DK2394308T3 - Metoder til fremstilling af fotovoltaisk materiale, der kan udnytte højenergi fotoner - Google Patents
Metoder til fremstilling af fotovoltaisk materiale, der kan udnytte højenergi fotoner Download PDFInfo
- Publication number
- DK2394308T3 DK2394308T3 DK09785847.6T DK09785847T DK2394308T3 DK 2394308 T3 DK2394308 T3 DK 2394308T3 DK 09785847 T DK09785847 T DK 09785847T DK 2394308 T3 DK2394308 T3 DK 2394308T3
- Authority
- DK
- Denmark
- Prior art keywords
- production
- methods
- high energy
- use high
- photovoltaic material
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/131—Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/IB2009/005023 WO2010089624A1 (en) | 2009-02-06 | 2009-02-06 | Methods for producing photovoltaic material and device able to exploit high energy photons |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK2394308T3 true DK2394308T3 (da) | 2021-07-19 |
Family
ID=41559673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK09785847.6T DK2394308T3 (da) | 2009-02-06 | 2009-02-06 | Metoder til fremstilling af fotovoltaisk materiale, der kan udnytte højenergi fotoner |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9711674B2 (da) |
| EP (1) | EP2394308B1 (da) |
| DK (1) | DK2394308T3 (da) |
| ES (1) | ES2880800T3 (da) |
| HU (1) | HUE055785T2 (da) |
| PL (1) | PL2394308T3 (da) |
| WO (1) | WO2010089624A1 (da) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120204941A1 (en) * | 2011-02-15 | 2012-08-16 | Cargo James T | Allotropic changes in si and use in fabricating materials for solar cells |
| PL2689473T3 (pl) * | 2011-03-25 | 2019-10-31 | Segton Advanced Tech | Przetwornik fotoelektryczny o ulepszonej strukturze emitera opartej ma komponentach krzemowych oraz sposób wytwarzania przetwornika fotoelektrycznego |
| US9255328B2 (en) | 2013-03-15 | 2016-02-09 | Robert Bosch Gmbh | Metamaterial and method for forming a metamaterial using atomic layer deposition |
| CN105229799B (zh) * | 2013-05-14 | 2019-06-14 | 赛腾高新技术公司 | 在硅材料内形成的纳米结构单元及在其中完成它们的制造方法 |
| US10886422B2 (en) | 2013-05-14 | 2021-01-05 | Segton Advanced Technology | Grouped nanostructured units system forming a metamaterial |
| DK3022776T3 (da) | 2013-07-19 | 2020-09-14 | Segton Adt Sas | Arkitektonisk system og beslægtede indbyggede nanomembraner til udleder af en lys-til-elektricitet konverteringsenhed helt i silikone til gigantisk fotokonvertering og fremstillingsmetode af samme |
| FR3009892A1 (fr) | 2013-08-20 | 2015-02-27 | Segton Adt | Ensemble opto-electronique forme d'une plateforme opto-phonique de traitement de la lumiere, de convertisseurs phoniques, et d'au moins un convertisseur lumiere-electricite pour former un capteur solaire |
| PL3042399T3 (pl) | 2013-09-03 | 2021-12-27 | Segton Adt Sas | Jednostka konwertująca optymalnie na elektryczność światło całego spektrum słonecznego |
| US10103547B2 (en) | 2014-02-21 | 2018-10-16 | Solarlytics, Inc. | Method and system for applying electric fields to multiple solar panels |
| US10069306B2 (en) | 2014-02-21 | 2018-09-04 | Solarlytics, Inc. | System and method for managing the power output of a photovoltaic cell |
| CN105374888B (zh) * | 2015-11-24 | 2018-01-12 | 新奥光伏能源有限公司 | 一种太阳能电池的低温银浆栅线的制备方法及电池和组件 |
| CN108074992A (zh) * | 2016-11-18 | 2018-05-25 | 清华大学 | 一种以碳纳米材料薄膜为异质结背场的晶体硅太阳能电池 |
| CN106373870B (zh) * | 2016-11-24 | 2020-06-02 | 清华大学 | 半导体结构以及制备方法 |
| FR3067168A1 (fr) | 2017-06-01 | 2018-12-07 | Segton Advanced Technology | Procede de fabrication d'un convertisseur lumiere-electricite tout en silicium pour une photoconversion geante |
| CN107452819A (zh) * | 2017-09-28 | 2017-12-08 | 湖北工业大学 | 一种多层结构的铜锌锡硫薄膜太阳能电池背电极及其制备方法 |
| US12089424B2 (en) * | 2019-01-16 | 2024-09-10 | The Regents Of The University Of Michigan | Photodetectors with semiconductor active layers for under-display fingerprint and gesture sensors |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6100575A (en) * | 1987-08-19 | 2000-08-08 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device |
| US5935435A (en) * | 1998-04-20 | 1999-08-10 | Hasler; James J. | Paint can strainer |
-
2009
- 2009-02-06 WO PCT/IB2009/005023 patent/WO2010089624A1/en not_active Ceased
- 2009-02-06 EP EP09785847.6A patent/EP2394308B1/en active Active
- 2009-02-06 PL PL09785847T patent/PL2394308T3/pl unknown
- 2009-02-06 HU HUE09785847A patent/HUE055785T2/hu unknown
- 2009-02-06 US US12/998,102 patent/US9711674B2/en not_active Expired - Fee Related
- 2009-02-06 ES ES09785847T patent/ES2880800T3/es active Active
- 2009-02-06 DK DK09785847.6T patent/DK2394308T3/da active
-
2017
- 2017-02-22 US US15/439,618 patent/US20170162741A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| ES2880800T3 (es) | 2021-11-25 |
| US9711674B2 (en) | 2017-07-18 |
| PL2394308T3 (pl) | 2021-11-15 |
| US20170162741A1 (en) | 2017-06-08 |
| US20110162700A1 (en) | 2011-07-07 |
| EP2394308A1 (en) | 2011-12-14 |
| EP2394308B1 (en) | 2021-05-12 |
| HUE055785T2 (hu) | 2021-12-28 |
| WO2010089624A1 (en) | 2010-08-12 |
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