DE69504115D1 - Hitzebeständige, negativ-arbeitende Photoresistzusammensetzung, lichtempfindliches Substrat und Verfahren zur Herstellung eines negativen Musters - Google Patents

Hitzebeständige, negativ-arbeitende Photoresistzusammensetzung, lichtempfindliches Substrat und Verfahren zur Herstellung eines negativen Musters

Info

Publication number
DE69504115D1
DE69504115D1 DE69504115T DE69504115T DE69504115D1 DE 69504115 D1 DE69504115 D1 DE 69504115D1 DE 69504115 T DE69504115 T DE 69504115T DE 69504115 T DE69504115 T DE 69504115T DE 69504115 D1 DE69504115 D1 DE 69504115D1
Authority
DE
Germany
Prior art keywords
negative
making
heat resistant
photoresist composition
photosensitive substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69504115T
Other languages
English (en)
Other versions
DE69504115T2 (de
Inventor
Toshihiko Omote
Hirofumi Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Application granted granted Critical
Publication of DE69504115D1 publication Critical patent/DE69504115D1/de
Publication of DE69504115T2 publication Critical patent/DE69504115T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/107—Polyamide or polyurethane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y10S430/121—Nitrogen in heterocyclic ring

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69504115T 1994-03-29 1995-03-28 Hitzebeständige, negativ-arbeitende Photoresistzusammensetzung, lichtempfindliches Substrat und Verfahren zur Herstellung eines negativen Musters Expired - Lifetime DE69504115T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05860694A JP3709997B2 (ja) 1994-03-29 1994-03-29 耐熱性ネガ型フォトレジスト組成物および感光性基材、ならびにネガ型パターン形成方法

Publications (2)

Publication Number Publication Date
DE69504115D1 true DE69504115D1 (de) 1998-09-24
DE69504115T2 DE69504115T2 (de) 1998-12-24

Family

ID=13089189

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69504115T Expired - Lifetime DE69504115T2 (de) 1994-03-29 1995-03-28 Hitzebeständige, negativ-arbeitende Photoresistzusammensetzung, lichtempfindliches Substrat und Verfahren zur Herstellung eines negativen Musters

Country Status (4)

Country Link
US (1) US5665523A (de)
EP (1) EP0675409B1 (de)
JP (1) JP3709997B2 (de)
DE (1) DE69504115T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5851736A (en) * 1991-03-05 1998-12-22 Nitto Denko Corporation Heat-resistant photoresist composition, photosensitive substrate, and process for forming heat-resistant positive or negative pattern
DE4444864A1 (de) * 1994-12-16 1996-06-20 Bayer Ag Verwendung von 5-Acyl-1,4-dihydropyridinen
SG52916A1 (en) * 1996-02-13 1998-09-28 Nitto Denko Corp Circuit substrate circuit-formed suspension substrate and production method thereof
JPH1039510A (ja) * 1996-07-29 1998-02-13 Nitto Denko Corp ネガ型フォトレジスト組成物及びその利用
FR2757168B1 (fr) * 1996-12-12 1999-06-11 Hoechst Marion Roussel Inc Nouveaux derives de l'erythromycine, leur procede de preparation et leur application comme medicaments
JP2000112126A (ja) * 1998-10-01 2000-04-21 Nitto Denko Corp ネガ型フォトレジスト組成物
FR2807751B1 (fr) 2000-04-12 2005-05-20 Solvay Procede pour la preparation d'un hydro (chloro) fluoroalcane et catalyseur
JP2002148804A (ja) 2000-11-08 2002-05-22 Nitto Denko Corp 感光性樹脂組成物および回路基板
JP4687938B2 (ja) * 2001-09-13 2011-05-25 日立化成デュポンマイクロシステムズ株式会社 ネガ型感光性樹脂組成物、パターンの製造法及び電子部品
JP2003186192A (ja) * 2001-12-19 2003-07-03 Nitto Denko Corp 感光性樹脂組成物およびポリイミド樹脂
JP3947457B2 (ja) 2002-11-29 2007-07-18 日東電工株式会社 ポリイミド光導波路の製造方法
KR100944310B1 (ko) * 2003-01-24 2010-02-24 닛토덴코 가부시키가이샤 광 도파로의 제조 방법 및 광 디바이스의 접속 구조물
JP4256806B2 (ja) 2004-03-17 2009-04-22 日東電工株式会社 感光性樹脂組成物とその利用
JP2012063645A (ja) 2010-09-17 2012-03-29 Nitto Denko Corp 感光性樹脂組成物およびそれを用いた金属支持体付回路基板

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3179614A (en) * 1961-03-13 1965-04-20 Du Pont Polyamide-acids, compositions thereof, and process for their preparation
US3073784A (en) * 1959-07-02 1963-01-15 Du Pont Electrically conductive polymeric compositions
BE627626A (de) * 1962-01-26 1900-01-01
US3179630A (en) * 1962-01-26 1965-04-20 Du Pont Process for preparing polyimides by treating polyamide-acids with lower fatty monocarboxylic acid anhydrides
JPS5120679B2 (de) * 1973-07-18 1976-06-26
JPS5952822B2 (ja) * 1978-04-14 1984-12-21 東レ株式会社 耐熱性感光材料
US4242437A (en) * 1979-05-11 1980-12-30 Minnesota Mining And Manufacturing Company Photosensitized polyamic acids curable by exposure to actinic radiation
US4331705A (en) * 1979-05-11 1982-05-25 Minnesota Mining And Manufacturing Company Curing of polyamic acids or salts thereof by ultraviolet exposure
JPS606368B2 (ja) * 1979-08-01 1985-02-18 東レ株式会社 感光性ポリイミド前駆体
JPS59108031A (ja) * 1982-12-13 1984-06-22 Ube Ind Ltd 感光性ポリイミド
US4629777A (en) * 1983-05-18 1986-12-16 Ciba-Geigy Corporation Polyimides, a process for their preparation and their use
JPS59220730A (ja) * 1983-05-30 1984-12-12 Ube Ind Ltd 溶媒可溶性の感光性ポリイミド
JPS59231233A (ja) * 1983-06-10 1984-12-25 Toyoda Gosei Co Ltd 液封入防振装置
JPS59232122A (ja) * 1983-06-14 1984-12-26 Ube Ind Ltd 有機溶媒可溶性の感光性ポリイミド
JPS606729A (ja) * 1983-06-24 1985-01-14 Ube Ind Ltd 有機溶媒に可溶性の感光性ポリイミド
JPS6072925A (ja) * 1983-09-30 1985-04-25 Ube Ind Ltd 有機溶媒可溶性の感光性ポリイミド
DE3429615C1 (de) * 1984-08-11 1985-12-12 Du Pont de Nemours (Deutschland) GmbH, 4000 Düsseldorf Verfahren zur Erzeugung von aus Pulvern bestehenden Mustern
JPS6157620A (ja) * 1984-08-30 1986-03-24 Ube Ind Ltd 有機溶媒可溶性の感光性ポリイミド
DE58908012D1 (de) * 1989-03-20 1994-08-11 Siemens Ag Lichtempfindliches Gemisch.
DD287796A5 (de) * 1989-09-14 1991-03-07 Tech Hochschule C Schorlemmer Spektral sensibilisiertes photopolymerisierbares material
EP0502400B1 (de) * 1991-03-05 1997-09-17 Nitto Denko Corporation Hitzebeständige, positiv arbeitende Photoresistzusammensetzung, lichtempfindliches Substrat, und Verfahren zur Herstellung eines hitzebeständigen positiven Musters
JP3093055B2 (ja) * 1992-07-07 2000-10-03 日東電工株式会社 耐熱性ネガ型フォトレジスト組成物および感光性基材、ならびにネガ型パターン形成方法
JP2931143B2 (ja) * 1991-04-15 1999-08-09 日東電工株式会社 耐熱性ポジ型フォトレジスト組成物およびそれを用いた感光性基材ならびにパターン形成方法
KR940009571B1 (ko) * 1992-03-04 1994-10-15 삼성전자주식회사 번인소켓
JPH0643648A (ja) * 1992-07-22 1994-02-18 Nitto Denko Corp ポジ型フオトレジスト組成物、感光性絶縁膜およびパタ―ン形成方法

Also Published As

Publication number Publication date
JP3709997B2 (ja) 2005-10-26
DE69504115T2 (de) 1998-12-24
EP0675409B1 (de) 1998-08-19
US5665523A (en) 1997-09-09
EP0675409A1 (de) 1995-10-04
JPH07271034A (ja) 1995-10-20

Similar Documents

Publication Publication Date Title
DE69733393D1 (de) Übertragungsschicht und Verfahren zur Herstellung eines Musters
DE69504115D1 (de) Hitzebeständige, negativ-arbeitende Photoresistzusammensetzung, lichtempfindliches Substrat und Verfahren zur Herstellung eines negativen Musters
DE69531854D1 (de) Verfahren zur wiederholten abbildung eines maskenmusters auf einem substrat
DE69528611D1 (de) Verfahren zur Herstellung eines Halbleitersubstrates
DE69535381D1 (de) Masken zur Herstellung lithographischer Muster unter Verwendung schiefer Beleuchtung
DE69324000D1 (de) Lithographischer Träger und Verfahren zur Herstellung einer lithographischen Druckform
DE69323997D1 (de) Lithographischer Träger und Verfahren zur Herstellung einer lithographischen Druckform
DE69520327D1 (de) Verfahren zur Herstellung eines Resistmusters
DE69325893D1 (de) Lithographischer Träger und Verfahren zur Herstellung einer lithographischen Druckform
DE69433375D1 (de) Verfahren zur Herstellung eines Dünnschichtmusters
DE69928198D1 (de) Verfahren zur erzeugung eines überzugsfilms und überzugszusammensetzung
DE69636618D1 (de) Verfahren zur behandlung einer substratoberfläche und behandlungsmittel hierfür
DE69503285D1 (de) Diamantwafer und Verfahren zur Herstellung eines Diamantwafers
DE69520043D1 (de) Beschichtung, beschichtungszusammensetzung und verfahren zur herstellung einer beschichtung
DE69133544D1 (de) Vorrichtung zur Projektion eines Maskenmusters auf ein Substrat
DE69707635D1 (de) Zusammensetzung für Antireflexunterschichten und Verfahren zur Herstellung eines Resistmusters damit
DE69434837T8 (de) Verfahren zur Herstellung einer photolithographischen Maske
DE69616981D1 (de) Verfahren zur ätzung eines polysiliziummusters
DE69522992D1 (de) Verfahren zur Herstellung eines Widerstands
DE69130783D1 (de) Vorrichtung zur Projecktion eines Maskenmusters auf ein Substrat
DE69709584D1 (de) Lithographisches gerät zur step-und-scan übertragung eines maskenmusters
DE69832352D1 (de) Verfahren zur Herstellung von Vorrichtung unter Benutzung eines strahlungsempfindlichen Resistmaterials
DE69426409D1 (de) Phasenverschiebungsmaske, Verfahren zur Herstellung derselben und Belichtungsverfahren unter Verwendung einer solchen Phasenverschiebungsmaske
DE69702825D1 (de) Verfahren und Vorrichtung zur Fotolackbeschichtung eines Substrats
DE69819445D1 (de) Verfahren zur Herstellung eines Musters auf einem Substrat

Legal Events

Date Code Title Description
8364 No opposition during term of opposition