DK105596A - Fremgangsmåde og apparat til fremstilling af enkrystaller af silicium - Google Patents

Fremgangsmåde og apparat til fremstilling af enkrystaller af silicium Download PDF

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Publication number
DK105596A
DK105596A DK105596A DK105596A DK105596A DK 105596 A DK105596 A DK 105596A DK 105596 A DK105596 A DK 105596A DK 105596 A DK105596 A DK 105596A DK 105596 A DK105596 A DK 105596A
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DK
Denmark
Prior art keywords
silicon
single crystals
producing single
producing
crystals
Prior art date
Application number
DK105596A
Other languages
English (en)
Inventor
Erich Tomzig
Wolfgang Hensel
Reinhard Wolf
Original Assignee
Wacker Siltronic Halbleitermat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic Halbleitermat filed Critical Wacker Siltronic Halbleitermat
Publication of DK105596A publication Critical patent/DK105596A/da

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DK105596A 1995-10-12 1996-09-26 Fremgangsmåde og apparat til fremstilling af enkrystaller af silicium DK105596A (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1995138020 DE19538020A1 (de) 1995-10-12 1995-10-12 Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Silicium

Publications (1)

Publication Number Publication Date
DK105596A true DK105596A (da) 1997-04-13

Family

ID=7774670

Family Applications (1)

Application Number Title Priority Date Filing Date
DK105596A DK105596A (da) 1995-10-12 1996-09-26 Fremgangsmåde og apparat til fremstilling af enkrystaller af silicium

Country Status (3)

Country Link
JP (1) JPH09142988A (da)
DE (1) DE19538020A1 (da)
DK (1) DK105596A (da)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10137856B4 (de) 2001-08-02 2007-12-13 Siltronic Ag Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium
DE10204178B4 (de) 2002-02-01 2008-01-03 Siltronic Ag Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial
DE10220964B4 (de) * 2002-05-06 2006-11-02 Pv Silicon Forschungs- Und Produktions Ag Anordnung zur Herstellung von Kristallstäben mit definiertem Querschnitt und kolumnarer polykristalliner Struktur mittels tiegelfreier kontinuierlicher Kristallisation
DE102008038810B4 (de) * 2008-08-13 2012-03-01 Siltronic Ag Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Halbleitermaterial
DE102009051010B4 (de) * 2009-10-28 2012-02-23 Siltronic Ag Vorrichtung zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat
DE102009052745A1 (de) * 2009-11-11 2011-05-12 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat
DE102010006724B4 (de) * 2010-02-03 2012-05-16 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium unter Verwendung von geschmolzenem Granulat
DE102010021004A1 (de) * 2010-05-14 2011-11-17 Schmid Silicon Technology Gmbh Herstellung von monokristallinen Halbleiterwerkstoffen
JP5886831B2 (ja) * 2010-04-13 2016-03-16 シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング 単結晶半導体材料の生成
DE102011007149A1 (de) 2011-04-11 2012-10-11 Streicher Maschinenbau GmbH & Co. KG Verfahren und Vorrichtung zur Herstellung von Material mit mono- oder multikristalliner Struktur
DE102012215677B3 (de) * 2012-09-04 2013-10-10 Siltronic Ag Verfahren zum Herstellen eines Einkristalls aus Silizium
KR20150095761A (ko) * 2012-12-11 2015-08-21 헴로크세미컨덕터코포레이션 도핑된 규소의 형성 및 분석 방법
DE102014207149A1 (de) 2014-04-14 2015-10-29 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Einkristalls aus Silizium
DE102015215858B4 (de) * 2015-08-20 2019-01-24 Siltronic Ag Verfahren zur Wärmebehandlung von Granulat aus Silizium, Granulat aus Silizium und Verfahren zur Herstellung eines Einkristalls aus Silizium
CN105332062A (zh) * 2015-10-13 2016-02-17 江苏华盛天龙光电设备股份有限公司 一种用于单晶炉的出料系统
JP6634577B2 (ja) * 2017-01-05 2020-01-22 蒲池　豊 シリコン結晶の製造方法
CN110195254B (zh) * 2019-07-12 2022-08-12 中国电子科技集团公司第二十六研究所 一种适用于提拉法的线圈可移动式温场结构与单晶生长方法
JP7259722B2 (ja) * 2019-12-04 2023-04-18 株式会社Sumco 単結晶製造装置及び単結晶の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4106589C2 (de) * 1991-03-01 1997-04-24 Wacker Siltronic Halbleitermat Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski

Also Published As

Publication number Publication date
JPH09142988A (ja) 1997-06-03
DE19538020A1 (de) 1997-04-17

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AHB Application shelved due to non-payment