NO850612L - Halvleder-innretning og fremgangsmaate til fremstilling derav - Google Patents

Halvleder-innretning og fremgangsmaate til fremstilling derav

Info

Publication number: NO850612L
Authority: NO; Norway
Prior art keywords: semiconductor; layer; barrier layer; barrier; phosphorus
Prior art date: 1984-02-17

Application number

NO850612A

Other languages

English (en)

Norwegian (no)

Inventor

Diego J Olego

Original Assignee

Stauffer Chemical Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-02-17

Filing date

1985-02-15

Publication date

1985-08-19

1985-02-15 Application filed by Stauffer Chemical Co filed Critical Stauffer Chemical Co

1985-08-19 Publication of NO850612L publication Critical patent/NO850612L/no

Links

239000004065 semiconductor Substances 0.000 title claims description 72
238000000034 method Methods 0.000 title claims description 10
230000004888 barrier function Effects 0.000 claims description 68
229910052698 phosphorus Inorganic materials 0.000 claims description 37
239000011574 phosphorus Substances 0.000 claims description 37
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 35
239000000463 material Substances 0.000 claims description 18
229910052783 alkali metal Inorganic materials 0.000 claims description 8
150000001340 alkali metals Chemical class 0.000 claims description 8
238000000151 deposition Methods 0.000 claims description 5
238000004519 manufacturing process Methods 0.000 claims 2
101000962649 Vespa xanthoptera Mastoparan-X Proteins 0.000 claims 1
239000010408 film Substances 0.000 description 6
150000001875 compounds Chemical class 0.000 description 4
229910005540 GaP Inorganic materials 0.000 description 3
GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
238000010586 diagram Methods 0.000 description 3
230000005669 field effect Effects 0.000 description 3
238000009413 insulation Methods 0.000 description 3
238000002161 passivation Methods 0.000 description 3
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
229910001218 Gallium arsenide Inorganic materials 0.000 description 2
230000008021 deposition Effects 0.000 description 2
239000004615 ingredient Substances 0.000 description 2
239000000203 mixture Substances 0.000 description 2
230000000737 periodic effect Effects 0.000 description 2
238000002360 preparation method Methods 0.000 description 2
239000010409 thin film Substances 0.000 description 2
230000005533 two-dimensional electron gas Effects 0.000 description 2
238000001771 vacuum deposition Methods 0.000 description 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
229910000673 Indium arsenide Inorganic materials 0.000 description 1
KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
239000000853 adhesive Substances 0.000 description 1
230000001070 adhesive effect Effects 0.000 description 1
229910052787 antimony Inorganic materials 0.000 description 1
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
229910052785 arsenic Inorganic materials 0.000 description 1
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
229910052797 bismuth Inorganic materials 0.000 description 1
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
239000002131 composite material Substances 0.000 description 1
238000010276 construction Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
239000003574 free electron Substances 0.000 description 1
VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
239000007789 gas Substances 0.000 description 1
229910002804 graphite Inorganic materials 0.000 description 1
239000010439 graphite Substances 0.000 description 1
WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
239000007791 liquid phase Substances 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
230000005693 optoelectronics Effects 0.000 description 1
230000003014 reinforcing effect Effects 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
239000000126 substance Substances 0.000 description 1
VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
- H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
- H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
- H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
- H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials

Landscapes

Recrystallisation Techniques (AREA)
Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Design And Manufacture Of Integrated Circuits (AREA)
Bipolar Transistors (AREA)

NO850612A 1984-02-17 1985-02-15 Halvleder-innretning og fremgangsmaate til fremstilling derav NO850612L (no)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US58114084A	1984-02-17	1984-02-17
US69526885A	1985-01-28	1985-01-28

Publications (1)

Publication Number	Publication Date
NO850612L true NO850612L (no)	1985-08-19

Family

ID=27078232

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NO850612A NO850612L (no)	1984-02-17	1985-02-15	Halvleder-innretning og fremgangsmaate til fremstilling derav

Country Status (3)

Country	Link
EP (1)	EP0153170A3 (da)
DK (1)	DK72185A (da)
NO (1)	NO850612L (da)

1985
- 1985-02-15 DK DK72185A patent/DK72185A/da not_active Application Discontinuation
- 1985-02-15 NO NO850612A patent/NO850612L/no unknown
- 1985-02-15 EP EP85301029A patent/EP0153170A3/en not_active Withdrawn

Also Published As

Publication number	Publication date
DK72185A (da)	1985-08-18
EP0153170A2 (en)	1985-08-28
DK72185D0 (da)	1985-02-15
EP0153170A3 (en)	1986-12-10

Publication	Publication Date	Title
Preinesberger et al.	1998	Formation of dysprosium silicide wires on Si (001)
US6103604A (en)	2000-08-15	High electron mobility transparent conductor
Farrow et al.	1981	MBE‐grown fluoride films: A new class of epitaxial dielectrics
US4088515A (en)	1978-05-09	Method of making semiconductor superlattices free of misfit dislocations
EP2150970B1 (de)	2011-11-09	Nitridhalbleiterbauelement-schichtstruktur auf einer gruppe-iv-substratoberfläche und herstellungsverfahren
EP0279989B1 (en)	1994-06-22	Semiconductor heterostructure having a compositionally varying region comprising SnSi
US20060003500A1 (en)	2006-01-05	Epitaxial siox barrier/insulation layer
EP0312237A2 (en)	1989-04-19	Interface charge enhancement in delta-doped heterostructure
Labram et al.	2015	Exploring two‐dimensional transport phenomena in metal oxide heterointerfaces for next‐generation, high‐performance, thin‐film transistor technologies
DE10392313T5 (de)	2005-10-06	Auf Galliumnitrid basierende Vorrichtungen und Herstellungsverfahren
KR100467179B1 (ko)	2005-01-24	ＳｉＧｅＣ 반도체결정 및 그 제조방법
NO850612L (no)	1985-08-19	Halvleder-innretning og fremgangsmaate til fremstilling derav
US5338942A (en)	1994-08-16	Semiconductor projections having layers with different lattice constants
CN103367428A (zh)	2013-10-23	基于刻蚀的一维电子气GaN基HEMT器件及制备方法
EP0092643B1 (en)	1989-01-25	Ballistic conduction transistor
JP2001518707A (ja)	2001-10-16	オープンフォームの製造方法
JPS61245579A (ja)	1986-10-31	半導体装置と製法
DE112021001428B4 (de)	2025-10-16	Verfahren zur Herstellung einer Halbleiterstruktur
JPH098285A (ja)	1997-01-10	ヘテロ接合半導体デバイス
JP6424735B2 (ja)	2018-11-21	Ｃａ−Ｇｅ−Ｆ系化合物、複合材料、及び半導体
CN85104043A (zh)	1986-11-26	在量子阱器件中的磷势垒和高磷多磷化合物势垒
US11674237B2 (en)	2023-06-13	Method for fabricating a crystalline metal-phosphide hetero-layer by converting first and second crystalline metal-source layers into first and second crystalline metal phosphide layers
CN115036366A (zh)	2022-09-09	半导体装置及其制作方法
TWI844049B (zh)	2024-06-01	具有包含氮化鋁銦的阻障層的半導體結構及其生長方法
JP2616634B2 (ja)	1997-06-04	電界効果トランジスタ