EP0053719A1 - Procédé pour le décapage de surfaces métalliques - Google Patents
Procédé pour le décapage de surfaces métalliques Download PDFInfo
- Publication number
- EP0053719A1 EP0053719A1 EP81109230A EP81109230A EP0053719A1 EP 0053719 A1 EP0053719 A1 EP 0053719A1 EP 81109230 A EP81109230 A EP 81109230A EP 81109230 A EP81109230 A EP 81109230A EP 0053719 A1 EP0053719 A1 EP 0053719A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- solution
- etching
- copper
- hydrogen peroxide
- etching solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000002184 metal Substances 0.000 title claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052802 copper Inorganic materials 0.000 claims abstract description 18
- 239000010949 copper Substances 0.000 claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 17
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 16
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 4
- 238000001816 cooling Methods 0.000 claims description 6
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 6
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 6
- 230000001376 precipitating effect Effects 0.000 claims description 3
- 239000000243 solution Substances 0.000 description 29
- 150000002978 peroxides Chemical class 0.000 description 18
- 239000007921 spray Substances 0.000 description 5
- 238000003421 catalytic decomposition reaction Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- RAOSIAYCXKBGFE-UHFFFAOYSA-K [Cu+3].[O-]P([O-])([O-])=O Chemical compound [Cu+3].[O-]P([O-])([O-])=O RAOSIAYCXKBGFE-UHFFFAOYSA-K 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- YXJYBPXSEKMEEJ-UHFFFAOYSA-N phosphoric acid;sulfuric acid Chemical compound OP(O)(O)=O.OS(O)(=O)=O YXJYBPXSEKMEEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/46—Regeneration of etching compositions
Definitions
- the invention relates to a method for etching metal surfaces, in particular printed circuits, as specified in the preamble of claim 1.
- etching with copper chloride and regeneration with hydrochloric acid / hydrogen peroxide or chlorine gas are known.
- etching is generally carried out using ammoniacal-alkaline etching agents; iron-III chloride or ammonium persulfate is also used in special cases.
- the copper sulfate formed in this reaction is more suitable than copper chloride for further use. There is also the possibility of creating a closed cycle without waste water problems within the etching process and of recovering the etched copper.
- the copper is preferably removed electrolytically from the etching solution.
- the copper is removed from the etching solution by cooling the etching solution and thereby precipitating copper sulfate.
- etching solution and the hydrogen peroxide are sprayed separately onto the circuit to be etched.
- any contact between the peroxide and the etched-off copper in the etching solution is reliably avoided before the substances meet in the reaction area.
- the etching process of the printed circuit boards, which are coated with copper, a lacquer, photoresist material or metal resist such as lead tin, between guide rollers 1 in the horizontal direction takes place in the interior of a housing 2, which has a collecting container 3 for the etching solution dripping from the printed circuit boards below the feed path of the printed circuit boards.
- the printed circuit boards are inserted along the feed path formed by the guide rollers 1 into the housing 2 and leave it again on the opposite side.
- stations for pretreatment and stations for post-treatment of the printed circuit boards are connected upstream or downstream of the etching housing.
- the hydrogen peroxide is added to the etching solution only shortly before it is applied to the circuit to be etched or even only during the application, in an amount which is sufficient for the respective etching process, but which is so it is small that after the etching process, the solution dripping from the circuit contains essentially no more peroxide.
- the amount of peroxide added is relatively easy to adjust and regulate.
- This method has the advantage that catalytic decomposition of the peroxide in the etching solution collected after the etching process can no longer take place since there is practically no peroxide in this etching solution.
- the etching solution can therefore be pumped back into a storage tank in a manner known per se and used again for a new etching process. Nevertheless, the etching process proceeds in the desired manner, because in the reaction area, i.e. on the circuit, the required amount of peroxide is added to the etching solution, so that the desired decomposition of the peroxide, oxidation of the metal and etching of the copper take place here.
- the etched copper is at least partially removed from the etching solution after each etching process.
- sulfuric acid phosphoric acid can also be used, in which case corresponding phosphates are formed.
- This etchant can be fed directly to the collecting container 11 and applied again to the printed circuit boards by means of the pump 12 with the addition of the appropriate amount of the peroxide.
- This procedure also has the advantage that the etching solution supplied to the collecting container 11 contains little copper, so that when this low-copper etching solution is mixed with peroxide from the storage container, the catalytic decomposition of the peroxide is reduced. It is quite possible To apply the etching solution to the printed circuit boards, there are spray nozzles 4 and 5 above and below the feed path, from which the etching solution can be sprayed against the printed circuit board.
- the etching solution collected in the collecting container 3 is fed by means of a suitable pump 6 via a line 7 either to an electrolysis vessel 8 or to a cooling station 9. After passing through the electrolysis vessel or the cooling station, a pump 10 conveys the etching solution into a collecting container 11.
- the etching solution is fed from this collecting container 11 to the spray nozzles 4 and 5 via a line 13 by means of a pump 12.
- this is fed from a storage container for oxidizing agent separated from the collecting container 11 by means of a pump 15 to the line 13, so that a mixture of the etching solution and the oxidizing agent is sprayed onto the printed circuit boards through the spray nozzles. It is also possible to spray the oxidizing agent evenly through separate nozzles.
- the oxidizing agent in the storage container 14 is hydrogen peroxide.
- the acid gets onto the circuit boards together with the hydrogen peroxide.
- the etching process there follows the following formulas: Lich to produce the mixture of etching solution and peroxide shortly before it is applied to the printed circuit boards and sprayed through common nozzles.
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3046477 | 1980-12-10 | ||
| DE19803046477 DE3046477A1 (de) | 1980-12-10 | 1980-12-10 | "verfahren zum aetzen von metalloberflaechen" |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0053719A1 true EP0053719A1 (fr) | 1982-06-16 |
| EP0053719B1 EP0053719B1 (fr) | 1987-09-09 |
Family
ID=6118774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP81109230A Expired EP0053719B1 (fr) | 1980-12-10 | 1981-10-29 | Procédé pour le décapage de surfaces métalliques |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP0053719B1 (fr) |
| DE (2) | DE3046477A1 (fr) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0222347A3 (fr) * | 1985-11-11 | 1988-11-30 | HANS HÖLLMÜLLER MASCHINENBAU GMBH & CO. | Procédé et appareil pour le décapage de pièces composées au moins partiellement de métal, de préférence de cuivre |
| EP0222348A3 (fr) * | 1985-11-11 | 1989-01-25 | HANS HÖLLMÜLLER MASCHINENBAU GMBH & CO. | Appareil de décapage de pièces composées au moins partiellement de métal, de préférence de cuivre |
| WO1993010280A1 (fr) * | 1991-11-13 | 1993-05-27 | Hughes Aircraft Company | Procede et dispositif de decontamination |
| US5244000A (en) * | 1991-11-13 | 1993-09-14 | Hughes Aircraft Company | Method and system for removing contaminants |
| WO1997016379A1 (fr) * | 1995-10-30 | 1997-05-09 | Chemasol Spol.S.R.O. | Procede de production de monohydrate de sulfate cuivrique |
| EP0885985A1 (fr) * | 1997-05-05 | 1998-12-23 | Akzo Nobel N.V. | Procédé de traitement d'un métal |
| RU2131484C1 (ru) * | 1997-05-05 | 1999-06-10 | Акцо Нобель Н.В. | Способ обработки металла |
| US5958147A (en) * | 1997-05-05 | 1999-09-28 | Akzo Nobel N.V. | Method of treating a metal |
| DE102017128630A1 (de) * | 2017-12-01 | 2019-06-19 | Wen Yao Chang | Leiterplatte mit einem siliziumsubstrat und fertigungsverfahren dafür |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4206626A1 (de) * | 1992-03-03 | 1993-09-09 | Heidelberger Druckmasch Ag | Verfahren zur verringerung von dublieren beim anlaufen einer bogendruckmaschine |
| DE4402788A1 (de) * | 1994-01-31 | 1995-08-10 | Emil Krechen Industrievertretu | Verfahren zum Abtragen von Metallen |
| DE102013112045A1 (de) | 2013-10-31 | 2015-04-30 | Holger Manfred Schmid | Vorrichtung und Verfahren zur Bearbeitung von metallischen Oberflächen mit einer Ätzflüssigkeit |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1176892A (en) * | 1965-04-28 | 1970-01-07 | Fmc Corp | Reactivation of Etching Solutions |
| DE1906304A1 (de) * | 1969-02-08 | 1970-09-03 | Wiederhold Fa Hermann | Verfahren und Vorrichtung zum kontinuierlichen AEtzen |
| US3756957A (en) * | 1971-03-15 | 1973-09-04 | Furukawa Electric Co Ltd | Solutions for chemical dissolution treatment of metallic materials |
| DE2358683A1 (de) * | 1973-11-24 | 1975-06-05 | Kalman Von Dipl Phys Soos | Verfahren zum beizen und aetzen von metallen |
| FR2392100A1 (fr) * | 1977-05-27 | 1978-12-22 | Alfachimici Spa | Solution acide pour corrosion selective du cuivre |
-
1980
- 1980-12-10 DE DE19803046477 patent/DE3046477A1/de not_active Withdrawn
-
1981
- 1981-10-29 DE DE8181109230T patent/DE3176426D1/de not_active Expired
- 1981-10-29 EP EP81109230A patent/EP0053719B1/fr not_active Expired
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1176892A (en) * | 1965-04-28 | 1970-01-07 | Fmc Corp | Reactivation of Etching Solutions |
| DE1906304A1 (de) * | 1969-02-08 | 1970-09-03 | Wiederhold Fa Hermann | Verfahren und Vorrichtung zum kontinuierlichen AEtzen |
| US3756957A (en) * | 1971-03-15 | 1973-09-04 | Furukawa Electric Co Ltd | Solutions for chemical dissolution treatment of metallic materials |
| DE2358683A1 (de) * | 1973-11-24 | 1975-06-05 | Kalman Von Dipl Phys Soos | Verfahren zum beizen und aetzen von metallen |
| FR2392100A1 (fr) * | 1977-05-27 | 1978-12-22 | Alfachimici Spa | Solution acide pour corrosion selective du cuivre |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0222347A3 (fr) * | 1985-11-11 | 1988-11-30 | HANS HÖLLMÜLLER MASCHINENBAU GMBH & CO. | Procédé et appareil pour le décapage de pièces composées au moins partiellement de métal, de préférence de cuivre |
| EP0222348A3 (fr) * | 1985-11-11 | 1989-01-25 | HANS HÖLLMÜLLER MASCHINENBAU GMBH & CO. | Appareil de décapage de pièces composées au moins partiellement de métal, de préférence de cuivre |
| WO1993010280A1 (fr) * | 1991-11-13 | 1993-05-27 | Hughes Aircraft Company | Procede et dispositif de decontamination |
| US5244000A (en) * | 1991-11-13 | 1993-09-14 | Hughes Aircraft Company | Method and system for removing contaminants |
| AU651253B2 (en) * | 1991-11-13 | 1994-07-14 | Raytheon Company | Method and system for removing contaminants |
| WO1997016379A1 (fr) * | 1995-10-30 | 1997-05-09 | Chemasol Spol.S.R.O. | Procede de production de monohydrate de sulfate cuivrique |
| EP0885985A1 (fr) * | 1997-05-05 | 1998-12-23 | Akzo Nobel N.V. | Procédé de traitement d'un métal |
| RU2131484C1 (ru) * | 1997-05-05 | 1999-06-10 | Акцо Нобель Н.В. | Способ обработки металла |
| US5958147A (en) * | 1997-05-05 | 1999-09-28 | Akzo Nobel N.V. | Method of treating a metal |
| DE102017128630A1 (de) * | 2017-12-01 | 2019-06-19 | Wen Yao Chang | Leiterplatte mit einem siliziumsubstrat und fertigungsverfahren dafür |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3176426D1 (en) | 1987-10-22 |
| DE3046477A1 (de) | 1982-07-08 |
| EP0053719B1 (fr) | 1987-09-09 |
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