DD210771A5 - Belichtungsvorrichtung mittels eines strahls geladener teilchen - Google Patents

Belichtungsvorrichtung mittels eines strahls geladener teilchen Download PDF

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Publication number
DD210771A5
DD210771A5 DD83255305A DD25530583A DD210771A5 DD 210771 A5 DD210771 A5 DD 210771A5 DD 83255305 A DD83255305 A DD 83255305A DD 25530583 A DD25530583 A DD 25530583A DD 210771 A5 DD210771 A5 DD 210771A5
Authority
DD
German Democratic Republic
Prior art keywords
signals
beam position
position correction
size
circuit
Prior art date
Application number
DD83255305A
Other languages
German (de)
English (en)
Inventor
Hirotsugu Wada
Shunichi Sano
Mamoru Nakasuji
Ryoichi Yoshikawa
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Publication of DD210771A5 publication Critical patent/DD210771A5/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30455—Correction during exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
DD83255305A 1982-09-30 1983-09-30 Belichtungsvorrichtung mittels eines strahls geladener teilchen DD210771A5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57171377A JPS5961134A (ja) 1982-09-30 1982-09-30 荷電ビ−ム露光装置

Publications (1)

Publication Number Publication Date
DD210771A5 true DD210771A5 (de) 1984-06-20

Family

ID=15922046

Family Applications (1)

Application Number Title Priority Date Filing Date
DD83255305A DD210771A5 (de) 1982-09-30 1983-09-30 Belichtungsvorrichtung mittels eines strahls geladener teilchen

Country Status (5)

Country Link
US (1) US4647782A (fr)
EP (1) EP0105694B1 (fr)
JP (1) JPS5961134A (fr)
DD (1) DD210771A5 (fr)
DE (1) DE3376513D1 (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6180744A (ja) * 1984-09-27 1986-04-24 Hitachi Ltd イオンマイクロビ−ム装置
JPS6229135A (ja) * 1985-07-29 1987-02-07 Advantest Corp 荷電粒子ビ−ム露光方法及びこの方法を用いた荷電粒子ビ−ム露光装置
JPS62172724A (ja) * 1986-01-27 1987-07-29 Toshiba Corp 荷電ビ−ム露光方法
JPS62277724A (ja) * 1986-05-27 1987-12-02 Fujitsu Ltd 電子ビ−ム露光装置
JPH0622195B2 (ja) * 1987-02-26 1994-03-23 東芝機械株式会社 荷電ビ−ム描画装置
JP2614884B2 (ja) * 1988-02-04 1997-05-28 富士通株式会社 電子ビーム露光方法及びその装置
JPH0744143B2 (ja) * 1988-09-20 1995-05-15 株式会社日立製作所 電子線描画装置の外部磁気補正方法
JPH0722010B2 (ja) * 1989-09-28 1995-03-08 株式会社日立製作所 電子線描画装置
JP2625219B2 (ja) * 1989-10-23 1997-07-02 株式会社日立製作所 電子線描画装置
JP2788139B2 (ja) * 1991-09-25 1998-08-20 株式会社日立製作所 電子線描画装置
JP3173162B2 (ja) * 1992-08-20 2001-06-04 富士通株式会社 透過マスク板
JP3105670B2 (ja) * 1992-11-26 2000-11-06 富士通株式会社 荷電粒子ビーム露光装置及びその制御方法
JP3274212B2 (ja) * 1993-03-18 2002-04-15 株式会社日立製作所 電子線検出器及びそれを用いた電子線描画装置
US5546319A (en) * 1994-01-28 1996-08-13 Fujitsu Limited Method of and system for charged particle beam exposure
US5608215A (en) 1994-09-16 1997-03-04 Schlumberger Technology Corporation Method and apparatus for determining density of earth formations
JPH11149893A (ja) * 1997-11-18 1999-06-02 Sony Corp 電子ビーム描画装置および描画方法並びに半導体装置
DE19827819C2 (de) * 1998-06-17 2003-07-03 Equicon Software Gmbh Jena Verfahren zur Steuerung von Elektronenstrahl-Belichtungsanlagen mit Formstrahlprinzip
JP3940310B2 (ja) * 2002-04-04 2007-07-04 株式会社日立ハイテクノロジーズ 電子ビーム描画方法及び描画装置、並びにこれを用いた半導体製造方法
JP2006269545A (ja) * 2005-03-22 2006-10-05 Toshiba Corp 荷電ビーム露光装置、荷電ビーム露光方法、マスク製造方法および半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6051261B2 (ja) * 1976-05-26 1985-11-13 株式会社東芝 荷電粒子ビ−ム描画装置
JPS5412675A (en) * 1977-06-30 1979-01-30 Jeol Ltd Electon beam exposure method
DD134582A1 (de) * 1978-01-19 1979-03-07 Eberhard Hahn Verfahren und einrichtung zur justierung einer elektronenstrahlbearbeitungsanlage
JPS54128680A (en) * 1978-03-30 1979-10-05 Jeol Ltd Exposure method for electron rays
JPS5693318A (en) * 1979-12-10 1981-07-28 Fujitsu Ltd Electron beam exposure device
JPS56147437A (en) * 1980-04-17 1981-11-16 Fujitsu Ltd Electron beam exposure method
JPS58121625A (ja) * 1981-12-28 1983-07-20 Fujitsu Ltd 電子ビ−ム露光装置
US4469950A (en) * 1982-03-04 1984-09-04 Varian Associates, Inc. Charged particle beam exposure system utilizing variable line scan
JPS5932128A (ja) * 1982-08-18 1984-02-21 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置におけるビ−ム照射位置補正方法

Also Published As

Publication number Publication date
EP0105694B1 (fr) 1988-05-04
US4647782A (en) 1987-03-03
DE3376513D1 (en) 1988-06-09
EP0105694A3 (en) 1986-08-06
EP0105694A2 (fr) 1984-04-18
JPS5961134A (ja) 1984-04-07

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ENJ Ceased due to non-payment of renewal fee