DK488785A - Metalorganiske hybridforbindelser, deres fremstilling og anvendelse til metalorganisk kemisk dampafsaetning - Google Patents

Metalorganiske hybridforbindelser, deres fremstilling og anvendelse til metalorganisk kemisk dampafsaetning Download PDF

Info

Publication number: DK488785A
Authority: DK; Denmark
Prior art keywords: metal organic; organic chemical; compounds; hydride; vapour deposition
Prior art date: 1984-10-25

Application number

DK488785A

Other languages

English (en)

Other versions

DK488785D0 (da

Inventor

Benjamin C Hui

Jorg Lorberth

Andreas A Melas

Original Assignee

Thiokol Morton Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-10-25

Filing date

1985-10-24

Publication date

1986-04-26

1985-10-24 Application filed by Thiokol Morton Inc filed Critical Thiokol Morton Inc

1985-10-24 Publication of DK488785D0 publication Critical patent/DK488785D0/da

1986-04-26 Publication of DK488785A publication Critical patent/DK488785A/da

Links

150000001875 compounds Chemical class 0.000 title abstract 5
239000002184 metal Substances 0.000 title 1
238000004326 stimulated echo acquisition mode for imaging Methods 0.000 title 1
239000000126 substance Substances 0.000 title 1
238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract 3
125000001424 substituent group Chemical group 0.000 abstract 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 2
125000000217 alkyl group Chemical group 0.000 abstract 2
229910052797 bismuth Inorganic materials 0.000 abstract 2
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 2
125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 abstract 2
ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Chemical group C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 abstract 2
150000004678 hydrides Chemical class 0.000 abstract 2
238000000034 method Methods 0.000 abstract 2
230000000737 periodic effect Effects 0.000 abstract 2
125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 2
229910052711 selenium Inorganic materials 0.000 abstract 2
239000011669 selenium Substances 0.000 abstract 2
229910052714 tellurium Inorganic materials 0.000 abstract 2
PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 1
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
239000004411 aluminium Substances 0.000 abstract 1
229910052782 aluminium Inorganic materials 0.000 abstract 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
229910052790 beryllium Inorganic materials 0.000 abstract 1
ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 abstract 1
229910052799 carbon Inorganic materials 0.000 abstract 1
239000002131 composite material Substances 0.000 abstract 1
-1 hydride compound Chemical class 0.000 abstract 1
229910052749 magnesium Inorganic materials 0.000 abstract 1
239000011777 magnesium Substances 0.000 abstract 1
229910052757 nitrogen Inorganic materials 0.000 abstract 1
150000002902 organometallic compounds Chemical class 0.000 abstract 1
229910052760 oxygen Inorganic materials 0.000 abstract 1
239000001301 oxygen Substances 0.000 abstract 1
229910052717 sulfur Inorganic materials 0.000 abstract 1
239000011593 sulfur Substances 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C391/00—Compounds containing selenium
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C395/00—Compounds containing tellurium
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/02—Magnesium compounds
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/06—Zinc compounds
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/08—Cadmium compounds
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/10—Mercury compounds
- C07F3/12—Aromatic substances containing mercury
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/02—Boron compounds
- C07F5/027—Organoboranes and organoborohydrides
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/28—Phosphorus compounds with one or more P—C bonds
- C07F9/50—Organo-phosphines
- C07F9/505—Preparation; Separation; Purification; Stabilisation
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/66—Arsenic compounds
- C07F9/70—Organo-arsenic compounds
- C07F9/72—Aliphatic compounds
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/90—Antimony compounds
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/94—Bismuth compounds
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
- C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Engineering & Computer Science (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Inorganic Chemistry (AREA)
Health & Medical Sciences (AREA)
Life Sciences & Earth Sciences (AREA)
Biochemistry (AREA)
General Health & Medical Sciences (AREA)
Molecular Biology (AREA)
Chemical Vapour Deposition (AREA)
Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

DK488785A 1984-10-25 1985-10-24 Metalorganiske hybridforbindelser, deres fremstilling og anvendelse til metalorganisk kemisk dampafsaetning DK488785A (da)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US06/664,645 US4720560A (en)	1984-10-25	1984-10-25	Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition

Publications (2)

Publication Number	Publication Date
DK488785D0 DK488785D0 (da)	1985-10-24
DK488785A true DK488785A (da)	1986-04-26

Family

ID=24666848

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DK488785A DK488785A (da)	1984-10-25	1985-10-24	Metalorganiske hybridforbindelser, deres fremstilling og anvendelse til metalorganisk kemisk dampafsaetning

Country Status (10)

Country	Link
US (1)	US4720560A (da)
EP (1)	EP0181706B1 (da)
JP (1)	JPS61104079A (da)
KR (1)	KR900001008B1 (da)
AT (1)	ATE48002T1 (da)
BR (1)	BR8505338A (da)
CA (1)	CA1251804A (da)
DE (1)	DE3574257D1 (da)
DK (1)	DK488785A (da)
IL (1)	IL76716A0 (da)

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DE3514410A1 (de) *	1985-04-20	1986-10-23	Schering AG, Berlin und Bergkamen, 1000 Berlin	Neue alkalimetallaluminiumdialkyldihydride und deren loesungen in aromatischen kohlenwasserstoffen
JPH0627327B2 (ja) *	1987-06-30	1994-04-13	インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン	Ｉｂ族金属の付着方法
EP0305144A3 (en) *	1987-08-24	1989-03-08	Canon Kabushiki Kaisha	Method of forming crystalline compound semiconductor film
DE3742525C2 (de) *	1987-12-11	1998-02-19	Hertz Inst Heinrich	Verfahren zur Herstellung von Metallalkylverbindungen und deren Verwendung
US4915988A (en) *	1988-06-22	1990-04-10	Georgia Tech Research Corporation	Chemical vapor deposition of group IIA metals and precursors therefor
US4992305A (en) *	1988-06-22	1991-02-12	Georgia Tech Research Corporation	Chemical vapor deposition of transistion metals
US4942252A (en) *	1988-08-16	1990-07-17	Cvd Incorporated	Synthesis of phosphorus and arsenic, halides and hydrides
NL8802458A (nl) *	1988-10-07	1990-05-01	Philips Nv	Werkwijze voor de vervaardiging van een epitaxiale indiumfosfide-laag op een substraatoppervlak.
US5147688A (en) *	1990-04-24	1992-09-15	Cvd, Inc.	MOCVD of indium oxide and indium/tin oxide films on substrates
DE4104076C2 (de) *	1991-02-11	1994-03-31	Bruker Analytische Messtechnik	Vorrichtung zur kernresonanzspektrometrischen Messung von chemischen und/oder physikalischen Reaktionsabläufen
US5300185A (en) *	1991-03-29	1994-04-05	Kabushiki Kaisha Toshiba	Method of manufacturing III-V group compound semiconductor
DE4214224A1 (de) *	1992-04-30	1993-11-04	Merck Patent Gmbh	Verwendung von elementorganischen verbindungen zur abscheidung des elementes auf substraten
US5380895A (en) *	1993-02-10	1995-01-10	Bandgap Technology Corporation	Method for the synthesis of metal alkyls and metal aryls
US5502227A (en) *	1993-07-27	1996-03-26	Cvd, Incorporated	Liquid indium source
JPH07153700A (ja) *	1993-11-26	1995-06-16	Sony Corp	有機金属気相成長法及び発光素子作製方法
US6211106B1 (en) *	1998-06-18	2001-04-03	Industrial Technology Research Institute	Groups IIA and IIIA based catalyst composition for preparing high-syndiotacticity polystyrene
DE60301152T8 (de) *	2002-01-17	2006-04-27	Shipley Co., L.L.C., Marlborough	Organoindiumverbindungen zur Verwendung in der chemischen Dampfphasenabscheidung
DE102005037076B3 (de) *	2005-08-03	2007-01-25	Otto-Von-Guericke-Universität Magdeburg	Verfahren zur Herstellung von gemischt substituierte Organobismuthverbindungen und deren Verwendung
US20070141374A1 (en) *	2005-12-19	2007-06-21	General Electric Company	Environmentally resistant disk
WO2014078263A1 (en) *	2012-11-14	2014-05-22	Dow Global Technologies Llc	Methods of producing trimethylgallium
KR20210046854A (ko) *	2013-08-22	2021-04-28	우미코레 아게 운트 코 카게	알킬인듐 화합물의 제조 방법 및 이의 용도
EP3173507A1 (de) *	2015-11-25	2017-05-31	Umicore AG & Co. KG	Verfahren zur metallorganischen gasphasenabscheidung unter verwendung von lösungen von indiumalkylverbindungen in kohlenwasserstoffen
KR102922966B1 (ko)	2020-12-04	2026-02-03	가부시키가이샤 고준도가가쿠 겐큐쇼	인듐 및 1종 이상의 다른 금속을 함유하는 막을 제조하기 위한 증착용 원료 및 인듐 및 1종 이상의 다른 금속을 함유하는 막의 제조 방법

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1984
- 1984-10-25 US US06/664,645 patent/US4720560A/en not_active Expired - Lifetime
1985
- 1985-10-15 IL IL76716A patent/IL76716A0/xx unknown
- 1985-10-15 AT AT85307400T patent/ATE48002T1/de not_active IP Right Cessation
- 1985-10-15 EP EP85307400A patent/EP0181706B1/en not_active Expired
- 1985-10-15 DE DE8585307400T patent/DE3574257D1/de not_active Expired
- 1985-10-21 CA CA000493480A patent/CA1251804A/en not_active Expired
- 1985-10-24 KR KR1019850007847A patent/KR900001008B1/ko not_active Expired
- 1985-10-24 DK DK488785A patent/DK488785A/da not_active Application Discontinuation
- 1985-10-25 JP JP60239257A patent/JPS61104079A/ja active Granted
- 1985-10-25 BR BR8505338A patent/BR8505338A/pt unknown

Also Published As

Publication number	Publication date
EP0181706B1 (en)	1989-11-15
EP0181706A1 (en)	1986-05-21
DE3574257D1 (en)	1989-12-21
BR8505338A (pt)	1986-08-05
JPS61104079A (ja)	1986-05-22
KR900001008B1 (ko)	1990-02-24
CA1251804A (en)	1989-03-28
ATE48002T1 (de)	1989-12-15
JPH0357188B2 (da)	1991-08-30
IL76716A0 (en)	1986-02-28
DK488785D0 (da)	1985-10-24
US4720560A (en)	1988-01-19
KR860003266A (ko)	1986-05-21

Legal Events

Date	Code	Title	Description
1990-06-18	AHB	Application shelved due to non-payment

Publication	Publication Date	Title
DK488785D0 (da)	1985-10-24	Metalorganiske hybridforbindelser, deres fremstilling og anvendelse til metalorganisk kemisk dampafsaetning
ATE51402T1 (de)	1990-04-15	Infrarot-absorber.
DE69111029D1 (de)	1995-08-10	Kondensierte heterocyclische Verbindungen, ihre Herstellung und Verwendung.
HUP9603023A2 (hu)	1998-01-28	Szubsztituált (szulfonimid-amido)-benzoil-guanidin-származékok, eljárás előállításukra és az ezeket tartalmazó gyógyszerkészítmények
FI873402A0 (fi)	1987-08-05	Aromatisk metylenbindningar av en aromatisk olja innehaollande metylenbindningar.
DE3865004D1 (de)	1991-10-24	Cyclische oder bicyclische aluminium-, gallium-, oder indium-organische verbindungen und ihre verwendung zur gasphasenabscheidung des metalls auf substraten.
HUT47099A (en)	1989-01-30	Process for producing pyridine derivatives and pharmaceutical compositions comprising such compounds
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