JPH09142988A - シリコン単結晶の生成方法及び装置 - Google Patents

シリコン単結晶の生成方法及び装置

Info

Publication number: JPH09142988A
Authority: JP; Japan
Prior art keywords: silicon; melting; single crystal; cap; seed crystal
Prior art date: 1995-10-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP26877596A

Other languages

English (en)

Japanese (ja)

Inventor

Erich Tomzig

エーリッヒ・トムツィヒ

Wolfgang Hensel

ヴォルフガング・ヘンゼル

Reinhard Wolf

ラインハルト・ヴォルフ

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Siltronic AG

Original Assignee

Wacker Siltronic AG

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-10-12

Filing date

1996-10-09

Publication date

1997-06-03

1996-10-09 Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG

1997-06-03 Publication of JPH09142988A publication Critical patent/JPH09142988A/ja

Status Pending legal-status Critical Current

Links

239000013078 crystal Substances 0.000 title claims abstract description 102
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 76
229910052710 silicon Inorganic materials 0.000 title claims abstract description 76
239000010703 silicon Substances 0.000 title claims abstract description 76
238000000034 method Methods 0.000 title abstract description 28
238000002844 melting Methods 0.000 claims abstract description 61
230000008018 melting Effects 0.000 claims abstract description 61
230000006698 induction Effects 0.000 claims abstract description 29
238000010438 heat treatment Methods 0.000 claims abstract description 28
239000007788 liquid Substances 0.000 claims abstract description 25
239000007787 solid Substances 0.000 claims abstract description 10
238000003860 storage Methods 0.000 claims description 17
239000000155 melt Substances 0.000 claims description 13
238000004519 manufacturing process Methods 0.000 claims description 8
238000004857 zone melting Methods 0.000 abstract description 2
239000011856 silicon-based particle Substances 0.000 description 8
239000002245 particle Substances 0.000 description 7
239000007791 liquid phase Substances 0.000 description 4
230000001681 protective effect Effects 0.000 description 4
239000007790 solid phase Substances 0.000 description 4
239000008187 granular material Substances 0.000 description 3
239000000463 material Substances 0.000 description 3
239000012071 phase Substances 0.000 description 3
239000010453 quartz Substances 0.000 description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
229910021419 crystalline silicon Inorganic materials 0.000 description 2
238000000151 deposition Methods 0.000 description 2
239000000428 dust Substances 0.000 description 2
229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
229910052581 Si3N4 Inorganic materials 0.000 description 1
238000004220 aggregation Methods 0.000 description 1
230000002776 aggregation Effects 0.000 description 1
239000011324 bead Substances 0.000 description 1
230000033228 biological regulation Effects 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
239000000919 ceramic Substances 0.000 description 1
230000001276 controlling effect Effects 0.000 description 1
238000001816 cooling Methods 0.000 description 1
238000005336 cracking Methods 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
239000012634 fragment Substances 0.000 description 1
230000004927 fusion Effects 0.000 description 1
238000007654 immersion Methods 0.000 description 1
239000012768 molten material Substances 0.000 description 1
230000001105 regulatory effect Effects 0.000 description 1
238000009877 rendering Methods 0.000 description 1
238000005096 rolling process Methods 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
239000002210 silicon-based material Substances 0.000 description 1
239000011343 solid material Substances 0.000 description 1
230000002269 spontaneous effect Effects 0.000 description 1
239000000126 substance Substances 0.000 description 1
238000004781 supercooling Methods 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

JP26877596A 1995-10-12 1996-10-09 シリコン単結晶の生成方法及び装置 Pending JPH09142988A (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DE1995138020 DE19538020A1 (de)	1995-10-12	1995-10-12	Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Silicium
DE195-38-020-7		1995-10-12

Publications (1)

Publication Number	Publication Date
JPH09142988A true JPH09142988A (ja)	1997-06-03

Family

ID=7774670

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP26877596A Pending JPH09142988A (ja)	1995-10-12	1996-10-09	シリコン単結晶の生成方法及び装置

Country Status (3)

Country	Link
JP (1)	JPH09142988A (da)
DE (1)	DE19538020A1 (da)
DK (1)	DK105596A (da)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2005529046A (ja) *	2002-05-06	2005-09-29	ペーファオシリコンフォルシュングス− ウントプロドゥクツィオンスアクチエンゲゼルシャフト	るつぼなしの連続的な結晶化により、所定の横断面及び柱状の多結晶構造を有する結晶ロッドを製造するための装置
DE10204178B4 (de) *	2002-02-01	2008-01-03	Siltronic Ag	Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial
JP2009227581A (ja) *	2001-08-02	2009-10-08	Siltronic Ag	フロートゾーン法により製造したシリコン単結晶及びシリコン基板
JP2010042988A (ja) *	2008-08-13	2010-02-25	Siltronic Ag	半導体材料の単結晶を製造する方法
JP2011093793A (ja) *	2009-10-28	2011-05-12	Siltronic Ag	顆粒を再溶融させることによってシリコンから成る単結晶を製造するための装置
JP2011102234A (ja) *	2009-11-11	2011-05-26	Siltronic Ag	粒体の包囲溶融によりシリコンから単結晶を製作するための方法
CN102140674A (zh) *	2010-02-03	2011-08-03	硅电子股份公司	用于通过使用熔融颗粒产生由硅构成的单晶体的方法
JP2013523594A (ja) *	2010-04-13	2013-06-17	シュミットシリコンテクノロジーゲゼルシャフトミットベシュレンクテルハフツング	単結晶半導体材料の生成
JP2014051430A (ja) *	2012-09-04	2014-03-20	Siltronic Ag	シリコン単結晶の製造方法
JP2015203002A (ja) *	2014-04-14	2015-11-16	ジルトロニックアクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃＡＧ	シリコンの単結晶を製造するための装置およびプロセス
JP2016501177A (ja) *	2012-12-11	2016-01-18	ヘムロック・セミコンダクター・コーポレーション	ドープシリコンの形成及び分析方法
CN105332062A (zh) *	2015-10-13	2016-02-17	江苏华盛天龙光电设备股份有限公司	一种用于单晶炉的出料系统
JP2018108912A (ja) *	2017-01-05	2018-07-12	蒲池　豊	シリコン結晶の製造方法
CN110195254A (zh) *	2019-07-12	2019-09-03	中国电子科技集团公司第二十六研究所	一种适用于提拉法的线圈可移动式温场结构与单晶生长方法
CN112899771A (zh) *	2019-12-04	2021-06-04	胜高股份有限公司	单晶制备装置及单晶的制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE102010021004A1 (de) *	2010-05-14	2011-11-17	Schmid Silicon Technology Gmbh	Herstellung von monokristallinen Halbleiterwerkstoffen
DE102011007149A1 (de)	2011-04-11	2012-10-11	Streicher Maschinenbau GmbH & Co. KG	Verfahren und Vorrichtung zur Herstellung von Material mit mono- oder multikristalliner Struktur
DE102015215858B4 (de) *	2015-08-20	2019-01-24	Siltronic Ag	Verfahren zur Wärmebehandlung von Granulat aus Silizium, Granulat aus Silizium und Verfahren zur Herstellung eines Einkristalls aus Silizium

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE4106589C2 (de) *	1991-03-01	1997-04-24	Wacker Siltronic Halbleitermat	Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski

1995
- 1995-10-12 DE DE1995138020 patent/DE19538020A1/de not_active Withdrawn
1996
- 1996-09-26 DK DK105596A patent/DK105596A/da not_active Application Discontinuation
- 1996-10-09 JP JP26877596A patent/JPH09142988A/ja active Pending

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2009227581A (ja) *	2001-08-02	2009-10-08	Siltronic Ag	フロートゾーン法により製造したシリコン単結晶及びシリコン基板
JP2014133702A (ja) *	2001-08-02	2014-07-24	Siltronic Ag	フロートゾーン法により製造したシリコン単結晶及びシリコン基板
US8221550B2 (en)	2002-02-01	2012-07-17	Siltronic Ag	Process and apparatus for producing a single crystal of semiconductor material
US7655089B2 (en)	2002-02-01	2010-02-02	Siltronic Ag	Process and apparatus for producing a single crystal of semiconductor material
DE10204178B4 (de) *	2002-02-01	2008-01-03	Siltronic Ag	Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial
JP2005529046A (ja) *	2002-05-06	2005-09-29	ペーファオシリコンフォルシュングス− ウントプロドゥクツィオンスアクチエンゲゼルシャフト	るつぼなしの連続的な結晶化により、所定の横断面及び柱状の多結晶構造を有する結晶ロッドを製造するための装置
JP2010042988A (ja) *	2008-08-13	2010-02-25	Siltronic Ag	半導体材料の単結晶を製造する方法
JP2011093793A (ja) *	2009-10-28	2011-05-12	Siltronic Ag	顆粒を再溶融させることによってシリコンから成る単結晶を製造するための装置
JP2011102234A (ja) *	2009-11-11	2011-05-26	Siltronic Ag	粒体の包囲溶融によりシリコンから単結晶を製作するための方法
CN102140674A (zh) *	2010-02-03	2011-08-03	硅电子股份公司	用于通过使用熔融颗粒产生由硅构成的单晶体的方法
US20110185963A1 (en) *	2010-02-03	2011-08-04	Siltronic Ag	Method For Producing A Single Crystal Composed Of Silicon Using Molten Granules
TWI449770B (zh) *	2010-02-03	2014-08-21	Siltronic Ag	使用熔融顆粒製造由矽構成的單晶體的方法
US8454746B2 (en) *	2010-02-03	2013-06-04	Siltronic Ag	Method for producing a single crystal composed of silicon using molten granules
JP2013523594A (ja) *	2010-04-13	2013-06-17	シュミットシリコンテクノロジーゲゼルシャフトミットベシュレンクテルハフツング	単結晶半導体材料の生成
JP2014051430A (ja) *	2012-09-04	2014-03-20	Siltronic Ag	シリコン単結晶の製造方法
KR101532836B1 (ko) *	2012-09-04	2015-06-30	실트로닉 아게	실리콘 단결정의 제조 방법
US9410262B2 (en)	2012-09-04	2016-08-09	Siltronic Ag	Method for producing a silicon single crystal
JP2016501177A (ja) *	2012-12-11	2016-01-18	ヘムロック・セミコンダクター・コーポレーション	ドープシリコンの形成及び分析方法
JP2015203002A (ja) *	2014-04-14	2015-11-16	ジルトロニックアクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃＡＧ	シリコンの単結晶を製造するための装置およびプロセス
US9828692B2 (en)	2014-04-14	2017-11-28	Siltronic Ag	Apparatus and process for producing a single crystal of silicon
CN105332062A (zh) *	2015-10-13	2016-02-17	江苏华盛天龙光电设备股份有限公司	一种用于单晶炉的出料系统
JP2018108912A (ja) *	2017-01-05	2018-07-12	蒲池　豊	シリコン結晶の製造方法
CN110195254A (zh) *	2019-07-12	2019-09-03	中国电子科技集团公司第二十六研究所	一种适用于提拉法的线圈可移动式温场结构与单晶生长方法
CN110195254B (zh) *	2019-07-12	2022-08-12	中国电子科技集团公司第二十六研究所	一种适用于提拉法的线圈可移动式温场结构与单晶生长方法
CN112899771A (zh) *	2019-12-04	2021-06-04	胜高股份有限公司	单晶制备装置及单晶的制备方法
JP2021088483A (ja) *	2019-12-04	2021-06-10	株式会社Sumco	単結晶製造装置及び単結晶の製造方法
CN112899771B (zh) *	2019-12-04	2023-12-29	胜高股份有限公司	单晶制备装置及单晶的制备方法

Also Published As

Publication number	Publication date
DE19538020A1 (de)	1997-04-17
DK105596A (da)	1997-04-13

Publication	Publication Date	Title
JPH09142988A (ja)	1997-06-03	シリコン単結晶の生成方法及び装置
US7655089B2 (en)	2010-02-02	Process and apparatus for producing a single crystal of semiconductor material
JPH06199589A (ja)	1994-07-19	微粒ケイ素の浮融帯法
CN101724903B (zh)	2013-02-13	向晶体形成装置装载熔融源材料的熔化器组件和方法
US5462011A (en)	1995-10-31	Method for pulling single crystals
JP4233453B2 (ja)	2009-03-04	多結晶シリコンの溶融速度を向上させるための間欠的供給技術
EP4271862A1 (en)	2023-11-08	Use of buffer members during growth of single crystal silicon ingots
JP3496388B2 (ja)	2004-02-09	粒状シリコン原料の供給方法および供給管
US20240167193A1 (en)	2024-05-23	Systems and methods for cooling a chunk polycrystalline feeder
US4269652A (en)	1981-05-26	Method for growing crystalline materials
US4353875A (en)	1982-10-12	Apparatus for growing crystalline materials
USRE30863E (en)	1982-02-09	Method for crucible-free zone meeting of semiconductor crystal rods
EP4534739A2 (en)	2025-04-09	Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control
JPS5933552B2 (ja)	1984-08-16	結晶成長装置
JP2567312B2 (ja)	1996-12-25	シリコン単結晶の製造装置及び製造方法
EP4483002B1 (en)	2026-04-15	Ingot puller apparatus having silicon feed tubes with kick plates
US12398483B2 (en)	2025-08-26	Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube
US11866845B2 (en)	2024-01-09	Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control
US20260043169A1 (en)	2026-02-12	Crucibles having anchors and methods for producing and using same
US20250051957A1 (en)	2025-02-13	Crucibles having anchors
US20250051958A1 (en)	2025-02-13	Crucibles having anchors and methods for producing and using same
JPH09255470A (ja)	1997-09-30	単結晶用原料の供給方法
JPH09208367A (ja)	1997-08-12	二重ルツボへの初期のシリコン原料の供給方法
JPH02255589A (ja)	1990-10-16	シリコン単結晶の製造方法及びその装置
JPH07300389A (ja)	1995-11-14	半導体単結晶製造方法