DK72185A - Phosphor og hoeje phosphorpolyphosphidbarrierer i kvantekildeanordninger - Google Patents
Phosphor og hoeje phosphorpolyphosphidbarrierer i kvantekildeanordninger Download PDFInfo
- Publication number
- DK72185A DK72185A DK72185A DK72185A DK72185A DK 72185 A DK72185 A DK 72185A DK 72185 A DK72185 A DK 72185A DK 72185 A DK72185 A DK 72185A DK 72185 A DK72185 A DK 72185A
- Authority
- DK
- Denmark
- Prior art keywords
- phosphorpolyphosphide
- barriers
- phosphor
- source devices
- quantity source
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
- H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
- H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
- H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
- H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US58114084A | 1984-02-17 | 1984-02-17 | |
| US69526885A | 1985-01-28 | 1985-01-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DK72185D0 DK72185D0 (da) | 1985-02-15 |
| DK72185A true DK72185A (da) | 1985-08-18 |
Family
ID=27078232
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK72185A DK72185A (da) | 1984-02-17 | 1985-02-15 | Phosphor og hoeje phosphorpolyphosphidbarrierer i kvantekildeanordninger |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0153170A3 (da) |
| DK (1) | DK72185A (da) |
| NO (1) | NO850612L (da) |
-
1985
- 1985-02-15 DK DK72185A patent/DK72185A/da not_active Application Discontinuation
- 1985-02-15 NO NO850612A patent/NO850612L/no unknown
- 1985-02-15 EP EP85301029A patent/EP0153170A3/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP0153170A2 (en) | 1985-08-28 |
| DK72185D0 (da) | 1985-02-15 |
| EP0153170A3 (en) | 1986-12-10 |
| NO850612L (no) | 1985-08-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AHB | Application shelved due to non-payment |