DK3458878T3 - Partikeldetektor fremstillet af et halvledermateriale - Google Patents

Partikeldetektor fremstillet af et halvledermateriale Download PDF

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Publication number
DK3458878T3
DK3458878T3 DK17723993.6T DK17723993T DK3458878T3 DK 3458878 T3 DK3458878 T3 DK 3458878T3 DK 17723993 T DK17723993 T DK 17723993T DK 3458878 T3 DK3458878 T3 DK 3458878T3
Authority
DK
Denmark
Prior art keywords
semiconductor material
detector made
particulate detector
particulate
semiconductor
Prior art date
Application number
DK17723993.6T
Other languages
English (en)
Inventor
Wilfried Vivian Roland Vervisch
Laurent Ottaviani
Stéphane Biondo
Ep Vervisch Vanessa Laurence Jill Hurtado
Original Assignee
Univ Aix Marseille
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Aix Marseille, Centre Nat Rech Scient filed Critical Univ Aix Marseille
Application granted granted Critical
Publication of DK3458878T3 publication Critical patent/DK3458878T3/da

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/26—Measuring radiation intensity with resistance detectors

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DK17723993.6T 2016-05-17 2017-05-15 Partikeldetektor fremstillet af et halvledermateriale DK3458878T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1654382A FR3051557A1 (fr) 2016-05-17 2016-05-17 Detecteur de particules realise dans un materiau semi-conducteur
PCT/EP2017/061637 WO2017198630A1 (fr) 2016-05-17 2017-05-15 Detecteur de particules realise dans un materiau semi-conducteur

Publications (1)

Publication Number Publication Date
DK3458878T3 true DK3458878T3 (da) 2020-09-28

Family

ID=57184536

Family Applications (1)

Application Number Title Priority Date Filing Date
DK17723993.6T DK3458878T3 (da) 2016-05-17 2017-05-15 Partikeldetektor fremstillet af et halvledermateriale

Country Status (6)

Country Link
US (1) US10591620B2 (da)
EP (1) EP3458878B1 (da)
CA (1) CA3024395C (da)
DK (1) DK3458878T3 (da)
FR (1) FR3051557A1 (da)
WO (1) WO2017198630A1 (da)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3099293A1 (fr) * 2019-07-26 2021-01-29 Université D'aix Marseille Dispositif monobloc de détection de particules à matériau semi-conducteur
FR3100343B1 (fr) 2019-09-02 2021-08-27 Centre Nat Rech Scient Dosimetre
FR3112400B1 (fr) 2020-07-10 2022-06-17 Univ Aix Marseille Procédé de fabrication d’une tête d’irradiation d’une cible avec un faisceau de particules ionisantes
FR3118300B1 (fr) * 2020-12-23 2022-12-09 Univ Aix Marseille Detecteur de particules comprenant une region poreuse realisee dans un materiau semi-conducteur et procede de fabrication associe
FR3119246B1 (fr) 2021-01-27 2023-02-24 Centre Nat Rech Scient Procede de fabrication d'un detecteur des flux d'un premier et d'un deuxieme rayonnements ionisants

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3783157T2 (de) * 1986-04-11 1993-04-22 American Telephone & Telegraph Strahlungsdetektoranordnung.
EP0736780B1 (en) * 1995-04-07 2002-07-24 Rikagaku Kenkyusho X-ray beam position monitor and its position measurement method
US7253434B2 (en) * 2002-10-29 2007-08-07 President And Fellows Of Harvard College Suspended carbon nanotube field effect transistor
JP5096747B2 (ja) * 2006-03-02 2012-12-12 株式会社神戸製鋼所 ビーム検出部材およびそれを用いたビーム検出器
US7586167B2 (en) * 2006-05-05 2009-09-08 Virgin Islands Microsystems, Inc. Detecting plasmons using a metallurgical junction
US7816651B2 (en) * 2007-09-27 2010-10-19 Varian Medical Systems, Inc. High detective quantum efficiency X-ray detectors
US9515211B2 (en) * 2013-07-26 2016-12-06 University Of South Carolina Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

Also Published As

Publication number Publication date
WO2017198630A1 (fr) 2017-11-23
FR3051557A1 (fr) 2017-11-24
EP3458878B1 (fr) 2020-07-01
US20190277983A1 (en) 2019-09-12
CA3024395A1 (fr) 2017-11-23
EP3458878A1 (fr) 2019-03-27
US10591620B2 (en) 2020-03-17
CA3024395C (fr) 2024-03-26

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