DK141785C - Indretning til elektrisk opvarmning af en halvlederstav undersamtidig tvaersnitsforoegelse som foelge af en udskillelsesproces fra gasfasen - Google Patents

Indretning til elektrisk opvarmning af en halvlederstav undersamtidig tvaersnitsforoegelse som foelge af en udskillelsesproces fra gasfasen

Info

Publication number
DK141785C
DK141785C DK532272A DK532272A DK141785C DK 141785 C DK141785 C DK 141785C DK 532272 A DK532272 A DK 532272A DK 532272 A DK532272 A DK 532272A DK 141785 C DK141785 C DK 141785C
Authority
DK
Denmark
Prior art keywords
cross
semiconductor
electric heating
crossing
civil
Prior art date
Application number
DK532272A
Other languages
Danish (da)
English (en)
Other versions
DK141785B (da
Inventor
H Stut
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2153566A external-priority patent/DE2153566C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of DK141785B publication Critical patent/DK141785B/da
Application granted granted Critical
Publication of DK141785C publication Critical patent/DK141785C/da

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Control Of Resistance Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DK532272A 1971-10-27 1972-10-26 Indretning til elektrisk opvarmning af en halvlederstav undersamtidig tvaersnitsforoegelse som foelge af en udskillelsesproces fra gasfasen DK141785C (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2153566A DE2153566C3 (de) 1971-07-07 1971-10-27 Vorrichtung zum elektrischen Beheizen eines sich infolge eines Abscheidungsprozesses aus der Gasphase verdickenden Halbleiterstabes
DE2153566 1971-10-27

Publications (2)

Publication Number Publication Date
DK141785B DK141785B (da) 1980-06-16
DK141785C true DK141785C (da) 1980-11-03

Family

ID=5823559

Family Applications (1)

Application Number Title Priority Date Filing Date
DK532272A DK141785C (da) 1971-10-27 1972-10-26 Indretning til elektrisk opvarmning af en halvlederstav undersamtidig tvaersnitsforoegelse som foelge af en udskillelsesproces fra gasfasen

Country Status (4)

Country Link
US (1) US3980942A (fr)
JP (1) JPS4852373A (fr)
BE (1) BE790657R (fr)
DK (1) DK141785C (fr)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3082381A (en) * 1959-05-27 1963-03-19 Goodyear Aircraft Corp Automatic gain control circuit
US3378639A (en) * 1960-09-12 1968-04-16 American Seating Co Instruction apparatus for classrooms
US3373959A (en) * 1965-10-21 1968-03-19 Honeywell Inc Control apparatus
US3700412A (en) * 1968-12-06 1972-10-24 Kokusai Electric Co Ltd Crystal pulling apparatus having means for maintaining liquid solid crystal interface at a constant temperature
US3577090A (en) * 1969-08-25 1971-05-04 Shell Oil Co Fast settling, stable amplifier circuit
US3602833A (en) * 1969-09-23 1971-08-31 Us Navy Active twin t filter with a positive feedback q control
US3602804A (en) * 1969-12-08 1971-08-31 Acme Electric Corp Regulator circuit responsive to input voltage,output voltage and current
DE2000130B2 (de) * 1970-01-02 1970-12-10 Erich Ott Analogregler mit einem Triac als Wechselstromsteller
US3623140A (en) * 1970-01-30 1971-11-23 Forbro Design Corp Plurality of programmable regulated power supplies share the load in a predetermined ratio with overall stability determined by the master supply

Also Published As

Publication number Publication date
BE790657R (fr) 1973-02-15
JPS4852373A (fr) 1973-07-23
DK141785B (da) 1980-06-16
US3980942A (en) 1976-09-14

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