JPS61501980A - 多層電気光学的結晶質物質、その製造方法および用途 - Google Patents

多層電気光学的結晶質物質、その製造方法および用途

Info

Publication number
JPS61501980A
JPS61501980A JP60501861A JP50186185A JPS61501980A JP S61501980 A JPS61501980 A JP S61501980A JP 60501861 A JP60501861 A JP 60501861A JP 50186185 A JP50186185 A JP 50186185A JP S61501980 A JPS61501980 A JP S61501980A
Authority
JP
Japan
Prior art keywords
layer
dopant
electro
melt
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60501861A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0542400B2 (fr
Inventor
サツシタル,サナト・ケイ
Original Assignee
ヒユ−ズ・エアクラフト・カンパニ−
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ヒユ−ズ・エアクラフト・カンパニ− filed Critical ヒユ−ズ・エアクラフト・カンパニ−
Publication of JPS61501980A publication Critical patent/JPS61501980A/ja
Publication of JPH0542400B2 publication Critical patent/JPH0542400B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/0009Materials therefor
    • G02F1/0018Electro-optical materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/02Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/46Sulfur-, selenium- or tellurium-containing compounds
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00Single-crystal growth from melt solutions using molten solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP60501861A 1984-05-01 1985-04-10 多層電気光学的結晶質物質、その製造方法および用途 Granted JPS61501980A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/605,736 US4589737A (en) 1984-05-01 1984-05-01 Doped and undoped single crystal multilayered structures
US605,736 1984-05-01

Publications (2)

Publication Number Publication Date
JPS61501980A true JPS61501980A (ja) 1986-09-11
JPH0542400B2 JPH0542400B2 (fr) 1993-06-28

Family

ID=24424998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60501861A Granted JPS61501980A (ja) 1984-05-01 1985-04-10 多層電気光学的結晶質物質、その製造方法および用途

Country Status (7)

Country Link
US (1) US4589737A (fr)
EP (2) EP0316021A3 (fr)
JP (1) JPS61501980A (fr)
DE (1) DE3575581D1 (fr)
DK (1) DK160325B (fr)
IL (2) IL74938A (fr)
WO (1) WO1985005134A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2607628B1 (fr) * 1986-11-27 1989-03-17 Centre Nat Rech Scient Modulateur optique a superreseau
US5212585A (en) * 1990-04-03 1993-05-18 American Optical Corporation Laser protective device
DE4401626A1 (de) * 1994-01-20 1995-07-27 Max Planck Gesellschaft Verfahren und Vorrichtung zur Herstellung kristalliner Schichten
US6795605B1 (en) * 2000-08-01 2004-09-21 Cheetah Omni, Llc Micromechanical optical switch
US7145704B1 (en) 2003-11-25 2006-12-05 Cheetah Omni, Llc Optical logic gate based optical router
US6888661B1 (en) 2002-06-13 2005-05-03 Cheetah Omni, Llc Square filter function tunable optical devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228867A (en) * 1975-08-29 1977-03-04 Sanyo Electric Co Ltd Process for formation of pn junction
JPS5437098A (en) * 1977-08-30 1979-03-19 Toshiba Corp Method of producing gallium phosphide greenish luminous element

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345141A (en) * 1963-11-07 1967-10-03 Perkin Elmer Corp Growth of calcite crystals from a molten flux by slow cooling
US4001076A (en) * 1974-12-11 1977-01-04 Gte Laboratories Incorporated Method for growing thin epitaxial layers of a non-linear, optically active material
US4197008A (en) 1977-12-27 1980-04-08 Hughes Aircraft Company Electro-optic tunable optical filter
US4229073A (en) * 1979-08-10 1980-10-21 Hughes Aircraft Company Iso-index coupled-wave electro-optic filters
US4247166A (en) * 1979-08-15 1981-01-27 Rockwell International Corporation Single plate birefringent optical filter
US4240696A (en) 1979-11-13 1980-12-23 Rockwell International Corporation Multilayer electro-optically tunable filter
US4350413A (en) 1980-04-14 1982-09-21 The United States Of America As Represented By The Secretary Of The Navy Multi-color tunable filter
US4500178A (en) * 1981-10-13 1985-02-19 Rockwell International Corporation Iso-index birefringent filters
US4540461A (en) 1984-04-30 1985-09-10 Hughes Aircraft Company Silver thiogallate single crystal layers epitaxially grown from potassium chloride-silver thiogallate solution
US4534822A (en) 1984-04-30 1985-08-13 Hughes Aircraft Company Method of synthesizing thin, single crystal layers of silver thiogallate (AgGaS2)

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228867A (en) * 1975-08-29 1977-03-04 Sanyo Electric Co Ltd Process for formation of pn junction
JPS5437098A (en) * 1977-08-30 1979-03-19 Toshiba Corp Method of producing gallium phosphide greenish luminous element

Also Published As

Publication number Publication date
IL74938A (en) 1988-12-30
EP0179852B1 (fr) 1990-01-24
IL74938A0 (en) 1985-08-30
DK609585A (da) 1986-01-14
EP0316021A2 (fr) 1989-05-17
WO1985005134A1 (fr) 1985-11-21
EP0316021A3 (fr) 1989-12-13
EP0179852A1 (fr) 1986-05-07
DK609585D0 (da) 1985-12-30
JPH0542400B2 (fr) 1993-06-28
US4589737A (en) 1986-05-20
DE3575581D1 (de) 1990-03-01
DK160325B (da) 1991-02-25

Similar Documents

Publication Publication Date Title
JPS61501980A (ja) 多層電気光学的結晶質物質、その製造方法および用途
US4073675A (en) Waveguiding epitaxial LiNbO3 films
Gotalskaya et al. Pecularities of technology, physical properties and applications of new piezoelectric material langasite (La/sub 3/Ga/sub 5/SiO/sub 14/)
Reznichenko et al. Variations in the microstructure and properties of multicomponent ferroelectric ceramics as a result of its modification by barium
JPS61501984A (ja) チオガリウム酸銀(Ag GaS↓2)の単結晶薄層の製造方法
Eichorst et al. Sol-gel processing of lithium niobate thin layers for optical applications
JPH07234427A (ja) 非線型光学材料の製造方法
Chen et al. Optical properties, micro-crystallization and etching studies of an organic/inorganic hybrid nonlinear optical crystal: 1-Ethyl-3-methyl imidazolium tribromoplumbate (EMITB)
JPH02279596A (ja) 単結晶薄膜の育成方法
JPS5988391A (ja) 圧電体単結晶の製造方法
JPH07126096A (ja) ニオブ酸リチウム単結晶膜の製法
JP2556159B2 (ja) 半導体結晶の製造方法
JPH06219891A (ja) ニオブ酸リチウム単結晶膜の製造方法
JP3030584B2 (ja) 化合物半導体単結晶の製造方法および製造装置
Komatsu et al. Growth and characterization of potassium niobate fiber crystal from liquid with stoichiometric composition by μ‐PD method
JPH0850312A (ja) 有機非線形光学結晶の製造方法
JP3037829B2 (ja) 単結晶育成方法および単結晶
JPH05347438A (ja) 強誘電体薄膜素子
JPS61128619A (ja) タンタル酸リチウム単結晶ウエ−ハ
JPS636829A (ja) 共晶系半導体規則構造の製造方法
JPS60254722A (ja) 半導体装置用基板
JPS5973498A (ja) 圧電体単結晶の製造方法
KR930013221A (ko) 다결정실리콘의 결정성장법
JPH0992588A (ja) シリコン単結晶基板
JPS6048746B2 (ja) 多層膜光変調素子およびその製造法