DK3028352T3 - Optisk kilde - Google Patents
Optisk kilde Download PDFInfo
- Publication number
- DK3028352T3 DK3028352T3 DK14749961.0T DK14749961T DK3028352T3 DK 3028352 T3 DK3028352 T3 DK 3028352T3 DK 14749961 T DK14749961 T DK 14749961T DK 3028352 T3 DK3028352 T3 DK 3028352T3
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- DK
- Denmark
- Prior art keywords
- optical
- filter
- laser
- reflector
- section
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims description 236
- 239000004065 semiconductor Substances 0.000 claims description 38
- 230000008859 change Effects 0.000 claims description 13
- 230000004044 response Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 7
- 230000003321 amplification Effects 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 239000012788 optical film Substances 0.000 claims 1
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- 238000004891 communication Methods 0.000 description 7
- 238000003491 array Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 101100030140 Chlamydia pneumoniae pmp11 gene Proteins 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1062—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06246—Controlling other output parameters than intensity or frequency controlling the phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0654—Single longitudinal mode emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0656—Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4006—Injection locking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/163—Single longitudinal mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
- Microelectronics & Electronic Packaging (AREA)
Claims (15)
1. Optisk kilde, der omfatter: i) en laserhulrumssektion placeret mellem en første optisk reflektor og en anden optisk reflektor, hvilken laserhulrumssektion omfatter: A. en optisk forstærkningssektion og B. en optisk fasestyringssektion (2) i optisk forbindelse med forstærkningssektionen og konfigureret til kunne ændre den optiske kildes længdemodusfrekvens; og II) et optisk filter (4) eksternt for og i optisk forbindelse med laserhulrumssektionen; hvor: mindst én af den første eller den anden optiske reflektor er en delvis optisk reflektor; og det optiske filter er konfigureret til at modtage laserlyse fra én af den mindst ene delvise optiske reflektor og filtrere det modtagne lys; og, den optiske kilde er konfigureret til at sende filtreret lys ind i én af den mindst ene delvise optiske reflektorer; og kendetegnet ved, at: det optiske filter omfatter et optisk tyndt filmfilter, der omfatter et gennemgangsbåndrespons; og den optiske kilde er konfigureret til at ændre den centrale bølgelængde af gennemgangsresponset for det optiske filter ved at ændre den indfaldsvinkel, som udgangslaserlyset ligger under med det tynde optiske filmfilter.
2. Optisk kilde ifølge krav 1, hvor den optiske fasestyringssektion (2) kan styres uafhængigt af forstærkningssektionen.
3. Optisk kilde ifølge et hvilket som helst foregående krav, hvor en hvilken som helst af den optiske fasestyringssektion (2) eller forstærkningssektioneme kan styres elektronisk.
4. Optisk kilde ifølge et hvilket som helst foregående krav, hvor den optiske fasestyringssektion (2) og forstærkningssektionen hver omfatter et halvledermateriale; hvor optiske fasesektions halvledermateriale omfatter et større båndgab end forstærkningssektionens halvledermateriale.
5. Optisk kilde ifølge et hvilket som helst foregående krav, hvor den første reflektor er en delvis reflektor og er konfigureret til at: I) udsende en del af laserlyset til filtret (4) og II) modtage det filtrerede laserlys ffa filtret.
6. Optisk kilde ifølge krav 5, der endvidere omfatter en tredje optisk reflektor eksternt for laserhulrumssektionen og konfigureret til: I) modtage filtreret laserlys ffa det optiske filter (4) og II) reflektere filtreret laserlys tilbage mod det optiske filter.
7. Optisk kilde ifølge krav 6 hvor: den tredje optiske reflektor i alt væsentligt reflekterer alt filtreret lys tilbage til det optiske filter (4); og den anden optiske reflektor er en delvis optisk reflektor konfigureret til transmittere en del af lyset som et output af den optiske kilde.
8. Optisk kilde ifølge et hvilket som helst foregående krav, hvor: I) den første reflektor er en delvis reflektor og er konfigureret til at udsende en del af laserlyset til filtret (4); og II) den anden reflektor er en delvis reflektor og er konfigureret til at modtage en del af det filtrerede laserlys fra filtret.
9. Optisk kilde ifølge et hvilket som helst foregående krav, hvor den fulde bredde i den halve maksimale højde af filtrets gennemgangsbånd er mindre end laserlysets længdemodusafstand.
10. Optisk kilde ifølge et hvilket som helst foregående krav, der omfatter en flerhed af laserhulrumssektioneme, hvor det optiske filter (4) omfatter et optisk flerbølgelængdefilter, der omfatter en flerhed af optiske gennemgangsbånd.
11. Optisk kilde ifølge krav 10, hvor: I) filtret (4) er konfigureret til at modtage lys ffa en flerhed af fysisk adskilte lysbaner, hvor hver lysbane er forbundet med et forskelligt optisk gennemgangsbånd; og II) hver af flerheden af laserhulrumssektioner er i optisk forbindelse med en forskellig lysbane.
12. Optisk kilde ifølge et hvilket som helst foregående krav, hvor det optiske filter (4) omfatter et athermaliseringsmiddel.
13. Optisk kilde ifølge et hvilket som helst foregående krav, hvor laseren er athermaliseret.
14. Optisk kilde ifølge krav 12, hvor athermaliseringsmidlet omfatter en hvilken som helst af mekanisk bevægelse, termisk eller stressinduceret brydningsindeksændring i filtret (4).
15. Optisk kilde ifølge et hvilket som helst foregående krav, hvor en hvilken som helst af laserhulrumssektionen, det optiske filter (4) og en hvilken som helst tredje reflektor er optisk forbundet mindst delvist ved spredning aflys i frit rum.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1313550.4A GB2516679C (en) | 2013-07-30 | 2013-07-30 | Optical source |
| PCT/GB2014/052326 WO2015015193A1 (en) | 2013-07-30 | 2014-07-30 | Optical source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK3028352T3 true DK3028352T3 (da) | 2018-05-22 |
Family
ID=49167138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK14749961.0T DK3028352T3 (da) | 2013-07-30 | 2014-07-30 | Optisk kilde |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10243327B2 (da) |
| EP (1) | EP3028352B1 (da) |
| JP (1) | JP6735666B2 (da) |
| DK (1) | DK3028352T3 (da) |
| ES (1) | ES2667743T3 (da) |
| GB (1) | GB2516679C (da) |
| PL (1) | PL3028352T3 (da) |
| PT (1) | PT3028352T (da) |
| WO (1) | WO2015015193A1 (da) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2570440A (en) * | 2017-12-19 | 2019-07-31 | Rushmere Tech Limited | Optical source and method of assembling an optical source |
| JP7110081B2 (ja) * | 2018-12-18 | 2022-08-01 | 浜松ホトニクス株式会社 | 制御装置、光学フィルタシステム、制御方法 |
| GB202104651D0 (en) | 2021-03-31 | 2021-05-12 | Rushmere Tech Limited | Optical apparatus for us in an optical network |
| US12566133B2 (en) | 2022-03-15 | 2026-03-03 | Kineolabs, Inc. | Line field swept source oct system and spectroscopy system |
| US20240159948A1 (en) * | 2022-11-15 | 2024-05-16 | Lumentum Operations Llc | Thin film narrow bandwidth transmission filter for optical emitters |
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| JPH02250384A (ja) * | 1989-03-24 | 1990-10-08 | Nippon Telegr & Teleph Corp <Ntt> | 波長可変半導体レーザ光源装置 |
| JP3450180B2 (ja) | 1998-04-20 | 2003-09-22 | 日本電気株式会社 | 波長可変レーザー |
| JP2000035554A (ja) * | 1998-04-23 | 2000-02-02 | Furukawa Electric Co Ltd:The | 光波長調整装置及びそれを用いた光源、光波長分離装置、波長多重光通信システム |
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2013
- 2013-07-30 GB GB1313550.4A patent/GB2516679C/en active Active
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2014
- 2014-07-30 JP JP2016530606A patent/JP6735666B2/ja active Active
- 2014-07-30 US US14/908,918 patent/US10243327B2/en active Active
- 2014-07-30 PT PT147499610T patent/PT3028352T/pt unknown
- 2014-07-30 DK DK14749961.0T patent/DK3028352T3/da active
- 2014-07-30 PL PL14749961T patent/PL3028352T3/pl unknown
- 2014-07-30 ES ES14749961.0T patent/ES2667743T3/es active Active
- 2014-07-30 WO PCT/GB2014/052326 patent/WO2015015193A1/en not_active Ceased
- 2014-07-30 EP EP14749961.0A patent/EP3028352B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016528733A (ja) | 2016-09-15 |
| EP3028352B1 (en) | 2018-02-21 |
| GB2516679A (en) | 2015-02-04 |
| PT3028352T (pt) | 2018-05-09 |
| ES2667743T3 (es) | 2018-05-14 |
| US10243327B2 (en) | 2019-03-26 |
| EP3028352A1 (en) | 2016-06-08 |
| US20160164255A1 (en) | 2016-06-09 |
| GB2516679B (en) | 2018-06-06 |
| PL3028352T3 (pl) | 2018-07-31 |
| GB2516679C (en) | 2019-08-28 |
| JP6735666B2 (ja) | 2020-08-05 |
| WO2015015193A1 (en) | 2015-02-05 |
| GB201313550D0 (en) | 2013-09-11 |
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