device, - the spatial temperature stability - the length of the temperature-constant zone - the possibility of Realization of temporal and spatial temperature gradients and - the batch quantity.

Description

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Title of the invention

Device for carrying out mainly thermal work processes, in particular in the semiconductor industry »

Field of application of the invention

The invention relates to a universal device for carrying out predominantly thermal work processes, in particular the wafer processes in the semiconductor industry and the compensation process in optics with high demands on

- The purity of the atmosphere in the device

- the spatial temperature stability

- the length of the temperature-constant zone

the possibility to realize temporal and spatial temperature gradients and

- the batch quantity.

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The liquid phase epitaxy techniques, such as the sliding method, dipping method, charging and removing of molten masses by centrifugal force and / or gravity, are feasible. The implementation of multiple epitaxy and the production of multilayer structures can be carried out as part of mass production.

Also machining processes that use gas supplied Eeaktanden as vapor phase epitaxy of AB compounds, silicon epitaxy, vapor diffusion _t planar technology, chemical vapor deposition, etch and oxidation processes and vapor deposition processes can be carried out as mass production processes.

Characteristic of the known technical solutions

Thermal treatment methods are generally characterized by the batchwise treatment of the work items, with an optimal batch capacity is sought. Technical solutions for continuous processes with constant maintenance of the process conditions are limited to a few applications and require the most demanding apparatus, control and regulation conditions.

Commonly used are devices that periodically reproduce process conditions. They have the common disadvantage of low batch capacity.

These devices include horizontal or vertical linear reactors and heaters. The working space is formed by linear tubular bodies and enveloped by the heater. Their usable length is determined by the length of the temperature-constant zone, which occupies only a fraction of the reactor length and by other radiation conditions at the edge zones of the furnace as well as differences in power input, heat transfer and heat radiation to the inside or outside - limited.

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Historically, special facilities have been designed for each work process, so that today a variety of different reactor variants, heaters and system geometries are in operation and equally different replaced or redesigned.

Object of the invention

The object of the invention is to provide a universally applicable device with a simple, adaptable to the purpose of construction and maximum charge capacity ♦

Statement of the invention

The technical task includes a heater with the longest possible temperature-constant zone. The ideal case is that kiln length becomes the same usable length. Furthermore, the return of the existing variety of variants of reactor and vessel systems must be made on a universally usable vessel principle for the realization of a modular system with few Anpaßteilen for various uses. As a result, a standardized system geometry with the three basic components reactor design, media supply and general control system can be designed by the same installation geometries.

Features of the invention

The inventive solution of the problem provides as a basic element a horizontally disposed and annularly closed heating device (Toroidalsystem) before, also an annular, surrounded by the heater and rotating about the central axis of the device receiving surface for appropriately designed magazines and the conclusion against the outside atmosphere a working vessel.

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The invention will be explained in more detail with reference to drawings and examples and described in their application variants.

embodiments

Pig * 1 shows a general representation of the device as a hot wall reactor

Fig. 2 shows a general representation of the device as a cold wall reactor

Pig · 5 shows the gas supply and drive system

Pig. 4 shows the equipment variant liquid epitaxy device for the epitaxial growth of material from the liquid phase

Pig. 5 shows the equipment variant Liquidepitaxie-Schei ebe Verfahr s (tripod magazine)

Pig. 6 shows the equipment variant Liquid epitaxy immersion method

Pig · 7 shows the equipment variant gas phase epitaxy A B compounds, silicon epitaxy, gas phase diffusion, planar technology, oxidation, etching

example 1

According to Pig. 1 and 2, the arrangement consists of a horizontally disposed and annularly closed heating device with the upper part 1 and the lower part 2. The concentrically arranged heater 3 »4 · and 5 are used for media preheating or to realize one or more additional heating zones. With this arrangement, constant radiation conditions are achieved over the entire furnace length so that the usable length becomes equal to the furnace length.

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The receiving surface 6 for magazines with elements to be treated follows the arrangement of the heater, has a circular ring shape and rotates with the support tube 7 about the central axis of the device.

In this way, local temperature differences of different peripheral points of the heating device are reduced to the magnitude of the control fluctuations by the thermal inertia of the entire insert mass, and the use is less complicated, faster, slower. non-thermal heating devices (resistance heaters, radiant heaters), which also allow large temporal temperature gradients.

Different temperature conditions as a function of the position of the starting material thus do not exist. Radial temperature gradients across the substrate disks do not exceed the values of linear tube furnaces due to the adapted shape. The batch capacity thus becomes a function of the diameter of the device.

The working space is formed by two bell-shaped vessels placed one above the other. In this case, the inner smaller vessel 8 always remains in its position, while the outer vessel 9 by means of a lifting device (not shown) for loading and cleaning including the heaters 1 and 5 can be raised. The work space is thus fully accessible.

The introduction of the carrier rotation 10, the introduction of differential movements 11 of the magazine parts against each other _φ - rotatory and / or vertical - and the media supply. take place in the region of the central axis of the lower part of the working vessel by means of the arrangement 12.

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Stabilization of the long rotor system takes place with the graphite bearing rings 14 and 15

The discharged gaseous media pass through the outer space of the two vessels through the Aüfnahmeplatte 15 in the exhaust pipe.

All required seals are outside the temperature-stressed areas.

Process-related additional equipment can be used as required (source vessels, gas-conducting facilities, shielding).

The arrangement of elements to be treated, preferably of substrate disks, can take place in succession due to the isothermal effect of the overall arrangement and the radial gas supply in all gas processes. In liquid processes, the order is made according to the procedure. In principle, highest packing densities can be achieved as a prerequisite for mass work processes.

In Fig. 2 (cold wall reactor) are only the matched heaters (preferably quartz emitters) inside the reactor, the polished inside of the double-walled working vessels serves as a radiation reflector. The gap 16 is traversed by the coolant.

Example 2

Fig. 3 shows the media supply and drive system in a comprehensive variant, which can be simplified depending on the intended use.

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The base body 1 is attached to the receiving plate of the entire device and vacuum-tight connected by means of a gland-like screw 2 on the central tube 3 of the inner part of the working vessel. The media feeds 4 to? are connected by means of a special cutting ring system with the main body. The inner body 8 carries on the turn firmly clamped tube 9, the receiving surface for the elements to be treated and performs the main rotation. The inner part 10 serves to initiate the differential movements of magazine parts (secondary rotation and / or stroke), which are introduced with the clamped double tube 11.

A task designed and coded drive system (not shown) is attached to the lower end of the assembly. The media routes are by means of rotary and sliding bushings against each other and against Außenatmo-. sphere sealed. The media are fed separately until entry into the hot section of the reactor. "To carry out centrifugal processes, a ball bearing 12 and 15 is provided for the main rotor.

The work vessels, the carrier and feed elements are preferably made of quartz or high-alloy steel (X5CrNiMo 18.9) 1, the media supply and drive system made of high-alloy steel (X ^ CrNiMo 18.9) and the sealing elements made of rubber plutonium (Viton).

Example 3

FIG. 4 shows the use of a device for a liquid epitaxy variant for all layer structures.

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Advantageous effect of the multiple K ^ purging currents, the .Magazine and substrate discs from the high-temperature-loaded wall of the quartz vessel shield (transition, of silicon and 0 ₂ diffusion).

With a working vessel diameter of 500 mm, the batch capacity of this device is about 50 mm diameter discs.

Example 4

FIG. 5 shows the device for carrying out the sliding variant of the 3-times magazine liquid epitaxy method.

The double tube 1 receives in the upper part as a driver .An adapted geometry and loses its puncture as a gas supply. The inserted quartz rods 3 4 and 5 form a positive connection to the slide cassettes 6, 7 and 8. The substrate holders 9 10 and 11 are loaded in layers with substrates 12 and fixed on the receiving surface.

In the media supply and drive system of FIG. 3, the media port 5 remain open, and the inner part 10 is fixed in its appropriate height in its appropriate height (not shown). ·

With a working vessel diameter of 500 mm, the batch capacity of this device is about 60 discs of 50 mm diameter (single-layer epitaxy), with disc diameters of 80 mm being possible.

Example 5

Figure 6 illustrates the device for carrying out the immersion variant of the LiquidVerfahrens. The inner double tube 1 receives above an adapted geometry for suspending the tilted at 45 ° slices 2. The immersion vessel. 3 is fixed on the receiving surface.

In monolayer epitaxy, about 120 discs can be coated simultaneously and the drive journal for secondary rotation is fixed in suitable manner to the main rotation.

In multilayer epitaxy, the batch capacity is calculated as the quotient of 120 and the number of layer components. All three motion systems are needed.

Example 6. ,

FIG. 7 illustrates the device for vapor phase epitaxy of TTT V

A ^x B compounds.

Kfebenrotation and lifting movement are fixed. Reactants and substrates are again advantageously shielded from the quartz wall and the exterior spaces are flushed with H ₂ . The supply of corrosive and highly toxic media, such as HCl, arsine or phosphine-7 / acid mixtures take place in Hedienzufuhr- and drive system according to Pig. 3 at the terminal 5; HCl and hydrogen are fed at 6. Thus, the feed-in parts of the cor-

• 25 rosy and highly toxic media on the rotary feedthrough from ports 4 and 7 with hydrogen guide additionally shielded from the outside.

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The adjustability of the thermodynamic equilibrium in gas phase epitaying systems u. a. for A B compounds for defined separation is secured by the separately controllable heating zones for GaCl zone, mixing zone and separation zone. The arrangement shown also meets the gas kinetic requirements.

Again, a coating of about 120 slices per batch is possible, with the disc diameter can be about 80 mm. -.

The one in Pig. 7 arrangement shown with the same magazine at T / eiterer simplification (without additional heating zones and source vessel) z. Directly for silicon epitaxy, diffusion, planar processes, oxidation and etching processes, when the appropriate reactants are fed.

The variants described so far require, in addition to the respectively adapted magazine, only minor modifications of the basic device (according to Pig. 1, 2, 3) in the upper part of the double tube 11 from FIG.

The joint reactor moretrics enables further basic realization strategies:

a) Development of a universal system type with

- universal reactor system including accessories

- universal media supply system and

- universal control system with exchangeable process programmer (including temperature program).

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b) Use of universal systems with changing product spectrum and interchangeable programmer or

c) Use of single-purpose systems with a constant production spectrum, ignoring unneeded parts or assemblies with the same system geometry.

Further disk processes, such as chemical vapor deposition, vacuum evaporation techniques u. a., can also be integrated into the type of plant shown # *

The usual cost-intensive special machine construction derar- • tiger operating facilities with purpose-related development. Development, constructive processing and custom-made can be replaced by a cost-effective mass production according to the invention in crucial improvement of the process parameters (purity, temperature stability, batch number) ·

Claims (1)

2123.50-1 * - invention claim 1 _# Apparatus for carrying out predominantly thermal work processes, in particular in the semiconductor industry, characterized in that the heating device wholly or partially surrounds the work surface in the form of a toroidally curved tube, 2 »Device according to item 1, characterized in that the vertical main axis of the system concentric heating zones can be realized * 3 · Device according to items 1 and 2, characterized in that the geometry of the receiving surface for magazines and / or elements to be processed is a closed, horizontal circular or annular surface « 4 # Apparatus according to items 1 to 3 »characterized in that the length of the temperature-constant zone corresponds to the length of the oven« 5 # Device according to points 1 to 4, characterized in that the minimization of the spatial temperature tolerances for the elements to be processed along the annulus of the working surface down to the size of the control variations by means of rotational movement of the working surface around the central vertical axis of the device S ₀ Device according to point 1 to 5> characterized in that the use of a circular magazine in one piece, the circular juxtaposition of individual magazines or a disc-shaped arrangement are possible · -U- 212350 7 # Device according to items 1 to 6, characterized in that the working space is closed by an adapted two-part, vertically fully open working vessel, preferably made of quartz or other resistant materials, against the outside atmosphere, the seals are outside the "temperature-stressed areas and the can be designed as * hot or cold wall reactor « Characterized in that the introduction of the rotational movement of the receiving surface, the movement of magazine parts against each other, the movement of other procedural devices and the introduction. the media can be made across the central vertical axis of the device and outside the , temperature-loaded areas are introduced and sealed against the atmosphere. 9 «Apparatus according to items 1 to 8, characterized by the fact that the supply of media can take place anywhere in the apparatus« 10, device according to items 1 to 9> characterized in that any arrangement of process-related additional equipment can be made in and on the working vessel * ¹ 1 11 · Device according to items 1 to 10, characterized in that due to the temperature distribution and the arrangement conditions for achieving high packing densities to be processed disc-shaped elements are given to the successive arrangement. 21 Z 3 5 U 12 # Apparatus according to items 1 to 11, characterized in that the fixing of the elements to be processed can be effected by centrifugal force « 13 # Device according to items 1 to 12, characterized in that the usual in semiconductor technology • work process "operating pressure with liquid or gaseous reactants, protective or carrier gases, as well as sub Or, z _# B · I quidphasen epitaxy as a single or multiple epitaxy and for the production of multilayer structures of two or more components, the process of vapor phase epitaxy, diffusion, Planarprozesse, Oxidation and etching processes to a common working vessel and a common heating device as the basis of a modular system for mass work processes 14. Device according to items 1 to 13, characterized in that rapid heating devices with low thermal inertia can be used for all process variants, which allow temperature-stationary and / or temperature-time-dependent processes. 15 *. Apparatus according to point 3 and 5 to 12, characterized in that, with a corresponding modification of the working vessel with the same receiving geometry Plächheizer and other process-related additional equipment, ζ. Β, for chemical vapor deposition and vapor deposition techniques u # a ,, can be used · 2123 50 16 »device according to item 1 to 15t characterized in that occur with the reactor geometry according to the invention process improvements that allow to use a universal system type for the semiconductor industry and / or each process-related feasible modular system system instead of special and special facilities at significant cost reductions For this ....? ..... pages drawings