EP0082639A2 - Procédé de traitement utilisant un faisceau d'ions focalisé - Google Patents

Procédé de traitement utilisant un faisceau d'ions focalisé Download PDF

Info

Publication number
EP0082639A2
EP0082639A2 EP82306567A EP82306567A EP0082639A2 EP 0082639 A2 EP0082639 A2 EP 0082639A2 EP 82306567 A EP82306567 A EP 82306567A EP 82306567 A EP82306567 A EP 82306567A EP 0082639 A2 EP0082639 A2 EP 0082639A2
Authority
EP
European Patent Office
Prior art keywords
ion beam
etching
ion
focused ion
blanking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP82306567A
Other languages
German (de)
English (en)
Other versions
EP0082639A3 (en
EP0082639B1 (fr
Inventor
Tadahiro Takigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Publication of EP0082639A2 publication Critical patent/EP0082639A2/fr
Publication of EP0082639A3 publication Critical patent/EP0082639A3/en
Application granted granted Critical
Publication of EP0082639B1 publication Critical patent/EP0082639B1/fr
Expired legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/961—Ion beam source and generation

Definitions

  • the present invention relates to a processing method using a focused ion beam and, more particularly, to a method for forming a three-dimensional pattern by etching using a focused ion beam.
  • etching methods are known as techniques for forming micropatterns on a specimen such as a silicon wafer in the manufacturing process of semiconductor devices.
  • the etching method using an ion beam in particular, is receiving a lot of attention.
  • the ion beam method is classified, on the basis of the physical mechanism, into sputter etching, accelerated ion etching, ion beam assist etching, reactive ion etching and the like.
  • a method is selected in accordance with the actual etching purpose.
  • Figs. 1A and 1B are sectional views showing etching steps using sputter etching.
  • a specimen 1 to be processed such as a silicon wafer
  • the structure is irradiated all at once with an Ar + ion beam or the like having a relatively large and uniform spot diameter.
  • processing regions 3 are formed by etching, as shown in Fig. 1B.
  • desired regions are selectively etched in this manner by irradiation with an ion beam having a relatively large and uniform spot diameter.
  • the conventional method described above is subject to various drawbacks. Since the entire structure is irradiated all at one with an ion beam, the etching depth becomes uniform at all locations of the structure. For this reason, if etching to different depths is to be performed at selected regions, a plurality of etching steps and a plurality of masks are required, resulting in complex procedures. Furthermore, it is difficult to form patterns 4 and 5 of arbitrary cross-sectional shape, as shown in Fig. 2.
  • a processing method using a focused ion beam which uses a focused ion beam radiation apparatus comprising an ion gun and an ion optical system for producing a micro ion beam, and has a deflecting function to scan the ion beam on a wafer surface and a blanking function to blank the ion beam.
  • desired etching depths of the wafer are preset as a function of location.
  • the dose of the ion beam, the acceleration voltage, or the etching time may be varied in accordance with the preset data.
  • the etching depth may be varied according to an etching location of the wafer, a pattern of arbitrary cross-sectional shape may be formed on an arbitrarily selected region of the sample.
  • Etching by accelerated ion etching is performed by bombarding a sample with ions and then etching with a 3% hydrogen fluoride solution , for example.
  • the etching depth is determined in accordance with the ion dose, the type of ions, the etching time and the like.
  • the etching depth increases with an increase in the acceleration energy. Therefore, a pattern having a cross-sectional shape as shown in Fig. 2 may be formed by controlling the etching time of a micro ion beam, the type of ions, the ion dose, the acceleration voltage and the like.
  • the present invention is based on such a principle.
  • Fig. 4 is a schematic block diagram of a focused ion beam scanner which is used in an embodiment of the present invention.
  • an emitter 11 held by a wire-like holder 13 is cooled by liquid nitrogen or liquid helium.
  • Argon gas 12 is liquefied on the surface of the emitter 11.
  • a thermal conductor 14 arranged below a cooler 15 is for cooling the emitter 11.
  • An injection nozzle 16 is for injecting argon gas from an argon gas cylinder 17.
  • a valve 18 controls the injection rate of the argon gas.
  • Grid electrodes 19 and ion drawing electrodes 20 form an ion gun to produce a micro ion beam. Blanking electrodes 21 turn the ion beam ON/OFF.
  • a blanking aperture mask 22 is disposed below the blanking electrodes 21. Electrostatic lenses or condenser lenses 23 of Einzel type focus the ion beam. Reference numeral 24 denotes the deflection coil of a mass analyzer of EXB type. An ion selection aperture mask 25 selects the ions to be bombarded onto the specimen. A deflector 26 scans the ion beam on the specimen surface. Electrostatic lenses or objective lenses 27 are also of Einzel type.
  • a specimen 28 such as a silicon wafer is placed on a specimen table 29. The specimen table 29 is driven by a drive motor 30, and its position is detected by a laser position detector 31. A reflected ion detector 32 is used for registration, and a secondary ion detector 33 is arranged therebelow.
  • A/D converters 34 and 35 convert the analog signals from the detectors 32 and 33, respectively, into digital signals.
  • a computer 36 is used to perform various types of control operations, and an interface 37 is connected thereto.
  • a high voltage power supply 38 is used to supply power to the ion gun.
  • Reference numeral 39 denotes a bias power supply.
  • a high voltage power supply 40 is used to supply power to the ion drawing electrodes 20.
  • Reference numeral 41 denotes a pattern signal generator.
  • a high voltage power supply 42 is used to supply power to the condenser lenses 23.
  • a power supply 43 is used to produce an electric field and a magnetic field of the mass analyzer 24.
  • a deflecting power supply 44 is used to supply power to the deflector 26.
  • a high voltage power supply 4F is used to supply power to the objective lenses 27.
  • the focused ion beam scanner of the configuration described above operates in the same manner as does a known electron beam scanner, for example, as desclosed in USP 4063103.
  • the ion dose in the specimen surface such as a silicon wafer may be varied in the following manner. Assume that voltage VO is applied to the blanking electrodes 21 to turn OFF (blank) the ion beam. Assume also that the deflection voltage has a stepped waveform as shown in Fig. 5B to scan the ion beam in a stepped form. Let At stand for a time interval in which the ion beam stays at a location xn, the pulse width of the blanking signal being variable in units of (1/10)At.
  • the ion beam is OFF at locations x0, xl, x5 and x6.
  • the ON time of the ion beam is (9/10)At at locations x2, x3 and x4.
  • the ON time of the ion beam is (5/10)At at locations x7, x8 and x9. In this manner, the dose of the ion beam may be varied in 10 steps at each location.
  • a silicon wafer 51 is annealed in an oxygen atmosphere for 30 minutes to form 0 an oxide film 52 of about 1,000 A thickness on the upper surface of the silicon wafer 51.
  • Reference numeral 53 denotes an alignment mark. Referring to the alignment mark 53, a focused beam of B ions is irradiated onto a prospective field region and the oxide film 52 is removed. Subsequently, the silicon wafer 51 is heated at 1,000°C to form a thermal oxide ° film (sample) 54 of 5,000 A thickness as shown in Fig. 6B.
  • the oxide film 54 is etched. At this time, the positions of regions 55 and 56 are determined with reference to the alignment mark 53 and the etching depths at the regions 55 and 56 are varied as shown in Fig. 6C.
  • the oxide film 54 has a ° thickness of 200 A at the region 55 and a thickness of 500 A at the region 56.
  • the regions 55 and 56 correspond to the element formation region for forming the MOS transistor.
  • a molybdenum film 57 of 1,000 A thickness is deposited on the oxide film 54.
  • the molybdenum film 57 and the oxide film 54 are selectively etched to form a gate electrode 58, as shown in Fig. 6E.
  • reference numeral 59 denotes a prospective drain region
  • reference numeral 60 denotes a prospective source region.
  • the thickness of the oxide film 54 at a portion 58a contiguous with the prospective drain region 59 is greater than that at a portion 58b contiguous with the prospective source region 60. For this reason, the punch-through phenomenon is prevented, and a high breakdown voltage is obtained.
  • the etching depth may be varied by varying the ion dose, the ON time, the acceleration voltage and the like of a focused ion beam, thus providing a simpler and shorter method for manufacturing LSIs.
  • the width of the gate electrode 58 is very narrow.
  • the stepped processing of the oxide film 54 may be realized only by the method of the present invention. During selective etching of the molybdenum film 57 and the oxide film 54 for forming the gate electrode 58, the secondary ions are analyzed by the secondary ion detector. Therefore, completion of the etching process may be easily confirmed to make the method of the present invention even easier to put into practice.
  • the present invention is not limited to the embodiment described above.
  • the present invention can be applied to formation of contact holes for a multilayer wiring structure as shown in Fig. 7.
  • reference numeral 71 denotes a silicon wafer; 72, a first insulating oxide film; 73, a first metal wiring layer; 74, a second insulating oxide film; 75, a second metal wiring layer; and 76, 77 and 78, contact holes, respectively.
  • the etching depths are varied by performing etching of regions to be processed and then analyzing the secondary ion analysis results. Etching as shown in Fig. 2 can also be performed by presetting the etching depth as a function of location.
  • etching process completion of the etching process is confirmed by analyzing the secondary ions.
  • it may alternatively be performed by ion-excited X-rays, ion-excited fluorescent rays, ion-excited Auger electrons or the like.
  • the present invention is not limited to sputter etching and may be similarly applied to accelerated ion etching. Various other changes and modifications may be made within the spirit and scope of the present invention.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
EP82306567A 1981-12-18 1982-12-09 Procédé de traitement utilisant un faisceau d'ions focalisé Expired EP0082639B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP205016/81 1981-12-18
JP56205016A JPS58106750A (ja) 1981-12-18 1981-12-18 フオ−カスイオンビ−ム加工方法

Publications (3)

Publication Number Publication Date
EP0082639A2 true EP0082639A2 (fr) 1983-06-29
EP0082639A3 EP0082639A3 (en) 1984-05-16
EP0082639B1 EP0082639B1 (fr) 1988-08-10

Family

ID=16500043

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82306567A Expired EP0082639B1 (fr) 1981-12-18 1982-12-09 Procédé de traitement utilisant un faisceau d'ions focalisé

Country Status (4)

Country Link
US (1) US4457803A (fr)
EP (1) EP0082639B1 (fr)
JP (1) JPS58106750A (fr)
DE (1) DE3278895D1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985004983A1 (fr) * 1984-04-20 1985-11-07 Mta Központi Fizikai Kutató Intézete Procede et agencement pour irradier avec des ions des materiaux a l'etat solide
EP0124358A3 (en) * 1983-04-30 1986-03-26 Kabushiki Kaisha Toshiba Method for disconnecting interconnection using focused ion beam
EP0151811A3 (en) * 1983-12-29 1986-12-30 Fujitsu Limited Ion implantation apparatus and method for maskless processing
EP0571727A1 (fr) * 1992-04-23 1993-12-01 International Business Machines Corporation Dispositif et méthode de déposition par faisceau d'ions focalisé en contrôlant les paramètres du faisceau
US5434422A (en) * 1991-09-04 1995-07-18 Hitachi, Ltd. Sample position controller in focused ion beam system
WO2000065306A1 (fr) * 1999-04-21 2000-11-02 Seiko Instruments Inc. Technique de mesure de l'epaisseur d'un film
US20250308840A1 (en) * 2024-03-29 2025-10-02 Fei Company Sample preparation with non-uniform dose

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168652A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd 素子修正方法及びその装置
JPS60136315A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd マイクロイオンビ−ム加工方法およびその装置
JPH0770299B2 (ja) * 1984-04-05 1995-07-31 株式会社日立製作所 イオンビーム加工装置および表面加工方法
US4930439A (en) * 1984-06-26 1990-06-05 Seiko Instruments Inc. Mask-repairing device
DE3672378D1 (de) * 1985-04-23 1990-08-09 Seiko Instr Inc Vorrichtung zur abscheidung eines elektrisch leitenden und/oder nichtleitenden materials auf einem gegenstand.
US4639301B2 (en) * 1985-04-24 1999-05-04 Micrion Corp Focused ion beam processing
AT386297B (de) * 1985-09-11 1988-07-25 Ims Ionen Mikrofab Syst Ionenstrahlgeraet und verfahren zur ausfuehrung von aenderungen, insbes. reparaturen an substraten unter verwendung eines ionenstrahlgeraetes
US4698129A (en) * 1986-05-01 1987-10-06 Oregon Graduate Center Focused ion beam micromachining of optical surfaces in materials
JPS63307736A (ja) * 1987-06-10 1988-12-15 Hitachi Ltd イオンビ−ム加工方法
US4835399A (en) * 1986-08-22 1989-05-30 Hitachi, Ltd. Charged particle beam apparatus
NL8602176A (nl) * 1986-08-27 1988-03-16 Philips Nv Ionen bundel apparaat voor nabewerking van patronen.
US4740267A (en) * 1987-02-20 1988-04-26 Hughes Aircraft Company Energy intensive surface reactions using a cluster beam
JPH0622195B2 (ja) * 1987-02-26 1994-03-23 東芝機械株式会社 荷電ビ−ム描画装置
US4734158A (en) * 1987-03-16 1988-03-29 Hughes Aircraft Company Molecular beam etching system and method
US4758304A (en) * 1987-03-20 1988-07-19 Mcneil John R Method and apparatus for ion etching and deposition
US4877479A (en) * 1987-03-20 1989-10-31 University Of New Mexico Method and apparatus for ion deposition and etching
AT393925B (de) * 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind
US4874460A (en) * 1987-11-16 1989-10-17 Seiko Instruments Inc. Method and apparatus for modifying patterned film
JP2650930B2 (ja) * 1987-11-24 1997-09-10 株式会社日立製作所 超格子構作の素子製作方法
JPH0664338B2 (ja) * 1988-02-02 1994-08-22 三菱電機株式会社 薄膜パターンの修正方法およびその方法によって修正された露光用マスク
US4874947A (en) * 1988-02-26 1989-10-17 Micrion Corporation Focused ion beam imaging and process control
JP2753306B2 (ja) * 1988-03-18 1998-05-20 株式会社日立製作所 イオンビーム加工方法及び集束イオンビーム装置
JP2569139B2 (ja) * 1988-08-24 1997-01-08 株式会社日立製作所 イオンビーム加工方法
US4929839A (en) * 1988-10-11 1990-05-29 Microbeam Inc. Focused ion beam column
JP2779414B2 (ja) * 1988-12-01 1998-07-23 セイコーインスツルメンツ株式会社 ミクロ断面の加工・観察方法
JP2634289B2 (ja) * 1990-04-18 1997-07-23 三菱電機株式会社 位相シフトマスクの修正方法
JPH0463433A (ja) * 1990-07-02 1992-02-28 Mitsubishi Electric Corp 半導体素子の配線装置およびそれを用いた配線方法
JPH088245B2 (ja) * 1990-09-28 1996-01-29 株式会社島津製作所 集束イオンビームエッチング装置
US5140164A (en) * 1991-01-14 1992-08-18 Schlumberger Technologies, Inc. Ic modification with focused ion beam system
US5159170A (en) * 1991-04-26 1992-10-27 International Business Machines Corporation Grid structure for reducing current density in focussed ion beam
US5266529A (en) * 1991-10-21 1993-11-30 Trw Inc. Focused ion beam for thin film resistor trim on aluminum nitride substrates
JP2529057B2 (ja) * 1992-06-15 1996-08-28 株式会社日立製作所 マイクロイオンビ―ム加工方法
JP3330998B2 (ja) * 1992-08-21 2002-10-07 三菱電機株式会社 位相シフトマスクのパターン欠陥修正方法
US5462629A (en) * 1992-08-28 1995-10-31 Kawasaki Steel Corp. Surface processing apparatus using neutral beam
US5429730A (en) * 1992-11-02 1995-07-04 Kabushiki Kaisha Toshiba Method of repairing defect of structure
JP3153391B2 (ja) * 1993-07-07 2001-04-09 株式会社日立製作所 集束イオンビーム装置
JPH081739A (ja) * 1994-06-24 1996-01-09 Ube Ind Ltd 可塑化装置
US5449916A (en) * 1994-09-09 1995-09-12 Atomic Energy Of Canada Limited Electron radiation dose tailoring by variable beam pulse generation
US5589042A (en) * 1994-11-08 1996-12-31 Hughes Aircraft Company System and method for fabrication of precision optical ramp filters
US5623160A (en) * 1995-09-14 1997-04-22 Liberkowski; Janusz B. Signal-routing or interconnect substrate, structure and apparatus
JPH09283496A (ja) * 1996-04-18 1997-10-31 Hitachi Ltd 荷電粒子ビーム照射によるパターン形成方法及びその装置
US5916424A (en) * 1996-04-19 1999-06-29 Micrion Corporation Thin film magnetic recording heads and systems and methods for manufacturing the same
US5601654A (en) * 1996-05-31 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Flow-through ion beam source
WO1998039770A1 (fr) * 1997-03-04 1998-09-11 Micrion Corporation Fabrication de tete d'enregistrement magnetique a film mince
US5882823A (en) * 1997-05-21 1999-03-16 International Business Machines Corporation Fib repair method
IL124592A (en) 1997-05-23 2002-07-25 Gersan Ets Method of marking a gemstone or diamond
FR2764110B1 (fr) * 1997-05-28 1999-08-20 Univ Paris Curie Dispositif et procede de gravure par ions
US6332962B1 (en) 1997-06-13 2001-12-25 Micrion Corporation Thin-film magnetic recording head manufacture using selective imaging
JP2001516129A (ja) 1997-08-13 2001-09-25 バリアン・セミコンダクター・イクイップメント・アソシエーツ・インコーポレーテッド リニア気体軸受け及びアクティブカウンターバランスオプションを有するスキャニングシステム
US6888146B1 (en) * 1998-04-10 2005-05-03 The Regents Of The University Of California Maskless micro-ion-beam reduction lithography system
CN1064177C (zh) * 1998-05-13 2001-04-04 中国航天工业总公司第二研究院二十三所 变深度刻蚀方法及其装置
US7773340B2 (en) 1999-02-23 2010-08-10 Advanced Research Corporation Patterned magnetic recording head having a gap pattern with substantially elliptical or substantially diamond-shaped termination pattern
US6269533B2 (en) * 1999-02-23 2001-08-07 Advanced Research Corporation Method of making a patterned magnetic recording head
US7196870B2 (en) * 1999-02-23 2007-03-27 Advanced Research Corporation Patterned magnetic recording head with termination pattern having a curved portion
US20030093894A1 (en) * 1999-02-23 2003-05-22 Dugas Matthew P. Double layer patterning and technique for making a magnetic recording head
US6496328B1 (en) 1999-12-30 2002-12-17 Advanced Research Corporation Low inductance, ferrite sub-gap substrate structure for surface film magnetic recording heads
JP2002141495A (ja) * 2000-11-02 2002-05-17 Takashi Katoda 集束イオンビームを用いて作製した極微細構造を有する電子デバイス及び光デバイス
JP2004527972A (ja) * 2001-05-22 2004-09-09 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 所定の層の厚さ特性を有する層の製造方法
GB2386247B (en) 2002-01-11 2005-09-07 Applied Materials Inc Ion beam generator
AU2003245629A1 (en) * 2002-06-19 2004-01-06 Advanced Research Corporation Optical waveguide path for a thermal-assisted magnetic recording head
US7008803B2 (en) * 2002-10-24 2006-03-07 International Business Machines Corporation Method of reworking structures incorporating low-k dielectric materials
JP4312574B2 (ja) * 2003-10-31 2009-08-12 独立行政法人産業技術総合研究所 イオンビーム加工装置およびイオンビーム加工方法
US8144424B2 (en) 2003-12-19 2012-03-27 Dugas Matthew P Timing-based servo verify head and magnetic media made therewith
US7049157B2 (en) * 2004-03-11 2006-05-23 Taiwan Semiconductor Manufacturing Co., Ltd. Calibration standard for critical dimension verification of sub-tenth micron integrated circuit technology
WO2005109405A1 (fr) 2004-05-04 2005-11-17 Advanced Research Corporation Structure integree a film mince comportant des ecartements auxiliaires et des poles auxiliaires pour formation d’un motif arbitraire des ecartements entre les contacts, tetes d’enregistrement magnétique et procede de fabrication de ces elements
JP2006120331A (ja) * 2004-10-19 2006-05-11 Jeol Ltd 集束イオンビーム装置および収差補正集束イオンビーム装置
DE102005017632B4 (de) * 2005-04-15 2010-04-08 Leibniz-Institut für Oberflächenmodifizierung e.V. Verfahren zur Modifikation der Oberfläche einer Probe mittels eines gepulsten Ionenstrahls oder mittels eines ionenstrahlgenerierten Teilchenstrahls mit homogen oder gaußförmig verteilter Stromdichte
JP2007209000A (ja) * 2007-02-21 2007-08-16 Infineon Technologies Ag 所定の層の厚さ特性を有する層の製造方法
JPWO2009020150A1 (ja) * 2007-08-08 2010-11-04 エスアイアイ・ナノテクノロジー株式会社 複合集束イオンビーム装置及びそれを用いた加工観察方法、加工方法
US8068301B2 (en) 2008-03-28 2011-11-29 Advanced Research Corporation Magnetic media formed by a thin film planar arbitrary gap pattern magnetic head
US8767331B2 (en) 2009-07-31 2014-07-01 Advanced Research Corporation Erase drive system and methods of erasure for tape data cartridge
JP2011210492A (ja) * 2010-03-29 2011-10-20 Sii Nanotechnology Inc 集束イオンビーム装置
WO2013028663A1 (fr) * 2011-08-22 2013-02-28 Exogenesis Corporation Procédés et appareils pour employer un faisceau neutre accéléré pour une analyse de surface améliorée
DE102016119791A1 (de) * 2016-10-18 2018-04-19 scia Systems GmbH Verfahren und Vorrichtung zum Bearbeiten einer Oberfläche eines Substrates mittels eines Teilchenstrahls
JP7551542B2 (ja) * 2021-03-05 2024-09-17 キオクシア株式会社 半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3534385A (en) * 1965-12-08 1970-10-13 Centre Nat Rech Scient Process and apparatus for micro-machining and treatment of materials
US3563809A (en) * 1968-08-05 1971-02-16 Hughes Aircraft Co Method of making semiconductor devices with ion beams
FR2289956A1 (fr) * 1974-10-29 1976-05-28 Steigerwald Strahltech Dispositif de regulation du courant de faisceau dans un appareil a faisceau de porteurs de charge industriel
JPS5151095A (en) * 1974-10-30 1976-05-06 Nippon Telegraph & Telephone Ionbiimujidoseigyokakosochi
DE2458370C2 (de) * 1974-12-10 1984-05-10 Dr.-Ing. Rudolf Hell Gmbh, 2300 Kiel Energiestrahl-Gravierverfahren und Einrichtung zu seiner Durchführung
US4063103A (en) * 1975-04-11 1977-12-13 Tokyo Shibaura Electric Co., Ltd. Electron beam exposure apparatus
JPS52101798A (en) * 1976-02-23 1977-08-26 Mitsubishi Electric Corp Charged particle beam machining method and device thereof
US4132898A (en) * 1977-11-01 1979-01-02 Fujitsu Limited Overlapping boundary electron exposure system method and apparatus
DE2947444C2 (de) * 1979-11-24 1983-12-08 Dr.-Ing. Rudolf Hell Gmbh, 2300 Kiel Elektronenstrahl-Gravierverfahren

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0124358A3 (en) * 1983-04-30 1986-03-26 Kabushiki Kaisha Toshiba Method for disconnecting interconnection using focused ion beam
EP0151811A3 (en) * 1983-12-29 1986-12-30 Fujitsu Limited Ion implantation apparatus and method for maskless processing
WO1985004983A1 (fr) * 1984-04-20 1985-11-07 Mta Központi Fizikai Kutató Intézete Procede et agencement pour irradier avec des ions des materiaux a l'etat solide
US5434422A (en) * 1991-09-04 1995-07-18 Hitachi, Ltd. Sample position controller in focused ion beam system
EP0571727A1 (fr) * 1992-04-23 1993-12-01 International Business Machines Corporation Dispositif et méthode de déposition par faisceau d'ions focalisé en contrôlant les paramètres du faisceau
WO2000065306A1 (fr) * 1999-04-21 2000-11-02 Seiko Instruments Inc. Technique de mesure de l'epaisseur d'un film
US20250308840A1 (en) * 2024-03-29 2025-10-02 Fei Company Sample preparation with non-uniform dose

Also Published As

Publication number Publication date
JPH0328017B2 (fr) 1991-04-17
JPS58106750A (ja) 1983-06-25
US4457803A (en) 1984-07-03
EP0082639A3 (en) 1984-05-16
DE3278895D1 (en) 1988-09-15
EP0082639B1 (fr) 1988-08-10

Similar Documents

Publication Publication Date Title
US4457803A (en) Processing method using a focused ion beam
US5661043A (en) Forming a buried insulator layer using plasma source ion implantation
EP1303866B1 (fr) Systeme et procede d'amelioration des couches minces au moyen d'un traitement par faisceau d'ions d'amas gazeux
US8466415B2 (en) Methods for performing circuit edit operations with low landing energy electron beams
US8716682B2 (en) Apparatus and method for multiple slot ion implantation
US7026628B2 (en) Advanced ion beam detector for ion implantation tools
US4481042A (en) Ion implantation method
EP0478215B1 (fr) Masque réfléchissant et appareil d'exposition par faisceau de particules chargées utilisant un tel masque réfléchissant
JP2006510196A (ja) 高エネルギー・クラスタ照射による半導体表面皮膜の再結晶化及び半導体のドーピング方法
US6355574B1 (en) Method and device for treating a semiconductor surface
JP3155570B2 (ja) 収束イオンビーム質量分析方法及び収束イオンビーム質量分析複合装置
US3790411A (en) Method for doping semiconductor bodies by neutral particle implantation
Takai Nuclear microprobe application in semiconductor process developments
JPH09186138A (ja) イオンビーム加工装置
US20250308840A1 (en) Sample preparation with non-uniform dose
El-Kareh Ion implantation
US4843238A (en) Method for identifying a blistered film in layered films
JP3847639B2 (ja) 電子線装置及び該装置を用いたデバイス製造方法
JPH0668832A (ja) 走査電子顕微鏡
JPH01140159A (ja) イオンビーム加工装置
EP0190251A1 (fr) Procede et appareil de micro-analyses ou de visionnement d'echantillons.
JPS6383644A (ja) イオン質量分析装置
JPS63151026A (ja) コンタクト・ホ−ル形成法
JPH0620059B2 (ja) イオンビ−ム加工方法
JPH08148112A (ja) イオン注入装置

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 19821217

AK Designated contracting states

Designated state(s): DE FR GB IT

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Designated state(s): DE FR GB IT

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: KABUSHIKI KAISHA TOSHIBA

17Q First examination report despatched

Effective date: 19860228

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB IT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 19880810

REF Corresponds to:

Ref document number: 3278895

Country of ref document: DE

Date of ref document: 19880915

ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
ITTA It: last paid annual fee
REG Reference to a national code

Ref country code: GB

Ref legal event code: 746

Effective date: 19981105

REG Reference to a national code

Ref country code: FR

Ref legal event code: D6

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20011212

Year of fee payment: 20

Ref country code: FR

Payment date: 20011212

Year of fee payment: 20

REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20020109

Year of fee payment: 20

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION

Effective date: 20021208

REG Reference to a national code

Ref country code: GB

Ref legal event code: PE20

Effective date: 20021208