DE60326843D1 - Chreinen siliciumcarbid-kristallen - Google Patents

Chreinen siliciumcarbid-kristallen

Info

Publication number
DE60326843D1
DE60326843D1 DE60326843T DE60326843T DE60326843D1 DE 60326843 D1 DE60326843 D1 DE 60326843D1 DE 60326843 T DE60326843 T DE 60326843T DE 60326843 T DE60326843 T DE 60326843T DE 60326843 D1 DE60326843 D1 DE 60326843D1
Authority
DE
Germany
Prior art keywords
silicon carbide
crystal
point defects
chinery
carbide crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60326843T
Other languages
English (en)
Inventor
Jason Ronald Jenny
David Phillip Malta
Hudson Mcdonald Hobgood
Stephan Georg Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of DE60326843D1 publication Critical patent/DE60326843D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Ceramic Products (AREA)
DE60326843T 2002-06-24 2003-06-10 Chreinen siliciumcarbid-kristallen Expired - Lifetime DE60326843D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/064,232 US6814801B2 (en) 2002-06-24 2002-06-24 Method for producing semi-insulating resistivity in high purity silicon carbide crystals
PCT/US2003/018068 WO2004001836A1 (en) 2002-06-24 2003-06-10 Method for producing semi-insulating resistivity in high purity silicon carbide crystals

Publications (1)

Publication Number Publication Date
DE60326843D1 true DE60326843D1 (de) 2009-05-07

Family

ID=29731606

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60326843T Expired - Lifetime DE60326843D1 (de) 2002-06-24 2003-06-10 Chreinen siliciumcarbid-kristallen

Country Status (11)

Country Link
US (3) US6814801B2 (de)
EP (1) EP1516361B1 (de)
JP (1) JP4670006B2 (de)
KR (1) KR101024328B1 (de)
CN (1) CN100356524C (de)
AT (1) ATE426916T1 (de)
AU (1) AU2003237489A1 (de)
CA (1) CA2485594A1 (de)
DE (1) DE60326843D1 (de)
TW (1) TWI285404B (de)
WO (1) WO2004001836A1 (de)

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CN106757357B (zh) * 2017-01-10 2019-04-09 山东天岳先进材料科技有限公司 一种高纯半绝缘碳化硅衬底的制备方法
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CN109338463B (zh) * 2018-10-16 2020-08-11 山东天岳先进材料科技有限公司 一种高纯碳化硅单晶衬底
CN109280965B (zh) * 2018-10-16 2020-03-24 山东天岳先进材料科技有限公司 一种掺杂少量钒的高质量半绝缘碳化硅单晶及衬底
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CN113990752B (zh) * 2020-07-27 2025-08-19 环球晶圆股份有限公司 碳化硅材料的制备方法
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CN113073392A (zh) * 2021-03-31 2021-07-06 哈尔滨科友半导体产业装备与技术研究院有限公司 一种减少晶体热应力的处理方法
US12024794B2 (en) 2021-06-17 2024-07-02 Wolfspeed, Inc. Reduced optical absorption for silicon carbide crystalline materials
KR102780049B1 (ko) * 2023-11-10 2025-03-12 한국세라믹기술원 화학기상증착법을 이용하여 제조된 세라믹 기물을 원료로 하여 승화법으로 제조된 단결정 및 그 제조방법

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Also Published As

Publication number Publication date
US9059118B2 (en) 2015-06-16
KR101024328B1 (ko) 2011-03-23
JP4670006B2 (ja) 2011-04-13
ATE426916T1 (de) 2009-04-15
WO2004001836A1 (en) 2003-12-31
US20030233975A1 (en) 2003-12-25
US20090256162A1 (en) 2009-10-15
EP1516361A1 (de) 2005-03-23
AU2003237489A1 (en) 2004-01-06
CN1663033A (zh) 2005-08-31
US6814801B2 (en) 2004-11-09
TW200409245A (en) 2004-06-01
JP2005531145A (ja) 2005-10-13
EP1516361B1 (de) 2009-03-25
US20040206298A1 (en) 2004-10-21
CA2485594A1 (en) 2003-12-31
KR20050013113A (ko) 2005-02-02
TWI285404B (en) 2007-08-11
CN100356524C (zh) 2007-12-19

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