DK160325B - Enkeltkrystal mangelagsstrukturer, hvori de enkelte lag skiftevis er fremstillet med eller uden dopningsmiddel, fremgangsmaade til fremstilling af strukturen og optisk filter, fremstillet ud fra strukturen - Google Patents

Enkeltkrystal mangelagsstrukturer, hvori de enkelte lag skiftevis er fremstillet med eller uden dopningsmiddel, fremgangsmaade til fremstilling af strukturen og optisk filter, fremstillet ud fra strukturen Download PDF

Info

Publication number: DK160325B
Authority: DK; Denmark
Prior art keywords: layer; electro; layers; solution; dopant
Prior art date: 1984-05-01

Application number

DK609585A

Other languages

Danish (da)

English (en)

Other versions

DK609585A (da

DK609585D0 (da

Inventor

Sanat K Sashital

Original Assignee

Hughes Aircraft Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-05-01

Filing date

1985-12-30

Publication date

1991-02-25

1985-12-30 Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co

1985-12-30 Publication of DK609585D0 publication Critical patent/DK609585D0/da

1986-01-14 Publication of DK609585A publication Critical patent/DK609585A/da

1991-02-25 Publication of DK160325B publication Critical patent/DK160325B/da

Links

239000013078 crystal Substances 0.000 title claims description 95
239000002019 doping agent Substances 0.000 title claims description 41
238000000034 method Methods 0.000 title claims description 29
230000003287 optical effect Effects 0.000 title claims description 13
239000010410 layer Substances 0.000 claims description 135
239000004332 silver Substances 0.000 claims description 67
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 66
229910052709 silver Inorganic materials 0.000 claims description 66
WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 36
229910052732 germanium Inorganic materials 0.000 claims description 35
239000000463 material Substances 0.000 claims description 35
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 34
239000000758 substrate Substances 0.000 claims description 26
239000000203 mixture Substances 0.000 claims description 20
239000001103 potassium chloride Substances 0.000 claims description 19
235000011164 potassium chloride Nutrition 0.000 claims description 18
239000002904 solvent Substances 0.000 claims description 12
238000001816 cooling Methods 0.000 claims description 11
239000002178 crystalline material Substances 0.000 claims description 10
239000000382 optic material Substances 0.000 claims description 9
239000002356 single layer Substances 0.000 claims description 3
230000015572 biosynthetic process Effects 0.000 claims description 2
238000000151 deposition Methods 0.000 claims 2
238000004519 manufacturing process Methods 0.000 claims 2
238000005406 washing Methods 0.000 claims 2
238000010583 slow cooling Methods 0.000 claims 1
239000007787 solid Substances 0.000 description 9
239000007788 liquid Substances 0.000 description 6
239000012071 phase Substances 0.000 description 6
239000010453 quartz Substances 0.000 description 4
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
230000001419 dependent effect Effects 0.000 description 3
238000005191 phase separation Methods 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
229910000807 Ga alloy Inorganic materials 0.000 description 2
239000012298 atmosphere Substances 0.000 description 2
230000008901 benefit Effects 0.000 description 2
238000006243 chemical reaction Methods 0.000 description 2
238000010586 diagram Methods 0.000 description 2
230000005496 eutectics Effects 0.000 description 2
230000001747 exhibiting effect Effects 0.000 description 2
229910052981 lead sulfide Inorganic materials 0.000 description 2
229940056932 lead sulfide Drugs 0.000 description 2
230000010355 oscillation Effects 0.000 description 2
238000010587 phase diagram Methods 0.000 description 2
230000010287 polarization Effects 0.000 description 2
239000004065 semiconductor Substances 0.000 description 2
-1 silver thiolate Chemical class 0.000 description 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
241000208152 Geranium Species 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
BPYMJIZUWGOKJS-UHFFFAOYSA-N [Ge].[Ag] Chemical compound [Ge].[Ag] BPYMJIZUWGOKJS-UHFFFAOYSA-N 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
229910052946 acanthite Inorganic materials 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
239000012300 argon atmosphere Substances 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
238000002109 crystal growth method Methods 0.000 description 1
238000002425 crystallisation Methods 0.000 description 1
230000008025 crystallization Effects 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000004455 differential thermal analysis Methods 0.000 description 1
230000005684 electric field Effects 0.000 description 1
229910052733 gallium Inorganic materials 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
239000004615 ingredient Substances 0.000 description 1
230000031700 light absorption Effects 0.000 description 1
239000006193 liquid solution Substances 0.000 description 1
238000002844 melting Methods 0.000 description 1
230000008018 melting Effects 0.000 description 1
238000005498 polishing Methods 0.000 description 1
239000000843 powder Substances 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
230000001105 regulatory effect Effects 0.000 description 1
229940056910 silver sulfide Drugs 0.000 description 1
239000007790 solid phase Substances 0.000 description 1
239000000126 substance Substances 0.000 description 1
YPMOSINXXHVZIL-UHFFFAOYSA-N sulfanylideneantimony Chemical compound [Sb]=S YPMOSINXXHVZIL-UHFFFAOYSA-N 0.000 description 1
229910052717 sulfur Inorganic materials 0.000 description 1
239000011593 sulfur Substances 0.000 description 1
230000002194 synthesizing effect Effects 0.000 description 1

Classifications

- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0018—Electro-optical materials
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physics & Mathematics (AREA)
Nonlinear Science (AREA)
General Physics & Mathematics (AREA)
Optics & Photonics (AREA)
Inorganic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

DK609585A 1984-05-01 1985-12-30 Enkeltkrystal mangelagsstrukturer, hvori de enkelte lag skiftevis er fremstillet med eller uden dopningsmiddel, fremgangsmaade til fremstilling af strukturen og optisk filter, fremstillet ud fra strukturen DK160325B (da)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
US06/605,736 US4589737A (en)	1984-05-01	1984-05-01	Doped and undoped single crystal multilayered structures
US60573684		1984-05-01
US8500623		1985-04-10
PCT/US1985/000623 WO1985005134A1 (fr)	1984-05-01	1985-04-10	Structures a couches multiples de monocristaux dopees et non dopees

Publications (3)

Publication Number	Publication Date
DK609585D0 DK609585D0 (da)	1985-12-30
DK609585A DK609585A (da)	1986-01-14
DK160325B true DK160325B (da)	1991-02-25

Family

ID=24424998

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DK609585A DK160325B (da)	1984-05-01	1985-12-30	Enkeltkrystal mangelagsstrukturer, hvori de enkelte lag skiftevis er fremstillet med eller uden dopningsmiddel, fremgangsmaade til fremstilling af strukturen og optisk filter, fremstillet ud fra strukturen

Country Status (7)

Country	Link
US (1)	US4589737A (fr)
EP (2)	EP0316021A3 (fr)
JP (1)	JPS61501980A (fr)
DE (1)	DE3575581D1 (fr)
DK (1)	DK160325B (fr)
IL (2)	IL74938A (fr)
WO (1)	WO1985005134A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2607628B1 (fr) *	1986-11-27	1989-03-17	Centre Nat Rech Scient	Modulateur optique a superreseau
US5212585A (en) *	1990-04-03	1993-05-18	American Optical Corporation	Laser protective device
DE4401626A1 (de) *	1994-01-20	1995-07-27	Max Planck Gesellschaft	Verfahren und Vorrichtung zur Herstellung kristalliner Schichten
US6795605B1 (en) *	2000-08-01	2004-09-21	Cheetah Omni, Llc	Micromechanical optical switch
US7145704B1 (en)	2003-11-25	2006-12-05	Cheetah Omni, Llc	Optical logic gate based optical router
US6888661B1 (en)	2002-06-13	2005-05-03	Cheetah Omni, Llc	Square filter function tunable optical devices

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3345141A (en) *	1963-11-07	1967-10-03	Perkin Elmer Corp	Growth of calcite crystals from a molten flux by slow cooling
US4001076A (en) *	1974-12-11	1977-01-04	Gte Laboratories Incorporated	Method for growing thin epitaxial layers of a non-linear, optically active material
JPS5228867A (en) *	1975-08-29	1977-03-04	Sanyo Electric Co Ltd	Process for formation of pn junction
JPS5437098A (en) *	1977-08-30	1979-03-19	Toshiba Corp	Method of producing gallium phosphide greenish luminous element
US4197008A (en)	1977-12-27	1980-04-08	Hughes Aircraft Company	Electro-optic tunable optical filter
US4229073A (en) *	1979-08-10	1980-10-21	Hughes Aircraft Company	Iso-index coupled-wave electro-optic filters
US4247166A (en) *	1979-08-15	1981-01-27	Rockwell International Corporation	Single plate birefringent optical filter
US4240696A (en)	1979-11-13	1980-12-23	Rockwell International Corporation	Multilayer electro-optically tunable filter
US4350413A (en)	1980-04-14	1982-09-21	The United States Of America As Represented By The Secretary Of The Navy	Multi-color tunable filter
US4500178A (en) *	1981-10-13	1985-02-19	Rockwell International Corporation	Iso-index birefringent filters
US4540461A (en)	1984-04-30	1985-09-10	Hughes Aircraft Company	Silver thiogallate single crystal layers epitaxially grown from potassium chloride-silver thiogallate solution
US4534822A (en)	1984-04-30	1985-08-13	Hughes Aircraft Company	Method of synthesizing thin, single crystal layers of silver thiogallate (AgGaS2)

1984
- 1984-04-16 IL IL74938A patent/IL74938A/xx unknown
- 1984-05-01 US US06/605,736 patent/US4589737A/en not_active Expired - Fee Related
1985
- 1985-04-10 EP EP88121028A patent/EP0316021A3/fr not_active Withdrawn
- 1985-04-10 WO PCT/US1985/000623 patent/WO1985005134A1/fr not_active Ceased
- 1985-04-10 DE DE8585902246T patent/DE3575581D1/de not_active Expired - Fee Related
- 1985-04-10 EP EP85902246A patent/EP0179852B1/fr not_active Expired - Lifetime
- 1985-04-10 JP JP60501861A patent/JPS61501980A/ja active Granted
- 1985-04-16 IL IL74938A patent/IL74938A0/xx unknown
- 1985-12-30 DK DK609585A patent/DK160325B/da not_active Application Discontinuation

Also Published As

Publication number	Publication date
IL74938A (en)	1988-12-30
EP0179852B1 (fr)	1990-01-24
IL74938A0 (en)	1985-08-30
JPS61501980A (ja)	1986-09-11
DK609585A (da)	1986-01-14
EP0316021A2 (fr)	1989-05-17
WO1985005134A1 (fr)	1985-11-21
EP0316021A3 (fr)	1989-12-13
EP0179852A1 (fr)	1986-05-07
DK609585D0 (da)	1985-12-30
JPH0542400B2 (fr)	1993-06-28
US4589737A (en)	1986-05-20
DE3575581D1 (de)	1990-03-01

Legal Events

Date	Code	Title	Description
1991-12-16	PHB	Application deemed withdrawn due to non-payment or other reasons

Publication	Publication Date	Title
Scheel et al.	1976	Crystal growth of strontium titanate SrTiO3
DK160325B (da)	1991-02-25	Enkeltkrystal mangelagsstrukturer, hvori de enkelte lag skiftevis er fremstillet med eller uden dopningsmiddel, fremgangsmaade til fremstilling af strukturen og optisk filter, fremstillet ud fra strukturen
US4073675A (en)	1978-02-14	Waveguiding epitaxial LiNbO3 films
EP0311038B1 (fr)	1992-07-08	Procédé de formation de couches monocristallines de tellure de cadmium et de mercure
EP0179851B1 (fr)	1988-12-21	PROCEDE DE SYNTHETISATION DE FINES COUCHES DE MONOCRISTAUX DE THIOGALLATE D'ARGENT (AgGaS 2?)
Rivera et al.	1967	Growth of coprus chloride single crystals for optical modulators
US4870027A (en)	1989-09-26	Sensitization pretreatment of Pb-salt epitaxial films for Schottky diodes by sulfur vapor exposure
Sarker	2014	Optical Properties of Al‐and Zr‐Doped Rutile Single Crystals Grown by Tilting‐Mirror‐Type Floating Zone Method and Study of Structure‐Property Relationships by First Principle Calculations
Azoulay et al.	1993	The growth of a cubic, single phase, Cd0. 6Mn0. 4Te single crystal by the vertical gradient freeze method
Nistor et al.	1980	Characterization of cubic ZnS crystals grown from flux
Munster	1976	CRYSTAL GROWTH OF STRONTIUM TITANATE SrTi03
JPH0348431A (ja)	1991-03-01	液相エピタキシャル結晶成長装置
EP0179907B1 (fr)	1988-12-21	Couches de monocristaux de thiogallate d'argent formees par epitaxie a partir d'une solution de chlorure de potassium et de thiogallate d'argent
JPH11322497A (ja)	1999-11-24	ニオブ酸リチウム単結晶膜およびその製造方法
RU2193439C2 (ru)	2002-11-27	Способ получения анизотропной кристаллической пленки (варианты), устройство для осуществления способа (варианты) и анизотропная кристаллическая пленка
JPH0352241A (ja)	1991-03-06	液相エピタキシャル結晶成長方法
JPH02279596A (ja)	1990-11-15	単結晶薄膜の育成方法
Davis et al.	1969	Lamellar Eutectic InSb+ sb Films as Infrared Polarizers
JPH0850312A (ja)	1996-02-20	有機非線形光学結晶の製造方法
JPH0478596B2 (fr)	1992-12-11
Pandey	1985	Growth of Device Quality Bulk Single Crystal of Pb-K-Niobate (PKN) for SAW (Surface Acoustic Wave)-Devices and Electro-Optical Applications.
Paorici et al.	1979	Solid‐phase growth of CuGaS2 crystals
JPH07234427A (ja)	1995-09-05	非線型光学材料の製造方法
DeLucas et al.	0	Combescure, C., see Figuera~ Coriell, SR, see Murray Crosio, M.-P., see Jullien
JPS6048746B2 (ja)	1985-10-29	多層膜光変調素子およびその製造法