NO870194L - Ione-implantering med bruk av alkali eller jordalkalie metalltetrafluoroborat som borione-kilde. - Google Patents

Ione-implantering med bruk av alkali eller jordalkalie metalltetrafluoroborat som borione-kilde.

Info

Publication number
NO870194L
NO870194L NO87870194A NO870194A NO870194L NO 870194 L NO870194 L NO 870194L NO 87870194 A NO87870194 A NO 87870194A NO 870194 A NO870194 A NO 870194A NO 870194 L NO870194 L NO 870194L
Authority
NO
Norway
Prior art keywords
charge
tetrafluoroborate
borate
stated
ion implantation
Prior art date
Application number
NO87870194A
Other languages
English (en)
Norwegian (no)
Other versions
NO870194D0 (no
Inventor
Andre Langendijk
Shantia Riahi
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of NO870194D0 publication Critical patent/NO870194D0/no
Publication of NO870194L publication Critical patent/NO870194L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
NO87870194A 1985-05-17 1987-01-16 Ione-implantering med bruk av alkali eller jordalkalie metalltetrafluoroborat som borione-kilde. NO870194L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1985/000932 WO1986006875A1 (en) 1985-05-17 1985-05-17 Ion implant using alkali or alkaline earth metal tetrafluoroborate as boron ion source

Publications (2)

Publication Number Publication Date
NO870194D0 NO870194D0 (no) 1987-01-16
NO870194L true NO870194L (no) 1987-03-10

Family

ID=22188685

Family Applications (1)

Application Number Title Priority Date Filing Date
NO87870194A NO870194L (no) 1985-05-17 1987-01-16 Ione-implantering med bruk av alkali eller jordalkalie metalltetrafluoroborat som borione-kilde.

Country Status (7)

Country Link
EP (1) EP0221897A1 (da)
JP (1) JPS62503064A (da)
AU (1) AU578707B2 (da)
DK (1) DK24487D0 (da)
FI (1) FI870181A0 (da)
NO (1) NO870194L (da)
WO (1) WO1986006875A1 (da)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0263815A4 (en) * 1986-04-09 1988-11-29 Schumacher Co J C SEMICONDUCTOR DOPANT VAPORIZER.

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3477887A (en) * 1966-07-01 1969-11-11 Motorola Inc Gaseous diffusion method
DE2222736A1 (de) * 1972-05-09 1973-11-22 Siemens Ag Verfahren zur ionenimplantation
DE2408829C2 (de) * 1974-02-23 1984-03-22 Ibm Deutschland Gmbh, 7000 Stuttgart Bor-Ionenquell-Material und Verfahren zu seiner Herstellung
US4074139A (en) * 1976-12-27 1978-02-14 Rca Corporation Apparatus and method for maskless ion implantation
FR2383702A1 (fr) * 1977-03-18 1978-10-13 Anvar Perfectionnements aux procedes et dispositifs de dopage de materiaux semi-conducteurs
FR2412939A1 (fr) * 1977-12-23 1979-07-20 Anvar Implanteur d'ions a fort courant
JPS57174467A (en) * 1981-04-20 1982-10-27 Inoue Japax Res Inc Ion working device
JPS57182956A (en) * 1981-05-07 1982-11-11 Hitachi Ltd Ion-implantation device
US4385946A (en) * 1981-06-19 1983-05-31 Bell Telephone Laboratories, Incorporated Rapid alteration of ion implant dopant species to create regions of opposite conductivity
JPS60109260A (ja) * 1983-11-15 1985-06-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 補償された多結晶シリコン抵抗素子

Also Published As

Publication number Publication date
AU578707B2 (en) 1988-11-03
FI870181A7 (fi) 1987-01-16
EP0221897A1 (en) 1987-05-20
DK24487A (da) 1987-01-16
FI870181A0 (fi) 1987-01-16
WO1986006875A1 (en) 1986-11-20
AU4431585A (en) 1986-12-04
DK24487D0 (da) 1987-01-16
JPS62503064A (ja) 1987-12-03
NO870194D0 (no) 1987-01-16

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