DE3379059D1 - Organometallic chemical vapour deposition of films - Google Patents

Organometallic chemical vapour deposition of films

Info

Publication number
DE3379059D1
DE3379059D1 DE8383305383T DE3379059T DE3379059D1 DE 3379059 D1 DE3379059 D1 DE 3379059D1 DE 8383305383 T DE8383305383 T DE 8383305383T DE 3379059 T DE3379059 T DE 3379059T DE 3379059 D1 DE3379059 D1 DE 3379059D1
Authority
DE
Germany
Prior art keywords
films
vapour deposition
chemical vapour
organometallic chemical
organometallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383305383T
Other languages
English (en)
Inventor
Brian Cockayne
Richard John Mostyn Griffiths
Peter John Wright
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Application granted granted Critical
Publication of DE3379059D1 publication Critical patent/DE3379059D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
DE8383305383T 1982-10-19 1983-09-14 Organometallic chemical vapour deposition of films Expired DE3379059D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8229830 1982-10-19

Publications (1)

Publication Number Publication Date
DE3379059D1 true DE3379059D1 (en) 1989-03-02

Family

ID=10533690

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383305383T Expired DE3379059D1 (en) 1982-10-19 1983-09-14 Organometallic chemical vapour deposition of films

Country Status (6)

Country Link
US (1) US4509997A (de)
EP (1) EP0106537B1 (de)
JP (1) JPS5992905A (de)
CA (1) CA1212873A (de)
DE (1) DE3379059D1 (de)
GB (1) GB2130189B (de)

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JPS60215596A (ja) * 1984-04-09 1985-10-28 Sumitomo Chem Co Ltd 有機金属熱分解気相エピタキシヤル成長法
GB8428032D0 (en) * 1984-11-06 1984-12-12 Secr Defence Growth of crystalline layers
US4594264A (en) * 1984-11-20 1986-06-10 Hughes Aircraft Company Method for forming gallium arsenide from thin solid films of gallium-arsenic complexes
US5178904A (en) * 1985-02-16 1993-01-12 Canon Kabushiki Kaisha Process for forming deposited film from a group II through group VI metal hydrocarbon compound
US4772486A (en) * 1985-02-18 1988-09-20 Canon Kabushiki Kaisha Process for forming a deposited film
JPS61260622A (ja) * 1985-05-15 1986-11-18 Res Dev Corp Of Japan ＧａＡｓ単結晶薄膜の成長法
JPS62101026A (ja) * 1985-10-26 1987-05-11 Shin Etsu Chem Co Ltd 不純物拡散源
JP2566914B2 (ja) * 1985-12-28 1996-12-25 キヤノン株式会社 薄膜半導体素子及びその形成法
US4920068A (en) * 1986-04-02 1990-04-24 American Cyanamid Company Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
US4828938A (en) * 1986-04-11 1989-05-09 Hughes Aircraft Company Method for depositing materials containing tellurium and product
GB8609190D0 (en) * 1986-04-15 1986-05-21 British Telecomm Semiconductor devices
US4886683A (en) * 1986-06-20 1989-12-12 Raytheon Company Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
DE3631469A1 (de) * 1986-09-16 1988-03-17 Merck Patent Gmbh Metallorganische verbindungen
US4728581A (en) * 1986-10-14 1988-03-01 Rca Corporation Electroluminescent device and a method of making same
US5204283A (en) * 1986-12-12 1993-04-20 Sharp Kabushiki Kaisha Method of growth II-VI semiconducting compounds
US4804638A (en) * 1986-12-18 1989-02-14 Raytheon Company Metalorganic chemical vapor deposition growth of Group II-IV semiconductor materials having improved compositional uniformity
CA1319587C (en) * 1986-12-18 1993-06-29 William Hoke Metalorganic chemical vapor depositing growth of group ii-vi semiconductor materials having improved compositional uniformity
US5047565A (en) * 1987-10-14 1991-09-10 Board Of Regents, The University Of Texas System Mononuclear and multinuclear phosphido, arsenido, and stibido complexes of aluminum, gallium and indium
EP0331448A3 (de) * 1988-02-29 1990-10-31 National Research Development Corporation Bildung von Aluminium-Nitride-Filmen
US4904337A (en) * 1988-06-06 1990-02-27 Raytheon Company Photo-enhanced pyrolytic MOCVD growth of group II-VI materials
GB8821116D0 (en) * 1988-09-08 1989-11-08 Barr & Stroud Ltd Infra-red transmitting optical components and optical coatings therefor
US4999223A (en) * 1990-02-22 1991-03-12 Cvd Incorporated Chemical vapor deposition and chemicals with diarsines and polyarsines
JP2686859B2 (ja) * 1991-04-18 1997-12-08 国際電信電話株式会社 ｎ形のＩＩ−ＶＩ族化合物半導体を結晶成長する方法
JP3263964B2 (ja) * 1992-01-31 2002-03-11 富士通株式会社 半導体装置形成用結晶とその製造方法
JP3395318B2 (ja) * 1994-01-07 2003-04-14 住友化学工業株式会社 ３−５族化合物半導体結晶の成長方法
AUPO663597A0 (en) * 1997-05-06 1997-05-29 Unisearch Limited Fabrication of zinc oxide films in non-planar substrates and the use thereof
US6743473B1 (en) * 2000-02-16 2004-06-01 Applied Materials, Inc. Chemical vapor deposition of barriers from novel precursors
US6587097B1 (en) 2000-11-28 2003-07-01 3M Innovative Properties Co. Display system
CN110606502A (zh) * 2019-10-16 2019-12-24 江苏巨珩新材料科技有限公司 一种具有光催化协同效应的自清洁表面的制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492175A (en) * 1965-12-17 1970-01-27 Texas Instruments Inc Method of doping semiconductor material
US3462323A (en) * 1966-12-05 1969-08-19 Monsanto Co Process for the preparation of compound semiconductors
US3637320A (en) * 1968-12-31 1972-01-25 Texas Instruments Inc Coating for assembly of parts
US4368098A (en) * 1969-10-01 1983-01-11 Rockwell International Corporation Epitaxial composite and method of making
US3922475A (en) * 1970-06-22 1975-11-25 Rockwell International Corp Process for producing nitride films
US4066481A (en) * 1974-11-11 1978-01-03 Rockwell International Corporation Metalorganic chemical vapor deposition of IVA-IVA compounds and composite
US4214926A (en) * 1976-07-02 1980-07-29 Tdk Electronics Co., Ltd. Method of doping IIb or VIb group elements into a boron phosphide semiconductor
GB1600283A (en) * 1977-07-05 1981-10-14 Biomechanics Ltd Apparatus for anaerobic digestion of biodegradable waste material
GB1600286A (en) * 1977-07-19 1981-10-14 Secr Defence Doping of group iii-v semiconductor materials
FR2403646A1 (fr) * 1977-09-16 1979-04-13 Anvar Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v
US4247359A (en) * 1978-10-30 1981-01-27 Honeywell Inc. Preparation of epitaxial rare earth thin films

Also Published As

Publication number Publication date
GB2130189B (en) 1986-09-10
JPS5992905A (ja) 1984-05-29
GB2130189A (en) 1984-05-31
GB8327758D0 (en) 1983-11-16
EP0106537A3 (en) 1986-08-13
US4509997A (en) 1985-04-09
CA1212873A (en) 1986-10-21
EP0106537A2 (de) 1984-04-25
EP0106537B1 (de) 1989-01-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee