DE1808618C3 - Verfahren zum tiegelfreien Zonenschmelzen eines Halbleiterkristallstabes - Google Patents
Verfahren zum tiegelfreien Zonenschmelzen eines HalbleiterkristallstabesInfo
- Publication number
- DE1808618C3 DE1808618C3 DE19681808618 DE1808618A DE1808618C3 DE 1808618 C3 DE1808618 C3 DE 1808618C3 DE 19681808618 DE19681808618 DE 19681808618 DE 1808618 A DE1808618 A DE 1808618A DE 1808618 C3 DE1808618 C3 DE 1808618C3
- Authority
- DE
- Germany
- Prior art keywords
- hydrogen
- protective gas
- pressure
- recipient
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000004857 zone melting Methods 0.000 title claims description 9
- 239000013078 crystal Substances 0.000 title claims 4
- 239000007789 gas Substances 0.000 claims description 25
- 239000001257 hydrogen Substances 0.000 claims description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims description 22
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008014 freezing Effects 0.000 claims description 2
- 238000007710 freezing Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims 17
- 239000001307 helium Substances 0.000 claims 4
- 229910052734 helium Inorganic materials 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 3
- 238000011109 contamination Methods 0.000 claims 2
- 238000004880 explosion Methods 0.000 claims 2
- 239000000155 melt Substances 0.000 claims 2
- 229910052756 noble gas Inorganic materials 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- YCANCZRRZBHLEN-UHFFFAOYSA-N [N].O Chemical compound [N].O YCANCZRRZBHLEN-UHFFFAOYSA-N 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 210000001787 dendrite Anatomy 0.000 claims 1
- 230000002349 favourable effect Effects 0.000 claims 1
- 230000035784 germination Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 230000007935 neutral effect Effects 0.000 claims 1
- 150000002835 noble gases Chemical class 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH298568A CH466237A (de) | 1968-02-29 | 1968-02-29 | Verfahren und Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
| CH804368 | 1968-05-30 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1808618A1 DE1808618A1 (de) | 1969-09-04 |
| DE1808618B2 DE1808618B2 (de) | 1974-03-21 |
| DE1808618C3 true DE1808618C3 (de) | 1974-10-17 |
Family
ID=25691891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19681808618 Expired DE1808618C3 (de) | 1968-02-29 | 1968-11-13 | Verfahren zum tiegelfreien Zonenschmelzen eines Halbleiterkristallstabes |
Country Status (8)
| Country | Link |
|---|---|
| AT (1) | AT300040B (da) |
| BE (1) | BE728975A (da) |
| DE (1) | DE1808618C3 (da) |
| DK (1) | DK125743B (da) |
| ES (1) | ES364223A1 (da) |
| FR (1) | FR2002885A1 (da) |
| GB (1) | GB1167490A (da) |
| NL (1) | NL6902524A (da) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2579953A (en) * | 1951-02-13 | 1951-12-25 | Naomi M Morris | Adjustable shoe gripper |
-
1968
- 1968-11-13 DE DE19681808618 patent/DE1808618C3/de not_active Expired
-
1969
- 1969-01-28 AT AT83269A patent/AT300040B/de not_active IP Right Cessation
- 1969-02-07 DK DK65569A patent/DK125743B/da unknown
- 1969-02-18 NL NL6902524A patent/NL6902524A/xx unknown
- 1969-02-26 BE BE728975D patent/BE728975A/xx unknown
- 1969-02-26 FR FR6905044A patent/FR2002885A1/fr not_active Withdrawn
- 1969-02-28 GB GB1098369A patent/GB1167490A/en not_active Expired
- 1969-02-28 ES ES364223A patent/ES364223A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1808618A1 (de) | 1969-09-04 |
| FR2002885A1 (da) | 1969-10-31 |
| DE1808618B2 (de) | 1974-03-21 |
| GB1167490A (en) | 1969-10-15 |
| NL6902524A (da) | 1969-09-02 |
| AT300040B (de) | 1972-07-10 |
| DK125743B (da) | 1973-04-30 |
| ES364223A1 (es) | 1971-02-16 |
| BE728975A (da) | 1969-08-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E771 | Valid patent as to the heymanns-index 1977, willingness to grant licences | ||
| 8339 | Ceased/non-payment of the annual fee |