DE60003639D1 - Hitzeschild für eine kristallziehungsvorrichtung - Google Patents

Hitzeschild für eine kristallziehungsvorrichtung

Info

Publication number
DE60003639D1
DE60003639D1 DE60003639T DE60003639T DE60003639D1 DE 60003639 D1 DE60003639 D1 DE 60003639D1 DE 60003639 T DE60003639 T DE 60003639T DE 60003639 T DE60003639 T DE 60003639T DE 60003639 D1 DE60003639 D1 DE 60003639D1
Authority
DE
Germany
Prior art keywords
heat shield
drawing device
crystal drawing
crystal
shield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60003639T
Other languages
English (en)
Other versions
DE60003639T2 (de
Inventor
Lee Ferry
Yasuhiro Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE60003639D1 publication Critical patent/DE60003639D1/de
Publication of DE60003639T2 publication Critical patent/DE60003639T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60003639T 1999-02-26 2000-02-02 Hitzeschild für eine kristallziehungsvorrichtung Expired - Lifetime DE60003639T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/258,478 US6197111B1 (en) 1999-02-26 1999-02-26 Heat shield assembly for crystal puller
US258478 1999-02-26
PCT/US2000/002781 WO2000050671A1 (en) 1999-02-26 2000-02-02 Heat shield assembly for crystal puller

Publications (2)

Publication Number Publication Date
DE60003639D1 true DE60003639D1 (de) 2003-08-07
DE60003639T2 DE60003639T2 (de) 2004-02-05

Family

ID=22980716

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60003639T Expired - Lifetime DE60003639T2 (de) 1999-02-26 2000-02-02 Hitzeschild für eine kristallziehungsvorrichtung

Country Status (9)

Country Link
US (1) US6197111B1 (de)
EP (1) EP1159470B1 (de)
JP (1) JP2002538064A (de)
KR (1) KR100687511B1 (de)
CN (1) CN1246506C (de)
DE (1) DE60003639T2 (de)
MY (1) MY133042A (de)
TW (1) TWI243217B (de)
WO (1) WO2000050671A1 (de)

Families Citing this family (37)

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US6503594B2 (en) * 1997-02-13 2003-01-07 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects and slip
JP3709494B2 (ja) * 1999-02-26 2005-10-26 株式会社Ｓｕｍｃｏ シリコン単結晶引上げ装置の熱遮蔽部材
KR100745311B1 (ko) * 1999-09-23 2007-08-01 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 냉각 속도를 제어함으로써 단결정 실리콘을 성장시키는초크랄스키 방법
KR100378184B1 (ko) * 1999-11-13 2003-03-29 삼성전자주식회사 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러
US6869477B2 (en) * 2000-02-22 2005-03-22 Memc Electronic Materials, Inc. Controlled neck growth process for single crystal silicon
MY131022A (en) * 2000-09-29 2007-07-31 Samsung Electronics Co Ltd Silicon wafers having controlled distribution of defects, and methods of preparing the same
US6482263B1 (en) * 2000-10-06 2002-11-19 Memc Electronic Materials, Inc. Heat shield assembly for crystal pulling apparatus
US6846539B2 (en) 2001-01-26 2005-01-25 Memc Electronic Materials, Inc. Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
US6579362B2 (en) * 2001-03-23 2003-06-17 Memc Electronic Materials, Inc. Heat shield assembly for crystal puller
WO2003021011A1 (en) * 2001-08-29 2003-03-13 Memc Electronic Materials, Inc. Process for eliminating neck dislocations during czochralski crystal growth
US6866713B2 (en) * 2001-10-26 2005-03-15 Memc Electronic Materials, Inc. Seed crystals for pulling single crystal silicon
US7077905B2 (en) * 2002-09-13 2006-07-18 Toshiba Ceramics Co., Ltd. Apparatus for pulling a single crystal
US6797062B2 (en) * 2002-09-20 2004-09-28 Memc Electronic Materials, Inc. Heat shield assembly for a crystal puller
US20070169700A1 (en) * 2006-01-26 2007-07-26 Gert-Jan Sniders Sensing system and method for determining the alignment of a substrate holder in a batch reactor
RU2355834C1 (ru) * 2007-12-07 2009-05-20 Государственное научное учреждение "Институт химических проблем микроэлектроники" (ГНУ ИХПМ) Устройство для выращивания монокристаллов кремния методом чохральского
RU2382121C1 (ru) * 2008-12-03 2010-02-20 Институт химических проблем микроэлектроники (ИХПМ) Устройство для выращивания монокристаллов кремния методом чохральского
CN101665977B (zh) * 2009-09-21 2011-10-19 浙江碧晶科技有限公司 一种用于拉晶炉的热屏蔽装置
WO2011103740A1 (zh) * 2010-02-23 2011-09-01 上海汉虹精密机械有限公司 单晶炉装置
KR101275418B1 (ko) * 2010-03-16 2013-06-14 주식회사 엘지실트론 단결정 잉곳 제조방법 및 이에 의해 제조된 웨이퍼
CN102758258B (zh) * 2012-06-20 2016-01-13 张永芳 单晶炉用伸展式热屏蔽器
CN102732949A (zh) * 2012-06-21 2012-10-17 芜湖昊阳光能股份有限公司 一种石墨热场的导流筒结构
JP5904079B2 (ja) * 2012-10-03 2016-04-13 信越半導体株式会社 シリコン単結晶育成装置及びシリコン単結晶育成方法
KR101494521B1 (ko) 2013-04-30 2015-02-17 웅진에너지 주식회사 추락방지형 열차단구조체
CN105316759A (zh) * 2014-07-02 2016-02-10 安徽旭特电子科技有限公司 一种带有内部水冷单晶炉用涂层热屏
US10358740B2 (en) 2014-07-25 2019-07-23 Corner Star Limited Crystal growing systems and methods including a passive heater
DE102014226297A1 (de) * 2014-12-17 2016-06-23 Sgl Carbon Se Doppelwandiger Graphit-Trichter
CN108018600A (zh) * 2016-10-28 2018-05-11 上海新昇半导体科技有限公司 单晶生长炉热屏及其制造方法
JP6304424B1 (ja) * 2017-04-05 2018-04-04 株式会社Sumco 熱遮蔽部材、単結晶引き上げ装置および単結晶シリコンインゴットの製造方法
CN111172585A (zh) 2018-11-12 2020-05-19 上海新昇半导体科技有限公司 一种单晶生长炉的反射屏及单晶生长炉
CN111270301A (zh) * 2018-12-04 2020-06-12 上海新昇半导体科技有限公司 一种晶体生长炉的导流筒和晶体生长炉
CN112680793B (zh) * 2019-10-17 2022-02-01 上海新昇半导体科技有限公司 一种半导体晶体生长装置
CN112680788B (zh) * 2019-10-17 2022-02-01 上海新昇半导体科技有限公司 一种半导体晶体生长装置
CN110965118B (zh) * 2019-12-25 2022-04-15 西安奕斯伟材料科技有限公司 一种导流筒装置和拉晶炉
CN111893561B (zh) * 2020-07-01 2021-08-17 中国科学院上海微系统与信息技术研究所 一种用于单晶硅生长炉的复合隔热结构及单晶硅生长炉
CN111763985B (zh) * 2020-07-01 2021-10-19 中国科学院上海微系统与信息技术研究所 一种用于单晶生产炉的热屏结构及单晶生产炉
CN111893558B (zh) * 2020-07-01 2021-08-17 中国科学院上海微系统与信息技术研究所 一种用于单晶硅生长炉的薄膜隔热片及单晶硅生长炉
US11873575B2 (en) * 2020-11-30 2024-01-16 Globalwafers Co., Ltd. Ingot puller apparatus having heat shields with voids therein

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DE3709178A1 (de) 1987-03-20 1988-09-29 Sorg Gmbh & Co Kg Einlegevorrichtung fuer glasschmelzoefen
US4981549A (en) 1988-02-23 1991-01-01 Mitsubishi Kinzoku Kabushiki Kaisha Method and apparatus for growing silicon crystals
US5264189A (en) 1988-02-23 1993-11-23 Mitsubishi Materials Corporation Apparatus for growing silicon crystals
JP2709310B2 (ja) 1989-11-11 1998-02-04 住友シチックス株式会社 単結晶引上げ装置
JP2755452B2 (ja) 1989-12-04 1998-05-20 新日本製鐵株式会社 シリコン単結晶の引上げ装置
JPH06102590B2 (ja) 1990-02-28 1994-12-14 信越半導体株式会社 Ｃｚ法による単結晶ネック部育成自動制御方法
JPH03120570U (de) * 1990-03-24 1991-12-11
JP2601930B2 (ja) 1990-03-29 1997-04-23 信越半導体株式会社 単結晶ネツク部直径制御方法及び装置
JP2878794B2 (ja) 1990-06-29 1999-04-05 東芝セラミックス株式会社 単結晶引上げ装置
US5363796A (en) * 1991-02-20 1994-11-15 Sumitomo Metal Industries, Ltd. Apparatus and method of growing single crystal
JP3016897B2 (ja) 1991-03-20 2000-03-06 信越半導体株式会社 シリコン単結晶の製造方法及び装置
EP0591525B1 (de) * 1991-06-24 1997-09-03 Komatsu Electronic Metals Co., Ltd Vorrichtung zum ziehen eines einkristalls
DE4231162C2 (de) 1992-09-17 1996-03-14 Wacker Siltronic Halbleitermat Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen
US5414927A (en) * 1993-03-30 1995-05-16 Union Oil Co Furnace elements made from graphite sheets
JPH06340490A (ja) * 1993-05-31 1994-12-13 Sumitomo Sitix Corp シリコン単結晶製造装置
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DE19503357A1 (de) * 1995-02-02 1996-08-08 Wacker Siltronic Halbleitermat Vorrichtung zur Herstellung eines Einkristalls
JP3634867B2 (ja) 1995-12-08 2005-03-30 信越半導体株式会社 単結晶製造装置および製造方法
JP3844536B2 (ja) * 1996-01-19 2006-11-15 コマツ電子金属株式会社 単結晶引上装置
JP4097729B2 (ja) * 1996-05-22 2008-06-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造装置
JP3653647B2 (ja) * 1996-05-31 2005-06-02 イビデン株式会社 シリコン単結晶引き上げ装置用の保温筒
US5824152A (en) * 1996-07-09 1998-10-20 Komatsu Electronic Metals Co., Ltd. Semiconductor single-crystal pulling apparatus
JPH10139581A (ja) * 1996-09-10 1998-05-26 Toyo Tanso Kk 単結晶引上げ装置用高温部材
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US5922127A (en) 1997-09-30 1999-07-13 Memc Electronic Materials, Inc. Heat shield for crystal puller

Also Published As

Publication number Publication date
WO2000050671A1 (en) 2000-08-31
CN1341168A (zh) 2002-03-20
JP2002538064A (ja) 2002-11-12
DE60003639T2 (de) 2004-02-05
EP1159470A1 (de) 2001-12-05
CN1246506C (zh) 2006-03-22
KR20010102396A (ko) 2001-11-15
US6197111B1 (en) 2001-03-06
MY133042A (en) 2007-10-31
TWI243217B (en) 2005-11-11
EP1159470B1 (de) 2003-07-02
KR100687511B1 (ko) 2007-02-27

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