DK2955757T3 - Nitrid-effektkomponent og fremgangsmåde til fremstilling deraf - Google Patents

Nitrid-effektkomponent og fremgangsmåde til fremstilling deraf Download PDF

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Publication number
DK2955757T3
DK2955757T3 DK14748959T DK14748959T DK2955757T3 DK 2955757 T3 DK2955757 T3 DK 2955757T3 DK 14748959 T DK14748959 T DK 14748959T DK 14748959 T DK14748959 T DK 14748959T DK 2955757 T3 DK2955757 T3 DK 2955757T3
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DK
Denmark
Prior art keywords
preparation
power component
nitride power
nitride
component
Prior art date
Application number
DK14748959T
Other languages
English (en)
Inventor
Kai Cheng
Original Assignee
Enkris Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Enkris Semiconductor Inc filed Critical Enkris Semiconductor Inc
Application granted granted Critical
Publication of DK2955757T3 publication Critical patent/DK2955757T3/da

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
DK14748959T 2013-02-07 2014-01-27 Nitrid-effektkomponent og fremgangsmåde til fremstilling deraf DK2955757T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310049854.4A CN103117303B (zh) 2013-02-07 2013-02-07 一种氮化物功率器件及其制造方法
PCT/CN2014/071559 WO2014121710A1 (zh) 2013-02-07 2014-01-27 一种氮化物功率器件及其制造方法

Publications (1)

Publication Number Publication Date
DK2955757T3 true DK2955757T3 (da) 2019-12-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DK14748959T DK2955757T3 (da) 2013-02-07 2014-01-27 Nitrid-effektkomponent og fremgangsmåde til fremstilling deraf

Country Status (5)

Country Link
EP (1) EP2955757B1 (da)
JP (1) JP6588340B2 (da)
CN (1) CN103117303B (da)
DK (1) DK2955757T3 (da)
WO (1) WO2014121710A1 (da)

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* Cited by examiner, † Cited by third party
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CN103117303B (zh) * 2013-02-07 2016-08-17 苏州晶湛半导体有限公司 一种氮化物功率器件及其制造方法
CN104347695A (zh) * 2013-07-31 2015-02-11 浙江大学苏州工业技术研究院 一种提高器件纵向耐压能力的半导体装置
CN103500763B (zh) * 2013-10-15 2017-03-15 苏州晶湛半导体有限公司 Ⅲ族氮化物半导体器件及其制造方法
CN103531615A (zh) * 2013-10-15 2014-01-22 苏州晶湛半导体有限公司 氮化物功率晶体管及其制造方法
CN103887325A (zh) * 2013-12-18 2014-06-25 杭州恩能科技有限公司 一种提高器件耐压能力的半导体装置及其制备方法
CN103779208B (zh) * 2014-01-02 2016-04-06 中国电子科技集团公司第五十五研究所 一种低噪声GaN HEMT器件的制备方法
CN103745991B (zh) * 2014-01-22 2016-05-04 西安电子科技大学 基于超结的AlGaN/GaN高压器件及其制作方法
CN104241400B (zh) * 2014-09-05 2017-03-08 苏州捷芯威半导体有限公司 场效应二极管及其制备方法
CN105280725B (zh) * 2015-04-17 2019-03-12 苏州捷芯威半导体有限公司 一种氮化镓二极管及其制作方法
CN112201693A (zh) * 2020-09-30 2021-01-08 锐石创芯（深圳）科技有限公司 一种氮化镓半导体器件和制造方法
CN113380877A (zh) * 2021-06-10 2021-09-10 四川美阔电子科技有限公司 一种双结型场板的功率器件
CN113823684B (zh) * 2021-08-30 2024-07-30 瑶芯微电子科技(上海)有限公司 基于盖帽层和背势垒层的双异质结hemt器件及其制备方法
CN116565030B (zh) * 2023-05-15 2025-06-20 河源市众拓光电科技有限公司 肖特基势垒二极管及其制备方法和应用
CN118676198A (zh) * 2024-03-19 2024-09-20 润新微电子(大连)有限公司 一种耗尽型GaN器件及HEMT级联型器件
CN119789466B (zh) * 2024-11-18 2025-12-12 西安电子科技大学广州研究院 一种线性度提升的射频GaN基HEMT器件及其制备方法

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JP4449467B2 (ja) * 2004-01-28 2010-04-14 サンケン電気株式会社 半導体装置
JP5041701B2 (ja) * 2005-12-07 2012-10-03 日本電信電話株式会社 ヘテロ接合型電界効果トランジスタ
JP2007250721A (ja) * 2006-03-15 2007-09-27 Matsushita Electric Ind Co Ltd 窒化物半導体電界効果トランジスタ構造
JP2007294769A (ja) * 2006-04-26 2007-11-08 Toshiba Corp 窒化物半導体素子
JP2009164158A (ja) * 2007-12-28 2009-07-23 Panasonic Corp 半導体装置及びその製造方法
WO2010001607A1 (ja) * 2008-07-03 2010-01-07 パナソニック株式会社 窒化物半導体装置
JP5524462B2 (ja) * 2008-08-06 2014-06-18 シャープ株式会社 半導体装置
WO2011024367A1 (ja) * 2009-08-27 2011-03-03 パナソニック株式会社 窒化物半導体装置
CN102299071A (zh) * 2010-06-23 2011-12-28 中国科学院微电子研究所 一种提高AlGaN/GaN HEMT频率特性的方法
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CN103117303B (zh) * 2013-02-07 2016-08-17 苏州晶湛半导体有限公司 一种氮化物功率器件及其制造方法

Also Published As

Publication number Publication date
CN103117303A (zh) 2013-05-22
EP2955757A1 (en) 2015-12-16
JP2016510514A (ja) 2016-04-07
EP2955757B1 (en) 2019-09-18
WO2014121710A1 (zh) 2014-08-14
EP2955757A4 (en) 2017-01-11
JP6588340B2 (ja) 2019-10-09
CN103117303B (zh) 2016-08-17

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