DK2425685T3 - In-situ-plasma/laser-hybridsystem - Google Patents

In-situ-plasma/laser-hybridsystem Download PDF

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Publication number
DK2425685T3
DK2425685T3 DK10770480.1T DK10770480T DK2425685T3 DK 2425685 T3 DK2425685 T3 DK 2425685T3 DK 10770480 T DK10770480 T DK 10770480T DK 2425685 T3 DK2425685 T3 DK 2425685T3
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Denmark
Prior art keywords
plasma
precursor
cathode
plasma device
layer
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DK10770480.1T
Other languages
English (en)
Inventor
Pravansu S Mohanty
Nicholas Anton Moroz
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The Regents Of The Univ Of Michigan Office Of Tech Transfer
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Publication of DK2425685T3 publication Critical patent/DK2425685T3/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder or liquid
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/3478—Geometrical details

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Claims (15)

1. Jævnstrømsplasmasindretning, omfattende: et hus (12); en katode (14, 14'), der er anbragt i huset (12); en ringformet kanal (18), der generelt anbringes grænsende op til katoden (14, 14'), hvor den ringformede kanal (18) er konfigureret til at overføre en plasmagas (20) som fluid; en anode (16), der er anbragt driftsmæssigt grænsende op til katoden (14, 14') for at tillade en elektrisk kommunikation derimellem, som er tilstrækkelig til at antænde en plasmastråle (24) i plasmagassen (20); en prækursorkilde, som indeholder et prækursormateriale; en prækursorudledningsledning (30), som strækker sig gennem mindst en del af katoden (14, 14'), hvor prækursorudledningsledningen (30) afsluttes ved mindst én åbning (34), hvor plasmastrålen (24) er i stand til at medføre, smelte og afsætte i det mindst en del af prækursormaterialerne på et mål; kendetegnet ved, at den mindst én åbning (34) er forskudt fra en spids (28) af katoden (14, 14') for generelt at forhindre afsætning af prækursormateria-let ved spidsen (28) af katoden (14,14').
2. Jævnstrømsplasmasindretning ifølge krav 1, hvor den mindst én åbning (34) er forskudt opstrøms for spidsen (28) af katoden (14, 14') og uden for plasmastrålen (24).
3. Jævnstrømsplasmasindretning ifølge krav 1, hvor den mindst én åbning (34) er forskudt nedstrøms for spidsen (28) og strækker sig ud over spidsen (28) og ind i plasmastrålen (24).
4. Jævnstrømsplasmasindretning ifølge krav 1, hvor prækursormaterialet omfatter nanopartikler.
5. Jævnstrømsplasmasindretning ifølge krav 1, hvor prækursormaterialet er et pulver.
6. Jævnstrømsplasmasindretning ifølge krav 1, yderligere omfattende: en dyse (48), gennem hvilken plasmastrålen (24) overføres.
7. Jævnstrømsplasmasindretning ifølge krav 6, hvor dysen (48) er cirkulær, ellipseformet eller rektangulær.
8. Jævnstrømsplasmasindretning ifølge krav 1, hvor en prækursorudledningsenhed er funktionsmæssigt tilkoblet ved en position nedstrøms foranoden (16), hvor prækursorudledningsenheden modtager prækursormaterialet fra prækursorkilden og forstøver prækursormaterialet sammen med en gas ind i plasmastrålen (24).
9. Jævnstrømsplasmasindretning ifølge krav 1 eller 8, yderligere omfattende: en laserkilde (50), som udleder strålingsenergi på målet efter afsætning af i det mindste en del af prækursormaterialerne.
10. Jævnstrømsplasmasindretning ifølge krav 9, hvor laserkilden (50) ændrer en fortætning af mindst en del af prækursormaterialerne, der er afsat på målet.
11. Jævnstrømsplasmasindretning ifølge krav 1 eller 8, hvor prækursormaterialet er en væske eller en gas.
12. Fremgangsmåde til dannelse af en coating på et mål under anvendelse af en indretning (10) ifølge krav 1, hvor fremgangsmåden omfatter: afsætning af et første lag på et mål under anvendelse af jævnstrømsplasmaindretningen ved at sprøjte et plasma, som har indlagte prækursorer; omsmeltning af mindst en del af det første lag under anvendelse af en laserkilde for at opnå in-situ-fortætning deraf.
13. Fremgangsmåde ifølge krav 12, yderligere omfattende: afsætning af et andet lag på det fortættede første lag af målet under anvendelse af jævnstrømsplasmaindretningen ved at sprøjte plasmaet med de indlagte prækursorer.
14. Fremgangsmåde ifølge krav 13, yderligere omfattende: omsmeltning af mindst en del af det andet lag under anvendelse af en laserkilde (50) for at opnå in-situ-fortætning deraf.
15. Fremgangsmåde ifølge krav 12, hvor en laserstrålebølgelængde og effekt af laserkilden (50) udvælges til at graduere tykkelsen på tværs af det første lag for at forbedre varmechokbestandigheden.
DK10770480.1T 2009-05-01 2010-05-03 In-situ-plasma/laser-hybridsystem DK2425685T3 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US17457609P 2009-05-01 2009-05-01
US23386309P 2009-08-14 2009-08-14
US12/772,342 US8294060B2 (en) 2009-05-01 2010-05-03 In-situ plasma/laser hybrid scheme
PCT/US2010/033383 WO2010127344A2 (en) 2009-05-01 2010-05-03 In-situ plasma/laser hybrid scheme

Publications (1)

Publication Number Publication Date
DK2425685T3 true DK2425685T3 (en) 2017-01-30

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US (1) US8294060B2 (da)
EP (1) EP2425685B1 (da)
KR (1) KR20120036817A (da)
CN (1) CN102450108B (da)
AU (1) AU2010242747B2 (da)
CA (1) CA2760612A1 (da)
DK (1) DK2425685T3 (da)
ES (1) ES2607704T3 (da)
NZ (1) NZ596174A (da)
WO (1) WO2010127344A2 (da)

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Also Published As

Publication number Publication date
AU2010242747A1 (en) 2011-11-24
US20100320176A1 (en) 2010-12-23
EP2425685A4 (en) 2014-11-26
WO2010127344A3 (en) 2011-01-13
EP2425685A2 (en) 2012-03-07
KR20120036817A (ko) 2012-04-18
US8294060B2 (en) 2012-10-23
CN102450108B (zh) 2014-08-20
CN102450108A (zh) 2012-05-09
CA2760612A1 (en) 2010-11-04
EP2425685B1 (en) 2016-10-26
ES2607704T3 (es) 2017-04-03
AU2010242747B2 (en) 2014-03-20
WO2010127344A2 (en) 2010-11-04
NZ596174A (en) 2013-07-26

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