DK317984D0 - Katodeforstoevede halvlederfilm af kaedeformet phosphormateriale samt anordninger fremstillet ved hjaelp af samme - Google Patents

Katodeforstoevede halvlederfilm af kaedeformet phosphormateriale samt anordninger fremstillet ved hjaelp af samme

Info

Publication number
DK317984D0
DK317984D0 DK317984A DK317984A DK317984D0 DK 317984 D0 DK317984 D0 DK 317984D0 DK 317984 A DK317984 A DK 317984A DK 317984 A DK317984 A DK 317984A DK 317984 D0 DK317984 D0 DK 317984D0
Authority
DK
Denmark
Prior art keywords
phosphorm
cathode
chain
materials
shaped
Prior art date
Application number
DK317984A
Other languages
English (en)
Other versions
DK317984A (da
Inventor
Rozalie Schachter
Marcello Viscogliosi
Lewis Andrew Bunz
Original Assignee
Stauffer Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stauffer Chemical Co filed Critical Stauffer Chemical Co
Publication of DK317984D0 publication Critical patent/DK317984D0/da
Publication of DK317984A publication Critical patent/DK317984A/da

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/43—Gaseous fillings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/938—Vapor deposition or gas diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
DK317984A 1983-06-29 1984-06-28 Katodeforstoevede halvlederfilm af kaedeformet phosphormateriale samt anordninger fremstillet ved hjaelp af samme DK317984A (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/509,175 US4509066A (en) 1983-06-29 1983-06-29 Sputtered semiconducting films of catenated phosphorus material and devices formed therefrom

Publications (2)

Publication Number Publication Date
DK317984D0 true DK317984D0 (da) 1984-06-28
DK317984A DK317984A (da) 1984-12-30

Family

ID=24025620

Family Applications (1)

Application Number Title Priority Date Filing Date
DK317984A DK317984A (da) 1983-06-29 1984-06-28 Katodeforstoevede halvlederfilm af kaedeformet phosphormateriale samt anordninger fremstillet ved hjaelp af samme

Country Status (9)

Country Link
US (1) US4509066A (da)
EP (1) EP0132323A3 (da)
JP (1) JPS6025223A (da)
KR (1) KR930002664B1 (da)
AU (1) AU2993284A (da)
CA (1) CA1231916A (da)
DK (1) DK317984A (da)
IE (1) IE57032B1 (da)
MX (1) MX169616B (da)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558340A (en) * 1983-06-29 1985-12-10 Stauffer Chemical Company Thin film field effect transistors utilizing a polypnictide semiconductor
US5032472A (en) * 1981-12-30 1991-07-16 Stauffer Chemical Company Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them
US4818636A (en) * 1981-12-30 1989-04-04 Stauffer Chemical Company Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
US4761300A (en) * 1983-06-29 1988-08-02 Stauffer Chemical Company Method of vacuum depostion of pnictide films on a substrate using a pnictide bubbler and a sputterer
US4678266A (en) * 1983-06-29 1987-07-07 Stauffer Chemical Company Use of pnictide films for wave-guiding in opto-electronic devices
IL72244A (en) * 1983-06-29 1988-03-31 Stauffer Chemical Co Passivation and insulation of iii-v semiconductor devices with pnictides
US4732659A (en) * 1984-06-11 1988-03-22 Stauffer Chemical Company Sputtering method for making thin film field effect transistor utilizing a polypnictide semiconductor
US4942442A (en) * 1986-04-11 1990-07-17 American Telephone And Telegraph Company, At&T Bell Laboratories Device including a radiation sensor
JPS63196045U (da) * 1987-06-06 1988-12-16
US6030458A (en) * 1997-02-14 2000-02-29 Chorus Corporation Phosphorus effusion source
BE1012802A3 (fr) * 1999-07-28 2001-03-06 Cockerill Rech & Dev Dispositif electroluminescent et son procede de fabrication.
JP2010260139A (ja) 2009-05-08 2010-11-18 Ntn Corp 遠隔操作型加工ロボット
WO2010137603A1 (ja) 2009-05-29 2010-12-02 Ntn株式会社 遠隔操作型アクチュエータ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2419585A1 (fr) * 1978-03-07 1979-10-05 Thomson Csf Procede d'obtention en phase gazeuse d'une couche epitaxiale de phosphure d'indium, et appareil d'application de ce procede
US4620968A (en) * 1981-12-30 1986-11-04 Stauffer Chemical Company Monoclinic phosphorus formed from vapor in the presence of an alkali metal

Also Published As

Publication number Publication date
IE841637L (en) 1984-12-29
CA1231916A (en) 1988-01-26
KR930002664B1 (ko) 1993-04-07
JPS6025223A (ja) 1985-02-08
IE57032B1 (en) 1992-03-25
US4509066A (en) 1985-04-02
DK317984A (da) 1984-12-30
KR850000791A (ko) 1985-03-09
EP0132323A3 (en) 1986-11-26
EP0132323A2 (en) 1985-01-30
MX169616B (es) 1993-07-14
AU2993284A (en) 1985-01-03

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Legal Events

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