EP0075331A2 - Dispositif pour la compensation d'effets de corrosion dans des circuits intégrés semi-conducteurs - Google Patents

Dispositif pour la compensation d'effets de corrosion dans des circuits intégrés semi-conducteurs Download PDF

Info

Publication number: EP0075331A2
Authority: EP; European Patent Office
Prior art keywords: ring; arrangement according; positive ions; semiconductor circuits; integrated semiconductor
Prior art date: 1981-09-23
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP82108787A

Other languages

German (de)

English (en)

Other versions

EP0075331B1 (fr

EP0075331A3 (en

Inventor

Rolf Jürgen Dr. Dipl.-Phys. Goetz

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Siemens AG

Siemens Corp

Original Assignee

Siemens AG

Siemens Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-09-23

Filing date

1982-09-22

Publication date

1983-03-30

1982-09-22 Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG

1982-09-22 Priority to AT82108787T priority Critical patent/ATE39035T1/de

1983-03-30 Publication of EP0075331A2 publication Critical patent/EP0075331A2/fr

1985-03-20 Publication of EP0075331A3 publication Critical patent/EP0075331A3/de

1988-11-30 Application granted granted Critical

1988-11-30 Publication of EP0075331B1 publication Critical patent/EP0075331B1/fr

Status Expired legal-status Critical Current

Links

Images

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W42/00—Arrangements for protection of devices

Definitions

the present invention relates to an arrangement for compensating for corrosion effects caused by rapidly moving positive ions in insulation oxides of integrated semiconductor circuits.
the present invention has for its object to provide a way to compensate for the corrosion effects caused by the positive ions mentioned.
This object is achieved according to the invention in an arrangement of the type mentioned at the outset by a ring provided on the surface of the semiconductor circuit and connected to a negative voltage and made of a material which is resistant to corrosion due to positive ions in the operation of semiconductor circuits.
FIG. 1 shows a schematic representation of an integrated semiconductor circuit with a ring according to the invention.
a ring 11 made of a material is applied to the surface of a schematically illustrated semiconductor circuit 10, which is formed by an oxide level, which is resistant to corrosion due to positive ions during operation of semiconductor circuits.
Polysilicon or silicides such as tantalum silicide, molybdenum silicide or tungsten silicide, are suitable as materials.
connection electrodes (pads) 12 via which the electrical circuit realized in the integrated semiconductor circuit 10 is accessible to the outside.
a conductive connection 13 in the form of an aluminum conductor track or a polysilicon conductor track can lead to a connection electrode 12, to which the negative voltage for the ring 11 is then applied.
the ring 11 connected to the negative voltage thus acts as a trap for the rapidly moving positive ions dissolved in the oxide on the surface of the semiconductor circuit.
the measure of a ring connected to negative voltage as corrosion protection is possible because practically only positive ions, but no negative ions, are dissolved in insulation oxides of semiconductor components and integrated circuits.
Ring 11 may also be interrupted, for example for guiding conductor tracks to the connection electrodes 12. Such a measure is shown schematically in the figure by a conductor track 14 leading to a connection electrode 12.

Landscapes

Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Electrodes Of Semiconductors (AREA)
Formation Of Insulating Films (AREA)
Wire Bonding (AREA)

EP82108787A 1981-09-23 1982-09-22 Dispositif pour la compensation d'effets de corrosion dans des circuits intégrés semi-conducteurs Expired EP0075331B1 (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
AT82108787T ATE39035T1 (de)	1981-09-23	1982-09-22	Anordnung zur kompensation von korrosionseffekten in integrierten halbleiterschaltkreisen.

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DE19813137914 DE3137914A1 (de)	1981-09-23	1981-09-23	Anordnung zur kompensation von korrosionseffekten inintegrierten halbleiterschaltkreisen
DE3137914		1981-09-23

Publications (3)

Publication Number	Publication Date
EP0075331A2 true EP0075331A2 (fr)	1983-03-30
EP0075331A3 EP0075331A3 (en)	1985-03-20
EP0075331B1 EP0075331B1 (fr)	1988-11-30

Family

ID=6142440

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP82108787A Expired EP0075331B1 (fr)	1981-09-23	1982-09-22	Dispositif pour la compensation d'effets de corrosion dans des circuits intégrés semi-conducteurs

Country Status (5)

Country	Link
US (1)	US4583109A (fr)
EP (1)	EP0075331B1 (fr)
JP (1)	JPS5864065A (fr)
AT (1)	ATE39035T1 (fr)
DE (2)	DE3137914A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2533750A1 (fr) *	1982-09-24	1984-03-30	Hitachi Ltd	Dispositif electronique, notamment dispositif a circuits integres a semiconducteurs
EP0923126A1 (fr) *	1997-12-05	1999-06-16	STMicroelectronics S.r.l.	Dispositif électronique intégré comprenant une structure de protection contre des contraintes mécaniques

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
IT1185731B (it) *	1984-12-07	1987-11-12	Rca Corp	Sistema metallico di tenuta marginale,a due livelli,per un dispositivo semicondutore
US4764800A (en) *	1986-05-07	1988-08-16	Advanced Micro Devices, Inc.	Seal structure for an integrated circuit
JP3077315B2 (ja) *	1990-10-29	2000-08-14	セイコーエプソン株式会社	半導体装置
KR102312630B1 (ko)	2014-09-30	2021-10-18	삼성전자주식회사	반도체 패키지 및 그 제조방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3573571A (en) *	1967-10-13	1971-04-06	Gen Electric	Surface-diffused transistor with isolated field plate
US3611071A (en) *	1969-04-10	1971-10-05	Ibm	Inversion prevention system for semiconductor devices
GB1251456A (fr) *	1969-06-12	1971-10-27
US3602782A (en) *	1969-12-05	1971-08-31	Thomas Klein	Conductor-insulator-semiconductor fieldeffect transistor with semiconductor layer embedded in dielectric underneath interconnection layer
JPS5218070B2 (fr) *	1972-10-04	1977-05-19
US3811076A (en) *	1973-01-02	1974-05-14	Ibm	Field effect transistor integrated circuit and memory
US3961358A (en) *	1973-02-21	1976-06-01	Rca Corporation	Leakage current prevention in semiconductor integrated circuit devices
DE2603747A1 (de) *	1976-01-31	1977-08-04	Licentia Gmbh	Integrierte schaltungsanordnung
US4063274A (en) *	1976-12-10	1977-12-13	Rca Corporation	Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors
US4122483A (en) *	1977-09-30	1978-10-24	Rca Corporation	Semiconductor device having reduced leakage current
JPS5599722A (en) *	1979-01-26	1980-07-30	Hitachi Ltd	Preparation of semiconductor device

1981
- 1981-09-23 DE DE19813137914 patent/DE3137914A1/de not_active Withdrawn
1982
- 1982-08-23 US US06/410,511 patent/US4583109A/en not_active Expired - Fee Related
- 1982-09-20 JP JP57163786A patent/JPS5864065A/ja active Pending
- 1982-09-22 AT AT82108787T patent/ATE39035T1/de not_active IP Right Cessation
- 1982-09-22 DE DE8282108787T patent/DE3279261D1/de not_active Expired
- 1982-09-22 EP EP82108787A patent/EP0075331B1/fr not_active Expired

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2533750A1 (fr) *	1982-09-24	1984-03-30	Hitachi Ltd	Dispositif electronique, notamment dispositif a circuits integres a semiconducteurs
EP0923126A1 (fr) *	1997-12-05	1999-06-16	STMicroelectronics S.r.l.	Dispositif électronique intégré comprenant une structure de protection contre des contraintes mécaniques
US6489228B1 (en)	1997-12-05	2002-12-03	Stmicroelectronics S.R.L.	Integrated electronic device comprising a mechanical stress protection structure
US6605873B1 (en)	1997-12-05	2003-08-12	Stmicroelectronics S.R.L.	Integrated electronic device comprising a mechanical stress protection structure

Also Published As

Publication number	Publication date
DE3279261D1 (en)	1989-01-05
US4583109A (en)	1986-04-15
EP0075331B1 (fr)	1988-11-30
JPS5864065A (ja)	1983-04-16
DE3137914A1 (de)	1983-04-07
ATE39035T1 (de)	1988-12-15
EP0075331A3 (en)	1985-03-20

Legal Events

Date	Code	Title	Description
1983-01-29	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
1983-03-30	AK	Designated contracting states	Designated state(s): AT DE FR GB IT
1985-01-15	PUAL	Search report despatched	Free format text: ORIGINAL CODE: 0009013
1985-03-20	AK	Designated contracting states	Designated state(s): AT DE FR GB IT
1985-07-10	17P	Request for examination filed	Effective date: 19850426
1986-08-20	17Q	First examination report despatched	Effective date: 19860702
1987-08-12	R17C	First examination report despatched (corrected)	Effective date: 19870624
1988-10-15	GRAA	(expected) grant	Free format text: ORIGINAL CODE: 0009210
1988-11-30	AK	Designated contracting states	Kind code of ref document: B1 Designated state(s): AT DE FR GB IT
1988-11-30	REF	Corresponds to:	Ref document number: 39035 Country of ref document: AT Date of ref document: 19881215 Kind code of ref document: T
1988-12-29	GBT	Gb: translation of ep patent filed (gb section 77(6)(a)/1977)
1989-01-05	REF	Corresponds to:	Ref document number: 3279261 Country of ref document: DE Date of ref document: 19890105
1989-01-27	ET	Fr: translation filed
1989-02-22	ITF	It: translation for a ep patent filed
1989-08-25	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: AT Payment date: 19890825 Year of fee payment: 8
1989-08-31	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: GB Payment date: 19890831 Year of fee payment: 8
1989-09-28	PGFP	Annual fee paid to national office [announced via postgrant information from national office to epo]	Ref country code: FR Payment date: 19890928 Year of fee payment: 8
1989-09-28	PLBE	No opposition filed within time limit	Free format text: ORIGINAL CODE: 0009261
1989-09-28	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT
1989-09-30	ITTA	It: last paid annual fee
1989-11-15	26N	No opposition filed
1990-06-01	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: DE Effective date: 19900601
1990-09-22	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: GB Effective date: 19900922 Ref country code: AT Effective date: 19900922
1991-05-22	GBPC	Gb: european patent ceased through non-payment of renewal fee
1991-05-30	PG25	Lapsed in a contracting state [announced via postgrant information from national office to epo]	Ref country code: FR Effective date: 19910530
1991-07-26	REG	Reference to a national code	Ref country code: FR Ref legal event code: ST

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