DK24487A - Ionimplantering under anvendelse af alkali- eller jordalkalimetaltetrafluorborat som borionkilde - Google Patents

Ionimplantering under anvendelse af alkali- eller jordalkalimetaltetrafluorborat som borionkilde

Info

Publication number: DK24487A
Authority: DK; Denmark
Prior art keywords: borion; alkalet; tetrafluorborate; soil; alkali
Prior art date: 1985-05-17

Application number

DK024487A

Other languages

English (en)

Other versions

DK24487D0 (da

Inventor

Andre Lagendijk

Shantia Riahi

Original Assignee

Air Prod & Chem

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-05-17

Filing date

1987-01-16

Publication date

1987-01-16

1987-01-16 Application filed by Air Prod & Chem filed Critical Air Prod & Chem

1987-01-16 Publication of DK24487D0 publication Critical patent/DK24487D0/da

1987-01-16 Publication of DK24487A publication Critical patent/DK24487A/da

Links

238000005468 ion implantation Methods 0.000 title 1
239000002184 metal Substances 0.000 title 1
239000002689 soil Substances 0.000 title 1

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation

Landscapes

Chemical & Material Sciences (AREA)
Physics & Mathematics (AREA)
Electromagnetism (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physical Vapour Deposition (AREA)
Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)

DK024487A 1985-05-17 1987-01-16 Ionimplantering under anvendelse af alkali- eller jordalkalimetaltetrafluorborat som borionkilde DK24487A (da)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
PCT/US1985/000932 WO1986006875A1 (en)	1985-05-17	1985-05-17	Ion implant using alkali or alkaline earth metal tetrafluoroborate as boron ion source

Publications (2)

Publication Number	Publication Date
DK24487D0 DK24487D0 (da)	1987-01-16
DK24487A true DK24487A (da)	1987-01-16

Family

ID=22188685

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DK024487A DK24487A (da)	1985-05-17	1987-01-16	Ionimplantering under anvendelse af alkali- eller jordalkalimetaltetrafluorborat som borionkilde

Country Status (7)

Country	Link
EP (1)	EP0221897A1 (da)
JP (1)	JPS62503064A (da)
AU (1)	AU578707B2 (da)
DK (1)	DK24487A (da)
FI (1)	FI870181A0 (da)
NO (1)	NO870194L (da)
WO (1)	WO1986006875A1 (da)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0263815A4 (en) *	1986-04-09	1988-11-29	Schumacher Co J C	SEMICONDUCTOR DOPANT VAPORIZER.

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3477887A (en) *	1966-07-01	1969-11-11	Motorola Inc	Gaseous diffusion method
DE2222736A1 (de) *	1972-05-09	1973-11-22	Siemens Ag	Verfahren zur ionenimplantation
DE2408829C2 (de) *	1974-02-23	1984-03-22	Ibm Deutschland Gmbh, 7000 Stuttgart	Bor-Ionenquell-Material und Verfahren zu seiner Herstellung
US4074139A (en) *	1976-12-27	1978-02-14	Rca Corporation	Apparatus and method for maskless ion implantation
FR2383702A1 (fr) *	1977-03-18	1978-10-13	Anvar	Perfectionnements aux procedes et dispositifs de dopage de materiaux semi-conducteurs
FR2412939A1 (fr) *	1977-12-23	1979-07-20	Anvar	Implanteur d'ions a fort courant
JPS57174467A (en) *	1981-04-20	1982-10-27	Inoue Japax Res Inc	Ion working device
JPS57182956A (en) *	1981-05-07	1982-11-11	Hitachi Ltd	Ion-implantation device
US4385946A (en) *	1981-06-19	1983-05-31	Bell Telephone Laboratories, Incorporated	Rapid alteration of ion implant dopant species to create regions of opposite conductivity
JPS60109260A (ja) *	1983-11-15	1985-06-14	インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション	補償された多結晶シリコン抵抗素子

1985
- 1985-05-17 EP EP85902841A patent/EP0221897A1/en not_active Withdrawn
- 1985-05-17 JP JP60502507A patent/JPS62503064A/ja active Pending
- 1985-05-17 WO PCT/US1985/000932 patent/WO1986006875A1/en not_active Ceased
- 1985-05-17 FI FI870181A patent/FI870181A0/fi not_active Application Discontinuation
- 1985-05-17 AU AU44315/85A patent/AU578707B2/en not_active Ceased
1987
- 1987-01-16 NO NO87870194A patent/NO870194L/no unknown
- 1987-01-16 DK DK024487A patent/DK24487A/da not_active Application Discontinuation

Also Published As

Publication number	Publication date
DK24487D0 (da)	1987-01-16
EP0221897A1 (en)	1987-05-20
WO1986006875A1 (en)	1986-11-20
FI870181A7 (fi)	1987-01-16
FI870181A0 (fi)	1987-01-16
NO870194D0 (no)	1987-01-16
AU578707B2 (en)	1988-11-03
JPS62503064A (ja)	1987-12-03
AU4431585A (en)	1986-12-04
NO870194L (no)	1987-03-10

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DK24487A (da)	1987-01-16	Ionimplantering under anvendelse af alkali- eller jordalkalimetaltetrafluorborat som borionkilde
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Legal Events

Date	Code	Title	Description
1990-01-15	AHB	Application shelved due to non-payment