DK1060285T3 - Indretning og fremgangsmåde til afsætning af et halvledermateriale - Google Patents

Indretning og fremgangsmåde til afsætning af et halvledermateriale

Info

Publication number
DK1060285T3
DK1060285T3 DK99903204.8T DK99903204T DK1060285T3 DK 1060285 T3 DK1060285 T3 DK 1060285T3 DK 99903204 T DK99903204 T DK 99903204T DK 1060285 T3 DK1060285 T3 DK 1060285T3
Authority
DK
Denmark
Prior art keywords
semiconductor layer
permeable member
glass sheet
vapor
tubular
Prior art date
Application number
DK99903204.8T
Other languages
English (en)
Inventor
Ricky C Powell
Gary L Dorer
Nicholas A Reiter
Harold A Mcmaster
Steven M Cox
Terence D Kahle
Original Assignee
First Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Application granted granted Critical
Publication of DK1060285T3 publication Critical patent/DK1060285T3/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/287—Chalcogenides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/151—Deposition methods from the vapour phase by vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrostatic Spraying Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
DK99903204.8T 1998-02-19 1999-01-20 Indretning og fremgangsmåde til afsætning af et halvledermateriale DK1060285T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/026,139 US6037241A (en) 1998-02-19 1998-02-19 Apparatus and method for depositing a semiconductor material
PCT/US1999/001149 WO1999042635A1 (en) 1998-02-19 1999-01-20 Apparatus and method for depositing a semiconductor material

Publications (1)

Publication Number Publication Date
DK1060285T3 true DK1060285T3 (da) 2011-08-15

Family

ID=21830125

Family Applications (1)

Application Number Title Priority Date Filing Date
DK99903204.8T DK1060285T3 (da) 1998-02-19 1999-01-20 Indretning og fremgangsmåde til afsætning af et halvledermateriale

Country Status (11)

Country Link
US (1) US6037241A (da)
EP (1) EP1060285B1 (da)
JP (1) JP3504613B2 (da)
CN (1) CN1130470C (da)
AT (1) ATE510935T1 (da)
AU (1) AU2328399A (da)
CY (1) CY1111737T1 (da)
DK (1) DK1060285T3 (da)
ES (1) ES2366662T3 (da)
PT (1) PT1060285E (da)
WO (1) WO1999042635A1 (da)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3147048B2 (ja) * 1997-09-12 2001-03-19 日本電気株式会社 半導体装置
US20030129299A1 (en) * 2000-11-16 2003-07-10 Swanson Leland S. Selective deposition of emissive layer in electroluminescent displays
US6559411B2 (en) * 2001-08-10 2003-05-06 First Solar, Llc Method and apparatus for laser scribing glass sheet substrate coatings
US6719848B2 (en) 2001-08-16 2004-04-13 First Solar, Llc Chemical vapor deposition system
US8535759B2 (en) * 2001-09-04 2013-09-17 The Trustees Of Princeton University Method and apparatus for depositing material using a dynamic pressure
US7404862B2 (en) * 2001-09-04 2008-07-29 The Trustees Of Princeton University Device and method for organic vapor jet deposition
US7431968B1 (en) * 2001-09-04 2008-10-07 The Trustees Of Princeton University Process and apparatus for organic vapor jet deposition
US6776330B2 (en) 2001-09-10 2004-08-17 Air Products And Chemicals, Inc. Hydrogen fluxless soldering by electron attachment
US6808741B1 (en) * 2001-10-26 2004-10-26 Seagate Technology Llc In-line, pass-by method for vapor lubrication
US6617507B2 (en) 2001-11-16 2003-09-09 First Solar, Llc Photovoltaic array
EP1449262B1 (en) 2001-11-16 2012-10-03 First Solar, Inc Photovoltaic array
US7208195B2 (en) * 2002-03-27 2007-04-24 Ener1Group, Inc. Methods and apparatus for deposition of thin films
US20040144321A1 (en) * 2003-01-28 2004-07-29 Eastman Kodak Company Method of designing a thermal physical vapor deposition system
JP4180948B2 (ja) * 2003-03-24 2008-11-12 東京エレクトロン株式会社 基板処理装置および基板処理方法、ガスノズル
US7387738B2 (en) * 2003-04-28 2008-06-17 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment for wafer bumping applications
US7897029B2 (en) * 2008-03-04 2011-03-01 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
US8361340B2 (en) * 2003-04-28 2013-01-29 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
US7079370B2 (en) * 2003-04-28 2006-07-18 Air Products And Chemicals, Inc. Apparatus and method for removal of surface oxides via fluxless technique electron attachment and remote ion generation
US6959517B2 (en) * 2003-05-09 2005-11-01 First Solar, Llc Photovoltaic panel mounting bracket
US6893939B1 (en) * 2004-02-25 2005-05-17 Eastman Kodak Company Thermal physical vapor deposition source with minimized internal condensation effects
JP4366226B2 (ja) * 2004-03-30 2009-11-18 東北パイオニア株式会社 有機ｅｌパネルの製造方法、有機ｅｌパネルの成膜装置
US20050244580A1 (en) * 2004-04-30 2005-11-03 Eastman Kodak Company Deposition apparatus for temperature sensitive materials
US20050257824A1 (en) * 2004-05-24 2005-11-24 Maltby Michael G Photovoltaic cell including capping layer
GB2415707A (en) * 2004-06-30 2006-01-04 Arima Optoelectronic Vertical hydride vapour phase epitaxy deposition using a homogenising diaphragm
US7780787B2 (en) * 2004-08-11 2010-08-24 First Solar, Inc. Apparatus and method for depositing a material on a substrate
CN101432457B (zh) * 2004-08-18 2013-06-12 卡利索有限责任公司 大气压化学气相淀积
US7398605B2 (en) * 2005-02-04 2008-07-15 Eastman Kodak Company Method of feeding particulate material to a heated vaporization surface
US20060185595A1 (en) * 2005-02-23 2006-08-24 Coll Bernard F Apparatus and process for carbon nanotube growth
US7968145B2 (en) 2005-04-26 2011-06-28 First Solar, Inc. System and method for depositing a material on a substrate
US7931937B2 (en) * 2005-04-26 2011-04-26 First Solar, Inc. System and method for depositing a material on a substrate
WO2006116411A2 (en) 2005-04-26 2006-11-02 First Solar, Inc. System and method for depositing a material on a substrate
US7910166B2 (en) * 2005-04-26 2011-03-22 First Solar, Inc. System and method for depositing a material on a substrate
US7927659B2 (en) * 2005-04-26 2011-04-19 First Solar, Inc. System and method for depositing a material on a substrate
US20060261817A1 (en) * 2005-05-02 2006-11-23 Poddany James J System and method for testing a photovoltaic module
US7213347B2 (en) * 2005-05-03 2007-05-08 Eastman Kodak Company Metering material to promote rapid vaporization
US7434719B2 (en) * 2005-12-09 2008-10-14 Air Products And Chemicals, Inc. Addition of D2 to H2 to detect and calibrate atomic hydrogen formed by dissociative electron attachment
US9017480B2 (en) * 2006-04-06 2015-04-28 First Solar, Inc. System and method for transport
US8603250B2 (en) 2006-06-27 2013-12-10 First Solar, Inc. System and method for deposition of a material on a substrate
DE102008026001B4 (de) * 2007-09-04 2012-02-16 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur Erzeugung und Bearbeitung von Schichten auf Substraten unter definierter Prozessatmosphäre und Heizelement
KR101614554B1 (ko) 2007-11-02 2016-04-21 퍼스트 솔라, 인코포레이티드 도핑된 반도체 막을 포함하는 광기전 장치
WO2009091713A1 (en) * 2008-01-15 2009-07-23 First Solar, Inc. System and method for depositing a material on a substrate
EP2096192A1 (en) * 2008-02-28 2009-09-02 Applied Materials, Inc. Backside coating prevention device.
CN101990480A (zh) * 2008-04-10 2011-03-23 应用材料股份有限公司 激光刻划平台与杂合书写策略
CN101990481A (zh) * 2008-04-10 2011-03-23 应用材料股份有限公司 激光切割平台
US20090321399A1 (en) * 2008-04-11 2009-12-31 Applied Materials, Inc. Dynamic scribe alignment for laser scribing, welding or any patterning system
TW201006598A (en) * 2008-04-11 2010-02-16 Applied Materials Inc Laser scribe inspection methods and systems
US20090314752A1 (en) * 2008-05-14 2009-12-24 Applied Materials, Inc. In-situ monitoring for laser ablation
US8334455B2 (en) 2008-07-24 2012-12-18 First Solar, Inc. Photovoltaic devices including Mg-doped semiconductor films
US20100059115A1 (en) * 2008-09-05 2010-03-11 First Solar, Inc. Coated Substrates and Semiconductor Devices Including the Substrates
CN102217056A (zh) * 2008-11-19 2011-10-12 应用材料股份有限公司 激光-划线工具架构
TW201027779A (en) * 2008-11-19 2010-07-16 First Solar Inc Photovoltaic devices including heterojunctions
WO2010065246A1 (en) * 2008-11-25 2010-06-10 First Solar, Inc. Photovoltaic devices including copper indium gallium selenide
US8628617B2 (en) * 2008-12-03 2014-01-14 First Solar, Inc. System and method for top-down material deposition
WO2010094012A1 (en) * 2009-02-13 2010-08-19 First Solar, Inc. Photovoltaic power plant output
US20100212731A1 (en) * 2009-02-25 2010-08-26 First Solar, Inc. Photovoltaic Devices Including Controlled Copper Uptake
US20100212358A1 (en) * 2009-02-26 2010-08-26 Applied Materials, Inc. Glass substrate orientation inspection methods and systems for photo voltaics production
US8333843B2 (en) * 2009-04-16 2012-12-18 Applied Materials, Inc. Process to remove metal contamination on a glass substrate
US20100269853A1 (en) * 2009-04-27 2010-10-28 Applied Materials, Inc. Debris-extraction exhaust system
WO2010144778A2 (en) * 2009-06-12 2010-12-16 Applied Materials, Inc. Methods and systems for laser-scribed line alignment
IN2012DN00357A (da) * 2009-07-10 2015-08-21 First Solar Inc
US20110132884A1 (en) * 2009-08-06 2011-06-09 Applied Materials, Inc. Laser modules and processes for thin film solar panel laser scribing
DE112010003736T5 (de) * 2009-08-06 2013-02-28 Applied Materials, Inc. Ritzen von quer verlaufenden ISO-Linien, verknüpfen, und vereinfachte Laser- und Scannersteuerungen
WO2011017570A2 (en) * 2009-08-06 2011-02-10 Applied Materials, Inc. In-line metrology methods and systems for solar cell fabrication
US8129658B2 (en) * 2009-08-06 2012-03-06 Applied Materials, Inc. Systems for thin film laser scribing devices
US8801856B2 (en) * 2009-09-08 2014-08-12 Universal Display Corporation Method and system for high-throughput deposition of patterned organic thin films
WO2011056900A2 (en) * 2009-11-03 2011-05-12 Applied Materials, Inc. Multi-wavelength laser-scribing tool
US8430963B2 (en) * 2010-01-07 2013-04-30 Primestar Solar, Inc. Cool-down system and method for a vapor deposition system
US8361229B2 (en) 2010-04-22 2013-01-29 Primestar Solar, Inc. Seal configuration for a system for continuous deposition of a thin film layer on a substrate
CN102312199B (zh) * 2010-06-30 2013-10-02 上方能源技术(杭州)有限公司 一种扫描镀膜装置及扫描镀膜组件
US8771421B2 (en) 2010-12-23 2014-07-08 First Solar, Inc. Entrance and exit roll seal configuration for a vapor deposition system
CN102839352A (zh) * 2011-06-21 2012-12-26 无锡尚德太阳能电力有限公司 一种薄膜沉积装置及方法
DE102011051260A1 (de) 2011-06-22 2012-12-27 Aixtron Se Verfahren und Vorrichtung zum Abscheiden von OLEDs
CN103930588B (zh) 2011-06-22 2016-08-17 艾克斯特朗欧洲公司 用于气相沉积的方法和装置
JP5848822B2 (ja) 2011-06-22 2016-01-27 アイクストロン、エスイー 気相蒸着システム及び供給ヘッド
DE102011051261A1 (de) 2011-06-22 2012-12-27 Aixtron Se Verfahren und Vorrichtung zum Abscheiden von OLEDs insbesondere Verdampfungsvorrichtung dazu
DE102011051263B4 (de) 2011-06-22 2022-08-11 Aixtron Se Vorrichtung zur Aerosolerzeugung und Abscheiden einer lichtemittierenden Schicht
JP5877244B2 (ja) 2011-06-22 2016-03-02 アイクストロン、エスイー 気相蒸着材料ソース及びその作製方法
JP2013035741A (ja) * 2011-07-11 2013-02-21 Tokai Konetsu Kogyo Co Ltd 原料ガス供給用炭化けい素発熱体
US8677932B2 (en) 2011-08-03 2014-03-25 First Solar, Inc. Apparatus for metering granular source material in a thin film vapor deposition apparatus
US20120052202A1 (en) * 2011-08-03 2012-03-01 Primestar Solar, Inc. Method for metering granular source material in a thin film vapor deposition apparatus
WO2013032801A1 (en) 2011-09-02 2013-03-07 First Solar, Inc. Feeder system and method for a vapor transport deposition system
WO2013052460A1 (en) 2011-10-05 2013-04-11 First Solar, Inc. Vapor transport deposition method and system for material co-deposition
EP2780489B1 (en) 2011-11-18 2019-01-09 First Solar, Inc Vapor transport deposition method and system for material co-deposition
CN103132022A (zh) * 2011-11-24 2013-06-05 甘国工 在玻璃或金属基片上沉积导电膜或半导体材料的设备和方法
CN103132021A (zh) * 2011-11-24 2013-06-05 甘国工 在基片上沉积导电膜或半导体材料的设备和方法
CN104737268A (zh) 2012-01-12 2015-06-24 第一太阳能有限公司 在半导体器件的不同层中提供掺杂剂浓度控制的方法和系统
WO2013116215A1 (en) 2012-01-31 2013-08-08 First Solar, Inc. Integrated vapor transport deposition method and system
CN103526159A (zh) * 2012-07-04 2014-01-22 甘国工 在玻璃或金属基片上沉积铜铟镓硒吸收层的设备和方法
US9692039B2 (en) 2012-07-24 2017-06-27 Quantumscape Corporation Nanostructured materials for electrochemical conversion reactions
US9196768B2 (en) * 2013-03-15 2015-11-24 Jehad A. Abushama Method and apparatus for depositing copper—indium—gallium selenide (CuInGaSe2-CIGS) thin films and other materials on a substrate
WO2014197751A1 (en) 2013-06-06 2014-12-11 Quantumscape Corporation Flash evaporation of solid state battery component
WO2015130831A1 (en) 2014-02-25 2015-09-03 Quantumscape Corporation Hybrid electrodes with both intercalation and conversion materials
US10326135B2 (en) 2014-08-15 2019-06-18 Quantumscape Corporation Doped conversion materials for secondary battery cathodes
DE102014117492A1 (de) 2014-11-28 2016-06-02 Aixtron Se Vorrichtung zum Abscheiden einer Schicht auf einem Substrat
CN104789945B (zh) * 2015-04-01 2017-05-24 华东师范大学 一种太阳能电池吸收层的气相输运沉积装置
DE102016101856B4 (de) * 2016-02-03 2017-11-30 Ctf Solar Gmbh Verfahren zum Abscheiden einer CdTe-Schicht auf einem Substrat
US11946131B2 (en) * 2017-05-26 2024-04-02 Universal Display Corporation Sublimation cell with time stability of output vapor pressure
WO2019084125A1 (en) 2017-10-26 2019-05-02 First Solar, Inc. SYSTEMS AND METHODS FOR STEAM VAPORIZATION AND DISTRIBUTION
WO2020033799A1 (en) 2018-08-10 2020-02-13 First Solar, Inc. Systems and methods for vaporization and vapor distribution
US10930494B2 (en) 2019-04-09 2021-02-23 Swift Solar Inc. Vapor phase transport system and method for depositing perovskite semiconductors
JP2023515477A (ja) 2020-02-19 2023-04-13 ファースト・ソーラー・インコーポレーテッド 蒸気搬送堆積によるペロブスカイトデバイス加工の方法
DE102020118015A1 (de) * 2020-07-08 2022-01-13 Thyssenkrupp Steel Europe Ag Beschichtungsvorrichtung zum Ablagern eines Beschichtungsmaterials auf einem Substrat
CN113354296B (zh) * 2021-05-17 2022-05-27 重庆鸿元展印科技股份有限公司 一种用于玻璃瓶包装的贴花工艺及其辅助装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4083708A (en) * 1976-09-15 1978-04-11 Exxon Research & Engineering Co. Forming a glass on a substrate
US4401052A (en) * 1979-05-29 1983-08-30 The University Of Delaware Apparatus for continuous deposition by vacuum evaporation
US4997677A (en) * 1987-08-31 1991-03-05 Massachusetts Institute Of Technology Vapor phase reactor for making multilayer structures
DE3801147A1 (de) * 1988-01-16 1989-07-27 Philips Patentverwaltung Vorrichtung zum erzeugen eines mit dem dampf eines wenig fluechtigen stoffes angereicherten gasstroms
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US5071678A (en) * 1990-10-09 1991-12-10 United Technologies Corporation Process for applying gas phase diffusion aluminide coatings
US5182567A (en) * 1990-10-12 1993-01-26 Custom Metallizing Services, Inc. Retrofittable vapor source for vacuum metallizing utilizing spatter reduction means
JP2888026B2 (ja) * 1992-04-30 1999-05-10 松下電器産業株式会社 プラズマｃｖｄ装置
US5248349A (en) * 1992-05-12 1993-09-28 Solar Cells, Inc. Process for making photovoltaic devices and resultant product
FR2713666B1 (fr) * 1993-12-15 1996-01-12 Air Liquide Procédé et dispositif de dépôt à basse température d'un film contenant du silicium sur un substrat métallique.
US5596673A (en) * 1994-11-18 1997-01-21 Xerox Corporation Evaporation crucible assembly
JP2845773B2 (ja) * 1995-04-27 1999-01-13 山形日本電気株式会社 常圧ｃｖｄ装置
US5835687A (en) * 1996-10-21 1998-11-10 Vidar Systems Corporation Methods and apparatus for providing digital halftone images with random error diffusion dithering
US5882416A (en) * 1997-06-19 1999-03-16 Advanced Technology Materials, Inc. Liquid delivery system, heater apparatus for liquid delivery system, and vaporizer
US5945163A (en) * 1998-02-19 1999-08-31 First Solar, Llc Apparatus and method for depositing a material on a substrate

Also Published As

Publication number Publication date
JP2002504745A (ja) 2002-02-12
EP1060285A1 (en) 2000-12-20
CN1130470C (zh) 2003-12-10
CN1291241A (zh) 2001-04-11
JP3504613B2 (ja) 2004-03-08
CY1111737T1 (el) 2015-10-07
EP1060285B1 (en) 2011-05-25
US6037241A (en) 2000-03-14
AU2328399A (en) 1999-09-06
EP1060285A4 (en) 2009-01-07
ATE510935T1 (de) 2011-06-15
ES2366662T3 (es) 2011-10-24
WO1999042635A1 (en) 1999-08-26
PT1060285E (pt) 2011-08-26

Similar Documents

Publication Publication Date Title
DK1060285T3 (da) Indretning og fremgangsmåde til afsætning af et halvledermateriale
DE69808803D1 (de) Züchtung von sehr gleichmässigen epitaktischen schichten aus silizium karbid
ATE337173T1 (de) Verfahren zum kunststoffbeschichten
KR880003403A (ko) 화학적 기상 성장법과 그장치
TW200704819A (en) Method for silicon based dielectric chemical vapor deposition
US8388754B2 (en) System and method for depositing a material on a substrate
TNSN07064A1 (en) Atmospheric pressure chemical vapor deposition
TW200712258A (en) Method for microstructure control of ceramic thermal spray coating
DE69800937D1 (de) Vorrichtung und verfahren zur cyclischen probenaufbereitung bei verschiedenen temperaturen und verwendung der vorrichtung
PL362846A1 (en) Process for the application of powder coatings to non-metallic substrates
ATE23883T1 (de) Vorrichtung zum niederschlag und zur isolation mit mehreren kammern.
KR950007032A (ko) 반도체장치의 절연층 형성방법 및 그 형성장치
EP0738788A3 (en) Thin-Film vapor deposition apparatus
DE69801987D1 (de) Suszeptor ausführungen für siliziumkarbid-dünnschichten
ATE497028T1 (de) Vorrichtung und verfahren zum vakuum-ausdampfen
TW348272B (en) Method and apparatus for depositing planar and highly oriented layers
DE60002343D1 (de) Mehrstufiges beschichtungsverfahren unter verwendung einer wässerigen grundschicht und pulverigen deckschicht
ATE230445T1 (de) Verfahren und vorrichtung zur ablagerung von parylen af4 auf halbleiterwafern
ATE290617T1 (de) Verfahren und vorrichtung zur abscheidung von materialien mit grosser elektronischer bandlücke und grosser bindungsenergie
DE60133838D1 (de) Verfahren zur temperaturgesteuerten dampfabscheidung auf einem substrat
WO2006130817A3 (en) Deposition of uniform layer of desired material
DK1152839T3 (da) Fremgangsmåde og indretning til behandling af substrater
TW200625517A (en) Gradient deposition of low-k CVD materials
DK0521078T3 (da) Forbedret glødetrådsreaktor til kemisk dampafsættelse
WO2006022651A8 (en) System for and method of ensuring accurate shadow mask-to-substrate registration in a deposition process