DK134900C - - Google Patents
Info
- Publication number
- DK134900C DK134900C DK561070A DK561070A DK134900C DK 134900 C DK134900 C DK 134900C DK 561070 A DK561070 A DK 561070A DK 561070 A DK561070 A DK 561070A DK 134900 C DK134900 C DK 134900C
- Authority
- DK
- Denmark
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US87444569A | 1969-11-06 | 1969-11-06 | |
| US87444469A | 1969-11-06 | 1969-11-06 | |
| US8064570A | 1970-10-14 | 1970-10-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DK134900B DK134900B (da) | 1977-02-07 |
| DK134900C true DK134900C (fr) | 1977-07-04 |
Family
ID=27373749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK561070A DK134900B (da) | 1969-11-06 | 1970-11-04 | Fremgangsmåde til fremstilling af halvledersiliciummetal ud fra en chlorsilan. |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE758468A (fr) |
| CA (1) | CA959631A (fr) |
| DE (1) | DE2054266A1 (fr) |
| DK (1) | DK134900B (fr) |
| FR (1) | FR2069002A5 (fr) |
| GB (1) | GB1338403A (fr) |
| NL (1) | NL7016148A (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2179930A (en) * | 1985-09-06 | 1987-03-18 | Philips Electronic Associated | A method of depositing an epitaxial silicon layer |
-
1970
- 1970-10-30 CA CA096,958A patent/CA959631A/en not_active Expired
- 1970-11-04 FR FR7039664A patent/FR2069002A5/fr not_active Expired
- 1970-11-04 GB GB5252470A patent/GB1338403A/en not_active Expired
- 1970-11-04 DE DE19702054266 patent/DE2054266A1/de active Pending
- 1970-11-04 DK DK561070A patent/DK134900B/da unknown
- 1970-11-04 NL NL7016148A patent/NL7016148A/xx unknown
- 1970-11-04 BE BE758468D patent/BE758468A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE2054266A1 (de) | 1971-05-13 |
| NL7016148A (fr) | 1971-05-10 |
| FR2069002A5 (fr) | 1971-09-03 |
| DK134900B (da) | 1977-02-07 |
| CA959631A (en) | 1974-12-24 |
| BE758468A (fr) | 1971-05-04 |
| GB1338403A (en) | 1973-11-21 |